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Analog Devices Inc. 110384-HMC452ST89

Part No.:
110384-HMC452ST89
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix110384-HMC452ST89.pdf
Description:
BOARD EVAL HMC452ST89E 900MHZ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,429

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Product details

Overview

HMC452ST89 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W MMIC power amplifier operating from 0.4 to 2.2 GHz, delivering +31 dBm P1dB and +49 dBm OIP3 at 2.1 GHz with 50% PAE, optimized for cellular/PCS/3G base station and fixed wireless transmit stages.

For engineers reviewing the HMC452ST89 datasheet, HMC452ST89 pinout, HMC452ST89 application, or HMC452ST89 equivalent, key selection criteria include broadband gain flatness (7–21 dB across band), single +5 V supply operation, SOT-89 package thermal performance, and verified W-CDMA/CDMA2000 linear power capability.

Technical Context

The HMC452ST89 integrates a two-stage InGaP HBT amplifier with DC-coupled input and RF output bias feed, requiring external matching networks per frequency band. It operates with fixed +5 V collector bias and draws 510 mA quiescent current, enabling high linearity without complex bias sequencing.

Its architecture supports wideband operation via impedance-tuned microstrip traces (e.g., TL1–TL5 in 400 MHz circuit), with thermal design anchored to the exposed paddle and four ground pins-enabling stable 2.7 W dissipation at +85 °C with 24.1 °C/W junction-to-ground thermal resistance.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency Range0.4–2.2 GHz: Full-band operation validated across five discrete bands (400–410, 450–496, 810–960, 1710–1990, 2010–2170 MHz).
P1dB Output Power+31.5 dBm max @ 2.1 GHz: Enables 28–31 dBm linear output across bands, supporting CDMA2000 +25 dBm channel power at –45 dBc ACP.
OIP3+49 dBm @ 2.1 GHz: Delivers high third-order intercept for multi-carrier W-CDMA and LTE uplink linearity.
Power Added Efficiency50% @ +31 dBm Pout: Reduces thermal load and DC power consumption in compact RF front-ends.
Gain21 dB @ 400 MHz / 9 dB @ 2100 MHz: Band-dependent small-signal gain enables flexible system-level gain distribution.
Noise Figure6.5 dB typical @ 400 MHz: Supports cascaded noise budgeting in receive-path shared modules or TDD transceivers.
Supply Current510 mA @ +5 V: Fixed bias simplifies power management; no gate voltage tuning required.

Pinout & Package

SOT-89 package with exposed thermal paddle and four terminals: Pin 1 (RFIN), Pin 2 (GND), Pin 3 (RFOUT/Vcc), Pin 4 (GND). Requires soldering all ground pins and paddle to PCB RF ground plane for thermal and RF stability.

Pin/TerminalCircuit RoleDesign Meaning
1RFINDC-coupled RF input; requires off-chip matching network (e.g., C1/L1 in 400 MHz circuit) for 50 Ω interface.
2, 4GNDRF and DC ground return paths; must be low-inductance connections to PCB ground plane and thermal paddle.
3RFOUT / VccRF output and DC bias feed point; requires off-chip RF choke (L3/L4) and bypass (C5/C6) for stable bias and harmonic suppression.

Key Features

FeatureDesign Value
InGaP HBT ProcessEnables high fT/fmax, robust ESD tolerance (Class 1A), and stable performance over –40 to +85 °C.
Single +5 V OperationEliminates dual-rail supplies; simplifies board layout and reduces BOM count in cost-sensitive infrastructure designs.
Thermal Design24.1 °C/W junction-to-ground thermal resistance supports 2.7 W continuous dissipation at +85 °C ambient.
Band-Specific MatchingValidated application circuits provided for 400, 470, 900, 1900, and 2100 MHz bands-enabling rapid integration without EM simulation.
W-CDMA/CDMA Linearity+25 dBm channel power at –45 dBc ACPR (64 DPCH, 2.14 GHz) confirms suitability for 3GPP-compliant base station PA stages.

Applications

GSM/EDGE Base StationCDMA2000 Macrocell

Use Scenario: Final-stage power amplification in 900/1800 MHz GSM BTS remote radio heads with 27–30 dBm output.

IC Role / Device Role / Timing Role: Linear driver amplifier delivering +30 dBm P1dB and +47 dBm OIP3 at 900 MHz for multi-carrier EDGE modulation.

Use Value: 13.5–15.5 dB gain and 6.5 dB NF enable cascade with low-noise drivers while meeting EN 301 908 spectral mask requirements.

Use Scenario: Transmit chain amplification in CDMA IS-95/2000 macrocell sites operating at 1900/2100 MHz.

IC Role / Device Role / Timing Role: High-efficiency final PA stage providing +31 dBm P1dB and 50% PAE at 2.1 GHz for forward-link 9-channel operation.

Use Value: +49 dBm OIP3 and –45 dBc ACPR compliance ensure adjacent channel leakage ratio meets TIA/EIA-98 standards.

Fixed Wireless Access (FWA)Cable Modem DOCSIS 4.0 Upstream

Use Scenario: Outdoor unit (ODU) PA in point-to-multipoint 2.5 GHz FWA systems requiring high dynamic range and thermal resilience.

