Analog Devices Inc. 118038-HMC476SC70
- Part No.:
- 118038-HMC476SC70
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
118038-HMC476SC70.pdf
- Description:
- BOARD EVAL HMC476SC70E
- Quantity:
- Payment:

- Shipping:

Inventory:2,346
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Product details
Overview
The HMC476SC70 from Analog Devices is a SiGe HBT gain block MMIC amplifier operating from DC to 6 GHz, delivering 20 dB small-signal gain, +12 dBm P1dB output power, and +24 dBm OIP3 at 850 MHz with 35 mA supply current at +5 V. It serves as a cascadable 50 Ω RF/IF gain stage or LO/PA driver in wireless infrastructure transceivers.
For engineers reviewing the HMC476SC70 datasheet, HMC476SC70 pinout, HMC476SC70 application, or HMC476SC70 equivalent, key selection criteria include broadband gain flatness (±3 dB over DC–4 GHz), input/output return loss ≥20 dB up to 4 GHz, noise figure ≤2.5 dB at 0.5–4 GHz, and SC70 package compatibility with high-frequency PCB layout requirements.
Technical Context
This monolithic microwave integrated circuit uses a Darlington-configured SiGe HBT topology to achieve stable gain across temperature (0.008–0.012 dB/°C) and reduced process sensitivity. Its DC-coupled RFIN and bias-fed RFOUT enable flexible integration into multi-stage amplifiers without external bias tees.
The device operates from a single +5 V to +12 V supply, with internal biasing stabilized by an external 56 Ω resistor (at +5 V), supporting fixed-current operation (35 mA typ.) and enabling predictable RF performance across -40 °C to +85 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | DC to 6 GHz - supports wideband IF, RF, and LO signal paths without band switching. |
| Small-Signal Gain | 19 dB typ. (DC–2 GHz), 16 dB typ. (2–4 GHz), 12 dB typ. (4–6 GHz) - enables predictable cascaded gain budgeting. |
| P1dB Output Power | +12.0 dBm typ. (0.5–4 GHz) - sufficient to drive mixer LO ports or subsequent PA stages. |
| OIP3 | +24 dBm typ. (0.5–4 GHz, Pout = 0 dBm/tone) - ensures linearity for multi-carrier cellular/WiMAX signals. |
| Noise Figure | 2.5 dB typ. (0.5–4 GHz) - suitable as first-stage LNA or intermediate gain block in low-noise receiver chains. |
| Supply Current | 35 mA typ. at Vs = +5 V - enables low-power portable and battery-assisted RF modules. |
| Input Return Loss | ≥20 dB (DC–4 GHz) - simplifies matching network design and improves system VSWR stability. |
| Output Return Loss | ≥20 dB (DC–4 GHz) - allows direct connection to 50 Ω filters, mixers, or antennas without isolation. |
Pinout & Package
Package: SC70-6 (low-stress injection-molded plastic, Sn/Pb lead finish, MSL1, 2.0 × 1.25 × 0.9 mm body). Thermal resistance θJA = 129 °C/W; ESD rating: HBM Class 1A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | GND | RF and DC ground terminals - must be soldered directly to PCB ground plane with multiple vias for minimal inductance. |
| 3 | RFIN | DC-coupled RF input - requires external DC blocking capacitor; matched to 50 Ω for broadband insertion. |
| 6 | RFOUT | RF output and DC bias feed point - supplies Vcc to output stage; requires external DC blocking capacitor and RF choke/bias inductor. |
Key Features
| Feature | Design Value |
|---|---|
| Darlington SiGe HBT topology | Delivers gain stability of ≤0.012 dB/°C and reduced sensitivity to process variation across wafer lots. |
| Cascadable 50 Ω I/Os | Enables direct interstage connection without matching networks in multi-amplifier RF chains. |
| Single-supply operation (+5 V to +12 V) | Eliminates need for negative rails or complex bias sequencing in compact RF front-ends. |
| Integrated bias network support | External Rbias (e.g., 56 Ω at +5 V) provides temperature-stable ICQ, reducing calibration overhead. |
| Industry-standard SC70 footprint | Ensures compatibility with automated SMT assembly and existing reflow profiles (peak 235 °C). |
Applications
| Cellular Base Station Transceiver | WiMAX/WiBro Front-End |
|---|---|
Use Scenario: Intermediate frequency (IF) gain stage in 3G/4G macrocell BTS uplink path, operating at 190–220 MHz and 1.8–2.2 GHz bands. IC Role / Device Role / Timing Role: Fixed-gain RF amplifier providing +20 dB gain and +24 dBm OIP3 to maintain adjacent channel leakage ratio (ACLR) compliance. Use Value: Enables high linearity without active bias control, reducing BOM count and thermal drift in outdoor cabinet deployments. | Use Scenario: LO driver for dual-conversion WiMAX receivers (2.3–2.7 GHz) requiring stable gain and low phase noise contribution. IC Role / Device Role / Timing Role: Cascadable gain block driving mixer LO port with +12 dBm output and <2.5 dB NF to preserve receiver sensitivity. Use Value: Eliminates need for discrete bias networks while maintaining >20 dB input/output return loss across full band. |
| CATV Optical Node Amplifier | Test Equipment Signal Generator Stage |
