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Analog Devices Inc. 114445-HMC585MS8G
- Part No.:
- 114445-HMC585MS8G
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
114445-HMC585MS8G.pdf
- Description:
- BOARD EVAL HMC585MS8GE
- Quantity:
- Payment:
- Shipping:
Inventory:4,804
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Product details
Overview
HMC585MS8G from Hittite Microwave Corporation is a GaAs MMIC passive mixer with integrated LO amplifier, operating as a downconverter/upconverter in RF systems from 400–650 MHz with +33 dBm input IP3, 9 dB typical conversion loss, and -2 to +4 dBm LO drive requirement. It serves in cellular basestation front-ends requiring high linearity and compact integration.
For engineers reviewing the HMC585MS8G datasheet, HMC585MS8G pinout, HMC585MS8G application, or HMC585MS8G equivalent, this page delivers verified RF performance data, package mapping, thermal limits, isolation specs, and real-world deployment context for 2.5G/3G transceiver design.
Technical Context
The HMC585MS8G integrates a GaAs MMIC mixer core and monolithic LO amplifier in a single die, enabling operation across 400–650 MHz RF and 300–750 MHz LO bands with high-side or low-side injection. Its DC–250 MHz IF bandwidth supports both baseband and intermediate frequency architectures.
It delivers +33 dBm input IP3 at 0 dBm LO drive for downconversion and +27 dBm for upconversion, with 7 dB LO-to-RF and 10–15 dB LO-to-IF isolation. The device operates from a single +5 V supply drawing 50 mA, and requires external RF bypassing on Vdd and DC blocking on IF when not operating to DC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 400–650 MHz - defines usable signal band for cellular basestation receive/transmit paths |
| LO Frequency Range | 300–750 MHz - enables flexible high-side/low-side injection without external LO synthesis changes |
| IF Frequency Range | DC–250 MHz - supports zero-IF and low-IF receiver architectures with no external IF filtering needed |
| Input IP3 (Downconv.) | +33 dBm @ 0 dBm LO - ensures robust interference rejection in dense multi-carrier GSM/CDMA environments |
| Conversion Loss | 9 dB typical - sets minimum required LNA gain and dictates cascaded noise figure budget |
| LO Drive Level | -2 to +4 dBm - reduces need for external LO buffer stages, lowering system power and complexity |
| Supply Voltage / Current | +5 V @ 50 mA - compatible with standard logic rails and simplifies power delivery in compact RF modules |
Pinout & Package
Package: 8-lead MSOP (Mini Small Outline Package), body size 3.0 × 3.0 mm, exposed paddle for thermal and RF grounding. Lead finish: Sn/Pb, MSL1 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | LO Input | AC-coupled, 50 Ω matched port - requires external DC blocking capacitor and impedance-matched trace |
| 2 | N/C | No internal connection - must remain unconnected per datasheet; floating or grounded may degrade RF performance |
| 3, 6, 7 | GND | RF ground terminals - must be soldered directly to PCB ground plane with multiple vias for low-inductance return path |
| 4 | Vdd | +5 V supply for integrated LO amplifier - requires external RF bypass capacitor (e.g., 100 pF + 10 nF) near pin |
| 5 | IF Output/Input | DC-coupled port - supports DC-coupled I/Q demodulation; current limited to ±40 mA to prevent damage |
| 8 | RF Input/Output | DC-coupled, 50 Ω matched port - direct interface to antenna or filter without external bias tee |
Key Features
| Feature | Design Value |
|---|---|
| Integrated LO amplifier | Eliminates discrete LO buffer stage, reducing board area and insertion loss in LO path |
| +33 dBm input IP3 | Enables operation in high-interference environments like urban basestations without front-end attenuation |
| DC–250 MHz IF bandwidth | Supports direct-conversion receivers and wideband digital predistortion feedback loops |
| Single +5 V supply | Simplifies power architecture by avoiding dual-rail or negative supplies common in legacy mixers |
| MSOP-8 package with exposed paddle | Provides thermal dissipation path and low-inductance RF grounding for stable high-frequency operation |
Applications
| Cellular Basestation Receiver | GSM/GPRS/EDGE Transmitter |
|---|---|
Use Scenario: Downconverting 400–650 MHz RF signals to 50 MHz IF in macrocell receiver chains. IC Role / Device Role / Timing Role: Passive mixer with integrated LO amplifier performing RF-to-IF translation and LO amplification. Use Value: +33 dBm IP3 maintains dynamic range under strong adjacent-channel interferers; 9 dB conversion loss enables adequate SNR after LNA gain. |
Use Scenario: Upconverting baseband I/Q signals to 400–650 MHz for GSM 900/1800 MHz band transmission via harmonic mixing. IC Role / Device Role / Timing Role: Active upconverter mixer with built-in LO driver supporting low-IF or zero-IF modulation schemes. Use Value: -2 to +4 dBm LO drive tolerance allows direct interface to low-power synthesizers; DC–250 MHz IF supports full GPRS burst envelope fidelity. |
| CDMA/W-CDMA Repeater Front-End | Cable Modem Termination System (CMTS) |
Use Scenario: Bidirectional signal translation in outdoor repeaters covering 400–650 MHz licensed spectrum. IC Role / Device Role / Timing Role: Dual-role mixer handling both Rx downconversion and Tx upconversion with shared LO path. Use Value: High LO-to-RF (7 dB) and LO-to-IF (10–15 dB) isolation minimizes self-interference and improves repeater stability margin. |
Use Scenario: Downconverting DOCSIS-compliant upstream RF signals (5–42 MHz) into baseband for digital processing. IC Role / Device Role / Timing Role: High-linearity RF mixer serving as first-stage downconverter in CMTS upstream receiver path. Use Value: +27 dBm upconversion IP3 and 9 dB conversion loss ensure compliance with DOCSIS spectral mask requirements under multi-channel loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-IP3 SMT mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC1048LP4E | Wider RF range (30–4000 MHz), higher conversion loss (11 dB), no integrated LO amp | Requires external LO buffer; suited for broadband test equipment, not optimized for 400–650 MHz cellular efficiency | Select when ultra-wideband coverage outweighs IP3 and integration needs |
| ADL5801ACPZ-R7 | Higher LO drive (+13 dBm), lower IP3 (+25 dBm), 0.4–2.7 GHz RF range, integrated LO buffer | Designed for general-purpose wideband receivers; lacks DC–250 MHz IF support and optimized 400–650 MHz linearity | Select when wider RF tuning range and higher LO power tolerance are prioritized over cellular-band IP3 |
Compared with HMC585MS8G, HMC1048LP4E trades cellular-band optimization for bandwidth and HMC585MS8G's integrated LO amplifier eliminates external buffering, while ADL5801ACPZ-R7 offers broader RF coverage but sacrifices 8 dB of input IP3 critical for dense-spectrum basestation deployments.
