Analog Devices Inc. 111041-HMC452QS16G
- Part No.:
- 111041-HMC452QS16G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
111041-HMC452QS16G.pdf
- Description:
- BOARD EVAL HMC452QS16GE 2100MHZ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC452QS16G from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT 1 W MMIC power amplifier operating from 0.4 to 2.2 GHz, delivering 31 dBm saturated output power and +48 dBm OIP3 at 2.1 GHz with 53% PAE at +31 dBm Pout, optimized for cellular infrastructure and fixed wireless transmitters.
For engineers reviewing the HMC452QS16G datasheet, HMC452QS16G pinout, HMC452QS16G application, or HMC452QS16G equivalent, key selection criteria include its 22.5 dB gain at 400 MHz, integrated VPD power control, QSOP16G SMT package, and single +5 V supply operation in multi-band RF front-end designs.
Technical Context
The HMC452QS16G employs a monolithic GaAs InGaP HBT process enabling high linearity and efficiency across 0.4–2.2 GHz. Its two-stage architecture integrates input/output matching networks requiring only external DC blocking and bias components, with VPD pin enabling precise control of quiescent current and RF output power.
It operates with fixed +5 V collector bias and supports temperature-stable performance: gain variation ≤0.02 dB/°C, and maintains ≥7 dB noise figure up to 2.17 GHz. The device is designed for broadband linear amplification in FDD/TDD base station and repeater applications where high OIP3 and low ACPR are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.2 GHz: Covers GSM, CDMA, W-CDMA, PCS, and 2.1 GHz LTE bands in a single device. |
| Small-Signal Gain | 22.5 dB @ 400 MHz / 9 dB @ 2100 MHz: Enables flexible gain distribution in multi-stage RF chains. |
| OIP3 | +48 dBm @ 2100 MHz: Supports high-linearity W-CDMA and LTE transmission with low adjacent channel leakage. |
| P1dB | 31 dBm @ 2100 MHz: Delivers 1 W saturated output power suitable for macro/microcell final stage amplification. |
| PAE | 53% @ +31 dBm Pout: Reduces thermal load and power supply requirements in continuous-wave and modulated operation. |
| Supply Voltage | +5 V DC: Simplifies system power architecture by eliminating need for multiple rail supplies or regulators. |
| VPD Control | 0–5 V analog control: Enables dynamic output power adjustment and full shutdown without external switches. |
Pinout & Package
Package: QSOP16G - 16-lead plastic surface-mount package with exposed ground paddle (29.4 mm² footprint), MSL1 rating, Sn/Pb lead finish, and thermal resistance of 24.1 °C/W junction-to-paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 7–10, 13–16 | GND | All pins and exposed paddle must be soldered to RF/DC ground plane for signal integrity and thermal dissipation. |
| 3 | VPD | Analog power-down/control voltage input; sets Icq and output power level-0 V = standby, +5 V = full power. |
| 6 | RFIN | DC-coupled RF input requiring off-chip matching network (e.g., L/C) for 50 Ω interface at target band. |
| 11, 12 | RFOUT | RF output and DC bias feed for output stage; requires external matching and DC blocking before antenna/interface. |
Key Features
| Feature | Design Value |
|---|---|
| InGaP HBT Process | Enables high breakdown voltage (>6 V), excellent reliability, and stable performance over -40°C to +85°C ambient. |
| Integrated Power Control | Single-pin VPD allows seamless transition between full-power transmit and ultra-low-current standby modes. |
| Broadband Matching | Validated performance across five discrete bands (400, 470, 900, 1900, 2100 MHz) using common external component values. |
| High Output IP3 | +48 dBm at 2.1 GHz enables >64 DPCH W-CDMA operation with ACPR < -45 dBc without digital predistortion. |
| Low Noise Figure | 7 dB typical up to 2.17 GHz supports use as driver stage in low-noise receiver paths when operated in reverse bias. |
Applications
| GSM/EDGE Base Station | W-CDMA Femtocell |
|---|---|
Use Scenario: Final-stage power amplification in 900/1800 MHz macrocell BTS transceivers. IC Role / Device Role / Timing Role: High-efficiency linear PA delivering +31 dBm Psat with < -45 dBc ACPR under 64 DPCH W-CDMA modulation. Use Value: Eliminates need for external harmonic filtering due to inherent broadband output match and high OIP3. | Use Scenario: Compact indoor small-cell transmitter supporting 2100 MHz UMTS bands. IC Role / Device Role / Timing Role: Single-supply, thermally efficient PA enabling fanless enclosure design with 53% PAE at +31 dBm. Use Value: VPD control allows dynamic power scaling to meet ETSI spectral mask requirements across varying traffic loads. |
| Fixed Wireless Access (FWA) | CDMA2000 Repeater System |
