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Analog Devices Inc. 118039-HMC478SC70

Part No.:
118039-HMC478SC70
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix118039-HMC478SC70.pdf
Description:
BOARD EVAL AMP MMIC HMC478
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,088

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Product details

Overview

HMC478SC70 from Analog Devices is a SiGe HBT gain block MMIC amplifier operating from DC to 4 GHz, delivering 23 dB small-signal gain, +17 dBm P1dB output power, and +31 dBm output IP3 at 850 MHz with 62 mA supply current at +5 V. It serves as a cascadable 50 Ω RF/IF gain stage or LO/PA driver in wireless infrastructure transceivers.

For engineers reviewing the HMC478SC70 datasheet, HMC478SC70 pinout, HMC478SC70 application, or HMC478SC70 equivalent, key selection criteria include its SC70 package compatibility, single-supply operation (5–8 V), broadband return loss (>15 dB up to 3 GHz), and temperature-stable Darlington bias architecture requiring only one external resistor.

Technical Context

The HMC478SC70 employs a SiGe HBT Darlington topology that minimizes process variation sensitivity and ensures ±0.02 dB/°C gain drift across DC–4 GHz. Its fully DC-coupled RFIN and RFOUT pins require external blocking capacitors, while RFOUT also supplies DC bias to the output stage.

Input and output are internally matched to 50 Ω, enabling direct cascade without matching networks. Reverse isolation exceeds 20 dB across full bandwidth, supporting stable multi-stage designs in frequency-agile transmitters and test equipment front-ends.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range DC to 4 GHz - supports baseband IF, cellular bands (850/1900/2200 MHz), WiMAX, and microwave radio links without band switching.
Small-Signal Gain 23 dB typical at 850 MHz - enables single-stage amplification in receiver LNA or transmitter driver chains with minimal cascading.
P1dB Output Power +17 dBm at 0.5–2.0 GHz - sufficient to drive medium-power PA stages or mixers in 3G/4G base stations.
Output IP3 +31 dBm at 850 MHz - ensures low intermodulation distortion in multi-carrier FDD systems like LTE and WiBro.
Noise Figure 2.5 dB at DC–3 GHz - maintains SNR integrity in sensitive receiver front-ends before downconversion.
Supply Current 62 mA at Vs = +5 V, Rbias = 18 Ω - enables low-power biasing with standard SMT resistors and no active regulation needed.
Input/Output Return Loss ≥15 dB up to 3 GHz - eliminates need for external matching components in 50 Ω PCB layouts.

Pinout & Package

Package: SC70-6 (Low Stress Injection Molded Plastic, Sn/Pb lead finish, MSL1, 2.0 × 1.25 × 0.9 mm). All ground pins must be soldered directly to RF ground plane per RF design best practices.

Pin/Terminal Circuit Role Design Meaning
1, 2, 4, 5 GND RF and DC ground connections - must be vias to solid ground plane; critical for stability and thermal dissipation.
3 RFIN DC-coupled RF input - requires external DC-blocking capacitor; no internal bias tee.
6 RFOUT RF output + DC bias feed - supplies Vcc to output transistor; requires external DC-blocking capacitor and bias choke/inductor.

Key Features

Feature Design Value
Darlington bias topology Reduces gain drift to ≤0.02 dB/°C and eliminates need for temperature-compensated bias networks.
Cascadable 50 Ω I/Os Enables plug-and-play integration into multi-stage RF chains without impedance-matching components.
Single positive supply (5–8 V) Supports common system rails; bias resistor value scales linearly (e.g., 18 Ω @ 5 V, 67 Ω @ 8 V).
High reverse isolation (>20 dB) Prevents oscillator pulling and load-pull instability in feedback-sensitive transmitter architectures.
ESD robustness (HBM Class 1C) Allows safe handling during prototyping and rework without special ESD workstations.

Applications

Cellular Base Station Receiver WiMAX Transmitter Driver

Use Scenario: Amplifying weak UMTS/LTE signals after band-select filtering and before downconversion.

IC Role / Device Role / Timing Role: Cascadable 50 Ω IF gain block providing 23 dB gain and 2.5 dB noise figure at 1900 MHz.

Use Value: Maintains system NF below 3.5 dB while enabling high dynamic range via +31 dBm IP3.

Use Scenario: Boosting modulated OFDM signals prior to final PA in fixed wireless access units.

IC Role / Device Role / Timing Role: LO/PA driver delivering +17 dBm P1dB into 50 Ω load at 2.5 GHz.

Use Value: Eliminates need for discrete bias networks and reduces BOM count by integrating stable gain topology.

CATV Node Amplifier Stage Microwave Radio Test Equipment

Use Scenario: Compensating cable loss in headend distribution amplifiers operating up to 1 GHz.

IC Role / Device Role / Timing Role: Broadband gain block with flat 20–24 dB response from DC to 1 GHz.

Use Value: Delivers consistent gain over temperature (±0.2 dB from –40°C to +85°C) without recalibration.

Use Scenario: Signal conditioning in vector network analyzer receiver paths and signal generator outputs.

