Analog Devices Inc. 129550-HMC788LP2E

Overview

HMC788LP2E from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT MMIC gain block amplifier operating from DC to 10 GHz, delivering 14 dB small-signal gain, +20 dBm P1dB output power, and +30 dBm output IP3 at +5 V supply with 76 mA quiescent current. It serves as a cascadable 50 Ω gain stage or LO driver for single/double-balanced mixers in microwave radio and test equipment.

For engineers reviewing the HMC788LP2E datasheet, HMC788LP2E pinout, HMC788LP2E application, or HMC788LP2E equivalent, this page provides verified specifications, thermal stability data, DFN package layout guidance, and real-world use cases for RF front-end design, LO signal conditioning, and broadband instrumentation amplification.

Technical Context

The HMC788LP2E employs a Darlington feedback pair architecture that minimizes sensitivity to process variation and ensures ±0.025 dB/°C gain drift over temperature across 6–10 GHz. Its monolithic GaAs pHEMT construction enables broadband operation without external matching networks beyond DC blocking on RFIN.

All I/O ports are internally matched to 50 Ω, supporting direct cascade into mixers or filters. The device operates over –40°C to +85°C ambient, with junction-to-ground-paddle thermal resistance of 96 °C/W and MSL1 reflow compatibility up to 260 °C peak.

Key Specifications

Pinout & Package

Package: 6-lead 2×2 mm DFN with exposed ground paddle; RoHS-compliant low-stress plastic body; MSL1 rating; matte tin lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar gain block applications.

Compared with HMC637ALP5E and QPL9547, the HMC788LP2E offers the optimal balance of output power, linearity, and compact 2×2 mm footprint for fixed +5 V infrastructure RF designs requiring stable DC–10 GHz gain with minimal external components.

Availability

HMC788LP2E is available at Aetrix Electronics and suitable for cellular infrastructure, microwave radio, test & measurement equipment, and UWB communications requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for HMC788LP2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF portfolio into precision analog and RF solutions for communications, defense, and instrumentation markets.

The HMC788LP2E belongs to Hittite's pHEMT MMIC gain block product line, engineered for broadband, high-linearity RF signal conditioning in infrastructure-grade wireless systems where thermal stability and 50 Ω system integration are essential.

FAQ

What is the recommended DC blocking capacitor value for the RFIN pin of the HMC788LP2E?

A 0.01 µF capacitor in 0502 package is specified in the evaluation board bill of materials and validated for DC–10 GHz operation. This value ensures low impedance (<0.1 Ω) up to 10 GHz while maintaining physical compatibility with the 2×2 mm DFN layout. Larger values risk resonance near 10 GHz; smaller values increase series impedance and degrade low-frequency response. Always place the capacitor within 1 mm of the RFIN pad.

Does the HMC788LP2E require external bias chokes or resistors for operation?

No - the HMC788LP2E integrates internal bias circuitry and requires only a +5 V supply applied to the RFOUT pin (Pin 5) and proper grounding of Pins 1, 3, 4, 6 and the exposed paddle. No external bias chokes, resistors, or decoupling networks beyond standard 0.1 µF and 2.2 µF supply bypass capacitors are needed, simplifying layout and reducing part count.

Can the HMC788LP2E operate reliably at +85 °C ambient temperature?

Yes - the HMC788LP2E is rated for continuous operation from –40 °C to +85 °C ambient. At +85 °C, measured P1dB remains ≥+18 dBm and gain variation stays within ±0.5 dB across DC–10 GHz when mounted on a PCB with ≥6 thermal vias under the ground paddle and connected to an appropriate heatsink, as confirmed in the thermal characterization data.

Is the HMC788LP2E pin-compatible with other Hittite 2×2 mm DFN amplifiers like the HMC637ALP5E?

No - the HMC788LP2E uses a 6-lead 2×2 mm DFN with specific pin assignments (RFIN on Pin 2, RFOUT on Pin 5, GND on Pin 3), whereas the HMC637ALP5E uses a 32-lead 5×5 mm QFN package with different pin count, spacing, and function mapping. Direct replacement requires PCB redesign; they are functional alternatives but not pin-compatible.

What is the maximum RF input power the HMC788LP2E can tolerate without damage?

The absolute maximum RF input power is +15 dBm at +5 V supply, as specified in the Absolute Maximum Ratings table. Exceeding this level risks permanent degradation of the GaAs pHEMT transistor, especially under sustained CW conditions. For reliable operation, keep input power ≤+10 dBm in linear applications and implement input attenuation or limiter circuits if higher input levels are expected.