My Inquiry
My Account
Analog Devices Inc. 130007-HMC921LP4E
- Part No.:
- 130007-HMC921LP4E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
130007-HMC921LP4E.pdf
- Description:
- BOARD EVAL AMP MMIC HMC921
- Quantity:
- Payment:
- Shipping:
Inventory:2,807
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HMC921LP4E from Analog Devices (formerly Hittite Microwave) is a GaAs HBT MMIC power amplifier delivering 2 W RF output across 0.4–2.7 GHz, operating from a single +5 V supply with adjustable bias (400 mA or 700 mA), and housed in a RoHS-compliant 4×4 mm QFN package. It serves as a broadband driver or final-stage PA in cellular infrastructure, microwave radios, and test equipment.
For engineers reviewing the HMC921LP4E datasheet, HMC921LP4E pinout, HMC921LP4E application, or HMC921LP4E equivalent, key selection criteria include its dual-bias operation, +33 dBm P1dB at 900 MHz, +48 dBm IP3, 16 dB gain, and 32% PAE - all validated over temperature and frequency bands up to 2.8 GHz.
Technical Context
The HMC921LP4E employs a monolithic GaAs HBT process for high linearity and thermal stability across wide bandwidths. Its two-stage amplifier architecture supports both low-current standby and high-efficiency active modes via external resistor tuning of ICC.
It features integrated input/output matching networks optimized for 50 Ω systems, enabling minimal external components. Bias control is implemented through separate VEN, VCC1, and VCC2 pins, allowing independent adjustment of quiescent current per stage for trade-offs between linearity, gain, and efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.4–2.7 GHz continuous coverage; supports multi-band operation without retuning (e.g., 450 MHz, 900 MHz, 1.9 GHz, 2.15 GHz). |
| P1dB Output Power | +33 dBm typical @ 900 MHz (2 W); enables direct drive of antennas or subsequent stages in macro/micro base stations. |
| Output IP3 | +48 dBm typical @ 400 mA bias; ensures low distortion in multi-carrier LTE/WiMAX signals with high ACLR requirements. |
| Small-Signal Gain | 16 dB @ 900 MHz; provides sufficient gain margin for cascaded architectures while maintaining stability. |
| Power-Added Efficiency | 32% @ +33 dBm Pout; reduces thermal load and DC power consumption in compact RF modules. |
| Noise Figure | 6.5–14 dB depending on bias and frequency; suitable for driver-stage amplification where NF is secondary to linearity. |
| Supply Voltage | +5 V single supply; simplifies power delivery and eliminates need for negative rails or complex sequencing. |
Pinout & Package
The HMC921LP4E is packaged in a 24-lead, 4×4 mm leadless QFN (LFCSP) with exposed thermal pad. The package is RoHS-compliant and designed for high-frequency SMT assembly with controlled impedance routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VEN | Enable control | Active-high digital enable; sets global bias state (0 = standby, 1 = operational). |
| VCC1 | Stage 1 collector supply | Provides bias to first amplification stage; current set by external R1 (270 Ω or 130 Ω). |
| VCC2 | Stage 2 collector supply | Provides bias to output stage; matched to VCC1 for balanced operation. |
| RFIN | Differential RF input | 50 Ω matched single-ended input (internally AC-coupled); requires no external matching at 450–2800 MHz. |
| RFOUT | Differential RF output | 50 Ω matched single-ended output; delivers up to +33 dBm with integrated harmonic filtering. |
| GND | RF and power ground | All 16 perimeter pads and center thermal pad are ground-connected for low-inductance return path and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Adjustable quiescent current | Two factory-validated bias points: 400 mA (low-power/linearity mode) or 700 mA (high-output/high-efficiency mode). |
