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Analog Devices Inc. 117494-HMC659LC5
- Part No.:
- 117494-HMC659LC5
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
117494-HMC659LC5.pdf
- Description:
- EVAL BOARD HMC659LC5
- Quantity:
- Payment:
- Shipping:
Inventory:4,556
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Product details
Overview
The HMC659LC5 from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT MMIC distributed power amplifier operating from DC to 15 GHz, delivering +27.5 dBm P1dB output power, 19 dB small-signal gain, and +35 dBm output IP3 at +8 V/300 mA supply. It features 50 Ω matched I/Os, ±1.4 dB gain flatness across full bandwidth, and is housed in a RoHS-compliant 32-lead 5 × 5 mm ceramic SMT package - ideal for EW, radar, and test instrumentation signal chains.
For engineers reviewing the HMC659LC5 datasheet, HMC659LC5 pinout, HMC659LC5 application, or HMC659LC5 equivalent, key selection criteria include its wideband DC–15 GHz operation, internal 50 Ω matching eliminating external matching components, thermal resistance of 27.3 °C/W, MSL3 reflow rating, and Class 1A ESD sensitivity requiring strict handling protocols.
Technical Context
The HMC659LC5 employs a distributed amplifier architecture using GaAs pHEMT transistors to achieve broadband operation without frequency-dependent tuning. Its two-stage gate biasing (Vgg1 and Vgg2) enables precise control of drain current (300 mA typical) and optimal linearity across temperature.
Internally matched 50 Ω input and output ports eliminate external DC blocking or matching networks. The 32-lead ceramic package integrates a ground paddle and multiple ground pins (pins 6, 21, and all N/C pins) to minimize parasitic inductance and ensure stable RF grounding up to 15 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | DC to 15 GHz - supports baseband through Ku-band applications without band switching. |
| P1dB Output Power | +27.5 dBm - delivers usable linear power for medium-power RF front-ends in radar and ECM. |
| Small-Signal Gain | 19 dB - provides high gain with ±1.4 dB flatness, reducing need for gain-staging compensation. |
| Output IP3 | +35 dBm - enables high dynamic range in multi-tone environments like microwave radio and VSAT. |
| Supply Voltage / Current | +8 V @ 300 mA - low-voltage, moderate-current operation simplifies power delivery and thermal management. |
| Noise Figure | 2.5 dB typical - suitable as driver stage where noise contribution must remain low before final PA stage. |
| Thermal Resistance | 27.3 °C/W - requires direct thermal coupling to PCB ground plane and heatsink for sustained operation at 85 °C ambient. |
Pinout & Package
Package: 32-lead, leadless 5 × 5 mm RoHS-compliant ceramic SMT package with alumina body, gold-over-nickel plating, and exposed ground paddle. MSL Level 3, peak reflow 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 7–12, 14, 16–20, 23–30 | N/C | No connection; may be tied to RF ground without performance impact - enhances grounding flexibility. |
| 3 | Vgg2 | Secondary gate bias input; +3 V nominal sets optimal transconductance and linearity. |
| 5 | RFIN | DC-coupled 50 Ω RF input - eliminates need for external DC blocking capacitor in baseband-coupled systems. |
| 13, 31, 32 | ACG3 / ACG2 / ACG1 | Low-frequency AC grounds - require bypass capacitors (e.g., 0.1 µF) to stabilize bias and suppress low-frequency oscillation. |
| 15 | Vgg1 | Primary gate bias input; adjustable from −2 V to 0 V to fine-tune Idd to 300 mA. |
| 22 | RFOUT & Vdd | Combined RF output and drain supply node - requires external RF choke or bias tee for simultaneous DC feed and RF extraction. |
| 6, 21 | Ground Paddle | Exposed thermal/RF ground pad - must be soldered to PCB ground plane with multiple vias for thermal dissipation and impedance control. |
Key Features
| Feature | Design Value |
|---|---|
| DC–15 GHz bandwidth | Enables single-amplifier coverage from baseband to Ku-band, eliminating band-switching complexity in wideband receivers and jammers. |
| Internal 50 Ω matching | Removes requirement for external matching networks, reducing BOM count, layout area, and tuning iterations in production designs. |
| ±1.4 dB gain flatness | Minimizes amplitude ripple across full bandwidth, critical for pulse fidelity in radar and modulation accuracy in VSAT uplinks. |
| Class 1A ESD rating | Requires strict handling per JESD22-A114; mandates grounded workstations and ionized air tools during assembly to prevent latent damage. |
| 27.3 °C/W thermal resistance | Supports continuous operation at full output power when mounted on 4-layer PCB with ≥8 thermal vias under ground paddle. |
Applications
| Military Electronic Warfare (EW) | Test & Measurement Instrumentation |
|---|---|
Use Scenario: Wideband jamming transmitter front-end operating from 2–12 GHz with fast frequency agility. IC Role / Device Role / Timing Role: Driver amplifier stage providing high linearity and gain before final power amplification. Use Value: +35 dBm IP3 ensures minimal intermodulation distortion across multi-tone jamming waveforms; DC coupling allows seamless baseband-to-RF signal injection. | Use Scenario: Signal generator output stage requiring flat gain and low distortion up to 15 GHz. IC Role / Device Role / Timing Role: Final output buffer amplifier delivering calibrated RF power into 50 Ω loads. Use Value: ±1.4 dB gain flatness eliminates need for real-time correction tables; internal 50 Ω match ensures repeatable VSWR < 1.3:1 across full band. |
| Ku-Band VSAT Uplink | Radar Pulse Amplification |
Use Scenario: Outdoor unit (ODU) transmit chain amplifying QPSK-modulated signals at 13.75–14.5 GHz. IC Role / Device Role / Timing Role: Linear driver amplifier preceding GaN final stage, maintaining EVM under back-off conditions. Use Value: +27.5 dBm P1dB provides >10 dB headroom for 16-QAM signals; 2.5 dB NF preserves SNR in cascaded receiver paths. | Use Scenario: Pulse compression radar transmitter amplifying short-duration (100 ns), high-PRF pulses at 8–12 GHz. IC Role / Device Role / Timing Role: Medium-power pulse amplifier with fast turn-on/turn-off response and minimal droop. Use Value: DC coupling enables sub-ns pulse edge fidelity; thermal design supports 10% duty cycle at full output without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar wideband power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC998LP5E | Higher frequency (DC–20 GHz), higher P1dB (+30 dBm), but requires dual supplies (+5 V & −2 V) and external matching. | Better suited for Ka-band test equipment; not drop-in due to different bias scheme and pinout. | Select when extending bandwidth beyond 15 GHz and accepting added design complexity. |
| QPA2211 | GaAs pHEMT MMIC, 0.1–20 GHz, +32 dBm P1dB, +42 dBm IP3, but larger 7 × 7 mm package and higher 500 mA supply current. | Preferred for higher-output radar drivers; incompatible pinout and thermal footprint. | Choose when >+28 dBm output and wider bandwidth are required, and board space permits larger package. |
Compared with HMC998LP5E and QPA2211, the HMC659LC5 offers the best balance of DC–15 GHz coverage, compact 5 × 5 mm footprint, single +8 V supply, and internal 50 Ω matching - making it optimal for space-constrained, cost-sensitive EW and instrumentation designs where 27.5 dBm output suffices.
