Analog Devices Inc. 112409-HMC814LC3B

Overview

HMC814LC3B from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT-based x2 active broadband frequency multiplier IC designed for RF signal generation in LO chains. It delivers +17 dBm typical output power across 13–24.6 GHz output range when driven by +4 dBm at 6.5–12.3 GHz input, with >25 dBc Fo/3Fo isolation and -136 dBc/Hz SSB phase noise at 100 kHz offset - enabling high-fidelity clock synthesis in OC-192/STM-64 systems.

For engineers reviewing the HMC814LC3B datasheet, HMC814LC3B pinout, HMC814LC3B application, or HMC814LC3B equivalent, key selection criteria include its 12-lead 3×3 mm RoHS-compliant SMT package, single +5 V supply operation at 88 mA, 50 Ω AC-coupled I/O, and suitability for space-constrained microwave radio and test instrumentation designs requiring low additive phase noise and high harmonic suppression.

Technical Context

The HMC814LC3B implements a monolithic GaAs pHEMT MMIC architecture optimized for second-harmonic generation without external tuning elements. Its internal bias network supports stable operation across -40°C to +85°C with integrated thermal management via alumina substrate and soldered ground paddle.

It operates as a fixed-ratio (×2) active multiplier with no control inputs or programmability - input and output are both 50 Ω AC-coupled, and all unused pins (4–6, 11) must be grounded per RF layout guidelines. Supply pins Vdd1/Vdd2 accept +5 V ±0.5 V with recommended multi-value bypassing (100 pF / 1 nF / 2.2 µF).

Key Specifications

Pinout & Package

Package: 12-lead 3×3 mm leadless ceramic SMT package (alumina body, gold-over-nickel plating, MSL3), with exposed ground paddle requiring solder connection to PCB RF ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active frequency multiplier applications.

Compared with HMC814LC3B, HMC1084LP3E offers narrower bandwidth and reduced output, while QPL9057 trades thermal robustness and harmonic suppression for footprint reduction - making HMC814LC3B the preferred choice for wideband, high-reliability microwave systems demanding consistent 13–24.6 GHz performance and military-grade environmental tolerance.

Availability

HMC814LC3B is available at Aetrix Electronics and suitable for SONET OC-192 clock generation, point-to-point microwave radios, and military radar sensor systems requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for HMC814LC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, specializing in GaAs, GaN, and SiGe MMIC solutions for defense, communications, and instrumentation markets.

The HMC814LC3B belongs to Hittite's legacy active frequency multiplier family, engineered specifically for high-isolation, low-phase-noise LO multiplication in microwave radio and optical transport systems - emphasizing broadband performance, surface-mount manufacturability, and ruggedized thermal design.

FAQ

What is the recommended input drive level for optimal performance of the HMC814LC3B?

The HMC814LC3B achieves best-in-class output power and phase noise at +4 dBm input drive, as validated in the datasheet's electrical specifications table. Operation between 0 and +6 dBm is supported, but output power rolls off below +2 dBm and compression begins above +5 dBm. For HMC814LC3B, maintaining +4 dBm ensures +17 dBm typical output and -136 dBc/Hz phase noise at 100 kHz offset - critical for OC-192 timing and radar LO applications.

Does the HMC814LC3B require external bias sequencing or power-up timing control?

No - the HMC814LC3B has no bias sequencing requirement. Both Vdd1 and Vdd2 pins accept +5 V ±0.5 V simultaneously, and the device powers up fully functional within nanoseconds of supply application. The HMC814LC3B integrates internal bias networks and requires only standard multilayer decoupling (100 pF, 1 nF, 2.2 µF) per supply pin - eliminating need for sequencers or delay circuits in LO chain designs.

Can the HMC814LC3B be used for subharmonic pumping or non-×2 multiplication?

No - the HMC814LC3B is a fixed-ratio ×2 active multiplier with no provision for subharmonic injection or alternative multiplication factors. Its GaAs pHEMT core and matching networks are optimized exclusively for second-harmonic generation from 6.5–12.3 GHz input to 13–24.6 GHz output. Using HMC814LC3B outside this configuration yields unpredictable conversion loss, poor isolation, and degraded phase noise - violating its specified operating conditions.

What is the thermal resistance and maximum channel temperature specification for the HMC814LC3B?

The HMC814LC3B has a channel-to-ground-paddle thermal resistance of 121 °C/W and a maximum channel temperature rating of 175 °C. At 88 mA and +5 V, it dissipates ~440 mW - well below the 743 mW continuous dissipation limit at 85 °C ambient. For reliable operation, the HMC814LC3B's exposed paddle must be soldered to a thermally robust ground plane with ≥6 vias to inner layers, per the manufacturer's layout guidelines.

Is the HMC814LC3B pin-compatible with other Hittite ×2 multipliers like the HMC1084LP3E?

No - although both HMC814LC3B and HMC1084LP3E use 3×3 mm packages, their pinouts differ: HMC814LC3B assigns Vdd to pins 10/12 and RFIN/RFOUT to pins 2/8, while HMC1084LP3E places Vdd on pins 1/12 and RFIN/RFOUT on pins 3/11. PCB redesign is required to substitute HMC814LC3B for HMC1084LP3E - confirming that HMC814LC3B is not a drop-in replacement despite shared package footprint.