Analog Devices Inc. 115857-HMC633LC4
- Part No.:
- 115857-HMC633LC4
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
115857-HMC633LC4.pdf
- Description:
- EVAL BOARD HMC633LC4
- Quantity:
- Payment:

- Shipping:

Inventory:3,583
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Product details
Overview
HMC633LC4 from Analog Devices (formerly Hittite Microwave) is a GaAs PHEMT MMIC driver amplifier operating from 5.5 to 17 GHz, delivering 30 dB gain, +23 dBm P1dB, and +30 dBm output IP3 at 180 mA from a +5 V supply. It features DC-blocked, 50 Ω matched I/Os in a leadless 4×4 mm ceramic SMT package and serves as a broadband LO driver or RF stage in microwave radio transceivers.
For engineers reviewing the HMC633LC4 datasheet, HMC633LC4 pinout, HMC633LC4 application, or HMC633LC4 equivalent, this amplifier's temperature-stable gain (±0.04 dB/°C), low noise figure (7 dB typ.), and bias flexibility (Vgg adjustable from –2 to 0 V) support high-linearity, wideband system design in point-to-point radios and military communications.
Technical Context
The HMC633LC4 employs a monolithic GaAs PHEMT architecture with four independent drain supply pins (Vdd1–Vdd4) and a single gate control pin (Vgg) for precise bias tuning. Its internal matching eliminates external components across 5.5–17 GHz, enabling direct integration into 50 Ω RF signal paths without impedance transformation.
It operates over –40 °C to +85 °C with thermal resistance of 90.23 °C/W (channel to package bottom), requiring soldering of all ground leads and the exposed paddle to PCB RF ground per MSL3 reflow guidelines. Reverse isolation exceeds –20 dB across band, supporting stable cascaded amplifier configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 5.5–17 GHz continuous operation - supports full-bandwidth microwave radio links without band switching. |
| Small-Signal Gain | 30 dB typical - enables single-stage amplification of weak LO or IF signals before mixer stages. |
| P1dB Output Power | +23 dBm - delivers sufficient drive level for high-performance mixers and upconverters. |
| Output IP3 | +30 dBm - ensures low intermodulation distortion in multi-carrier systems like VSAT and PMP radios. |
| Noise Figure | 7 dB typical - maintains signal integrity in receiver front-end driver applications. |
| Supply Current | 180 mA at +5 V - defines power budget for compact RF modules with thermal constraints. |
| Input/Output Match | 50 Ω DC-blocked - allows drop-in replacement in existing microstrip layouts without matching networks. |
Pinout & Package
Package: 24-lead leadless ceramic surface-mount package (4×4 mm, 16 mm²), alumina body with gold-over-nickel plating, MSL3 rated, with exposed ground paddle requiring solder connection to PCB RF ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5–8, 11–14, 18, 21, 23 | N/C | No internal connection; may be tied to ground without affecting RF performance. |
| 2, 4, 15, 17 | GND | Package-side ground terminals - must be soldered to PCB ground plane for RF stability and thermal dissipation. |
| 3 | RFIN | AC-coupled 50 Ω RF input - accepts broadband signal without external DC blocking or matching. |
| 9 | Vgg | Gate bias control pin - sets quiescent current via adjustable negative voltage (–2 to 0 V) for PAE/gain trade-off. |
| 16 | RFOUT | AC-coupled 50 Ω RF output - delivers amplified signal directly to next stage with minimal insertion loss. |
| 19–20, 22, 24 | Vdd1–Vdd4 | Four independent drain supply inputs - enable distributed power delivery and improved thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband 5.5–17 GHz operation | Covers C-, X-, Ku-bands in one device - reduces BOM count for multi-band microwave radios. |
| +30 dBm OIP3 with +23 dBm P1dB | Enables high dynamic range in dense spectral environments such as point-to-multipoint base stations. |
| DC-blocked, 50 Ω matched I/Os | Eliminates need for external DC blocks or matching components - simplifies layout and improves repeatability. |
| Adjustable Vgg bias (–2 to 0 V) | Allows optimization between gain (+30 dB) and power-added efficiency (24% at Psat) without hardware change. |
| Thermal resistance 90.23 °C/W | Supports reliable operation up to +85 °C ambient when mounted on thermally enhanced PCBs or heatsinks. |
Applications
| Point-to-Point Radios | LO Driver for Mixers |
|---|---|
|
Use Scenario: High-capacity backhaul links operating in 6–11 GHz licensed bands with stringent EVM and ACLR requirements. IC Role / Device Role / Timing Role: Final-stage RF driver amplifying IF-to-RF upconverted signals prior to antenna feed. Use Value: 30 dB gain and +30 dBm IP3 maintain signal fidelity across 256-QAM modulation under fading conditions. |
Use Scenario: Local oscillator path in dual-conversion superheterodyne receivers for satellite ground terminals. IC Role / Device Role / Timing Role: LO buffer/driver ensuring clean, high-power injection into passive or active mixers. Use Value: Low 7 dB noise figure prevents degradation of receiver noise floor; 50 Ω match minimizes LO leakage. |
| Point-to-Multi-Point Radios & VSAT | Military & Space Communications |
|
Use Scenario: Subscriber unit RF front-end in 10.7–12.75 GHz VSAT systems requiring high linearity and thermal stability. IC Role / Device Role / Timing Role: Transmit chain driver compensating for splitter loss and cable attenuation before power amplifier input. Use Value: Gain flatness ±1.5 dB over band and <0.04 dB/°C drift ensure consistent link budget across environmental extremes. |
Use Scenario: Radar warning receiver (RWR) front-end and electronic warfare (EW) jammer exciter modules. IC Role / Device Role / Timing Role: Wideband gain block in fast-hopping RF signal chains operating from –40 °C to +85 °C. Use Value: MSL3 packaging and 175 °C channel temperature rating support ruggedized, conduction-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF driver amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPL9057 | Wider bandwidth (0.6–6.0 GHz), lower gain (22 dB), +27 dBm P1dB, +42 dBm IP3 - GaN-based, higher supply voltage (8 V). | Optimized for sub-6 GHz 5G infrastructure; not suitable for Ku-band (>12 GHz) use. | Select for cost-sensitive, lower-frequency macro base station drivers where bandwidth <6 GHz suffices. |
| Mini-Circuits PSA-2043+ | Narrower bandwidth (2–4 GHz), lower gain (20 dB), +22 dBm P1dB, +37 dBm IP3 - GaAs pHEMT, +5 V supply, 16-pin QFN. | Targeted at S-band radar and test equipment; lacks Ku-band coverage and thermal rating. | Choose for lab-grade signal generation where size and ease of evaluation outweigh frequency range needs. |
Compared with QPL9057 and PSA-2043+, the HMC633LC4 uniquely covers 5.5–17 GHz with 30 dB gain and MSL3-compliant ceramic packaging - making it the only option among the three qualified for Ku-band VSAT and military airborne RF front-ends requiring wide instantaneous bandwidth and thermal robustness.
