Analog Devices Inc. 110976-HMC453QS16G
- Part No.:
- 110976-HMC453QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
110976-HMC453QS16G.pdf
- Description:
- EVAL BOARD HMC453QS16GE
- Quantity:
- Payment:

- Shipping:

Inventory:4,407
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Product details
Overview
HMC453QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1.6 W RF power amplifier optimized for 0.4–2.2 GHz operation, delivering 21.5 dB gain at 400 MHz, +51 dBm output IP3 at 2.1 GHz, and 45% PAE at +32 dBm Pout under +5 V supply. It serves as a high-linearity driver in cellular base station front-ends and fixed wireless transmitters.
For engineers reviewing the HMC453QS16G datasheet, HMC453QS16G pinout, HMC453QS16G application, or HMC453QS16G equivalent, key selection criteria include its QSOP16G package footprint, integrated VPD power control, broadband 0.4–2.2 GHz coverage, and verified performance in CDMA2000 and W-CDMA 64 DPCH modulation schemes.
Technical Context
The HMC453QS16G employs a monolithic GaAs InGaP HBT process with two-stage amplification architecture. Its input stage is DC-coupled via Pin 6 (RFIN), while RF output and DC bias are delivered through Pins 11–12 (RFOUT), requiring external matching networks per frequency band.
Power control is implemented via Pin 3 (VPD), enabling full shutdown or fine-grained RF output current adjustment. Thermal management relies on soldering all ground pins (1,2,4,5,7–10,13–16) and the exposed paddle to PCB RF ground, with junction-to-ground-paddle thermal resistance of 17.1 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Full specified operation across five licensed bands (400, 470, 900, 1900, 2100 MHz). |
| Small-Signal Gain | 21.5 dB @ 400 MHz / 8 dB @ 2100 MHz: Enables flexible gain staging in multi-band repeaters. |
| OIP3 | +51 dBm @ 2100 MHz: Supports W-CDMA 64 DPCH with ACPR ≤ –45 dBc at +25 dBm channel power. |
| P1dB | +32 dBm @ 400 MHz: Delivers 1.6 W saturated output with <1 dB compression across operating bands. |
| PAE | 45% @ +32 dBm Pout: Reduces thermal load and DC power draw in continuous-wave and modulated operation. |
| Supply | +5 V single supply: Simplifies bias design; supports 4.5–5.5 V operation with monotonic gain/IP3 vs. voltage response. |
| Control Interface | VPD pin (Pin 3): 0–5.4 V analog control enables dynamic output power scaling without external DACs. |
Pinout & Package
Package: QSOP16G - 16-lead plastic surface-mount package with exposed ground paddle; body size 29.4 mm²; MSL1 rating; Sn/Pb lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,4,5,7–10,13–16 | GND | RF/DC ground terminals; must be soldered to PCB ground plane with multiple vias for low-inductance return path. |
| 3 | VPD | Power-down/control voltage input; sets quiescent current and RF output level; 0 V = shutdown, 5 V = full power. |
| 6 | RFIN | DC-coupled RF input; requires off-chip matching network (e.g., 12 pF + 47 nH at 400 MHz). |
| 11,12 | RFOUT | RF output and DC bias feed for output stage; dual-purpose node requiring series RF choke and shunt bypass. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband 0.4–2.2 GHz operation | Covers GSM, CDMA, W-CDMA, ISM, and Fixed Wireless bands without re-tuning or component swaps. |
| +51 dBm OIP3 at 2.1 GHz | Enables linear transmission of wideband signals (e.g., 3.84 MHz W-CDMA) with minimal distortion and adjacent channel leakage. |
| Integrated VPD control | Eliminates need for external gate/base bias circuitry; supports fast power ramping and TDD burst-mode operation. |
| 45% PAE at +32 dBm | Reduces heat sink requirements and improves system efficiency in thermally constrained outdoor units. |
| QSOP16G SMT package | Standardized footprint compatible with automated assembly; exposed paddle ensures repeatable thermal performance. |
Applications
| GSM/EDGE Base Station Driver | CDMA2000 Macrocell Transmitter |
|---|---|
Use Scenario: Final-stage driver in 900 MHz BTS power amplifier chain before diplexer and antenna. IC Role / Device Role / Timing Role: Linear RF power amplifier providing 21.5 dB gain and +47 dBm IP3 at 900 MHz. Use Value: Maintains ACLR >65 dB under 8-PSK EDGE modulation while sustaining +32 dBm P1dB with 45% PAE. | Use Scenario: Transmit path amplifier in CDMA2000 1xRTT macrocell radio unit operating at 1960 MHz. IC Role / Device Role / Timing Role: High-dynamic-range driver delivering +25 dBm channel power at –45 dBc ACP. Use Value: Meets IS-2000 spectral mask with <0.5 dB gain variation over –40°C to +85°C ambient range. |
| W-CDMA Femtocell Power Amplifier | Fixed Wireless Access Point |
