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Analog Devices Inc. 125658-HMC686LP4E
- Part No.:
- 125658-HMC686LP4E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
125658-HMC686LP4E.pdf
- Description:
- EVAL BOARD HMC686LP4E PCB
- Quantity:
- Payment:
- Shipping:
Inventory:2,598
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Product details
Overview
HMC686LP4E from Analog Devices (formerly Hittite Microwave) is a BiCMOS double-balanced mixer with integrated LO amplifier, designed for RF downconversion and upconversion in cellular infrastructure. It operates across 0.7–1.1 GHz (high-side LO) and 1.4–1.5 GHz (low-side LO), delivers 7.5 dB typical conversion loss, +34 dBm input IP3, and supports DC–500 MHz IF bandwidth. It is deployed in LTE base station receivers and transmitters requiring high linearity and wide dynamic range.
For engineers reviewing the HMC686LP4E datasheet, HMC686LP4E pinout, HMC686LP4E application, or HMC686LP4E equivalent, key selection criteria include its dual-band LO optimization (0.7–1.1 GHz high-side / 1.4–1.5 GHz low-side), adjustable G_BIAS for trade-off between conversion gain and IP3, integrated LO amplifier eliminating external driver stages, and 24-lead 4×4 mm QFN package with exposed paddle for thermal management.
Technical Context
The HMC686LP4E implements a passive MMIC mixer core with on-die LO buffer amplifier and internal baluns on RF and LO ports. Its architecture enables high-side LO injection for 0.7–1.1 GHz RF band operation and low-side LO injection for 1.4–1.5 GHz LTE band operation - two distinct frequency plans supported by the same die.
It features three independent Vcc pins (Vcc1/Vcc2/Vcc3), adjustable G_BIAS (0–5 V) to tune conversion loss vs. linearity, and LO_BIAS pin with external R9 resistor (e.g., 330 Ω) to set LO buffer current. The differential IF interface (IFP/IFN) supports DC-coupled operation, while RF and LO ports are single-ended 50 Ω matched and DC-short via internal baluns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 0.7–1.1 GHz (high-side LO) and 1.4–1.5 GHz (low-side LO); enables dual-band deployment in GSM/LTE infrastructure without redesign. |
| LO Frequency Range | 0.85–1.25 GHz (for 0.7–1.1 GHz RF) and 1.1–1.5 GHz (for 1.4–1.5 GHz RF); supports flexible local oscillator planning. |
| IF Bandwidth | DC to 500 MHz; accommodates full GSM/CDMA transmit/receive channel plans and OFDM signal bandwidths. |
| Conversion Loss | 7.5 dB typical at 0 dBm LO drive; low loss preserves system noise figure and reduces post-mixer amplification needs. |
| Input IP3 | +34 dBm typical at 0.7–1.1 GHz, 0 dBm LO; enables handling of strong interferers in dense cellular environments. |
| LO to RF Isolation | 26 dB typical; minimizes LO leakage into antenna path, easing front-end filter requirements. |
| Supply Current | 105 mA total at +5 V, G_BIAS = 3.5 V; configurable down to 60 mA via G_BIAS adjustment for power-sensitive designs. |
Pinout & Package
Package: 24-lead 4×4 mm RoHS-compliant QFN with exposed thermal paddle (MSL1, 260 °C peak reflow). Ground paddle must be soldered to PCB RF ground per Hittite application note.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 6, 7, 11–14, 18, 20, 23 | N/C | No connection; may be tied to RF ground without performance impact. |
| 2, 5, 15, 17 | GND | RF/DC ground reference; must connect to PCB ground plane with multiple vias. |
| 3 | RF | Single-ended 50 Ω RF input/output port; internally DC-short via balun - no external DC blocking required. |
| 4 | TAP | Center tap of internal RF balun secondary; must be shorted to ground with 0 Ω resistor adjacent to package. |
| 8, 10, 24 | Vcc1, Vcc2, Vcc3 | Independent 5 V supply inputs for LO buffer, mixer core, and bias circuitry; require local decoupling. |
| 9 | LO_BIAS | External resistor (e.g., 330 Ω) sets LO buffer current - adjusts power vs. linearity trade-off. |
