Analog Devices Inc. 112409-HMC578LC3B

Overview

HMC578LC3B from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC x2 active frequency multiplier in a RoHS-compliant 3×3 mm SMT package, delivering +15 dBm typical output power across 23–33 GHz when driven by +3 dBm input. It provides >20 dBc fundamental (Fo) and >30 dBc third-harmonic (3Fo) isolation at 28 GHz, with -132 dBc/Hz SSB phase noise at 100 kHz offset. It serves as an LO multiplier in point-to-point radios and VSAT systems.

For engineers reviewing the HMC578LC3B datasheet, HMC578LC3B pinout, HMC578LC3B application, or HMC578LC3B equivalent, key selection criteria include its 23–33 GHz output bandwidth, single +5 V supply operation at 81 mA, 50 Ω AC-coupled I/O, and requirement for multi-value bypassing (100 pF / 1 nF / 2.2 µF) on both Vdd1 and Vdd2 pins.

Technical Context

The HMC578LC3B employs GaAs PHEMT technology to achieve broadband x2 multiplication without external tuning elements. Its input operates from 11.5–16.5 GHz, producing harmonically clean output with Fo isolation >20 dBc and 3Fo isolation >30 dBc at 28 GHz - critical for minimizing LO feedthrough in heterodyne receiver chains.

It features integrated DC blocking and 50 Ω impedance matching on both RFIN and RFOUT pins, eliminating external matching networks. Supply pins Vdd1 and Vdd2 require independent 100 pF, 1 nF, and 2.2 µF bypass capacitors per pin to ensure stable operation across -40°C to +85°C.

Key Specifications

Pinout & Package

RoHS-compliant 12-lead ceramic QFN package (3×3 mm, 0.5 mm pitch) with exposed ground paddle. Alumina body, gold-over-nickel plating, MSL3 rating. Requires soldering of all ground leads (pins 1,3,7,9) and bottom paddle to PCB RF ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active frequency multiplier applications.

Compared with HMC1084LC3B and QM11024, the HMC578LC3B uniquely balances +15 dBm output, -132 dBc/Hz phase noise, and 3×3 mm footprint - making it optimal for space-constrained, high-performance 28 GHz communication systems where LO purity and power efficiency are co-critical.

Availability

HMC578LC3B is available at Aetrix Electronics and suitable for point-to-point radios, VSAT terminals, and test instrumentation requiring stable component supply, consistent RF performance across temperature, and RoHS-compliant SMT assembly.

Supply support for HMC578LC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014, integrating its high-frequency RF/Microwave portfolio into ADI's broader signal chain solutions. Hittite was renowned for GaAs MMIC innovation in microwave and millimeter-wave ICs.

The HMC578LC3B belongs to Hittite's legacy active frequency multiplier product line, designed specifically for compact, high-isolation LO generation in E-band communications, defense radar, and precision test equipment.

FAQ

What is the recommended bypass capacitor configuration for HMC578LC3B?

HMC578LC3B requires three parallel bypass capacitors per supply pin (Vdd1 and Vdd2): 100 pF (0402), 1,000 pF (0603), and 2.2 µF (tantalum or ceramic). This multi-value network suppresses noise across RF, switching, and low-frequency bands. The 2.2 µF capacitor must be placed closest to the pin, with short traces and direct connection to the ground paddle via multiple vias.

Does HMC578LC3B require external impedance matching networks?

No. HMC578LC3B integrates internal 50 Ω matching on both RFIN (pin 2) and RFOUT (pin 8), with AC coupling implemented on-chip. No external matching components are needed for nominal operation across 23–33 GHz, simplifying layout and improving repeatability in high-volume manufacturing.

What is the maximum input power rating for HMC578LC3B?

The absolute maximum RF input power for HMC578LC3B is +13 dBm at Vdd = +5 V. Operating above this level risks permanent damage to the GaAs PHEMT core. For reliable operation, input drive should remain within 0 to +6 dBm, where output power and phase noise are optimized per datasheet specifications.

How is thermal management handled in the HMC578LC3B package?

HMC578LC3B uses an alumina-based 3×3 mm QFN with an exposed ground paddle offering 135 °C/W thermal resistance (channel-to-ground). Effective thermal management requires soldering the paddle and all ground pins (1,3,7,9) to a solid PCB ground plane with ≥6 thermal vias (0.3 mm diameter) directly beneath the paddle to dissipate up to 670 mW at 85°C ambient.

Is HMC578LC3B suitable for space-grade applications?

HMC578LC3B is not radiation-hardened or QML-certified, but its operating temperature range (-40°C to +85°C), robust GaAs PHEMT process, and hermetic alumina package make it suitable for non-mission-critical space-qualified subsystems (e.g., LEO telemetry downlinks) when combined with system-level radiation mitigation and burn-in screening per customer requirements.