Use Scenario: Compact indoor femtocell supporting 64 DPCH W-CDMA at 2140 MHz. IC Role / Device Role / Timing Role: Single-chip 2.1 GHz PA delivering +25 dBm with –45 dBc ACPR using VPD-based power control. Use Value: Achieves required EVM <3.5% and ACLR >60 dB without digital predistortion (DPD) circuitry. | Use Scenario: Outdoor point-to-point link transmitter in 470–496 MHz TVWS band. IC Role / Device Role / Timing Role: High-efficiency final amplifier enabling +32 dBm output with 45% PAE at 470 MHz. Use Value: Extends link budget by 3 dB over competing Si LDMOS PAs while reducing DC power consumption by 30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | 0.7–2.8 GHz range; GaN-on-SiC; +50 dBm OIP3 @ 2.1 GHz; requires dual +28 V supply. | Higher power density and thermal robustness but incompatible with +5 V systems and QSOP footprint. | Select for higher-power macrocell applications where efficiency >55% and ruggedness outweigh footprint constraints. |
| Skyworks SKY66297-360 | 0.6–2.7 GHz; CMOS-based; +45 dBm OIP3 @ 2.1 GHz; integrated digital control interface (SPI). | Lower OIP3 and PAE (38%), but offers programmable gain and built-in temperature compensation. | Select when system-level calibration and adaptive biasing are prioritized over raw linearity and efficiency. |
Compared with QPA2211 and SKY66297-360, the HMC453QS16G delivers superior OIP3 (+51 dBm) and PAE (45%) within a compact +5 V–compatible QSOP16G package, making it optimal for cost-sensitive, thermally constrained 0.4–2.2 GHz infrastructure designs where analog VPD control suffices.
Availability
HMC453QS16G is available at Aetrix Electronics and suitable for GSM/EDGE base station drivers, CDMA2000 macrocell transmitters, and W-CDMA femtocell power amplifiers requiring stable component supply across industrial temperature ranges.
Supply support for HMC453QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its RF/Microwave product portfolio, specializing in high-performance analog, RF, and mixed-signal ICs for communications, defense, and instrumentation.
The HMC453QS16G belongs to Hittite's legacy linear & power amplifier family, designed specifically for broadband infrastructure applications demanding high linearity, efficiency, and thermal stability in compact SMT packages.
FAQ
What is the absolute maximum RF input power rating for the HMC453QS16G?
The HMC453QS16G has an absolute maximum RF input power rating of +32 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor structure. For reliable operation, input power should remain ≤+10 dBm in typical small-signal gain applications, with proper external filtering and limiting if higher input levels are anticipated.
Does the HMC453QS16G require external matching components, and if so, why?
Yes, the HMC453QS16G requires external matching components on both RFIN (Pin 6) and RFOUT (Pins 11–12) because its internal transistor impedances are not 50 Ω. The datasheet provides band-specific values-e.g., 12 pF + 47 nH at 400 MHz-to transform impedance for optimal gain, return loss, and power transfer. Without these, S11 and S22 degrade beyond 10 dB, causing instability and reduced output power.
How does the VPD pin function in the HMC453QS16G, and what voltage range is supported?
The VPD pin (Pin 3) controls the HMC453QS16G's quiescent current and RF output power level. At +5 V, the device operates at full power (Icq = 725 mA); reducing VPD lowers Icq and output power linearly. The supported range is 0–5.4 Vdc, with 0 V placing the amplifier in full shutdown mode. This analog control eliminates need for external bias sequencing or digital interfaces in TDD or burst-mode systems.
What thermal management practices are required for reliable operation of the HMC453QS16G?
Reliable thermal management of the HMC453QS16G requires soldering all ground pins (1,2,4,5,7–10,13–16) and the exposed ground paddle directly to a multilayer PCB's RF ground plane using ≥8 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). With junction-to-paddle thermal resistance of 17.1 °C/W, maintaining case temperature ≤+85°C ensures junction temperature stays below the 150°C absolute maximum, especially at full 3.8 W dissipation.
Is the HMC453QS16G pin-compatible with the HMC453QS16GE variant?
Yes, the HMC453QS16G and HMC453QS16GE share identical pinout, electrical specifications, and mechanical outline. The only difference is RoHS compliance: HMC453QS16GE uses 100% matte tin lead finish and has a higher peak reflow temperature (260°C vs. 235°C), while HMC453QS16G uses Sn/Pb solder. Both are drop-in replacements in existing designs, provided reflow profile matches the respective MSL1 rating.
110976-HMC453QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 450MHz ~ 496MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC453QS16GE
110976-HMC453QS16G FAQ
1.How can I place an order for 110976-HMC453QS16G through Aetrix?
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6.How does Aetrix verify that 110976-HMC453QS16G is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of 110976-HMC453QS16G?
All 110976-HMC453QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 110976-HMC453QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 110976-HMC453QS16G part is unused and in its original packaging.
Return procedure for 110976-HMC453QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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