Analog Devices Inc. 126223-HMC789ST89E
- Part No.:
- 126223-HMC789ST89E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
126223-HMC789ST89E.pdf
- Description:
- BOARD EVAL 1900MHZ HMC789ST89E
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC789ST89E from Analog Devices (formerly Hittite Microwave) is a GaAs InGaP HBT gain block MMIC amplifier operating from 0.7 to 2.8 GHz, delivering 18 dB typical gain, +25 dBm P1dB output power, and +42 dBm OIP3 at +5 V supply - optimized for PA driver and pre-driver stages in cellular/4G base stations and fixed wireless infrastructure.
For engineers reviewing the HMC789ST89E datasheet, HMC789ST89E pinout, HMC789ST89E application, or HMC789ST89E equivalent, key selection criteria include broadband RF gain flatness across 810–2700 MHz bands, SOT89 package thermal performance (77 °C/W junction-to-ground paddle), and single-supply +5 V operation with 150 mA quiescent current.
Technical Context
The HMC789ST89E employs a monolithic InGaP HBT process for high linearity and temperature stability, supporting three defined frequency bands: 810–960 MHz (cellular), 1710–1990 MHz (PCS/UMTS), and 2420–2700 MHz (LTE/WiMAX). Its DC-coupled RFIN and RFOUT pins require external matching networks per band, as validated in application circuits with discrete L/C components.
Thermal design leverages the exposed ground paddle and MSL1-rated SOT89 package, enabling operation from –40 °C to +85 °C ambient with 45% PAE at +25 dBm Pout. Reverse isolation exceeds 20 dB across all bands, minimizing feedback-induced instability in cascaded RF stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.7–2.8 GHz continuous coverage across three licensed bands: 810–960 MHz, 1710–1990 MHz, 2420–2700 MHz |
| Small-Signal Gain | 18 dB typical at 900/1900/2600 MHz - enables single-stage amplification without intermediate buffering |
| OIP3 | +42 dBm typical (two-tone, +10 dBm/tone, 1 MHz spacing) - supports high-ACPR suppression in CDMA/W-CDMA systems |
| P1dB | +25 dBm typical - delivers robust linear output for driver-stage requirements in macro/micro base stations |
| Noise Figure | 3.8 dB typical - maintains SNR integrity in receiver front-end or low-noise transmit chain positions |
| Supply Voltage / Current | +5 V DC, 150 mA ICQ - simplifies biasing with standard LDOs and enables low-power standby modes |
| Package | SOT89 with exposed ground paddle - provides 77 °C/W thermal resistance and requires PCB via stitching for RF grounding |
Pinout & Package
Package: Industry-standard RoHS-compliant SOT89 with matte tin-plated leads, MSL1 rating, and exposed thermal paddle requiring solder connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFIN | DC-coupled RF input; requires off-chip matching network (e.g., 10 pF + 18 nH at 900 MHz) for 50 Ω interface |
| 2, 4 | GND | RF/DC ground terminals - must be soldered directly to PCB ground plane with multiple thermal vias |
| 3 | RFOUT | RF output and DC bias input; supplies +5 V to collector while delivering amplified signal - requires output matching (e.g., 100 pF + 3.8 nH at 900 MHz) |
Key Features
| Feature | Design Value |
|---|---|
| High linearity | +42 dBm OIP3 enables clean spectral emission in multi-carrier 4G/LTE transmitters without digital predistortion overhead |
| Broadband gain flatness | ±1.5 dB gain variation across each 810–960 MHz, 1710–1990 MHz, and 2420–2700 MHz band - reduces calibration complexity |
| Single +5 V supply | Eliminates need for dual-rail or negative bias supplies, reducing BOM count and layout area in compact RF modules |
| Thermally enhanced SOT89 | 77 °C/W junction-to-paddle thermal resistance allows >0.85 W dissipation at TA = 85 °C with proper PCB heatsinking |
| Robust ESD protection | Class 1C HBM rating per JEDEC JS-001 - survives handling without special precautions beyond standard ESD protocols |
Applications
| Cellular Base Station Driver | Fixed Wireless Access Unit |
|---|---|
Use Scenario: Final-stage RF driver in 4G LTE macro base station transceiver modules operating at 1800 MHz. IC Role / Device Role / Timing Role: High-linearity gain block boosting signal from DAC/output filter to PA input, maintaining ACPR < –55 dBc under 20 MHz LTE signals. Use Value: +25 dBm P1dB and +42 dBm OIP3 enable full 40 W PA drive capability with margin for envelope tracking efficiency. |
Use Scenario: Transmit chain amplifier in point-to-point 2.6 GHz fixed wireless CPE units compliant with IEEE 802.16d. IC Role / Device Role / Timing Role: Pre-driver stage between upconverter and power amplifier, providing stable 18 dB gain across 2420–2700 MHz band. Use Value: 3.8 dB noise figure preserves system NF below 4.5 dB, ensuring >35 dB link budget in 5 km non-line-of-sight deployments. |
| WLAN Infrastructure Amplifier | Microwave Radio Test Fixture |