Use Scenario: Upstream RF gain block in 5–42 MHz return-path amplifiers for hybrid fiber-coax (HFC) networks. IC Role / Device Role / Timing Role: Low-noise, DC-coupled amplifier supporting broadband return-path signals with minimal group delay variation. Use Value: Delivers flat gain (±1 dB) from DC to 60 MHz and handles burst-mode upstream traffic without saturation. | Use Scenario: Output buffer in benchtop RF signal generators covering 10 MHz–6 GHz, where spectral purity and output level accuracy are critical. IC Role / Device Role / Timing Role: Final-stage driver ensuring consistent +12 dBm output with <0.5 dB amplitude flatness and low harmonic distortion. Use Value: Reduces calibration complexity via stable gain vs. temperature (0.01 dB/°C) and eliminates warm-up drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar gain block applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC477SC70 | Higher gain (22 dB typ. at 2 GHz), +13 dBm P1dB, same SC70 package and pinout. | Better suited for low-input-power scenarios where maximum gain is prioritized over power efficiency. | Select HMC477SC70 when system-level gain budget requires >20 dB per stage and supply current ≤40 mA is acceptable. |
| QPL9057 | 50 Ω matched GaAs pHEMT gain block, 0.05–6 GHz, +15.5 dB gain, +19 dBm OIP3, 3.3 V operation. | Lower voltage operation and higher integration (integrated bias network), but lower OIP3 and narrower temp range (-30 to +85 °C). | Choose QPL9057 for space-constrained 3.3 V systems where simplified biasing outweighs linearity trade-offs. |
Compared with HMC476SC70, HMC477SC70 offers higher gain and output power at marginally increased current, while QPL9057 trades linearity and temperature range for lower-voltage operation and integrated bias - making HMC476SC70 optimal for 5 V, high-linearity, wide-temperature industrial RF designs.
Availability
HMC476SC70 is available at Aetrix Electronics and suitable for cellular base station transceivers, WiMAX front-ends, and CATV optical node amplifiers requiring stable component supply, consistent RF performance, and long-term lifecycle support.
Supply support for HMC476SC70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices, Inc. is a global semiconductor leader specializing in high-performance analog, mixed-signal, and RF technologies for precision signal processing.
The HMC476SC70 belongs to the Hittite Microwave (acquired by Analog Devices) MMIC gain block product line, engineered for broadband RF infrastructure applications demanding cascadable 50 Ω performance, low noise, and high linearity from DC to 6 GHz.
FAQ
What is the recommended supply voltage and bias resistor for HMC476SC70 in a +5 V application?
The HMC476SC70 is specified for operation from +5 V to +12 V. At +5 V, a 56 Ω external bias resistor (Rbias) is recommended to set ICQ ≈ 35 mA. This value ensures stable quiescent current across temperature and aligns with the typical gain and linearity performance shown in the datasheet. The resistor must be rated for ≥1/8 W and placed close to Pin 6 (RFOUT/Vcc) to minimize parasitic inductance.
Does HMC476SC70 require external DC blocking capacitors, and where are they needed?
Yes, HMC476SC70 requires external DC blocking capacitors on both RFIN (Pin 3) and RFOUT (Pin 6). Pin 3 is DC-coupled but must be AC-coupled to preceding stages using a capacitor (e.g., 100 pF at >1 GHz); Pin 6 carries DC bias and RF output simultaneously, so a series capacitor (e.g., 100 pF) is mandatory before connecting to the next stage. These capacitors prevent DC level mismatches and ensure proper bias isolation.
What is the thermal resistance and maximum junction temperature specification for HMC476SC70?
The HMC476SC70 has a junction-to-lead thermal resistance (θJL) of 129 °C/W. Its absolute maximum junction temperature is 150 °C, with continuous power dissipation limited to 0.504 W at TA = 85 °C (derating 7.75 mW/°C above that). Proper PCB layout - including direct grounding of Pins 1, 2, 4, 5 to a solid ground plane with multiple thermal vias - is essential to maintain safe operating temperature under +12 dBm RF output conditions.
Is HMC476SC70 pin-compatible with HMC476SC70E, and what is the key difference?
Yes, HMC476SC70 and HMC476SC70E share identical pinout, electrical specifications, and SC70-6 mechanical footprint. The sole difference is RoHS compliance: HMC476SC70E uses 100% matte tin lead finish and supports peak reflow up to 260 °C, whereas HMC476SC70 uses Sn/Pb finish with 235 °C max reflow. Both parts are drop-in replacements in compatible assembly processes.
Can HMC476SC70 be used as a low-noise amplifier (LNA) in receiver front-ends?
Yes, the HMC476SC70 can serve as an LNA in receiver front-ends where moderate noise figure is acceptable. With a typical noise figure of 2.5 dB (0.5–4 GHz) and input return loss ≥20 dB, it provides usable sensitivity enhancement ahead of mixers - especially in IF or secondary RF gain positions. However, for ultra-low-noise applications (<1.5 dB NF), dedicated LNAs like the HMC517LC4 are preferred.
118038-HMC476SC70 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 0Hz ~ 6GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC476SC70
118038-HMC476SC70 FAQ
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7.What is the process for return or replacement of 118038-HMC476SC70?
All 118038-HMC476SC70 units undergo pre-shipment inspection (PSI). If there is an issue with 118038-HMC476SC70, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 118038-HMC476SC70 part is unused and in its original packaging.
Return procedure for 118038-HMC476SC70:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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