Analog Devices Inc. 121703-HMC758LP3

Overview

HMC758LP3 from Hittite Microwave Corporation is a GaAs pHEMT MMIC low-noise amplifier optimized for 700–2200 MHz front-end receiver applications. It delivers 1.7 dB noise figure, 22 dB gain, +37 dBm output IP3, and operates from a single +3V to +5V supply in a 16-lead 3×3 mm SMT package. It is used in LTE/4G basestation receivers requiring high linearity and low noise.

For engineers reviewing the HMC758LP3 datasheet, HMC758LP3 pinout, HMC758LP3 application, or HMC758LP3 equivalent, key selection criteria include noise figure vs. frequency, bias-adjustable supply current (80–260 mA), 50 Ω matched I/O, thermal resistance (50 °C/W), and MSL1 reflow compatibility.

Technical Context

The HMC758LP3 employs a two-stage GaAs pHEMT architecture with externally adjustable bias via BIAS1 and BIAS2 pins, enabling independent control of first- and second-stage DC currents using external resistors (e.g., R1 = 390 Ω, R2 = 560 Ω). This allows precise trade-off tuning between gain, noise figure, and linearity across voltage and temperature.

It features DC-coupled RF input (Pin 2) and output (Pin 11), requiring off-chip DC blocking capacitors. All ground leads and the exposed paddle must be soldered to PCB RF ground per RF layout best practices, with thermal dissipation managed via 50 °C/W channel-to-ground paddle thermal resistance.

Key Specifications

Pinout & Package

16-lead 3×3 mm SMT package with exposed ground paddle; RoHS-compliant Sn/Pb finish (HMC758LP3) or 100% matte Sn (HMC758LP3E); MSL1 rating; max reflow 235 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise amplifier applications.

Compared with HMC758LP3, the HMC758LP3E offers identical RF performance with RoHS compliance, while the QPL9057 targets higher frequencies with lower noise but lacks coverage below 2.7 GHz-making it unsuitable for 700–2200 MHz LTE/WiMAX use cases.

Availability

HMC758LP3 is available at Aetrix Electronics and suitable for cellular infrastructure, WiMAX access points, and test & measurement equipment requiring stable component supply and guaranteed long-term availability.

Supply support for HMC758LP3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hittite Microwave Corporation was a U.S.-based RF/microwave semiconductor company specializing in high-performance analog ICs for wireless infrastructure, defense, and test equipment before its acquisition by Analog Devices in 2014.

The HMC758LP3 belongs to Hittite's GaAs pHEMT MMIC LNA product line, designed specifically for high-linearity, low-noise front-end receiver applications in 700–2200 MHz cellular and broadband wireless systems.

FAQ

What is the recommended bias configuration for HMC758LP3 to achieve optimal noise figure?

The HMC758LP3 achieves its specified 1.7 dB noise figure at +5 V with R1 = 390 Ω and R2 = 560 Ω, yielding 227 mA supply current. Reducing bias lowers noise figure slightly but sacrifices gain and linearity; increasing bias improves IP3 at the cost of higher NF. The datasheet confirms this configuration as the reference for all typical specifications including NF, gain, and OIP3.

Does HMC758LP3 require external matching components at RF input and output?

No, the HMC758LP3 features internally matched 50 Ω input and output impedances across 700–2200 MHz. Only external DC blocking capacitors are required on RFIN (Pin 2) and RFOUT (Pin 11); no additional matching networks are needed for nominal operation, reducing bill-of-materials and layout complexity.

What is the maximum allowable RF input power for HMC758LP3?

The absolute maximum RF input power for HMC758LP3 is +5 dBm when Vdd = +5 V, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the GaAs pHEMT transistors, especially during hot insertion or transient overdrive events in front-end receiver paths.

Can HMC758LP3 operate from a +3.3 V supply, and what performance changes occur?

Yes, HMC758LP3 operates from +3.3 V. At this voltage with R1/R2 = 390/560 Ω, supply current drops to ~122 mA, resulting in ~19.4 dB gain, ~1.8 dB noise figure, and ~+35 dBm OIP3 - a balanced trade-off for lower-power applications where thermal headroom is constrained.

Is HMC758LP3 pin-compatible with HMC758LP3E?

Yes, HMC758LP3 and HMC758LP3E share identical pinout, package dimensions (3×3 mm), and electrical specifications. The only difference is lead finish: Sn/Pb for HMC758LP3 and 100% matte Sn for HMC758LP3E. Both are MSL1-rated and require no PCB layout changes for substitution.