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Analog Devices Inc. 122789-HMC504LC4B

Part No.:
122789-HMC504LC4B
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix122789-HMC504LC4B.pdf
Description:
EVAL BOARD HMC504LC4B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,772

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Product details

Overview

HMC504LC4B from Analog Devices is a GaAs HEMT MMIC low-noise amplifier operating from 14 to 27 GHz, delivering 19 dB small-signal gain, 2.2 dB noise figure at 20 GHz, +17 dBm P1dB output power, and +26 dBm output IP3 while drawing 90 mA from a +4 V supply. It is DC-blocked and internally 50 Ω matched at input and output, enabling direct integration into microwave radio front-ends.

For engineers reviewing the HMC504LC4B datasheet, HMC504LC4B pinout, HMC504LC4B application, or HMC504LC4B equivalent, key selection criteria include its wideband LNA performance across Ka-band, thermal stability over –40°C to +85°C, gate bias control (Vgg = –1.7 to 0 V), exposed paddle thermal management, and compatibility with high-frequency PCB layouts requiring 2.92 mm connectors and RF-grade substrates.

Technical Context

The HMC504LC4B employs a monolithic GaAs HEMT process to achieve broadband low-noise amplification without external matching networks. Its internal 50 Ω terminations eliminate discrete input/output matching components, and the DC-blocked I/Os simplify system-level integration in transmit/receive chains.

It operates with fixed +4 V drain supply and adjustable gate voltage (Vgg) to set quiescent current at 90 mA. The exposed metal paddle provides a low-thermal-resistance path (50 °C/W) to ground, supporting continuous operation up to +85 °C ambient with proper heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency Range14–27 GHz - fully specified operation across Ka-band for point-to-point and VSAT systems
Small-Signal Gain19 dB typ. @ 20 GHz - sufficient gain to drive mixers without cascading stages
Noise Figure2.2 dB typ. @ 20 GHz - enables high receiver sensitivity in low-SNR environments
P1dB Output Power+17 dBm - supports use as LO driver for balanced or image-reject mixers
Output IP3+26 dBm - provides strong linearity for multi-carrier or high-order modulation signals
Supply Current90 mA @ +4 V - defines power budget for compact microwave modules
Input/Output Impedance50 Ω matched - eliminates need for external matching, reducing board area and loss

Pinout & Package

Package: 24-terminal ceramic leadless chip carrier (LCC), 4×4 mm body (16 mm²), alumina substrate, gold-over-nickel finish, MSL3 rating, exposed thermal paddle on bottom.

Pin/TerminalCircuit RoleDesign Meaning
1–3, 5–8, 11–16, 18, 19, 24GNDRF/DC ground terminals; must be soldered to top-layer ground plane and connected via multiple vias to internal ground plane
4RFINAC-coupled 50 Ω matched RF input - requires no external DC blocking or matching
17RFOUTAC-coupled 50 Ω matched RF output - directly interfaces with next-stage mixer or filter
20VggGate bias control terminal - external voltage adjustment (–1.7 to 0 V) sets Idd = 90 mA
21Vdd+4 V drain supply input - requires local decoupling (C5/C6 = 4.7 µF tantalum)

Key Features

FeatureDesign Value
Internally 50 Ω matched I/OEliminates external matching networks, reducing component count and insertion loss in Ka-band layouts
DC-blocked RF portsEnables direct connection to AC-coupled signal paths without additional capacitors
Exposed thermal paddleProvides 50 °C/W channel-to-ground thermal resistance, supporting reliable operation at +85 °C ambient
Wide operating temperature rangeSpecified from –40 °C to +85 °C - suitable for outdoor microwave radios and space-qualified subsystems
ESD robustnessClass 1A HBM rating - ensures handling survivability during assembly without special ESD tooling

Applications

Point-to-Point RadiosTest Instrumentation

Use Scenario: High-capacity licensed microwave links operating in 23–26 GHz bands requiring stable low-noise receive chain performance.

IC Role / Device Role / Timing Role: Low-noise amplifier in RF front-end, placed after antenna duplexer and before downconversion mixer.

Use Value: 2.2 dB NF and 19 dB gain enable >100 dBm system sensitivity, meeting ETSI Class 4 link budget requirements.

Use Scenario: Signal source calibration and spectrum analyzer front-end extension modules covering 14–27 GHz.

IC Role / Device Role / Timing Role: Pre-amplifier stage to boost weak test signals above analyzer noise floor without adding distortion.

Use Value: +26 dBm OIP3 and flat gain response ensure accurate amplitude and intermodulation measurements across full band.

Military & Space CommunicationsVSAT Terminals

Use Scenario: Secure SATCOM transceivers deployed in airborne or ground-mobile platforms with extreme environmental cycling.

IC Role / Device Role / Timing Role: Receive-path LNA in ruggedized T/R module, operating under –40 °C to +85 °C with minimal gain drift.

Use Value: Gain variation ≤0.018 dB/°C and qualified ceramic package support MIL-STD-810H shock/vibe compliance.