Availability
HMC633LC4 is available at Aetrix Electronics and suitable for point-to-point radios, LO driver circuits, and military communications systems requiring stable component supply across extended temperature ranges and high-volume production cycles.
Supply support for HMC633LC4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF/Microwave portfolio into precision analog and RF solutions for defense, aerospace, and communications.
The HMC633LC4 belongs to Hittite's MMIC driver amplifier product line, engineered specifically for broadband microwave radio transceivers demanding high linearity, wide bandwidth, and repeatable SMT integration.
FAQ
What is the recommended gate bias voltage range for the HMC633LC4?
The HMC633LC4 requires gate bias voltage (Vgg) between –2 V and 0 V to achieve nominal 180 mA supply current. Adjusting Vgg within this range allows trade-offs between gain and power-added efficiency: more negative Vgg reduces current and gain but improves PAE. The datasheet specifies –0.7 V as typical for 180 mA operation, and external bias circuitry must follow Hittite's MMIC Amplifier Biasing Procedure to avoid instability or damage. Always verify Vgg with calibrated instrumentation during prototype validation of the HMC633LC4.
Does the HMC633LC4 require external matching components at RF ports?
No, the HMC633LC4 has internally matched 50 Ω input and output impedances with integrated DC blocking capacitors - no external matching networks, baluns, or DC blocks are needed for standard operation across 5.5–17 GHz. This simplifies PCB layout and improves repeatability in high-frequency designs. However, the application circuit does specify external bypass capacitors (100 pF, 1000 pF, and 2.2 µF) on Vdd and Vgg lines to suppress supply noise and ensure stability. These are decoupling elements, not impedance-matching components, and are mandatory per the HMC633LC4 reference design.
What is the maximum allowable RF input power for the HMC633LC4?
The absolute maximum RF input power for the HMC633LC4 is +5 dBm when Vdd = +5 Vdc, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the GaAs PHEMT transistors due to gate leakage or thermal runaway. In normal operation, input power should remain below –10 dBm to maintain linear amplification and avoid compression or distortion. For high-input scenarios, an external attenuator or limiter is required upstream of the HMC633LC4 to protect the device while preserving system-level dynamic range.
How is thermal management handled for the HMC633LC4 in high-power operation?
The HMC633LC4 dissipates up to 0.99 W continuously at 85 °C ambient, with thermal resistance of 90.23 °C/W (channel to package bottom). Effective thermal management requires soldering all ground leads and the exposed paddle directly to a multilayer PCB's internal ground plane using ≥8 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). For sustained operation above 70 °C ambient, mounting the PCB on an aluminum heatsink with thermal interface material is recommended. The HMC633LC4 evaluation board (115855) uses Rogers 4350 substrate and is designed for such thermal loads - refer to its layout for best practices in RF and thermal co-design.
Is the HMC633LC4 pin-compatible with other Hittite driver amplifiers like the HMC634LC4?
No, the HMC633LC4 is not pin-compatible with the HMC634LC4 or other members of the HMC63xLC4 family. Although both share the same 4×4 mm ceramic package footprint, the HMC634LC4 has different pin assignments - notably, its RFIN and RFOUT are on pins 1 and 24 respectively, whereas the HMC633LC4 places RFIN on pin 3 and RFOUT on pin 16. Additionally, Vdd distribution differs across variants. Substituting without layout revision will cause functional failure. Always consult the specific pinout diagram for each part; the HMC633LC4 pin configuration is validated only for its own application circuit and evaluation board (115855).
115857-HMC633LC4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 5.5GHz ~ 17GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC633LC4
115857-HMC633LC4 FAQ
1.How can I place an order for 115857-HMC633LC4 through Aetrix?
Please submit a Request for Quotation (RFQ) for 115857-HMC633LC4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 115857-HMC633LC4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 115857-HMC633LC4 is usually 5 days.
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5.How can I obtain technical support or documentation for 115857-HMC633LC4?
For technical support, including 115857-HMC633LC4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 115857-HMC633LC4 requirements.
6.How does Aetrix verify that 115857-HMC633LC4 is sourced from the original manufacturer or authorized distributors?
All 115857-HMC633LC4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 115857-HMC633LC4 meets industry standards.
7.What is the process for return or replacement of 115857-HMC633LC4?
All 115857-HMC633LC4 units undergo pre-shipment inspection (PSI). If there is an issue with 115857-HMC633LC4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 115857-HMC633LC4 part is unused and in its original packaging.
Return procedure for 115857-HMC633LC4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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