IC Role / Device Role / Timing Role: Calibration-grade gain element with <0.02 dB/°C drift and >20 dB reverse isolation.

Use Value: Enables traceable amplitude accuracy across lab-grade instruments without thermal drift compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar gain block applications.

Alternative Part Technical Difference Application Difference Selection Advice
QPL9057 Higher gain (26 dB), wider bandwidth (DC–6 GHz), but higher NF (3.0 dB) and lower IP3 (+28 dBm). Better suited for wideband test equipment where bandwidth >4 GHz is required; less optimal for noise-critical receivers. Choose QPL9057 when extending beyond 4 GHz or needing higher small-signal gain; verify thermal derating at 85°C ambient.
ERA-5SM+ Lower gain (18 dB), narrower bandwidth (DC–3 GHz), GaAs pHEMT process, no integrated Darlington bias. Requires external bias network and temperature compensation; better for cost-sensitive, non-temperature-stable designs. Choose ERA-5SM+ for legacy GaAs-based designs with existing bias circuitry; avoid in thermally varying environments.

Compared with QPL9057 and ERA-5SM+, the HMC478SC70 offers superior gain stability over temperature and optimized IP3-to-NF trade-off for 50 Ω infrastructure applications-making it preferred for cellular and fixed wireless where thermal drift and linearity are co-constrained.

Availability

HMC478SC70 is available at Aetrix Electronics and suitable for cellular base station receivers, WiMAX transmitter drivers, CATV node amplifiers, and microwave radio test equipment requiring stable component supply, consistent RF performance, and long-term obsolescence management.

Supply support for HMC478SC70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and aerospace markets with precision signal processing solutions.

The HMC478SC70 belongs to the Hittite Microwave (acquired by Analog Devices) RF gain block product line, designed specifically for broadband, temperature-stable, cascadable amplification in wireless infrastructure and instrumentation.

FAQ

What is the recommended bias resistor value for HMC478SC70 at +5 V supply?

The recommended bias resistor value for HMC478SC70 at +5 V supply is 18 Ω, calculated to set collector current at 62 mA (ICQ) using Rbias = (Vs − VCC) / ICQ. This value ensures stable operation across temperature and matches the typical test condition used in the HMC478SC70 datasheet for gain, P1dB, and IP3 characterization.

Does HMC478SC70 require external DC blocking capacitors?

Yes, HMC478SC70 requires external DC blocking capacitors on both RFIN (Pin 3) and RFOUT (Pin 6), as both ports are DC-coupled. The datasheet specifies off-chip capacitors to prevent DC path disruption and ensure proper biasing of adjacent stages. Typical values range from 100 pF to 0.01 µF depending on frequency band.

What is the maximum operating temperature for HMC478SC70?

The maximum operating temperature for HMC478SC70 is +85 °C, with guaranteed performance over the full –40 °C to +85 °C range. Junction temperature must not exceed 150 °C; thermal resistance (junction-to-lead) is 111.5 °C/W, so PCB layout must include adequate copper area and vias to maintain safe junction temperatures at 62 mA ICQ.

Is HMC478SC70 pin-compatible with HMC478SC70E?

Yes, HMC478SC70 and HMC478SC70E share identical pinout, electrical specifications, and SC70-6 footprint. The only difference is RoHS compliance: HMC478SC70E uses 100% matte tin lead finish and has a higher MSL1 peak reflow temperature (260 °C vs. 235 °C), making it compatible with lead-free assembly processes without redesign.

Can HMC478SC70 operate from a +8 V supply?

Yes, HMC478SC70 supports single-supply operation from +5 V to +8 V. At +8 V, the recommended bias resistor increases to 67 Ω to maintain ~62 mA ICQ, and P1dB improves to +19 dBm (typical) while gain remains stable. Absolute maximum collector bias voltage is +6 Vdc, but the device uses an internal regulator; external Vs up to +8 V is permitted per the HMC478SC70 datasheet.

118039-HMC478SC70 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Bag
Product Status:
Obsolete
Type:
Amplifier
Frequency:
0Hz ~ 4GHz
Contents:
Board(s)
Utilized IC / Part:
HMC478SC70

118039-HMC478SC70 FAQ

1.How can I place an order for 118039-HMC478SC70 through Aetrix?

Please submit a Request for Quotation (RFQ) for 118039-HMC478SC70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 118039-HMC478SC70 reliable?

The price and inventory of 118039-HMC478SC70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 118039-HMC478SC70 is usually 5 days.

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5.How can I obtain technical support or documentation for 118039-HMC478SC70?

For technical support, including 118039-HMC478SC70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 118039-HMC478SC70 requirements.

6.How does Aetrix verify that 118039-HMC478SC70 is sourced from the original manufacturer or authorized distributors?

All 118039-HMC478SC70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 118039-HMC478SC70 meets industry standards.

7.What is the process for return or replacement of 118039-HMC478SC70?

All 118039-HMC478SC70 units undergo pre-shipment inspection (PSI). If there is an issue with 118039-HMC478SC70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 118039-HMC478SC70 part is unused and in its original packaging.

Return procedure for 118039-HMC478SC70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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