Analog Devices Inc. 122782-HMC566LP4E

Overview

HMC566LP4E from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT MMIC low-noise amplifier operating from 28 to 36 GHz, delivering 21 dB small-signal gain, 2.8 dB noise figure, and +24 dBm output IP3 at +3 V supply. It serves as the front-end LNA in millimeter-wave wireless infrastructure and test equipment where high linearity and low noise are critical.

For engineers reviewing the HMC566LP4E datasheet, HMC566LP4E pinout, HMC566LP4E application, or HMC566LP4E equivalent, key selection criteria include its 28–36 GHz bandwidth, self-biased +3 V operation, DC-blocked 50 Ω RF I/Os, 4×4 mm QFN package, and suitability for point-to-point radios and VSAT terminals.

Technical Context

The HMC566LP4E integrates a monolithic GaAs pHEMT amplifier core with on-die biasing, enabling stable operation across –40°C to +85°C without external bias networks. Its architecture supports broadband 50 Ω input/output matching and exhibits <0.03 dB/°C gain variation over temperature.

DC blocking capacitors are integrated at RFIN and RFOUT, eliminating external AC coupling components. Four independent Vdd pins (Vdd1–Vdd4) allow localized decoupling using 100 pF, 10 nF, and 4.7 µF capacitors per supply rail - a design requirement confirmed in the application circuit.

Key Specifications

Pinout & Package

The HMC566LP4E uses a RoHS-compliant 24-lead 4×4 mm QFN package with an exposed ground paddle. All ground leads (pins 1, 2, 4–7, 12–15, 17–19, 24) and the paddle must be soldered to PCB RF ground per Hittite's land pattern guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise amplifier applications.

Compared with HMC566 (die) and QPL9547, the HMC566LP4E uniquely combines full 28–36 GHz coverage, +24 dBm OIP3, and surface-mount readiness - making it the preferred choice for production-grade E-band radios and test instrumentation requiring guaranteed performance and manufacturability.

Availability

HMC566LP4E is available at Aetrix Electronics and suitable for point-to-point radios, VSAT terminals, and millimeter-wave test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HMC566LP4E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for defense, communications, and instrumentation markets.

The HMC566LP4E belongs to Hittite's legacy MMIC amplifier family, designed specifically for E-band wireless infrastructure and precision test equipment demanding ultra-low noise and high linearity above 24 GHz.

FAQ

What is the operating frequency range of the HMC566LP4E?

The HMC566LP4E operates from 28 to 36 GHz with fully characterized performance across this band, including gain, noise figure, and IP3. Data sheets specify three sub-bands (28–31.5 GHz, 31.5–33.5 GHz, and 33.5–36 GHz), each with defined min/typ/max values. This makes the HMC566LP4E suitable for E-band applications such as 5G fixed wireless access and satellite uplinks where full 36 GHz coverage is required.

Does the HMC566LP4E require external biasing components?

No, the HMC566LP4E is self-biased and operates from a single +3 V supply applied to pins Vdd1–Vdd4. External bypass capacitors (100 pF, 10 nF, and 4.7 µF per supply pin) are required for stability, but no gate bias resistors, current sources, or negative voltage rails are needed. This simplifies design and reduces footprint compared to discrete bias solutions - a key advantage of the HMC566LP4E in compact RF modules.

What is the recommended PCB layout for the HMC566LP4E?

Hittite's application note specifies that all ground leads (pins 1, 2, 4–7, 12–15, 17–19, 24) and the exposed ground paddle must be soldered directly to a solid RF ground plane using multiple thermal vias. Signal traces must be 50 Ω microstrip, and the evaluation board (P/N 122780) uses Rogers 4350 or Arlon 25 FR material. Proper grounding is critical for the HMC566LP4E to achieve its specified 2.8 dB noise figure and 21 dB gain.

Is the HMC566LP4E RoHS compliant and lead-free?

Yes, the HMC566LP4E uses RoHS-compliant low-stress injection-molded plastic and 100% matte tin (Sn) lead finish. Its package marking "H566" and maximum peak reflow temperature of 260 °C confirm compatibility with standard lead-free reflow profiles. This RoHS compliance is documented in the official package information sheet for the HMC566LP4E and verified through Analog Devices' product change notifications.

What is the absolute maximum RF input power for the HMC566LP4E?

The absolute maximum RF input power for the HMC566LP4E is +5 dBm when Vdd = +3 Vdc, as stated in the Absolute Maximum Ratings table. Exceeding this level risks permanent damage to the GaAs pHEMT transistors. For reliable operation, input power should be kept below the P1dB compression point (11–12 dBm typical), ensuring the HMC566LP4E remains in its linear region during normal use.