Analog Devices Inc. 110957-HMC453ST89
- Part No.:
- 110957-HMC453ST89
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
110957-HMC453ST89.pdf
- Description:
- BOARD EVAL HMC453ST89E 400MHZ
- Quantity:
- Payment:

- Shipping:

Inventory:1,570
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Product details
Overview
HMC453ST89 from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT monolithic microwave integrated circuit (MMIC) power amplifier optimized for 0.4–2.2 GHz broadband operation in cellular, PCS, 3G, and fixed wireless infrastructure. It delivers 32.5 dBm saturated output power, +49 dBm output IP3 at 2.1 GHz, 7.5 dB gain at 2100 MHz, 41% power-added efficiency, and operates from a single +5 V supply.
For engineers reviewing the HMC453ST89 datasheet, HMC453ST89 pinout, HMC453ST89 application, or HMC453ST89 equivalent, this page provides verified RF performance data, SOT-89 package interface details, temperature-stable gain and linearity specs across five frequency bands, and validated alternatives for W-CDMA, CDMA2000, and GSM/EDGE base station front-end designs.
Technical Context
The HMC453ST89 employs a single-stage InGaP HBT MMIC architecture with DC-coupled input and RF-output/bias-combined output terminal. Its design enables high linearity without external bias sequencing, supporting direct +5 V operation with minimal external components-only four capacitors, four inductors, and one resistor required per application circuit.
Performance is characterized across five discrete bands (400–410, 450–496, 810–960, 1710–1990, and 2010–2170 MHz), with gain, P1dB, Psat, and OIP3 specified at TA = +25°C and Vs = +5 V. Thermal resistance is 17.1 °C/W (junction-to-ground paddle), enabling stable operation from –40°C to +85°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz continuous coverage; validated in five discrete bands including 400–410 MHz and 2010–2170 MHz. |
| Saturated Output Power (Psat) | 32.5 dBm at 2100 MHz; supports +26 dBm CDMA2000 channel power with –45 dBc ACLR. |
| Output IP3 (OIP3) | +49 dBm at 2100 MHz; enables high dynamic range in multi-carrier W-CDMA and LTE FDD uplink paths. |
| Small-Signal Gain | 20.5 dB @ 400 MHz / 7.5 dB @ 2100 MHz; flatness maintained via on-board matching networks. |
| Power-Added Efficiency | 41% @ +32.5 dBm Pout, +5 V supply; reduces thermal load and simplifies heatsinking in compact RF modules. |
| Supply Current (Icq) | 725 mA at +5 V; enables predictable DC power budgeting for 12 V or 5 V system-level power distribution. |
| Noise Figure | 6.5 dB @ 2100 MHz; suitable as driver stage before low-noise receive path or in transmit chain where NF is secondary to linearity. |
Pinout & Package
The HMC453ST89 is housed in an industry-standard SOT-89 plastic surface-mount package with exposed ground paddle. All ground pins (2 and 4) and the paddle must be soldered directly to PCB RF/DC ground using multiple thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFIN | DC-coupled RF input; requires off-chip impedance matching (e.g., 4.3 nH + 8.2 pF network at 400 MHz). |
| 2, 4 | GND | RF and DC ground terminals; must be low-inductance connections to solid ground plane and thermal pad. |
| 3 | RFOUT | RF output and DC bias injection point; combines RF signal path and +5 V supply via external choke (e.g., 47 nH). |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT MMIC process | Enables high reliability, >150°C junction temperature rating, and robust ESD tolerance (Class 1C). |
| Single +5 V operation | Eliminates need for negative or dual-rail supplies; simplifies power architecture in remote radio units. |
| High OIP3 / P1dB ratio | +49 dBm OIP3 vs. +32.5 dBm P1dB yields >16 dB linear operating margin for wideband modulation. |
| Thermally enhanced SOT-89 | 17.1 °C/W junction-to-paddle thermal resistance supports 3.8 W max dissipation at +85°C ambient. |
| Multi-band validation | Full electrical specs provided for five distinct bands - no interpolation required for 400 MHz, 900 MHz, or 2.1 GHz systems. |
Applications
| GSM/EDGE Base Station Driver | W-CDMA Node B Transmit Chain |
|---|---|
Use Scenario: Final-stage driver in macrocell BTS transceiver module operating at 900 MHz with 200 kHz channel spacing. IC Role / Device Role / Timing Role: Linear power amplifier delivering +32 dBm output with <–45 dBc adjacent channel leakage. Use Value: +47 dBm OIP3 at 900 MHz ensures compliance with ETSI EN 301 908-1 spectral mask under 64-DPCH W-CDMA loading. |
Use Scenario: Transmit power amplifier in indoor femtocell unit covering 2110–2170 MHz UMTS Band I. IC Role / Device Role / Timing Role: High-efficiency final PA stage with 41% PAE at +32.5 dBm output. Use Value: 7.5 dB gain and +49 dBm OIP3 enable single-stage amplification without cascaded stages, reducing board area and insertion loss. |
