Analog Devices Inc. 115739-HMC573LC3B

Overview

HMC573LC3B from Analog Devices (formerly Hittite Microwave) is a GaAs MMIC x2 active frequency multiplier in a 3×3 mm RoHS-compliant SMT package, delivering +12 dBm typical output power across 8–22 GHz output range when driven by +5 dBm input. It provides >20 dBc Fo isolation and -134 dBc/Hz SSB phase noise at 100 kHz offset, serving as an LO multiplier in point-to-point radio transceivers.

For engineers reviewing the HMC573LC3B datasheet, HMC573LC3B pinout, HMC573LC3B application, or HMC573LC3B equivalent, key selection criteria include its 8–22 GHz output bandwidth, +5 V single-supply operation at 92 mA, 3×3 mm ceramic package with exposed ground paddle, and verified Fo/3Fo isolation performance in RF front-end multiplier chains.

Technical Context

The HMC573LC3B implements a two-stage GaAs PHEMT-based active doubler architecture with integrated bias control via Vgg terminal, enabling precise Idd tuning to 92 mA. Its input operates from 4–11 GHz, producing harmonically clean 2× output with measured Fo isolation >20 dBc and 3Fo isolation >25 dBc at 16 GHz.

Designed for surface-mount RF assembly, it features AC-coupled 50 Ω RFIN and RFOUT ports, requires external bypassing (100 pF / 1 nF / 2.2 µF), and mandates grounding of all GND pins (1,3,7,9) plus the bottom paddle per RF layout best practices.

Key Specifications

Pinout & Package

Package: 3×3 mm leadless ceramic SMT (alumina body, exposed ground paddle); RoHS-compliant, MSL3 rated, requires soldering of all GND pins and bottom paddle to PCB RF ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active frequency multiplier applications.

Compared with HMC572LC3B and QM11020, the HMC573LC3B uniquely balances 8–22 GHz coverage, +12 dBm output, and −134 dBc/Hz phase noise in a compact 3×3 mm package-making it optimal for high-performance Ku-band VSAT and military radios where spectral purity and bandwidth are non-negotiable.

Availability

HMC573LC3B is available at Aetrix Electronics and suitable for point-to-point radio development, VSAT outdoor unit manufacturing, and military radar test instrumentation requiring stable component supply and guaranteed long-term availability.

Supply support for HMC573LC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and continues to manufacture and support its high-frequency RF portfolio, including GaAs MMICs for defense, communications, and instrumentation markets.

The HMC573LC3B belongs to Hittite's legacy active multiplier product line, engineered specifically for broadband LO generation in microwave wireless infrastructure where harmonic suppression and phase noise are critical system-level constraints.

FAQ

What is the recommended input drive level for optimal performance of the HMC573LC3B?

The HMC573LC3B achieves best output power and phase noise performance at +5 dBm input drive. It operates linearly from +0 to +6 dBm, but output power rolls off above +6 dBm and Fo isolation degrades beyond +10 dBm absolute maximum rating. For production designs, +4 to +6 dBm is the validated drive window ensuring consistent +12 dBm output and >20 dBc Fo suppression across temperature.

How should the Vgg pin be biased on the HMC573LC3B?

Vgg on the HMC573LC3B must be adjusted between -1.5 V and ~1.1 V to achieve the target supply current of 92 mA at Vdd = +5 V. This is done using a precision voltage source or resistor divider with low-noise filtering. The "MMIC Amplifier Biasing Procedure" application note (Hittite AN-001) specifies that Vgg tuning directly controls gain flatness and phase noise-deviations cause >1 dB output variation and >2 dBc degradation in Fo isolation.

Is the HMC573LC3B pin-compatible with other Hittite multiplier variants like the HMC572LC3B?

No, the HMC573LC3B is not pin-compatible with the HMC572LC3B despite identical 3×3 mm package dimensions. While both share ground pin locations (1,3,7,9), the HMC572LC3B uses pin 12 for Vgg and pin 10 for Vdd-same as HMC573LC3B-but its internal bias network differs, and its RFOUT (pin 8) exhibits different impedance behavior below 12 GHz. Layout reuse requires verification of return loss and isolation across the intended band.

What PCB materials and grounding practices are required for optimal HMC573LC3B RF performance?

For optimal HMC573LC3B performance, use RF-grade laminates such as Rogers RO4350B or Taconic RF-35 with controlled 50 Ω microstrip routing. All GND pins (1,3,7,9) and the exposed bottom paddle must be soldered to a solid top-layer ground plane, connected to inner/layer ground planes via ≥8 thermal vias within 2 mm of each GND pad. Evaluation board 115864 uses Rogers 4350 and validates this approach for <−134 dBc/Hz phase noise.

Does the HMC573LC3B require external matching networks at RFIN or RFOUT?

No, the HMC573LC3B integrates 50 Ω matching on both RFIN (pin 2) and RFOUT (pin 8), which are AC-coupled internally. External DC blocking or matching components are unnecessary. However, the application circuit mandates three-tier bypassing on Vdd (100 pF, 1 nF, 2.2 µF) placed within 1 mm of pin 10, and Vgg (pin 12) requires low-noise RC filtering to prevent supply-induced phase noise degradation in the HMC573LC3B.