Use Scenario: Outdoor point-to-point backhaul link operating in 2.1–2.2 GHz ISM band. IC Role / Device Role / Timing Role: High-dynamic-range PA providing +48 dBm OIP3 to suppress intermodulation in dense RF environments. Use Value: Stable gain flatness (< ±1.5 dB) across 200 MHz bandwidth simplifies IF-to-RF upconversion chain design. | Use Scenario: Bidirectional repeater unit amplifying forward-link CDMA2000 signals at 1960 MHz. IC Role / Device Role / Timing Role: Driver + final-stage PA delivering +24 dBm channel power at -45 dBc ACP with single +5 V rail. Use Value: Integrated VPD enables automatic gain control (AGC) loop integration without external DAC or op-amp circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC452QS16GE | RoHS-compliant version with 100% matte tin lead finish and 260 °C peak reflow rating; identical electrical specs. | Required for lead-free manufacturing; same PCB layout and thermal design as HMC452QS16G. | Select HMC452QS16GE for new RoHS-compliant designs; HMC452QS16G remains valid for legacy Sn/Pb assembly. |
| QPA9807 | 0.6–2.7 GHz GaAs pHEMT PA with 32 dBm Psat, +45 dBm OIP3, and integrated active bias; requires +3.3 V supply. | Better suited for wideband LTE-A carrier aggregation; lacks VPD analog control but offers higher frequency coverage. | Choose QPA9807 when extending beyond 2.2 GHz or needing lower supply voltage; HMC452QS16G preferred for proven 400–2100 MHz linearity. |
Compared with HMC452QS16GE and QPA9807, the HMC452QS16G provides superior OIP3 at 2.1 GHz (+48 dBm vs. +45 dBm) and analog VPD control for fine-grained power management, while maintaining compatibility with existing Sn/Pb reflow processes and proven field reliability in cellular infrastructure.
Availability
HMC452QS16G is available at Aetrix Electronics and suitable for GSM/EDGE base stations, W-CDMA femtocells, fixed wireless access units, and CDMA2000 repeater systems requiring stable component supply and long-term production continuity.
Supply support for HMC452QS16G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-performance RF/Microwave product portfolio for communications infrastructure and defense applications.
The HMC452QS16G belongs to Hittite's Linear & Power Amplifiers - SMT family, engineered specifically for high-efficiency, high-linearity RF power amplification in multi-band cellular and fixed wireless transmitters.
FAQ
What is the maximum RF input power rating for the HMC452QS16G?
The HMC452QS16G has an absolute maximum RF input power rating of +31 dBm when Vs = Vpd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the InGaP HBT transistor junctions, especially under mismatched load conditions.
Does the HMC452QS16G require external matching components?
Yes, the HMC452QS16G requires external matching components on both RFIN (Pin 6) and RFOUT (Pins 11–12) to achieve optimal 50 Ω impedance transformation across its 0.4–2.2 GHz operating range. Application circuits specify discrete L/C values validated for 400 MHz, 900 MHz, and 2100 MHz bands.
What is the thermal resistance and recommended PCB layout for the HMC452QS16G?
The HMC452QS16G has a junction-to-ground-paddle thermal resistance of 24.1 °C/W. The exposed paddle and all GND pins (1, 2, 4, 5, 7–10, 13–16) must be soldered to a solid RF ground plane with multiple thermal vias to maintain junction temperature below 150 °C at full power.
Can the HMC452QS16G operate from a supply voltage other than +5 V?
The HMC452QS16G is characterized and optimized for +5 V DC operation. While functional at 4.5–5.5 V per gain/power/IP3 vs. supply voltage plots, operation outside +5 V reduces PAE and shifts P1dB/OIP3; the absolute maximum collector bias is +6.0 Vdc.
Is the HMC452QS16G pin-compatible with the HMC452QS16GE?
Yes, the HMC452QS16G and HMC452QS16GE share identical pinout, package dimensions, and electrical specifications. The only differences are lead finish (Sn/Pb vs. 100% matte Sn) and MSL reflow profile (235 °C vs. 260 °C peak), making them drop-in replacements in compatible assembly processes.
111041-HMC452QS16G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 2.1GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC452QS16G
111041-HMC452QS16G FAQ
1.How can I place an order for 111041-HMC452QS16G through Aetrix?
Please submit a Request for Quotation (RFQ) for 111041-HMC452QS16G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 111041-HMC452QS16G reliable?
The price and inventory of 111041-HMC452QS16G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 111041-HMC452QS16G is usually 5 days.
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5.How can I obtain technical support or documentation for 111041-HMC452QS16G?
For technical support, including 111041-HMC452QS16G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 111041-HMC452QS16G requirements.
6.How does Aetrix verify that 111041-HMC452QS16G is sourced from the original manufacturer or authorized distributors?
All 111041-HMC452QS16G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 111041-HMC452QS16G meets industry standards.
7.What is the process for return or replacement of 111041-HMC452QS16G?
All 111041-HMC452QS16G units undergo pre-shipment inspection (PSI). If there is an issue with 111041-HMC452QS16G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 111041-HMC452QS16G part is unused and in its original packaging.
Return procedure for 111041-HMC452QS16G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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