Analog Devices Inc. 115927-HMC590LP5

Overview

115927-HMC590LP5 from Analog Devices is a GaAs pHEMT MMIC power amplifier operating from 6.0 to 9.5 GHz, delivering +31 dBm saturated output power, 21 dB small-signal gain, and 23% PAE at +7 V / 820 mA. It is DC-coupled input/output matched to 50 Ω, requires no external matching components, and serves as a final-stage RF power amplifier in point-to-point radio transmitters.

For engineers reviewing the 115927-HMC590LP5 datasheet, 115927-HMC590LP5 pinout, 115927-HMC590LP5 application, or 115927-HMC590LP5 equivalent, key selection criteria include its 6–9.5 GHz bandwidth, +40 dBm OIP3 at 520 mA bias, +30 dBm P1dB at 820 mA bias, QFN LFCSP-32 package with exposed thermal pad, and gate voltage tuning (Vgg = −2 to 0 V) for precise Idd control.

Technical Context

The 115927-HMC590LP5 integrates a single-stage GaAs pHEMT amplifier core optimized for broadband linear operation across X-band. Its internal bias network enables stable DC operation with externally adjustable Vgg, while integrated 50 Ω RF terminations eliminate need for external matching networks at both RFIN and RFOUT.

Thermal management relies on the 5 mm × 5 mm LFCSP package's exposed copper pad and low thermal resistance (16.72 °C/W channel-to-package), supporting continuous operation from −55 °C to +85 °C ambient. Reverse isolation exceeds −30 dB across band, minimizing oscillator pulling in transmitter architectures.

Key Specifications

Pinout & Package

Package: 32-lead RoHS-compliant LFCSP (HCP-32-3), 5 mm × 5 mm × 0.9 mm, with exposed thermal pad. JEDEC MO-220-VHHD-4 compliant; MSL Level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with HMC451LC3 and QPA9807, the 115927-HMC590LP5 uniquely delivers +31 dBm Psat with tunable OIP3/P1dB trade-off across full 6–9.5 GHz band in a thermally optimized LFCSP, making it optimal for high-reliability X-band infrastructure where output power and linearity are co-constrained.

Availability

115927-HMC590LP5 is available at Aetrix Electronics and suitable for point-to-point radios, military communications, and space payload telemetry requiring stable component supply, traceable lot control, and long-term lifecycle support.

Supply support for 115927-HMC590LP5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The HMC590LP5E belongs to Analog Devices' Hittite Microwave MMIC amplifier product line, engineered specifically for high-linearity, high-output-power X-band wireless infrastructure and aerospace applications.

FAQ

What is the recommended gate bias voltage range to achieve nominal Idd for 115927-HMC590LP5?

The 115927-HMC590LP5 requires Vgg between −2.0 V and 0 V DC to set Idd = 820 mA at +7 V supply. Adjusting Vgg within this range allows optimization of P1dB (+30 dBm) or OIP3 (+40 dBm). The device datasheet specifies that Vgg must be applied through a low-noise, well-bypassed source to avoid instability. For repeatable results, use the "MMIC Amplifier Biasing Procedure" Application Note referenced in the 115927-HMC590LP5 documentation.

Does 115927-HMC590LP5 require external matching components for 50 Ω operation?

No, the 115927-HMC590LP5 features fully integrated 50 Ω input and output matching networks. Its RFIN and RFOUT pads are AC-coupled and impedance-matched, eliminating the need for external series capacitors or shunt inductors in standard applications. This simplifies PCB layout and improves repeatability across manufacturing lots-confirmed by the "General Description" and "Application Circuit" sections of the 115927-HMC590LP5 datasheet.

What thermal management is required for continuous operation of 115927-HMC590LP5 at maximum output power?

For continuous +31 dBm operation, the 115927-HMC590LP5 must be mounted on a PCB with a solid ground plane and ≥6 thermal vias under its exposed pad, connected to an external heatsink. Its thermal resistance is 16.72 °C/W (channel-to-package), and maximum channel temperature is 175 °C. At +85 °C ambient, derating is required above 75 °C per the datasheet's 59.8 mW/°C rule-ensuring reliable operation requires active or passive heatsinking per the 115927-HMC590LP5 Evaluation PCB layout guidelines.

Can 115927-HMC590LP5 operate outside the 6–9.5 GHz band specified in its datasheet?

The 115927-HMC590LP5 is characterized and guaranteed for operation from 6.0 to 9.5 GHz. While gain and output power may persist beyond this range (e.g., measurable response up to 10 GHz), parameters such as return loss, OIP3, and PAE degrade outside the specified band. The datasheet explicitly defines minimum/typical/max values only within 6–9.5 GHz; using 115927-HMC590LP5 outside this range requires full system-level validation and is not supported by Analog Devices' specifications.

What is the ESD sensitivity classification for 115927-HMC590LP5, and how should it be handled?

The 115927-HMC590LP5 is classified as HBM Class 0B with 200 V ESD withstand capability. It must be handled using standard Class 0B precautions: grounded wrist straps, dissipative mats, ionized air, and shielded packaging. The "ELECTROSTATIC SENSITIVE DEVICE" warning in the datasheet mandates strict adherence-failure to observe these precautions risks latent or catastrophic failure of the GaAs pHEMT core, which cannot be recovered post-damage. This applies equally to solder reflow and manual assembly of the 115927-HMC590LP5.