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Analog Devices Inc. 126222-HMC789ST89E

Part No.:
126222-HMC789ST89E
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix126222-HMC789ST89E.pdf
Description:
BOARD EVAL 900MHZ HMC789ST89E
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,448

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Product details

Overview

HMC789ST89E from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT gain block MMIC amplifier operating from 0.7 to 2.8 GHz, delivering 18 dB typical gain, +25 dBm P1dB output power, and +42 dBm OIP3 at +5 V supply. It serves as a high-linearity driver/pre-driver in cellular/4G base station transmit chains and fixed wireless infrastructure.

For engineers reviewing the HMC789ST89E datasheet, HMC789ST89E pinout, HMC789ST89E application, or HMC789ST89E equivalent, this page provides verified RF performance data, SOT-89 package interface details, temperature-stable gain/return loss behavior across 900/1900/2600 MHz bands, and validated alternative gain blocks for PA driver stage selection.

Technical Context

The HMC789ST89E employs a monolithic InGaP HBT process with DC-coupled RFIN and RFOUT pins requiring external matching networks per band. Its single +5 V bias enables optimized linearity without negative supply or complex bias sequencing.

Performance is characterized across three discrete frequency bands-810–960 MHz, 1710–1990 MHz, and 2420–2700 MHz-with gain variation ≤0.01 dB/°C and input/output return loss ≥10 dB across all bands and temperatures from –40°C to +85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 0.7–2.8 GHz broadband operation covering cellular (810–960 MHz), PCS/UMTS (1710–1990 MHz), and LTE/WiMAX (2420–2700 MHz) bands
Small-Signal Gain 18 dB typical at 900 MHz; maintains ≥12 dB across full band - enables stable cascade design without active gain control
OIP3 +42 dBm typical at 900/1900/2600 MHz - supports high-ACPR suppression in CDMA, W-CDMA, and LTE signals
P1dB +25 dBm typical at 900 MHz; ≥+23 dBm at 2600 MHz - delivers robust linear output into 50 Ω load
Noise Figure 3.8 dB typical across all bands - suitable for low-noise pre-driver stages before final PA
Supply Current 150 mA at +5 V - enables efficient operation with 45% PAE at +25 dBm output
Operating Temperature –40°C to +85°C - qualified for outdoor small cell and fixed wireless equipment environments

Pinout & Package

Package: Industry-standard SOT-89 (RoHS-compliant, MSL1, 100% matte Sn plating, thermal resistance 77°C/W junction-to-paddle). Ground paddle must be soldered to PCB RF ground plane via multiple vias.

Pin/Terminal Circuit Role Design Meaning
1 RFIN DC-coupled RF input; requires off-chip matching network (e.g., 10 pF/18 nH at 900 MHz) for 50 Ω impedance transformation
2, 4 GND RF/DC ground terminals; must be connected directly to PCB ground plane - critical for stability and thermal dissipation
3 RFOUT RF output and DC bias input; supplies +5 V to internal collector; requires off-chip output matching (e.g., 100 pF/3.8 nH at 900 MHz)

Key Features

Feature Design Value
High Linearity +42 dBm OIP3 enables >65 dBc ACPR in CDMA/W-CDMA signals without digital predistortion overhead
Single +5 V Operation Eliminates need for dual-rail or negative bias supplies - simplifies power architecture in compact RF modules
Temperature-Stable Gain 0.01 dB/°C variation ensures consistent gain flatness across –40°C to +85°C - reduces calibration burden in field-deployed radios
Broadband Return Loss ≥10 dB input/output return loss across all bands and temperatures - minimizes VSWR-induced power loss and instability risk
SOT-89 Package Compatibility Standard footprint allows drop-in replacement in existing designs using similar gain blocks (e.g., HMC311ST89E, QPL9057)

Applications

Cellular Base Station Driver Fixed Wireless Access Unit

Use Scenario: Final-stage driver in 4G LTE macrocell or microcell transceiver before GaN/GaAs final PA.

IC Role / Device Role / Timing Role: High-gain, high-OIP3 RF driver amplifier providing +25 dBm linear output into 50 Ω load.

Use Value: Enables >30 dB system gain margin while maintaining <–55 dBc ACPR at 20 MHz LTE bandwidth - reduces need for DPD complexity.

Use Scenario: Transmit chain amplifier in point-to-point 2.5 GHz fixed wireless CPE or base unit.

IC Role / Device Role / Timing Role: Pre-driver amplifying IF-to-RF upconverted signal prior to final PA stage.

Use Value: Delivers +23 dBm P1dB and +42 dBm OIP3 at 2600 MHz - supports 256-QAM modulation with EVM <3.5% under real-world channel conditions.

WLAN/WiMAX Front-End Test Equipment Signal Generator Stage

Use Scenario: Output amplifier in 5 GHz WiMAX base station RF front-end supporting IEEE 802.16d/e.

IC Role / Device Role / Timing Role: Broadband gain block operating across 2.4–2.7 GHz band with minimal external components.