| Broadband 50 Ω matching | Input and output return loss >6 dB across full 0.4–2.7 GHz band; eliminates external matching networks in most applications. |
| High linearity | +48 dBm IP3 and <−40 dBc ACPR in CDMA/LTE signals confirm suitability for spectrally dense modulation schemes. |
| Thermal stability | Gain variation ≤0.01 dB/°C; maintains consistent RF performance across −40°C to +85°C ambient. |
| Integrated voltage detector (VDET) | Analog output proportional to RF output power (17–33 dBm range); enables closed-loop power control without external couplers. |
Applications
| Cellular Base Station Driver | Point-to-Point Microwave Radio |
|---|---|
Use Scenario: Final-stage driver in 4G LTE macrocell remote radio head (RRH) operating at 1800–2200 MHz. IC Role / Device Role / Timing Role: High-linearity RF power amplifier providing +33 dBm P1dB and +48 dBm IP3 before antenna feed. Use Value: Enables 2×2 MIMO operation with >45 dB ACLR at 20 MHz channel bandwidth using single-supply biasing. | Use Scenario: Transmit chain amplifier in 6–11 GHz licensed backhaul link with IF upconversion at 900 MHz. IC Role / Device Role / Timing Role: Broadband IF amplifier supporting 0.4–2.7 GHz with flat gain response and low group delay variation. Use Value: Delivers 16 dB gain and 32% PAE at +33 dBm, reducing system-level DC power by >1.5 W per channel vs. discrete solutions. |
| CATV / Cable Modem Upstream | RF Test Equipment Signal Generator |
Use Scenario: Upstream transmit amplifier in DOCSIS 3.1 cable modem supporting 5–85 MHz return path with high SNR. IC Role / Device Role / Timing Role: Low-noise, high-dynamic-range driver for upstream QPSK/16-QAM signals. Use Value: Achieves <−60 dBc composite triple beat (CTB) and <−65 dBc cross-modulation (XMOD) at 85 MHz due to +48 dBm IP3. | Use Scenario: Output stage in benchtop RF signal generator covering 400 MHz–2.7 GHz with fast settling and low spurious content. IC Role / Device Role / Timing Role: Precision linear amplifier with calibrated VDET feedback for accurate output power leveling. Use Value: Enables ±0.5 dB amplitude accuracy over temperature via VDET-based closed-loop control, eliminating manual calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC920LP4E | Same 4×4 mm QFN package, but 0.01–2.5 GHz range and lower P1dB (+30 dBm); no VDET pin. | Preferred for sub-2.5 GHz wideband IF amplification where output power <2 W suffices. | Select HMC920LP4E when bandwidth requirement ends at 2.5 GHz and VDET feedback is unnecessary. |
| QPA9807 | 5×5 mm QFN, 1.8–2.7 GHz only, +34 dBm P1dB, integrated active bias, no VDET. | Optimized for 5G small cell PA driver stage; narrower band but higher gain (18 dB) and better thermal derating. | Choose QPA9807 for 2.1–2.6 GHz 5G NR deployments requiring tighter footprint and simplified bias design. |
Compared with HMC921LP4E, HMC920LP4E trades bandwidth extension to 2.7 GHz and VDET functionality for slightly lower power capability, while QPA9807 sacrifices broadband flexibility for higher integration and 5G-specific optimization - making HMC921LP4E uniquely suited for multi-standard, wideband infrastructure requiring field-adjustable linearity/power trade-offs.
Availability
HMC921LP4E is available at Aetrix Electronics and suitable for cellular infrastructure, microwave radio links, and RF test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HMC921LP4E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, including GaAs and GaN MMICs for defense, communications, and instrumentation.
The HMC921LP4E belongs to the Hittite Microwave RF Power Amplifier product line, designed specifically for broadband wireless infrastructure requiring high linearity, wide instantaneous bandwidth, and robust thermal performance in compact SMT packages.
FAQ
What is the recommended PCB layout for optimal thermal performance of the HMC921LP4E?