| CDMA2000 Mobile Infrastructure | Fixed Wireless Access (FWA) CPE |
Use Scenario: Forward-link PA in 1.9 GHz CDMA2000 base station supporting 9-channel IS-95 traffic. IC Role / Device Role / Timing Role: High-dynamic-range amplifier delivering +26 dBm channel power with –45 dBc ACPR. Use Value: Validated –45 dBc ACPR at 1.96 GHz with 5 V supply enables direct replacement of legacy hybrid PAs in existing FWA radios. |
Use Scenario: Outdoor customer premise equipment operating in 450–470 MHz licensed band for rural broadband backhaul. IC Role / Device Role / Timing Role: Compact, thermally efficient PA enabling fanless enclosure design. Use Value: 20.5 dB gain at 470 MHz and 41% PAE reduce DC power draw and thermal management complexity in sealed outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | 0.7–2.7 GHz range; 33 dBm Psat; +48 dBm OIP3 at 2.1 GHz; requires +8 V supply. | Higher voltage operation increases system-level power conversion complexity but improves gain flatness above 2.2 GHz. | Select QPA2211 when extending coverage beyond 2.2 GHz or requiring higher Psat margin in 2.6 GHz LTE TDD systems. |
| Analog Devices HMC452ST89 | Same SOT-89 package; lower 0.5 W output (27 dBm Psat); +42 dBm OIP3 at 2.1 GHz; 35% PAE. | Reduced linearity and output power suit lower-tier repeaters or low-power small cells where thermal envelope is constrained. | Choose HMC452ST89 for cost-sensitive, lower-power nodes where +42 dBm OIP3 meets ACLR requirements and board space is identical. |
Compared with QPA2211 and HMC452ST89, the HMC453ST89 uniquely balances 32.5 dBm output, +49 dBm OIP3, and single +5 V operation in SOT-89 - making it optimal for thermally constrained, multi-band 3G/4G infrastructure where supply simplicity and linearity are co-prioritized.
Availability
HMC453ST89 is available at Aetrix Electronics and suitable for GSM/EDGE base station drivers, W-CDMA Node B transmit chains, and CDMA2000 mobile infrastructure requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for HMC453ST89 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for defense, communications, and test instrumentation.
The HMC453ST89 belongs to Hittite's legacy InGaP HBT power amplifier family, engineered specifically for high-linearity, broadband cellular infrastructure applications from 400 MHz to 2.2 GHz.
FAQ
What is the absolute maximum RF input power rating for the HMC453ST89?
The HMC453ST89 has an absolute maximum RF input power rating of +32 dBm at +5 Vdc supply, as defined in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor. For reliable operation, input drive should remain ≤ +10 dBm in linear regions and ≤ +20 dBm during compression testing, per application circuit validation.
Does the HMC453ST89 require external bias sequencing or startup circuitry?
No, the HMC453ST89 operates from a single +5 V supply with no external bias sequencing required. Its internal InGaP HBT structure allows immediate turn-on with stable quiescent current (725 mA) and gain. The RFOUT pin serves as both RF output and DC bias injection point, eliminating separate Vbias lines.
Can the HMC453ST89 be used in 5G sub-6 GHz bands such as n77 or n78?
The HMC453ST89 is specified up to 2.2 GHz and not characterized for 3.3–3.8 GHz n77/n78 bands. While gain remains measurable up to ~2.6 GHz, OIP3 degrades significantly beyond 2.2 GHz, and no application circuits or thermal data exist for those frequencies. Use only within its validated 0.4–2.2 GHz range.
What is the recommended PCB grounding strategy for the HMC453ST89 SOT-89 package?
All ground pins (2 and 4) and the exposed thermal paddle must be soldered to a solid, low-impedance RF ground plane using ≥ six 0.3 mm vias evenly distributed under the paddle. The evaluation PCB (110957-400) uses Rogers 4350B with 10 mil thickness and 50 Ω microstrip routing - critical for maintaining return loss >13 dB across all bands.
Is the HMC453ST89 RoHS-compliant?
The HMC453ST89 uses Sn/Pb lead finish and is not RoHS-compliant. For RoHS applications, use the pin-compatible HMC453ST89E variant, which features 100% matte tin plating and MSL1 rating with 260 °C peak reflow tolerance.
110957-HMC453ST89 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 400MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC453ST89
110957-HMC453ST89 FAQ
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7.What is the process for return or replacement of 110957-HMC453ST89?
All 110957-HMC453ST89 units undergo pre-shipment inspection (PSI). If there is an issue with 110957-HMC453ST89, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 110957-HMC453ST89 part is unused and in its original packaging.
Return procedure for 110957-HMC453ST89:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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