Availability
HMC585MS8G is available at Aetrix Electronics and suitable for cellular basestation receivers, GSM/GPRS/EDGE transmitters, CDMA/W-CDMA repeaters, and cable modem termination systems requiring stable component supply and guaranteed long-term sourcing.
Supply support for HMC585MS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Hittite Microwave Corporation was a U.S.-based RF/microwave semiconductor company specializing in high-performance analog ICs for wireless infrastructure, defense, and test equipment before its acquisition by Analog Devices in 2014.
The HMC585MS8G belongs to Hittite's high-IP3 GaAs MMIC mixer family, engineered specifically for cellular infrastructure applications demanding superior linearity, compact integration, and reliable operation from -40°C to +85°C.
FAQ
What is the maximum RF input power rating for the HMC585MS8G?
The HMC585MS8G has an absolute maximum RF input power rating of +27 dBm. Exceeding this level risks permanent damage to the GaAs mixer diodes or LO amplifier. For continuous operation, designers should maintain RF input below +22 dBm (1 dB compression point) to preserve linearity and avoid distortion. The HMC585MS8G datasheet specifies this limit under Absolute Maximum Ratings on page 9-361.
Does the HMC585MS8G require external DC blocking capacitors on all RF/LO/IF ports?
The HMC585MS8G requires external DC blocking on the LO (Pin 1) and RF (Pin 8) ports because they are AC-coupled internally. The IF port (Pin 5) is DC-coupled and supports true DC operation, but must be externally DC-blocked if the application does not require DC response. The HMC585MS8G evaluation board uses 100 pF capacitors on LO and RF lines, as documented in the schematic on page 9-363.
Can the HMC585MS8G operate as both upconverter and downconverter?
Yes, the HMC585MS8G supports both upconversion and downconversion modes. Its RF, LO, and IF ports are bidirectional, and the datasheet provides separate IP3 and conversion gain data for each mode: +33 dBm IP3 (downconv.) and +27 dBm IP3 (upconv.) at 0 dBm LO drive. The HMC585MS8G achieves this flexibility through symmetric GaAs MMIC topology and wide LO range (300–750 MHz).
What is the thermal management requirement for the HMC585MS8G in continuous operation?
The HMC585MS8G features an exposed paddle that must be soldered to a solid PCB ground plane with ≥6 thermal vias (0.3 mm diameter) to dissipate heat. At 85°C ambient, its max continuous power dissipation is 0.85 W, derating by 13.2 mW/°C above that. The HMC585MS8G package outline drawing (page 9-361) mandates grounding all GND pins (3,6,7) and the paddle to maintain channel temperature ≤150°C.
Is the HMC585MS8G RoHS-compliant?
The HMC585MS8G is not RoHS-compliant; it uses Sn/Pb lead finish and low-stress injection molded plastic. Its RoHS-compliant variant is the HMC585MS8GE, which substitutes 100% matte tin plating and RoHS-compliant packaging. Both share identical electrical performance and pinout, but HMC585MS8G requires peak reflow at 235°C versus 260°C for the GE version. The HMC585MS8G marking "H585" appears on the top of the MSOP-8 body.
114445-HMC585MS8G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Mixer
- Frequency:
- 400MHz ~ 650MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC585MS8G
114445-HMC585MS8G FAQ
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Please submit a Request for Quotation (RFQ) for 114445-HMC585MS8G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 114445-HMC585MS8G is sourced from the original manufacturer or authorized distributors?
All 114445-HMC585MS8G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 114445-HMC585MS8G meets industry standards.
7.What is the process for return or replacement of 114445-HMC585MS8G?
All 114445-HMC585MS8G units undergo pre-shipment inspection (PSI). If there is an issue with 114445-HMC585MS8G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 114445-HMC585MS8G part is unused and in its original packaging.
Return procedure for 114445-HMC585MS8G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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