Use Scenario: Consumer and enterprise satellite internet terminals requiring compact, high-yield RF front-end assembly.

IC Role / Device Role / Timing Role: First-stage LNA in Ku/Ka-band feedhorn assembly, interfacing with patch antenna and downconverter IC.

Use Value: 4×4 mm LCC footprint and 50 Ω I/O reduce layout complexity and improve production yield vs. bare-die alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
HMC-ALH476Dice version of same core design; no package, no exposed paddle, requires custom die attach and wirebondingSuitable only for hybrid or multichip module integration; not for SMT assemblySelect HMC-ALH476 only when designing custom MMIC-based assemblies with controlled thermal interface and RF probing capability
Qorvo QPL9547SiGe process; 15–25 GHz range; 18 dB gain; 2.5 dB NF; +16 dBm P1dB; 3×3 mm QFN packageLower frequency coverage and slightly degraded noise/power; optimized for cost-sensitive commercial radiosChoose QPL9547 for non-military 5G backhaul where size and procurement simplicity outweigh Ka-band margin

Compared with HMC504LC4B, the HMC-ALH476 offers identical RF performance but demands advanced packaging expertise, while the QPL9547 trades 2 GHz bandwidth and 0.3 dB NF for lower cost and smaller footprint in commercial deployments below 25 GHz.

Availability

HMC504LC4B is available at Aetrix Electronics and suitable for point-to-point radios, military communications systems, and test instrumentation requiring stable component supply, traceable lot history, and long-term obsolescence management.

Supply support for HMC504LC4B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF technologies, serving aerospace, defense, communications, and industrial markets with precision signal processing solutions.

The HMC504LC4B belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for Ka-band infrastructure applications demanding ultra-low noise, high linearity, and ruggedized SMT packaging.

FAQ

What is the recommended gate bias voltage range for stable operation of the HMC504LC4B?

The HMC504LC4B requires gate bias voltage (Vgg) between –1.7 V and 0 V to achieve the specified 90 mA supply current at +4 V drain voltage. Typical Vgg is –0.3 V. Operation outside this range risks gain instability or device damage. Always verify Idd with a current probe during prototype tuning, and refer to the "MMIC Amplifier Biasing Procedure" application note for step-by-step setup guidance specific to HMC504LC4B.

Does the HMC504LC4B require external input or output matching components?

No, the HMC504LC4B does not require external input or output matching components. Its RF ports are internally DC-blocked and matched to 50 Ω across 14–27 GHz, as confirmed by S-parameter data in the official datasheet. This eliminates discrete matching networks, reduces insertion loss, and simplifies PCB layout-critical for Ka-band designs where parasitic effects dominate. External DC blocking remains unnecessary unless system-level DC coupling is required elsewhere in the signal chain.

How should the exposed thermal paddle of the HMC504LC4B be connected on the PCB?

The exposed thermal paddle on the bottom of the HMC504LC4B must be soldered directly to a solid copper ground plane using a grid of ≥9 thermal vias (0.3 mm diameter, spaced ≤0.8 mm apart). These vias must connect to inner and bottom ground layers to achieve ≤2.5 °C/W effective thermal resistance. Inadequate paddle connection causes junction temperature rise beyond 180 °C, triggering permanent degradation. Evaluation PCB 122789 demonstrates the validated footprint and stencil design required for HMC504LC4B.

Can the HMC504LC4B be used as a local oscillator driver in mixer applications?

Yes, the HMC504LC4B is explicitly qualified as an LO driver for balanced, I/Q, and image-reject mixers due to its +17 dBm P1dB output power and +26 dBm output IP3. At 21 GHz, it delivers sufficient saturated power and harmonic suppression to drive passive or active mixers without compression-induced distortion. Its 50 Ω matched output ensures minimal reflection into sensitive LO ports, preserving mixer conversion loss and port isolation-key for HMC504LC4B deployment in high-performance transceivers.

What is the maximum RF input power the HMC504LC4B can tolerate without damage?

The absolute maximum RF input power for the HMC504LC4B is +6 dBm, per the Absolute Maximum Ratings table. Exceeding this level-even briefly-risks permanent gate oxide damage or HEMT channel degradation. For safe operation, limit input power to ≤–5 dBm during normal amplification, and use external attenuators or limiter diodes if transient overdrive is possible. This specification applies regardless of bias condition or temperature, and is independent of the +4.5 V drain voltage limit.

122789-HMC504LC4B Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Amplifier
Frequency:
14GHz ~ 27GHz
Contents:
Board(s)
Utilized IC / Part:
HMC504LC4B

122789-HMC504LC4B FAQ

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All 122789-HMC504LC4B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 122789-HMC504LC4B meets industry standards.

7.What is the process for return or replacement of 122789-HMC504LC4B?

All 122789-HMC504LC4B units undergo pre-shipment inspection (PSI). If there is an issue with 122789-HMC504LC4B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 122789-HMC504LC4B part is unused and in its original packaging.

Return procedure for 122789-HMC504LC4B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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