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Analog Devices Inc. 130008-HMC921LP4E

Part No.:
130008-HMC921LP4E
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
Aetrix130008-HMC921LP4E.pdf
Description:
BOARD EVAL HMC921LP4E 1900MHZ
Quantity:
Payment:
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Shipping:
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Inventory:2,124

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Product details

Overview

HMC921LP4E from Analog Devices (formerly Hittite Microwave) is a GaAs HBT MMIC power amplifier optimized for RF transmit stages in broadband wireless infrastructure. It delivers +33 dBm P1dB output power, 16 dB gain at 900 MHz, and +48 dBm output IP3 across 0.4–2.7 GHz while operating from a single +5 V supply in a RoHS-compliant 4×4 mm QFN package. It serves as a high-efficiency driver stage in cellular base station transceivers and microwave radio front-ends.

For engineers reviewing the HMC921LP4E datasheet, HMC921LP4E pinout, HMC921LP4E application, or HMC921LP4E equivalent, key selection criteria include its adjustable bias current (400 mA / 700 mA modes), 32% PAE at P1dB, dual-band gain stability, and compatibility with 50 Ω RF system interfaces in LTE, WiMAX, and fixed wireless designs.

Technical Context

The HMC921LP4E employs a two-stage GaAs HBT architecture with integrated input/output matching networks, enabling operation over 0.4–2.7 GHz without external tuning components. Its bias is controlled via a single external resistor to set quiescent current between 400 mA and 700 mA, directly affecting linearity (IP3), gain, and PAE trade-offs.

It features on-chip DC blocking and RF coupling, supports 50 Ω input/output impedance, and maintains stable gain variation of ≤0.01 dB/°C across temperature. The device exhibits >6 dB output return loss and >9 dB input return loss in both bias modes, ensuring robust system integration with minimal matching circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 0.4–2.7 GHz - Full-band operation covers cellular (700/800/900 MHz), PCS (1.8–1.9 GHz), AWS (2.1 GHz), and 2.6 GHz LTE bands.
Small-Signal Gain 16 dB @ 900 MHz - Enables single-stage amplification without cascading; gain remains ≥9 dB across full band.
P1dB Output Power +33 dBm typ. @ 900 MHz - Delivers 2 W saturated RF output suitable for driver-stage applications in macro/micro base stations.
Output IP3 +48 dBm typ. @ 400 mA - Supports high-linearity modulation schemes (e.g., 64-QAM) with low ACPR in multi-carrier systems.
Power Added Efficiency 32% @ +33 dBm Pout - Reduces thermal load and power supply demand in densely packed RF modules.
Supply Voltage +5 V single supply - Simplifies power architecture; eliminates need for negative or multiple rail supplies.
Bias Current Range 400 mA or 700 mA (via R1) - Allows design trade-off between linearity (700 mA) and efficiency (400 mA).

Pinout & Package

Package: 24-lead, 4×4 mm, RoHS-compliant leadless QFN (LCC) with exposed thermal pad. Pin pitch: 0.5 mm. Thermal resistance (θJA) = 35°C/W.

Pin/Terminal Circuit Role Design Meaning
VCC1, VCC2 Positive supply inputs Two independent +5 V supply pins for stage isolation and noise decoupling; each requires local 100 nF + 10 µF bypassing.
VEN Enable control Active-high digital enable; ties to +5 V for operation, grounded for shutdown (Iq < 10 µA).
RFIN RF input 50 Ω matched input port; DC-coupled, requires external AC coupling if source is DC-biased.
RFOUT RF output 50 Ω matched output port; DC-coupled, requires external AC coupling before antenna or next stage.
VDET Power detector output Analog voltage proportional to output power (e.g., ~1.2 V @ +33 dBm); used for closed-loop power control.
GND Ground terminals 20 dedicated ground pins including thermal pad - mandatory solder connection for thermal and RF performance.

Key Features

Feature Design Value
Adjustable quiescent current Set via single external resistor (270 Ω → 400 mA; 130 Ω → 700 mA), enabling optimization for linearity vs. efficiency per application.
Integrated matching networks Eliminates external input/output matching components across 0.4–2.7 GHz, reducing BOM count and board area.
On-chip power detector VDET pin provides monotonic analog voltage output correlated to RF output power, supporting real-time transmit power monitoring.
High reverse isolation ≥30 dB typical from 0.4–2.7 GHz - minimizes load-pull effects and improves stability in mismatched antenna environments.
Temperature-stable gain Gain variation ≤0.01 dB/°C - ensures consistent RF link budget across industrial temperature range (−40°C to +85°C).

Applications

Cellular Base Station Driver Fixed Wireless Access Transmitter

Use Scenario: Final driver stage in 4G/LTE macro base station remote radio head (RRH), amplifying uplink signal before PA final stage.

IC Role / Device Role / Timing Role: High-linearity RF power amplifier providing 2 W output drive with low ACPR for multi-carrier OFDMA signals.

Use Value: +48 dBm IP3 and 32% PAE enable compliant spectral mask performance at full output without external predistortion.

Use Scenario: Transmit amplifier in point-to-multipoint (PMP) fixed wireless CPE operating in 3.5 GHz band with 20 MHz channel bandwidth.

IC Role / Device Role / Timing Role: Broadband driver amplifier delivering stable gain and return loss across 3.4–3.8 GHz after frequency translation.