IC Role / Device Role / Timing Role: Broadband 0.4–2.2 GHz power amplifier delivering +31.5 dBm Psat and 21 dB gain at 400 MHz for licensed/unlicensed backhaul links.

Use Value: 510 mA ICQ at +5 V and MSL1 rating support ruggedized outdoor deployment with minimal heatsinking.

Use Scenario: Upstream transmit path in DOCSIS 4.0 cable modems operating in 5–204 MHz band with high-order QAM.

IC Role / Device Role / Timing Role: Low-distortion driver amplifier providing +30.5 dBm Psat and +45 dBm OIP3 at 400 MHz for upstream channel aggregation.

Use Value: 22 dB input return loss and 11 dB output return loss simplify filter integration and reduce group delay ripple in wideband upstream filters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Qorvo QPA22110.7–2.7 GHz GaN HEMT PA; +34 dBm P1dB, +52 dBm OIP3, 28 V supply, higher efficiency but larger 5×5 mm QFN.Targets higher-power macrocell base stations; not drop-in due to voltage, footprint, and bias complexity.Select for >33 dBm output or >2.2 GHz extension; avoid for +5 V SOT-89 constrained designs.
Analog Devices HMC451LP3E0.4–2.5 GHz GaAs pHEMT; +28 dBm P1dB, +45 dBm OIP3, +5 V, 16-pin 3×3 mm LFCSP, integrated bias control.Designed for digitally controlled bias and envelope tracking; requires additional control logic vs. HMC452ST89's fixed bias.Select when adaptive bias or digital interface is needed; HMC452ST89 preferred for analog-only, cost-sensitive deployments.

Compared with QPA2211 and HMC451LP3E, the HMC452ST89 offers the lowest BOM count and smallest footprint for +5 V, 1 W-class linear amplification-making it optimal for space-constrained FWA and small-cell remote units where thermal management is prioritized over peak power.

Availability

HMC452ST89 is available at Aetrix Electronics and suitable for GSM/EDGE base stations, CDMA2000 macrocells, and fixed wireless access equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HMC452ST89 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its RF/Microwave product portfolio, including high-performance MMICs for communications infrastructure.

The HMC452ST89 belongs to Hittite's legacy InGaP HBT power amplifier family, designed specifically for cost-effective, thermally robust linear amplification in cellular and fixed wireless transmit chains.

FAQ

What is the recommended DC blocking and bypass capacitor configuration for HMC452ST89?

For HMC452ST89, use 12 pF (C1) and 15 pF (C2) 0402 capacitors at RFIN, 6.8 pF (C3/C4) and 39 pF (C5) at RFOUT, plus 100 pF (C6) and 2.2 μF tantalum (C7) for Vcc bypass. These values are validated in the 400 MHz application circuit and maintain impedance integrity across 0.4–2.2 GHz.

Does HMC452ST89 require external bias sequencing or temperature compensation?

No-HMC452ST89 operates with a single fixed +5 V supply and draws 510 mA quiescent current. Its InGaP HBT process provides inherent thermal stability, with gain variation of only 0.012–0.02 dB/°C across all bands; no external bias control or compensation circuitry is needed.

Can HMC452ST89 be used in TDD systems alongside receiver LNA stages?

Yes-HMC452ST89's 6.5 dB noise figure at 400 MHz and high reverse isolation (>10 dB across band) allow co-location with LNAs in TDD architectures. Its 22 dB input return loss minimizes LO leakage impact, and the SOT-89 package supports tight RF shielding integration.

What is the maximum RF input power rating for HMC452ST89 before damage occurs?

HMC452ST89 has an absolute maximum RF input power rating of +31 dBm at +5 V supply. Exceeding this level risks permanent degradation of the InGaP HBT transistor; system design must include input limiting or circulator protection in high-PIN environments.

Is HMC452ST89 RoHS-compliant and compatible with lead-free reflow?

The HMC452ST89 variant is Sn/Pb solder-finished and rated MSL1 with 235 °C peak reflow; the RoHS-compliant HMC452ST89E uses 100% matte tin and supports 260 °C peak reflow. Both require strict ESD handling (Class 1A) and grounding of all GND pins and paddle during assembly.

110384-HMC452ST89 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Amplifier
Frequency:
900MHz
Contents:
Board(s)
Utilized IC / Part:
HMC452ST89

110384-HMC452ST89 FAQ

1.How can I place an order for 110384-HMC452ST89 through Aetrix?

Please submit a Request for Quotation (RFQ) for 110384-HMC452ST89 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 110384-HMC452ST89 reliable?

The price and inventory of 110384-HMC452ST89 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 110384-HMC452ST89 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 110384-HMC452ST89 transactions.

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110384-HMC452ST89 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 110384-HMC452ST89 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 110384-HMC452ST89?

For technical support, including 110384-HMC452ST89 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 110384-HMC452ST89 requirements.

6.How does Aetrix verify that 110384-HMC452ST89 is sourced from the original manufacturer or authorized distributors?

All 110384-HMC452ST89 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 110384-HMC452ST89 meets industry standards.

7.What is the process for return or replacement of 110384-HMC452ST89?

All 110384-HMC452ST89 units undergo pre-shipment inspection (PSI). If there is an issue with 110384-HMC452ST89, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 110384-HMC452ST89 part is unused and in its original packaging.

Return procedure for 110384-HMC452ST89:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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