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Analog Devices Inc. 113758-HMC570LC5

Part No.:
113758-HMC570LC5
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix113758-HMC570LC5.pdf
Description:
EVAL BOARD HMC570LC5
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Payment
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Inventory:1,163

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Product details

Overview

HMC570LC5 from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC I/Q downconverter IC designed for RF front-end signal translation in 17–21 GHz systems. It delivers 10 dB small-signal conversion gain, 3 dB noise figure, and 18 dB image rejection with 32-pin 5×5 mm SMT package. Used in satellite communications and military radar receivers where compact, high-isolation downconversion is required.

For engineers reviewing the HMC570LC5 datasheet, HMC570LC5 pinout, HMC570LC5 application, or HMC570LC5 equivalent, key selection criteria include its 17–21 GHz RF bandwidth, +4 dBm LO drive requirement, dual IF outputs (IF1/IF2), 2 LO-to-RF isolation of 65 dB, and need for external 90° hybrid to select sideband.

Technical Context

The HMC570LC5 integrates an RF LNA followed by an image-reject mixer driven by an on-chip active ×2 LO multiplier - eliminating external filtering before the mixer and suppressing thermal noise at the image frequency. Its architecture enables direct I/Q baseband generation without image filter dependency.

It operates with DC–3.5 GHz IF output bandwidth, requires external 90° hybrid for sideband selection, and uses separate VddLO, VddLO2, and VddRF supplies to optimize LO chain linearity and RF gain. All RF/IF ports are 50 Ω matched; IF outputs are DC-coupled but require current limiting ≤3 mA for DC operation.

Key Specifications

Parameter Value and Actual Design Meaning
RF Frequency Range17–21 GHz - supports full K-band uplink/downlink in satellite comms and point-to-point radio.
LO Frequency Range7–12 GHz - enables fundamental LO drive with ×2 multiplication to cover RF band.
IF BandwidthDC–3.5 GHz - allows wide instantaneous bandwidth I/Q digitization without IF filtering.
Conversion Gain10 dB typical - provides net gain in receiver chain, reducing cascaded noise contribution from subsequent stages.
Noise Figure3 dB - ensures minimal degradation of system noise floor in sensitive radar/EW applications.
Image Rejection18 dB typical - reduces image-band interference without requiring external image-reject filter.
2LO-to-RF Isolation65 dB - suppresses second-harmonic LO leakage into antenna path, critical for EMI compliance.
Supply Current125–165 mA at 3.5 V - defines power budget for bias network design and thermal management.

Pinout & Package

32-lead 5×5 mm leadless RoHS-compliant SMT package with alumina body, gold-over-nickel plating, and exposed ground paddle. Requires soldering all ground leads and paddle to PCB RF ground plane per MSL3 reflow profile (peak 260 °C).

Pin/Terminal Circuit Role Design Meaning
1, 3, 7VddLO / VddLO2 / VddRFSeparate bias supplies for LO amplifier stages and RF LNA - enable independent optimization of LO linearity and RF gain.
10, 19, 24, 29GNDDedicated RF/DC ground connections - must be low-inductance paths to minimize noise coupling and ensure stability.
11RF50 Ω AC-coupled RF input - matches standard K-band test equipment and antenna interfaces.
20, 23IF2 / IF1DC-coupled quadrature outputs - require external series capacitor for AC-coupled use; max ±3 mA DC current for DC operation.
30LO50 Ω AC-coupled LO input - accepts +4 dBm drive; internal ×2 multiplier generates required LO harmonic.
2, 4–6, 8, 9, 12–18, 21, 22, 25–28, 31, 32N/CNo-connect pins - may be grounded without performance impact; simplifies layout and improves thermal conduction.

Key Features

Feature Design Value
Integrated image-reject architectureEliminates need for external image filter before mixer, reducing board area and insertion loss in radar/EW receivers.
On-chip active ×2 LO multiplierEnables use of lower-frequency, higher-power LO sources while maintaining 17–21 GHz RF coverage.
32-pin 5×5 mm SMT packageReduces footprint by >50% vs. hybrid IRM assemblies and supports automated surface-mount assembly.
18 dB image rejection at 25°CProvides consistent sideband suppression across temperature without calibration or tuning components.
ESD rating Class 1B (HBM)Requires handling per ESD-sensitive device protocols - protects GaAs MMIC core during PCB assembly.

Applications

Point-to-Point Radio Satellite Communications

Use Scenario: High-capacity backhaul links operating in 18 GHz licensed band with stringent adjacent-channel interference requirements.

IC Role / Device Role / Timing Role: I/Q downconverter translating 17–21 GHz RF to baseband I/Q signals for digital demodulation.

Use Value: 18 dB image rejection prevents interference from mirror channel, enabling higher-order QAM without external filtering.

Use Scenario: Uplink/downlink transceivers in LEO satellite user terminals requiring compact, low-noise K-band reception.

IC Role / Device Role / Timing Role: Front-end downconverter providing I/Q outputs for coherent demodulation of QPSK/8PSK waveforms.

Use Value: 3 dB noise figure preserves link margin; 10 dB gain compensates for antenna feed losses and cable attenuation.

Military Radar Receivers Electronic Warfare (EW) Systems

Use Scenario: Pulse-Doppler radar front-ends needing wide instantaneous IF bandwidth and fast settling for pulse compression.