Use Value: Achieves 14 dB gain and 12 dB return loss at 2600 MHz - simplifies matching network design and improves board-level yield.

Use Scenario: Output buffer in benchtop RF signal generator or vector network analyzer source module.

IC Role / Device Role / Timing Role: Stable, low-distortion gain stage driving 50 Ω test port with calibrated output power.

Use Value: Maintains ±0.3 dB gain flatness and <–30 dBc harmonics from 0.7–2.8 GHz - ensures traceable amplitude accuracy across frequency sweep.

Equivalent & Alternatives

The following parts are listed as comparable options for similar gain block applications.

Alternative Part Technical Difference Application Difference Selection Advice
QPL9057 0.6–4.2 GHz range; +22 dBm P1dB; +39 dBm OIP3; 3.3 V operation; 4x4 mm QFN Broadband coverage beyond 2.8 GHz; lower voltage operation; higher integration density Preferred for multi-band 5G NR sub-6 GHz designs requiring wider frequency coverage and smaller footprint
HMC311ST89E 0.1–4.0 GHz; +19 dBm P1dB; +34 dBm OIP3; same SOT-89 package; +5 V supply Wider low-frequency coverage; lower linearity and output power; legacy Hittite part Valid drop-in replacement where +25 dBm output and +42 dBm OIP3 are not required - e.g., IF amplification or low-power repeaters

Compared with QPL9057 and HMC311ST89E, the HMC789ST89E offers superior linearity (+42 dBm OIP3) and output power (+25 dBm P1dB) within its 0.7–2.8 GHz range, making it optimal for high-efficiency PA driver stages in cellular infrastructure where spectral purity and power efficiency are critical.

Availability

HMC789ST89E is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access units, and RF test equipment requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for HMC789ST89E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and continues to manufacture and support its high-performance RF IC portfolio, including gain blocks, LNAs, and MMICs for communications and defense markets.

The HMC789ST89E belongs to Hittite's InGaP HBT gain block product line, designed specifically for high-linearity, high-efficiency RF driver applications in cellular, fixed wireless, and test instrumentation systems.

FAQ

What is the recommended operating voltage for the HMC789ST89E?

The HMC789ST89E is specified for single +5 V DC operation, with absolute maximum collector bias voltage of +6.0 V. Performance metrics including gain, P1dB, and OIP3 are characterized at +5 V; supply voltage variation from 4.5 V to 5.5 V causes measurable but bounded shifts in gain and output power - see Fig. 13 in the datasheet. Operating outside this range risks reliability degradation or permanent damage.

Does the HMC789ST89E require external matching components?

Yes, the HMC789ST89E requires external matching components on both RFIN (Pin 1) and RFOUT (Pin 3) to achieve 50 Ω impedance transformation and optimal RF performance. Application circuits for 900 MHz, 1900 MHz, and 2600 MHz bands specify discrete L/C values - e.g., 10 pF capacitor and 18 nH inductor at 900 MHz. The device itself is DC-coupled and does not integrate matching networks.

What is the thermal management requirement for the HMC789ST89E?

The HMC789ST89E has a thermal resistance of 77°C/W (junction-to-ground paddle) and must be mounted with its exposed paddle soldered directly to a thermally robust PCB ground plane using multiple vias. At 150 mA quiescent current and +25 dBm output, junction temperature rise can exceed 60°C above ambient - adequate heatsinking is mandatory for continuous operation at +85°C ambient.

Is the HMC789ST89E RoHS-compliant and MSL-rated?

Yes, the HMC789ST89E uses RoHS-compliant low-stress injection-molded plastic packaging with 100% matte tin lead finish and is rated MSL1 (Moisture Sensitivity Level 1), meaning it is not moisture-sensitive and may be stored indefinitely at ambient conditions without baking prior to reflow. Peak reflow temperature is rated to 260°C.

Can the HMC789ST89E be used in 5G NR sub-6 GHz applications?

The HMC789ST89E operates up to 2.8 GHz and covers key 5G NR bands n1 (2100 MHz), n3 (1800 MHz), n7 (2600 MHz), and n41 (2500 MHz), but does not extend to n77/n78 (3.3–3.8 GHz) or n79 (4.4–5.0 GHz). For full sub-6 GHz coverage, consider alternatives like QPL9057. Within its 0.7–2.8 GHz range, the HMC789ST89E delivers verified +42 dBm OIP3 and +25 dBm P1dB - suitable for 5G NR FR1 driver stages where bandwidth and linearity requirements align.

126222-HMC789ST89E Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Last Time Buy
Type:
Amplifier
Frequency:
900MHz
Contents:
Board(s)
Utilized IC / Part:
HMC789ST89E

126222-HMC789ST89E FAQ

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7.What is the process for return or replacement of 126222-HMC789ST89E?

All 126222-HMC789ST89E units undergo pre-shipment inspection (PSI). If there is an issue with 126222-HMC789ST89E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 126222-HMC789ST89E part is unused and in its original packaging.

Return procedure for 126222-HMC789ST89E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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