Analog Devices Inc. 115556-HMC561LP3

Overview

HMC561LP3 from Analog Devices (formerly Hittite Microwave) is a GaAs PHEMT-based x2 active frequency multiplier IC in a 3×3 mm RoHS-compliant SMT package, delivering +14 dBm typical output power across 8–21 GHz output range when driven by +5 dBm input at 4–10.5 GHz. It provides 15 dBc Fo/3Fo isolation at 16 GHz and -139 dBc/Hz SSB phase noise at 100 kHz offset, enabling high-fidelity LO multiplication in microwave radio front-ends.

For engineers reviewing the HMC561LP3 datasheet, HMC561LP3 pinout, HMC561LP3 application, or HMC561LP3 equivalent, key selection criteria include its 8–21 GHz output bandwidth, +14 dBm output power, 15 dBc fundamental suppression, -139 dBc/Hz phase noise at 100 kHz, and compatibility with surface-mount RF PCB assembly using 50 Ω AC-coupled I/O and dual-bias supply (Vdd = 5 V, Vgg adjustable).

Technical Context

The HMC561LP3 operates as a broadband ×2 active multiplier with fixed multiplication factor, requiring +5 dBm nominal input drive to achieve optimal output power and isolation. Its GaAs PHEMT architecture enables wideband operation from 4–10.5 GHz input while suppressing Fo, 3Fo, and 4Fo spurs via internal harmonic termination and impedance matching.

Biasing uses dual-supply configuration: Vdd = +5 V ± 0.5 V for drain supply and Vgg adjustable between -2.0 V and -1.2 V to set Idd = 98 mA. Input and output ports are AC-coupled and 50 Ω matched, eliminating external DC blocking requirements in standard RF layouts.

Key Specifications

Pinout & Package

Package: 3×3 mm leadless RoHS-compliant SMT package with exposed ground paddle; requires soldering of all ground leads and paddle to PCB RF ground per Hittite Application Note.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active frequency multiplier applications.

Compared with HMC561LP3, HMC562LP3E extends upper frequency reach but sacrifices output power and phase noise, while QM11020 offers broader input bandwidth at the cost of spur suppression and thermal efficiency-making HMC561LP3 optimal for X/Ku-band LO chains demanding best-in-class noise and isolation.

Availability

HMC561LP3 is available at Aetrix Electronics and suitable for point-to-point radios, VSAT terminals, and test instrumentation requiring stable component supply, consistent RF performance across temperature, and RoHS-compliant SMT manufacturability.

Supply support for HMC561LP3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation markets.

The HMC561LP3 belongs to Hittite's active frequency multiplier product line, designed specifically for high-efficiency, low-phase-noise LO generation in microwave wireless infrastructure and aerospace systems.

FAQ

What is the recommended input drive level for optimal performance of the HMC561LP3?

The HMC561LP3 achieves peak output power (+14 dBm), best Fo isolation (15 dBc), and lowest phase noise (-139 dBc/Hz) when driven with +5 dBm input power across its 4–10.5 GHz input band. Operation is supported from 0 to +6 dBm, but deviation outside ±1 dB of +5 dBm reduces output flatness and increases harmonic content. The HMC561LP3 datasheet specifies +5 dBm as the nominal drive condition for all typical electrical specifications.

Does the HMC561LP3 require external DC blocking capacitors on RFIN or RFOUT?

No, the HMC561LP3 does not require external DC blocking capacitors on RFIN or RFOUT because both ports are internally AC-coupled and 50 Ω matched. Pin 2 (RFIN) and Pin 11 (RFOUT) are designed for direct connection to 50 Ω transmission lines. External blocking is unnecessary and may degrade broadband match or introduce parasitic resonances in the 8–21 GHz band.

How is gate bias (Vgg) adjusted for the HMC561LP3, and what is its function?

Vgg on Pin 15 controls the GaAs PHEMT's operating point to set Idd at 98 mA. It must be adjusted between -2.0 V and -1.2 V using a precision voltage source or resistor divider, per the "MMIC Amplifier Biasing Procedure" application note. Correct Vgg tuning ensures stable gain, optimal phase noise, and minimal thermal drift - critical for repeatable HMC561LP3 performance across temperature and unit-to-unit variation.

What is the thermal resistance and maximum power dissipation of the HMC561LP3?

The HMC561LP3 has a channel-to-ground-paddle thermal resistance of 102 °C/W. At 85 °C case temperature, its continuous power dissipation is rated at 635 mW, derating by 9.8 mW/°C above that. With 5 V × 98 mA = 490 mW typical power consumption, the HMC561LP3 operates well within thermal limits when the exposed paddle is soldered to a solid RF ground plane with ≥6 thermal vias, as specified in the HMC561LP3 evaluation board layout guidelines.

Is the HMC561LP3 pin-compatible with the non-RoHS HMC561LP3 variant?

Yes, the HMC561LP3 (Sn/Pb) and HMC561LP3E (100% matte Sn) share identical pinout, package dimensions, land pattern, and electrical specifications. The only differences are lead finish and peak reflow temperature (235 °C vs. 260 °C). No PCB layout changes are required when migrating between them, though solder paste and profile must be adjusted to match the respective MSL1 reflow specification for each variant.