| 16 | LO | Single-ended 50 Ω LO input; internally DC-short via balun - no external DC blocking required. |
| 19 | G_BIAS | Adjustable gate bias voltage (0–5 V); tunes conversion loss and IP3 - 3.5 V nominal for +5 V supply. |
| 21, 22 | IFN, IFP | Differential 50 Ω IF interface; supports DC-coupled operation; use external AC coupling if DC not needed. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-band LO optimization | Supports high-side LO for 0.7–1.1 GHz RF and low-side LO for 1.4–1.5 GHz LTE band - one device covers two critical infrastructure bands. |
| Integrated LO amplifier | Eliminates need for external LO driver stage, reducing BOM count, board area, and matching complexity. |
| Adjustable G_BIAS and LO_BIAS | Enables real-time tuning of conversion loss/IP3 and LO drive/power trade-offs without hardware change. |
| DC–500 MHz IF bandwidth | Accommodates zero-IF and low-IF architectures used in modern direct-conversion transceivers. |
| 24-lead 4×4 mm QFN with thermal paddle | Provides low thermal resistance (52 °C/W) and stable RF grounding - essential for high-power base station operation. |
Applications
| Cellular Base Station Receiver | LTE Band 3/7 Transmitter |
|---|---|
Use Scenario: Downconverting 0.7–1.1 GHz RF signals (e.g., GSM 850/900, CDMA) to 150 MHz IF in macro base station receive chain. IC Role / Device Role / Timing Role: Double-balanced mixer with integrated LO amplifier performing RF-to-IF translation and LO amplification. Use Value: +34 dBm IP3 and 26 dB LO-RF isolation reduce adjacent-channel interference and relax pre-mixer filtering requirements. |
Use Scenario: Upconverting 140 MHz IF signals to 1.4–1.5 GHz LTE Band 3 (1.71–1.78 GHz UL) or Band 7 (2.5–2.57 GHz DL) in remote radio head transmitter. IC Role / Device Role / Timing Role: Double-balanced mixer configured for low-side LO injection to generate RF output with minimal spurious content. Use Value: -2RF+2LO suppression >40 dBc and -3RF+3LO >60 dBc ensure compliance with ACLR specifications in LTE FDD systems. |
| WiMAX Base Station Transceiver | OFDM Signal Monitoring Front-End |
Use Scenario: Bidirectional signal path in fixed WiMAX (2.3–2.4 GHz) base station using shared RF frontend with TDD switching. IC Role / Device Role / Timing Role: Reconfigurable mixer supporting both upconversion (IF→RF) and downconversion (RF→IF) via LO plan selection. Use Value: DC–500 MHz IF bandwidth captures full 20 MHz WiMAX channel plus guard bands; 7.5 dB conversion loss maintains EVM under high PAPR. |
Use Scenario: Real-time spectrum analysis of OFDM signals (e.g., LTE, 5G NR) in lab-grade monitoring equipment requiring wide instantaneous bandwidth. IC Role / Device Role / Timing Role: High-linearity downconverter translating RF to baseband/low-IF for ADC digitization. Use Value: +25 dBm input P1dB and +34 dBm IP3 preserve signal integrity across multi-tone OFDM waveforms without compression or intermodulation distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC684LP4E | Pin-for-pin compatible; optimized for 0.7–1.0 GHz RF band with low-side LO only (no high-side LO support). | Not suitable for 0.7–1.1 GHz high-side LO configurations; limited to lower RF band edge. | Select HMC684LP4E only when LO plan is strictly low-side and RF band is ≤1.0 GHz. |
| ADL5801ACPZ-R7 | Active double-balanced mixer; requires external LO buffer; 700–1000 MHz RF range; +27 dBm IP3 (lower than HMC686LP4E's +34 dBm). | Higher supply current (180 mA vs. 105 mA); no integrated LO amp; narrower RF bandwidth. | Choose ADL5801ACPZ-R7 when external LO buffering is already present and lower cost outweighs linearity/power advantages. |
Compared with HMC684LP4E and ADL5801ACPZ-R7, the HMC686LP4E uniquely combines dual LO injection modes (high-side and low-side), highest IP3 (+34 dBm), and integrated LO amplifier - making it optimal for multi-band LTE/GSM base stations where flexibility, linearity, and integration density are critical.
