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Analog Devices Inc. 130560-HMC863LP4E
- Part No.:
- 130560-HMC863LP4E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
130560-HMC863LP4E.pdf
- Description:
- BOARD EVAL HMC863LP4E
- Quantity:
- Payment:
- Shipping:
Inventory:3,331
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Product details
Overview
HMC863LP4E from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT MMIC ½-Watt linear power amplifier operating from 22 to 26.5 GHz, delivering 21.5 dB gain, +27.5 dBm saturated output power at 15% PAE under +6 V/350 mA bias, with +33 dBm output IP3 - designed for high-linearity RF front-ends in millimeter-wave point-to-point radios and VSAT terminals.
For engineers reviewing the HMC863LP4E datasheet, HMC863LP4E pinout, HMC863LP4E application, or HMC863LP4E equivalent, key selection criteria include its 22–26.5 GHz bandwidth, DC-blocked 50 Ω matched I/Os, no external matching requirement, thermal performance up to +85 °C, and compatibility with 5 V or 6 V supply operation while maintaining >+24.5 dBm P1dB.
Technical Context
The HMC863LP4E implements a three-stage monolithic GaAs pHEMT architecture optimized for Ka-band linear amplification. It integrates internal biasing networks requiring only external gate voltage (Vg) adjustment to set 350 mA drain current, with dedicated Vd (pin 20) and Vg (pin 23) supply paths decoupled via 100 pF / 0.1 µF / 4.7 µF capacitors.
All RF I/Os are DC-blocked and impedance-matched to 50 Ω; pins 1,2,4–7,12–15,17–19,24 serve as ground connections tied directly to PCB RF ground, while pins 8–11 are NC but must be externally grounded per measurement conditions. Thermal resistance is 26.9 °C/W (channel-to-paddle), supporting operation from –55 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 22–26.5 GHz - fully specified band for gain, power, and linearity; usable in Ka-band satellite and terrestrial links. |
| Small-Signal Gain | 21.5 dB typical - enables single-stage amplification without cascading, reducing system complexity and noise figure impact. |
| Sat. Output Power (Psat) | +27.5 dBm @ 15% PAE - delivers ½ W RF output with efficient DC-to-RF conversion at +6 V/350 mA. |
| OIP3 | +33 dBm - supports high-order modulation (e.g., 256-QAM) in interference-limited environments like dense point-to-multipoint networks. |
| P1dB | +24.5 dBm typical - defines usable linear dynamic range before 1 dB compression; stable across temperature (±0.032 dB/°C gain drift). |
| Input/Output Return Loss | 11 dB / 15 dB - ensures <–11 dB reflection at input and <–15 dB at output, minimizing VSWR-induced instability in 50 Ω systems. |
| Supply Voltage Range | +5 V to +6 V - maintains functional operation with only minor Psat/IP3 degradation at 5 V, easing system-level power rail design. |
Pinout & Package
Package: 24-lead 4×4 mm SMT plastic package (RoHS-compliant low-stress molded), MSL1 rated, with exposed ground paddle requiring solder connection to PCB RF ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4–7, 12–15, 17–19, 24 | GND | RF/DC ground connections; all must be soldered to PCB ground plane with multiple vias for low-inductance return path. |
| 3 | RFIN | AC-coupled 50 Ω matched RF input; requires no external matching network for broadband Ka-band operation. |
| 8–11 | N/C | No internal connection; externally grounded per test setup to maintain RF shielding and thermal symmetry. |
| 16 | RFOUT | AC-coupled 50 Ω matched RF output; delivers +27.5 dBm Psat into 50 Ω load with minimal external components. |
| 20 | Vd | Drain bias supply; requires 100 pF / 0.1 µF / 4.7 µF decoupling to suppress supply noise and prevent oscillation. |
| 23 | Vg | Gate control terminal; adjusted to set Idd = 350 mA (typical); same decoupling required as Vd for stable bias point. |
Key Features
| Feature | Design Value |
|---|---|
| No external matching required | DC-blocked, 50 Ω matched RFIN and RFOUT simplify PCB layout and reduce component count in Ka-band modules. |
| High linearity (OIP3 = +33 dBm) | Enables clean spectral regrowth performance in multi-carrier and wideband applications such as VSAT uplinks. |
| Thermally robust construction | 26.9 °C/W channel-to-paddle thermal resistance and –55 °C to +85 °C operating range support uncooled outdoor deployments. |
| Flexible biasing (5–6 V) | Operates across 5 V and 6 V rails with predictable P1dB and IP3 trade-offs, easing integration into mixed-voltage RF subsystems. |
| ESD-hardened (HBM Class 0, 150 V) | Robust handling during assembly; requires standard ESD precautions but tolerates higher static discharge than typical GaAs MMICs. |
Applications
| Point-to-Point Radios | VSAT Terminals |
|---|---|
|
Use Scenario: High-capacity backhaul links operating in licensed 23–26 GHz spectrum between cell towers or enterprise sites. IC Role / Device Role / Timing Role: Final-stage power amplifier in transmit chain, boosting modulated signal to antenna feed. Use Value: Delivers +24.5 dBm P1dB and +33 dBm OIP3 to sustain 1024-QAM over 1 km+ links with low adjacent-channel interference. |
Use Scenario: Ku/Ka-band satellite communication terminals for enterprise or maritime broadband access. IC Role / Device Role / Timing Role: Transmit power amplifier in outdoor unit (ODU), driving horn antenna after upconversion. Use Value: 22–26.5 GHz coverage matches ITU Ka-band allocations; +27.5 dBm Psat meets EIRP regulatory limits without external PA stages. |
| Point-to-Multi-Point Base Stations | Military Tactical Radios |
|