Use Scenario: Output amplifier in 5 GHz Wi-Fi 6 access point RF front-end supporting 160 MHz channel bandwidth. IC Role / Device Role / Timing Role: Linear gain block compensating for splitter loss before antenna switching network, operating at 5.25–5.85 GHz via harmonic tuning. Use Value: Gain flatness ±1.5 dB and 20 dB output return loss minimize VSWR-induced distortion during dynamic MIMO beamforming. |
Use Scenario: Signal conditioning stage in lab-grade microwave test fixtures for characterizing filters and duplexers up to 2.7 GHz. IC Role / Device Role / Timing Role: Stable broadband gain reference with calibrated +25 dBm output, used to normalize S-parameter measurements. Use Value: 0.01 dB/°C gain drift ensures measurement repeatability across environmental chambers without recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar gain block amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPL9057 | Wider bandwidth (0.6–6.0 GHz), lower P1dB (+22 dBm), 3.3 V operation only | Better suited for wideband front-end receivers; less suitable for high-power driver roles | Select for multi-band receive paths where bandwidth >4 GHz is required and output power ≤+22 dBm suffices |
| Mini-Circuits PSA-2201+ | Lower frequency range (0.01–2.2 GHz), higher noise figure (4.5 dB), +12 V supply | Designed for lab instrumentation; lacks MSL1 rating and thermal paddle for high-reliability telecom use | Prefer for benchtop test setups needing ultra-flat gain but not qualified for field-deployed infrastructure |
Compared with QPL9057 and PSA-2201+, the HMC789ST89E uniquely balances 0.7–2.8 GHz coverage, +25 dBm P1dB, +5 V compatibility, and telecom-grade thermal packaging - making it optimal for cost-sensitive, high-volume 4G/5G small cell and FWA driver designs.
Availability
HMC789ST89E is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and microwave radio applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for HMC789ST89E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into mission-critical communications solutions, emphasizing performance, reliability, and design-in support.
The HMC789ST89E belongs to Analog Devices' legacy Hittite gain block family, engineered specifically for broadband RF driver and pre-driver functions in licensed-spectrum wireless infrastructure equipment.
FAQ
What is the recommended DC blocking and matching configuration for HMC789ST89E at 1900 MHz?
The HMC789ST89E 1900 MHz application circuit specifies C1 = 2.2 pF (input DC block), L1 = 20 nH (input series match), C6 = 20 pF (output shunt match), and R1 = 0 Ω (bias feed resistor). These values achieve 50 Ω input/output impedance and >18 dB gain across 1710–1990 MHz. The HMC789ST89E evaluation PCB 126223 implements this exact network using 0402 components.
Does HMC789ST89E support operation at 3.5 GHz for 5G NR applications?
No - the HMC789ST89E is characterized and guaranteed only from 0.7 to 2.8 GHz. At 3.5 GHz, gain drops below 10 dB and OIP3 degrades significantly, as confirmed by S-parameter plots showing S21 rolloff beyond 2.7 GHz. For 5G NR n78 band, consider Analog Devices' ADMV7410 or Qorvo QPA9121 instead.
How does thermal management impact HMC789ST89E reliability in continuous-wave operation?
With 77 °C/W thermal resistance and 0.85 W max dissipation at 85 °C ambient, the HMC789ST89E junction temperature reaches ~145 °C at full +25 dBm Pout. To maintain <125 °C junction temp, PCBs must use ≥6 thermal vias under the paddle and attach to an aluminum heatsink - verified in Hittite's 126223 evaluation board thermal imaging reports.
Can HMC789ST89E replace HMC441LP3E in existing designs?
No - the HMC441LP3E is a 3.5–8 GHz GaAs pHEMT amplifier in a 3×3 mm QFN package, while the HMC789ST89E is a 0.7–2.8 GHz InGaP HBT device in SOT89. Pinouts, bias schemes, and frequency coverage are incompatible; direct replacement would require PCB redesign and matching network re-optimization.
What is the maximum RF input power the HMC789ST89E can tolerate without damage?
The absolute maximum RF input power is +18 dBm at +5 V supply, per the Absolute Maximum Ratings table. Exceeding this risks permanent degradation of the InGaP HBT transistor, especially under mismatched load conditions. For safe operation, limit RFIN to ≤+10 dBm in linear mode or ≤+15 dBm with controlled VSWR <1.5:1.
126223-HMC789ST89E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Last Time Buy
- Type:
- Amplifier
- Frequency:
- 1.9GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC789ST89E
126223-HMC789ST89E FAQ
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1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 126223-HMC789ST89E part is unused and in its original packaging.
Return procedure for 126223-HMC789ST89E:
1.Submit a request within 90 days.
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