Availability
HMC686LP4E is available at Aetrix Electronics and suitable for cellular infrastructure, LTE repeater systems, and WiMAX base station designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for HMC686LP4E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and continues its high-frequency RF IC product line, emphasizing performance, integration, and reliability for communications infrastructure.
The HMC686LP4E belongs to Hittite's legacy BiCMOS mixer family, engineered specifically for high-dynamic-range wireless infrastructure applications including macro/micro base stations, repeaters, and point-to-point radios.
FAQ
What is the primary RF frequency coverage of the HMC686LP4E?
The HMC686LP4E supports two distinct RF bands: 0.7–1.1 GHz with high-side LO injection and 1.4–1.5 GHz with low-side LO injection. This dual-band capability is explicitly validated in the datasheet for downconversion and upconversion use cases, enabling reuse across GSM/CDMA and LTE Band 3/7 deployments without hardware change. Performance metrics like IP3 and conversion loss are specified separately for each band.
Does the HMC686LP4E require an external LO amplifier?
No, the HMC686LP4E integrates a dedicated LO amplifier, eliminating the need for an external driver stage. The LO input (Pin 16) accepts -3 to +3 dBm drive level, and the internal amplifier provides sufficient gain to drive the mixer core. This integration reduces component count, layout complexity, and matching sensitivity - confirmed by the "BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER" designation in the official part description.
How does G_BIAS adjustment affect HMC686LP4E performance?
G_BIAS (Pin 19) controls the mixer core's gate bias voltage (0–5 V), directly trading conversion loss against linearity. At 3.5 V (nominal for +5 V supply), conversion loss is ~7.5 dB and IP3 is +34 dBm. Reducing G_BIAS to 2.5 V increases conversion loss but improves IP3 marginally; raising it increases gain but degrades IP3. These relationships are quantified in Figures 10-4 and 10-6 of the datasheet.
What is the recommended thermal management for the HMC686LP4E?
The HMC686LP4E requires soldering of its exposed thermal paddle to a solid PCB ground plane with ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). Its thermal resistance is 52 °C/W (channel-to-ground paddle), and maximum continuous power dissipation is 0.76 W at 85 °C ambient (derated above that temperature). This thermal design is mandatory to maintain performance and reliability in base station applications.
Is the HMC686LP4E pin-compatible with any other Hittite mixers?
Yes, the HMC686LP4E is pin-for-pin compatible with the HMC684LP4E, as explicitly stated in the datasheet: "The HMC686LP4(E) is pin for pin compatible with the HMC684LP4(E) which is a 0.7–1.0 GHz converter optimized for low side LO." Both share identical 24-lead 4×4 mm QFN packaging and pin assignments, enabling drop-in replacement where LO plan and RF band align.
125658-HMC686LP4E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Obsolete
- Type:
- Mixer
- Frequency:
- 1.4GHz ~ 1.5GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC686LP4
125658-HMC686LP4E FAQ
1.How can I place an order for 125658-HMC686LP4E through Aetrix?
Please submit a Request for Quotation (RFQ) for 125658-HMC686LP4E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 125658-HMC686LP4E reliable?
The price and inventory of 125658-HMC686LP4E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 125658-HMC686LP4E is usually 5 days.
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125658-HMC686LP4E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 125658-HMC686LP4E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 125658-HMC686LP4E?
For technical support, including 125658-HMC686LP4E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 125658-HMC686LP4E requirements.
6.How does Aetrix verify that 125658-HMC686LP4E is sourced from the original manufacturer or authorized distributors?
All 125658-HMC686LP4E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 125658-HMC686LP4E meets industry standards.
7.What is the process for return or replacement of 125658-HMC686LP4E?
All 125658-HMC686LP4E units undergo pre-shipment inspection (PSI). If there is an issue with 125658-HMC686LP4E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 125658-HMC686LP4E part is unused and in its original packaging.
Return procedure for 125658-HMC686LP4E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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