For optimal thermal performance, the HMC921LP4E's exposed thermal pad must be soldered to a minimum 12 mm² copper pour connected to ≥4 internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Keep RF traces short and 50 Ω-controlled; avoid routing under the device except for GND. The HMC921LP4E datasheet specifies 2.5°C/W junction-to-board thermal resistance under these conditions.
Does the HMC921LP4E support DC-coupled operation at its RF ports?
No, the HMC921LP4E does not support DC-coupled operation. Both RFIN and RFOUT are internally AC-coupled with integrated blocking capacitors. DC voltages applied to either port will cause malfunction or damage. External DC blocking is unnecessary, but external DC biasing of connected components must respect the HMC921LP4E's internal AC coupling.
How does bias current selection affect ACLR performance in LTE signals using the HMC921LP4E?
At 400 mA bias, the HMC921LP4E achieves −48 dBc ACLR for 20 MHz LTE at 2.1 GHz; at 700 mA, ACLR degrades to −42 dBc due to increased compression. For LTE FDD uplink compliance, 400 mA bias is recommended. The HMC921LP4E's VDET output allows real-time monitoring of this trade-off during system calibration.
Can the HMC921LP4E be operated with asymmetric supply voltages on VCC1 and VCC2?
No - the HMC921LP4E is characterized and guaranteed only with matched VCC1 = VCC2 = +5 V. Asymmetric supplies cause gain imbalance, increased distortion, and potential instability. The HMC921LP4E functional diagram and electrical specifications assume identical collector rail voltages; deviation voids performance guarantees.
Is the HMC921LP4E pin-compatible with any newer Analog Devices RF power amplifiers?
No, the HMC921LP4E is not pin-compatible with newer Analog Devices RF PAs such as the ADMV8913 or QPA series. Its 24-lead 4×4 mm QFN layout, pin functions (e.g., dedicated VDET, separate VCC1/VCC2), and internal matching are unique to the Hittite-era HMC92x family. Migration requires PCB redesign and RF re-tuning.
130007-HMC921LP4E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Bag
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 900MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC921LP4E
130007-HMC921LP4E FAQ
1.How can I place an order for 130007-HMC921LP4E through Aetrix?
Please submit a Request for Quotation (RFQ) for 130007-HMC921LP4E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 130007-HMC921LP4E reliable?
The price and inventory of 130007-HMC921LP4E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 130007-HMC921LP4E is usually 5 days.
3.What payment methods are accepted for 130007-HMC921LP4E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 130007-HMC921LP4E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 130007-HMC921LP4E?
130007-HMC921LP4E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 130007-HMC921LP4E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 130007-HMC921LP4E?
For technical support, including 130007-HMC921LP4E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 130007-HMC921LP4E requirements.
6.How does Aetrix verify that 130007-HMC921LP4E is sourced from the original manufacturer or authorized distributors?
All 130007-HMC921LP4E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 130007-HMC921LP4E meets industry standards.
7.What is the process for return or replacement of 130007-HMC921LP4E?
All 130007-HMC921LP4E units undergo pre-shipment inspection (PSI). If there is an issue with 130007-HMC921LP4E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 130007-HMC921LP4E part is unused and in its original packaging.
Return procedure for 130007-HMC921LP4E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
130007-HMC921LP4E Tags
-
113991054
Seeed Technology Co., Ltd
-
SC0918
Raspberry Pi
-
113991114
Seeed Technology Co., Ltd
-
ESP32-C6-DEVKITM-1-N4
Espressif Systems
-
ESP32-DEVKITM-1
Espressif Systems
-
C008
M5Stack Technology Co., Ltd.
-
ESP32-C3-DEVKITC-02
Espressif Systems
-
ESP32-C6-DEVKITC-1-N8
Espressif Systems
-
DFR0478
DFRobot
-
102010448
Seeed Technology Co., Ltd
-
ESP32-DEVKITC-32E
Espressif Systems
-
ESP32-DEVKITC-32UE
Espressif Systems
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