IC Role / Device Role / Timing Role: Image-reject downconverter generating DC–3.5 GHz I/Q outputs for real-time FFT-based Doppler processing.

Use Value: DC–3.5 GHz IF bandwidth supports ≥7 GHz instantaneous analysis bandwidth after quadrature sampling.

Use Scenario: Wideband signal intelligence (SIGINT) receivers detecting and characterizing unknown emitters across K-band.

IC Role / Device Role / Timing Role: High-isolation downconverter feeding ADCs in channelized receiver architectures.

Use Value: 65 dB 2LO-to-RF isolation prevents LO leakage from masking weak intercepted signals during scanning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar I/Q downconverter applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC8192LP5EWider RF range (10–22 GHz), higher IP3 (+5 dBm), but larger 7×7 mm package and no integrated LO multiplier.Requires external LO doubler; better suited for multi-band lab test setups than size-constrained field radios.Select when wider RF coverage and higher linearity outweigh size and integration trade-offs.
Qorvo QPB9015SiGe process, 16–22 GHz RF, integrated LO buffer and divider, but lower image rejection (12 dB typ) and no DC-coupled IF outputs.Lacks DC-coupled IF capability; limited to AC-coupled IF chains with external bias tees.Select when cost-sensitive volume production favors SiGe over GaAs and DC IF is not required.

Compared with HMC570LC5, HMC8192LP5E offers broader frequency coverage and higher linearity but demands more board space and external LO multiplication, while QPB9015 reduces BOM count via integrated LO division but sacrifices image rejection and DC IF support - making HMC570LC5 optimal for compact, high-performance K-band IRMs where integration and image suppression are prioritized.

Availability

HMC570LC5 is available at Aetrix Electronics and suitable for point-to-point radio, satellite communications, and military radar receivers requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for HMC570LC5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF/Microwave product portfolio, specializing in GaAs and GaN MMICs for defense, aerospace, and communications.

The HMC570LC5 belongs to Hittite's legacy IRM (Image Reject Mixer) product line, engineered specifically for compact, high-isolation K-band downconversion in size- and performance-constrained RF systems.

FAQ

What is the recommended LO drive level for optimal performance of the HMC570LC5?

The HMC570LC5 achieves best conversion gain (10 dB), noise figure (3 dB), and image rejection (18 dB) at +4 dBm LO drive. Lower drive degrades gain and image rejection; exceeding +8 dBm risks compression or reliability issues. The device includes an on-chip ×2 multiplier, so 7–12 GHz LO input is sufficient to cover the 17–21 GHz RF band. Always verify LO harmonics with spectrum analyzer during validation of HMC570LC5.

Does the HMC570LC5 require an external 90° hybrid, and why?

Yes, the HMC570LC5 requires an external 90° hybrid to combine IF1 and IF2 outputs and select the desired sideband (upper or lower). The device outputs true I and Q signals but does not internally resolve sideband ambiguity - the hybrid enables phase-coherent summation for image suppression. Without it, both sidebands appear simultaneously at baseband. This architecture gives designers flexibility to choose hybrid type (Lange, branch-line, etc.) based on IF frequency and PCB stack-up for HMC570LC5 integration.

Can the HMC570LC5 operate with DC-coupled IF outputs, and what are the limits?

Yes, IF1 (pin 23) and IF2 (pin 20) are DC-coupled and support operation down to 0 Hz, but each output must sink or source no more than ±3 mA DC current. Exceeding this causes non-function or permanent damage. For AC-coupled use, add a series capacitor sized for the lowest IF frequency; for DC operation, ensure downstream circuitry presents high impedance or uses active biasing within the ±3 mA limit. This constraint is critical in precision I/Q demodulator designs using HMC570LC5.

What is the thermal resistance and maximum power dissipation of the HMC570LC5?

The HMC570LC5 has a channel-to-package-bottom thermal resistance (RTH) of 104.6 °C/W. At TA = 85 °C, maximum continuous power dissipation is 860 mW; above 85 °C, derate by 9.56 mW/°C. With typical 3.5 V supply and 165 mA current, power dissipation is ~578 mW - well within safe limits if the exposed ground paddle is fully soldered to a thermally robust PCB ground plane with ≥6 thermal vias. Thermal design is essential for sustained HMC570LC5 performance in enclosed radar modules.

Is the HMC570LC5 pin-compatible with other Hittite IRM devices like the HMC571LC5?

No, the HMC570LC5 is not pin-compatible with HMC571LC5 or other variants in the HMC57x family. Pin functions differ - e.g., HMC571LC5 uses different Vdd assignments and lacks dedicated VddLO2. The 32-pin 5×5 mm outline is shared, but internal routing and biasing are unique to HMC570LC5. Layout reuse is not possible without schematic and footprint revision. Always consult the specific pinout table for HMC570LC5 before board design.

113758-HMC570LC5 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Downconverter
Frequency:
17GHz ~ 21GHz
Contents:
Board(s)
Utilized IC / Part:
HMC570LC5

113758-HMC570LC5 FAQ

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All 113758-HMC570LC5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 113758-HMC570LC5 meets industry standards.

7.What is the process for return or replacement of 113758-HMC570LC5?

All 113758-HMC570LC5 units undergo pre-shipment inspection (PSI). If there is an issue with 113758-HMC570LC5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 113758-HMC570LC5 part is unused and in its original packaging.

Return procedure for 113758-HMC570LC5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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