Analog Devices Inc. 117905-HMC618LP3

Overview

HMC618LP3 from Hittite Microwave Corporation is a GaAs pHEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier optimized for 1.2–2.2 GHz front-end receiver applications. It delivers 0.75 dB noise figure, 19 dB small-signal gain, and +36 dBm output IP3 at +5 V supply, with 50 Ω input/output matching and operation across cellular/3G/LTE/WiMAX/4G base station infrastructure.

For engineers reviewing the HMC618LP3 datasheet, HMC618LP3 pinout, HMC618LP3 application, or HMC618LP3 equivalent, this page provides verified electrical specifications, biasing flexibility (3–5 V), thermal performance data, package dimensions, and real-world use context for RF front-end design in BTS, repeaters, and public safety radios.

Technical Context

The HMC618LP3 employs a two-stage GaAs pHEMT architecture with externally adjustable bias via a single resistor (R_bias) on Pin 8, enabling precise control of supply current (47–118 mA) and trade-offs between noise figure, gain, and linearity. Its 16-lead 3×3 mm SMT package integrates an exposed ground paddle requiring direct PCB grounding for thermal and RF performance.

It operates over –40°C to +85°C ambient, supports dual supply rails (Vdd1/Vdd2), and maintains stable broadband performance across three frequency sub-bands (1200–1700 MHz, 1700–2000 MHz, 2000–2200 MHz), with measured gain variation as low as 0.008 dB/°C and input return loss ≥19.5 dB at +25°C.

Key Specifications

Pinout & Package

16-lead 3×3 mm surface-mount package with exposed copper ground paddle (MSL1, Sn/Pb finish for HMC618LP3). Requires soldering all ground leads and paddle to PCB RF ground plane using ≥6 thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise amplifier applications.

Compared with HMC618LP3, HMC617LP3E shifts usable bandwidth downward but retains mechanical compatibility, while HMC375LP3E offers legacy footprint support at the expense of noise and linearity-making HMC618LP3 the optimal choice for new 1.2–2.2 GHz infrastructure designs demanding best-in-class NF/OIP3 trade-off.

Availability

HMC618LP3 is available at Aetrix Electronics and suitable for cellular base station receivers, LTE femtocells, and public safety radio repeaters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for HMC618LP3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hittite Microwave Corporation (acquired by Analog Devices in 2014) specialized in high-performance RF, microwave, and millimeter-wave ICs for communications, defense, and test equipment markets.

The HMC618LP3 belongs to Hittite's GaAs pHEMT MMIC LNA product line, engineered specifically for wireless infrastructure front-end receivers demanding ultra-low noise, high linearity, and wideband 50 Ω matching in compact SMT packages.

FAQ

What is the absolute maximum drain voltage rating for the HMC618LP3?

The HMC618LP3 has an absolute maximum drain bias voltage (Vdd1/Vdd2) rating of +6 Vdc. Operation above this level risks permanent device damage. Recommended operating range is +3 V to +5 V, with typical bias configurations using 470 Ω (for +5 V) or 10 kΩ (for +3 V) external resistors on Pin 8 to set supply current. The HMC618LP3 datasheet specifies derating curves for continuous power dissipation above +85°C ambient.

Does the HMC618LP3 require external matching components at 50 Ω?

No, the HMC618LP3 features fully integrated 50 Ω input and output matching across its 1.2–2.2 GHz operating band. The device is DC-coupled on both RFIN (Pin 2) and RFOUT (Pin 11), eliminating the need for external DC blocking capacitors or impedance-matching networks in standard applications. External bypassing (1000 pF + 0.47 µF per Vdd pin) and R_bias on Pin 8 are the only required external components for basic operation of the HMC618LP3.

How does supply voltage affect noise figure and OIP3 in the HMC618LP3?

At +3 V operation (with 10 kΩ R_bias), the HMC618LP3 exhibits higher noise figure (0.9 dB typ.) and lower OIP3 (+28 dBm typ.) compared to +5 V operation (0.75 dB NF, +36 dBm OIP3). This reflects the fundamental trade-off between power consumption and RF performance. The HMC618LP3 datasheet provides detailed plots of NF and IP3 versus supply voltage at 1750 MHz and 2100 MHz, confirming monotonic improvement with increasing Vdd within the 3–5 V range.

Is the HMC618LP3 pin-compatible with any other Hittite LNAs?

Yes, the HMC618LP3 shares identical package dimensions, land pattern, and pinout with the HMC617LP3E (0.55–1.2 GHz LNA). This enables drop-in replacement in existing layouts when shifting frequency coverage upward, provided RF matching and biasing are re-verified. No other Hittite LNA-including HMC375LP3E or HMC382LP3E-shares this exact pin configuration, though they occupy the same 3×3 mm footprint.

What thermal management is required for continuous operation of the HMC618LP3?

The HMC618LP3 requires direct soldering of its exposed ground paddle and all ground pins (6, 10) to a multilayer PCB ground plane with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). With proper layout, it achieves 103.4 °C/W thermal resistance from channel to paddle. At +85°C ambient and +5 V operation, junction temperature remains below the 150°C absolute maximum when power dissipation stays within the derated limit (0.63 W at +85°C, decreasing 9.68 mW/°C above that). The HMC618LP3 evaluation board (117905-HMC618LP3E) includes thermal design guidelines.