Analog Devices Inc. 110381-HMC452QS16G

Overview

HMC452QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W RF power amplifier optimized for 0.4–2.2 GHz cellular, WLL, and ISM applications. It delivers 22.5 dB gain at 400 MHz, +48 dBm output IP3 at 2.1 GHz, 53% PAE at +31 dBm Pout, and operates from a single +5 V supply with integrated VPD power control.

For engineers reviewing the HMC452QS16G datasheet, HMC452QS16G pinout, HMC452QS16G application, or HMC452QS16G equivalent, this page provides verified specifications, QSOP16G package details, temperature-stable RF performance across 400–2100 MHz bands, and validated alternatives for CDMA2000, W-CDMA, and fixed wireless front-end designs.

Technical Context

The HMC452QS16G employs a monolithic GaAs InGaP HBT process to achieve high linearity and efficiency across wide bandwidths. Its two-stage amplifier architecture supports broadband operation from 400 MHz to 2170 MHz with minimal external components-only DC blocking capacitors, bias inductors, and matching networks required.

Power control is implemented via the VPD pin, enabling full RF shutdown or fine-grained output power/current adjustment without altering bias resistors or supply rails. Input and output are DC-coupled, requiring off-chip matching for optimal S11/S22 return loss (≥11 dB input, ≥20 dB output at 400 MHz).

Key Specifications

Pinout & Package

Package: QSOP16G - 16-lead plastic surface-mount package (29.4 mm² footprint), RoHS-compliant variant available as HMC452QS16GE. Exposed paddle must be soldered to PCB RF ground per MSL1 reflow profile (235 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with QPA2211 and SKY65167-396LF, the HMC452QS16G uniquely balances 0.4–2.2 GHz coverage, +5 V simplicity, and +48 dBm linearity-making it the only option supporting both rural 400 MHz GSM and urban 2.1 GHz W-CDMA in a single-footprint solution.

Availability

HMC452QS16G is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and ISM band industrial links requiring stable component supply, consistent RF performance across temperature, and long-lifecycle availability.

Supply support for HMC452QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-performance RF product lines, including GaAs MMIC amplifiers, mixers, and switches for defense, communications, and instrumentation.

The HMC452QS16G belongs to Hittite's legacy Linear & Power Amplifier family, designed specifically for broadband, high-efficiency RF power stages in multi-standard wireless infrastructure equipment.

FAQ

What is the absolute maximum RF input power rating for the HMC452QS16G?

The HMC452QS16G has an absolute maximum RF input power rating of +31 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor junctions, especially under mismatched load conditions. Derating is recommended for continuous-wave operation above +27 dBm.

Does the HMC452QS16G require external matching components at 400 MHz?

Yes, the HMC452QS16G requires external matching components at 400 MHz. The datasheet provides a complete 400 MHz application circuit with specific values: C1/C2 = 12 pF, L1 = 47 nH, L2 = 40 nH, and R1 = 5.1 Ω. These components establish 50 Ω broadband input/output match and DC bias isolation, as the device itself is DC-coupled on both ports.

How does VPD control affect quiescent current and RF output in the HMC452QS16G?

VPD directly controls the HMC452QS16G's quiescent collector current (Icq), which scales linearly from ~10 mA at 0 V to 485 mA at +5 V. This enables precise analog control of RF output power and PAE-e.g., reducing VPD to 3.3 V lowers Icq to ~320 mA, decreasing P1dB by ~2 dB while improving efficiency at back-off power levels.

Is the HMC452QS16G pin-compatible with the RoHS-compliant HMC452QS16GE variant?

Yes, the HMC452QS16G and HMC452QS16GE share identical pinout, mechanical dimensions, and electrical specifications. The only differences are lead finish (Sn/Pb vs. 100% matte Sn) and MSL reflow profile (235 °C vs. 260 °C peak). No PCB layout changes are required when substituting between these variants.

What thermal management is required for continuous operation of the HMC452QS16G at +85 °C ambient?

For continuous operation at +85 °C ambient, the HMC452QS16G requires direct soldering of its exposed ground paddle to a multilayer PCB ground plane with ≥6 thermal vias (0.3 mm diameter, filled), plus attachment to an external heatsink. Its thermal resistance is 24.1 °C/W junction-to-paddle; without supplemental cooling, junction temperature would exceed 150 °C at full 2.7 W dissipation.