Availability
HMC659LC5 is available at Aetrix Electronics and suitable for military electronic warfare systems, Ku-band satellite communications, radar pulse amplifiers, and automated test equipment requiring stable component supply across extended product lifecycles.
Supply support for HMC659LC5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global semiconductor leader specializing in high-performance analog, mixed-signal, and RF technologies for precision signal processing and connectivity.
The HMC659LC5 belongs to Analog Devices' legacy Hittite Microwave RF amplifier product line, engineered for wideband defense, aerospace, and instrumentation applications demanding high linearity, thermal stability, and DC-coupled operation.
FAQ
What is the recommended gate bias configuration for the HMC659LC5?
The HMC659LC5 requires two gate bias voltages: Vgg1 (pin 15) adjusted between −2 V and 0 V to set Idd = 300 mA, and Vgg2 (pin 3) fixed at +3 V for nominal operation. Vgg1 tuning compensates for process variation and temperature drift; Vgg2 stabilizes transconductance. Both must be supplied via low-noise, well-filtered sources to avoid gain ripple or oscillation.
Can the HMC659LC5 be used in DC-coupled applications?
Yes, the HMC659LC5 supports true DC-coupled operation: RFIN (pin 5) and RFOUT/Vdd (pin 22) are both DC-coupled, enabling baseband and low-frequency RF signal amplification down to 0 Hz. This eliminates external DC blocking capacitors and preserves phase integrity in pulsed and modulated waveforms below 10 MHz.
What thermal management is required for continuous operation of the HMC659LC5?
For continuous operation at full output power, the HMC659LC5 requires soldering its ground paddle (pins 6 and 21) to a solid 4-layer PCB ground plane with ≥8 thermal vias (0.3 mm diameter, spaced ≤1 mm apart), plus mounting to an external heatsink. At 85 °C ambient, derating begins above 3.3 W dissipation; junction temperature must stay ≤175 °C.
Is the HMC659LC5 pin-compatible with other Hittite 5 × 5 mm amplifiers?
No, the HMC659LC5 has a unique 32-pin arrangement optimized for its distributed architecture and dual-gate biasing. Pin functions such as ACG1/ACG2/ACG3 (pins 32/31/13) and combined RFOUT/Vdd (pin 22) differ from other Hittite 5 × 5 mm packages like the HMC441LC3 or HMC564LC4 - PCB redesign is required for substitution.
What is the ESD handling requirement for the HMC659LC5?
The HMC659LC5 is rated Class 1A per HBM (Human Body Model), meaning it can be damaged by discharges as low as 250 V. Handling requires grounded wrist straps, conductive foam storage, ionized air workstations, and ESD-safe tweezers. PCB assembly must occur in EPA-certified areas; no ungrounded personnel contact with pins or paddle is permitted before soldering.
117494-HMC659LC5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 0Hz ~ 15GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC659LC5
117494-HMC659LC5 FAQ
1.How can I place an order for 117494-HMC659LC5 through Aetrix?
Please submit a Request for Quotation (RFQ) for 117494-HMC659LC5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 117494-HMC659LC5 reliable?
The price and inventory of 117494-HMC659LC5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 117494-HMC659LC5 is usually 5 days.
3.What payment methods are accepted for 117494-HMC659LC5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 117494-HMC659LC5 transactions.
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4.How is shipping managed for 117494-HMC659LC5?
117494-HMC659LC5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 117494-HMC659LC5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 117494-HMC659LC5?
For technical support, including 117494-HMC659LC5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 117494-HMC659LC5 requirements.
6.How does Aetrix verify that 117494-HMC659LC5 is sourced from the original manufacturer or authorized distributors?
All 117494-HMC659LC5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 117494-HMC659LC5 meets industry standards.
7.What is the process for return or replacement of 117494-HMC659LC5?
All 117494-HMC659LC5 units undergo pre-shipment inspection (PSI). If there is an issue with 117494-HMC659LC5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 117494-HMC659LC5 part is unused and in its original packaging.
Return procedure for 117494-HMC659LC5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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