Use Value: 0.4–2.7 GHz coverage allows reuse of same part across sub-6 GHz bands; 4×4 mm QFN enables compact RF module layout.

WiMAX Subscriber Unit Microwave Radio IF/RF Stage

Use Scenario: Transmit chain amplifier in IEEE 802.16e mobile WiMAX subscriber unit operating at 2.5–2.7 GHz.

IC Role / Device Role / Timing Role: Linear gain block boosting modulated signal prior to antenna switch and filter network.

Use Value: 16 dB gain at 2.6 GHz and >9 dB input return loss simplify impedance matching and reduce sensitivity to front-end component tolerances.

Use Scenario: Intermediate-frequency or low-band RF driver in licensed 6–11 GHz microwave backhaul radios using heterodyne architecture.

IC Role / Device Role / Timing Role: Wideband amplifier operating at first IF (e.g., 700 MHz) or L-band (1.5 GHz) to drive mixer or upconverter.

Use Value: Flat gain response and low noise figure (≤8.5 dB) preserve SNR in cascaded receiver/transmitter chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Qorvo QPA2211 Wider bandwidth (0.7–2.8 GHz), higher Psat (+35 dBm), but requires dual +5 V/+28 V supplies and larger 5×5 mm package. Targeted at higher-power macro base station final stages; not drop-in compatible due to supply and footprint differences. Choose QPA2211 only when >2 W output and higher voltage headroom are required; HMC921LP4E better suits space-constrained driver applications.
Analog Devices HMC920LP4E Complementary low-noise amplifier (LNA) in identical 4×4 mm QFN package; shares pinout except for VCC/VEN polarity and gain profile. Used in receive path; not functionally interchangeable - differs in bias topology, gain, and linearity targets. Select HMC920LP4E only for receive-chain amplification; HMC921LP4E is strictly transmit-oriented with optimized P1dB/IP3.

Compared with QPA2211 and HMC920LP4E, the HMC921LP4E uniquely balances 2 W output, single +5 V operation, and 4×4 mm footprint for driver-stage integration-making it optimal where board space, supply simplicity, and linearity are jointly constrained.

Availability

HMC921LP4E is available at Aetrix Electronics and suitable for cellular infrastructure, fixed wireless access, and microwave radio applications requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for HMC921LP4E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices acquired Hittite Microwave in 2014 and maintains its high-frequency RF product portfolio, specializing in GaAs, GaN, and SiGe solutions for communications and defense markets.

The HMC921LP4E belongs to the Hittite HMC amplifier family designed specifically for broadband wireless infrastructure driver stages, emphasizing linearity, thermal stability, and ease of integration in compact RF modules.

FAQ

What is the recommended PCB layout for thermal management of the HMC921LP4E?

Thermal performance depends critically on soldering the exposed thermal pad to a minimum 100 mm² copper pour with ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner ground planes. The HMC921LP4E datasheet specifies θJA = 35°C/W under these conditions; insufficient thermal relief causes gain compression and reliability degradation above +85°C ambient.

Does the HMC921LP4E require external input/output matching components?

No - the HMC921LP4E integrates broadband input/output matching networks optimized for 50 Ω systems across 0.4–2.7 GHz. External matching is unnecessary for standard operation; however, discrete LC networks may be added for narrowband optimization or harmonic suppression per application requirements.

How does bias current adjustment affect ACPR performance in CDMA/LTE signals?

At 700 mA bias, the HMC921LP4E achieves lower ACPR (e.g., −72 dBc for CDMA 2000 at 1960 MHz) due to improved linearity and higher IP3; at 400 mA, ACPR degrades by ~3–5 dB but PAE increases by ~5 percentage points. System-level testing with actual waveforms is required to select optimal R1 value.

Can the VDET pin of the HMC921LP4E be used for closed-loop power control?

Yes - the VDET pin provides a temperature-compensated analog voltage linearly proportional to RF output power (e.g., ~0.5 V at +20 dBm, ~1.2 V at +33 dBm). When interfaced with an ADC and controller, it enables real-time feedback for automatic level control (ALC) loops in the HMC921LP4E-based transmit chain.

Is the HMC921LP4E pin-compatible with other devices in the HMC LP4E series?

No - while the HMC921LP4E shares the 4×4 mm QFN-24 package outline with other LP4E-series amplifiers (e.g., HMC920LP4E), pin functions differ significantly: VCC1/VCC2 locations, enable polarity, and VDET presence are unique to the HMC921LP4E. Direct replacement requires schematic and layout revision.

130008-HMC921LP4E Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Box
Product Status:
Active
Type:
Amplifier
Frequency:
1.9GHz
Contents:
Board(s)
Utilized IC / Part:
HMC921LP4E

130008-HMC921LP4E FAQ

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The price and inventory of 130008-HMC921LP4E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 130008-HMC921LP4E is usually 5 days.

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6.How does Aetrix verify that 130008-HMC921LP4E is sourced from the original manufacturer or authorized distributors?

All 130008-HMC921LP4E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 130008-HMC921LP4E meets industry standards.

7.What is the process for return or replacement of 130008-HMC921LP4E?

All 130008-HMC921LP4E units undergo pre-shipment inspection (PSI). If there is an issue with 130008-HMC921LP4E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 130008-HMC921LP4E part is unused and in its original packaging.

Return procedure for 130008-HMC921LP4E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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