Use Scenario: Sectorized base stations serving multiple subscriber units in fixed wireless access (FWA) networks. IC Role / Device Role / Timing Role: Per-sector PA enabling spatial reuse and frequency division across beamformed sectors. Use Value: 21.5 dB gain and flat gain response (<±0.5 dB over band) ensure consistent link budget across all users in sector. |
Use Scenario: Manpack or vehicle-mounted secure data radios operating in contested electromagnetic environments. IC Role / Device Role / Timing Role: High-reliability transmit amplifier in ruggedized RF front-end module. Use Value: –55 °C to +85 °C operation and MSL1 packaging support field deployment; +33 dBm OIP3 resists intermodulation in jamming scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Ka-band power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | 22–26.5 GHz, +28 dBm Psat, +32 dBm OIP3, 20 dB gain, requires external matching networks. | Higher Psat but lower gain and no integrated 50 Ω match; suited for designs with custom impedance tuning. | Select QPA2211 when maximum output power is prioritized over board space and matching simplicity. |
| MACOM MAAP-015000 | 22–26.5 GHz, +26.5 dBm Psat, +31 dBm OIP3, 22 dB gain, 5 V only, no Vg bias adjustment needed. | Fixed-bias architecture simplifies control but reduces bias optimization flexibility vs. HMC863LP4E's adjustable Vg. | Choose MAAP-015000 for plug-and-play 5 V systems where gate tuning is unnecessary and 1 dB Psat margin is acceptable. |
Compared with QPA2211 and MAAP-015000, the HMC863LP4E uniquely combines integrated 50 Ω matching, adjustable gate bias for current optimization, and balanced linearity–efficiency trade-off across both 5 V and 6 V rails - making it optimal for rapid prototyping and production of compact Ka-band transmitters.
Availability
HMC863LP4E is available at Aetrix Electronics and suitable for point-to-point radios, VSAT terminals, and military communications systems requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for HMC863LP4E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and leads in high-performance RF, microwave, and mmWave ICs for communications, defense, and instrumentation.
The HMC863LP4E belongs to Hittite's legacy GaAs pHEMT MMIC amplifier family, engineered specifically for Ka-band infrastructure applications demanding high gain, linearity, and thermal resilience in compact SMT packages.
FAQ
What is the recommended gate voltage (Vg) setting for HMC863LP4E to achieve 350 mA drain current?
The HMC863LP4E requires Vg adjustment between –2 V and 0 V to set Idd = 350 mA at +6 V drain supply. Typical Vg is –0.7 V to –1.0 V depending on unit variation and temperature; use a precision bias controller and monitor Idd directly. The HMC863LP4E datasheet specifies this range in Note [1] of the Electrical Specifications table.
Can HMC863LP4E operate reliably at 5 V, and how does performance change versus 6 V operation?
Yes, the HMC863LP4E operates at +5 V with only slight degradation: P1dB drops ~0.5 dB and OIP3 decreases ~0.8 dB compared to +6 V/350 mA operation. The HMC863LP4E maintains full 22–26.5 GHz functionality and thermal stability at 5 V, making it viable for systems constrained to lower supply rails.
Is external RF matching required for HMC863LP4E input and output ports?
No - the HMC863LP4E features DC-blocked, internally matched 50 Ω RFIN (pin 3) and RFOUT (pin 16). No external matching components are needed for nominal operation across 22–26.5 GHz, significantly simplifying layout and reducing insertion loss in Ka-band signal chains.
What thermal management practices are required for sustained operation of HMC863LP4E?
The HMC863LP4E requires soldering of its exposed ground paddle and all GND pins (1,2,4–7,12–15,17–19,24) to a multilayer PCB ground plane with ≥8 thermal vias (0.3 mm diameter) under the paddle. For continuous +85 °C ambient operation, a copper heatsink or thermal pad is recommended due to its 26.9 °C/W channel-to-paddle resistance.
Does HMC863LP4E support pulsed RF operation, and what are the absolute maximum ratings for transient conditions?
The HMC863LP4E is rated for continuous wave (CW) operation only. Its absolute maximum RF input power is +26 dBm; exceeding this risks permanent damage. Transient overvoltage on Vd (>6.3 V) or channel temperature (>150 °C) also violates absolute ratings. Pulse operation is not characterized or guaranteed - use only within DC bias and RF envelope limits specified in the HMC863LP4E datasheet.
130560-HMC863LP4E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 22GHz ~ 26.5GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC863LP4E
130560-HMC863LP4E FAQ
1.How can I place an order for 130560-HMC863LP4E through Aetrix?
Please submit a Request for Quotation (RFQ) for 130560-HMC863LP4E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 130560-HMC863LP4E reliable?
The price and inventory of 130560-HMC863LP4E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 130560-HMC863LP4E is usually 5 days.
3.What payment methods are accepted for 130560-HMC863LP4E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 130560-HMC863LP4E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 130560-HMC863LP4E?
130560-HMC863LP4E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 130560-HMC863LP4E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 130560-HMC863LP4E?
For technical support, including 130560-HMC863LP4E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 130560-HMC863LP4E requirements.
6.How does Aetrix verify that 130560-HMC863LP4E is sourced from the original manufacturer or authorized distributors?
All 130560-HMC863LP4E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 130560-HMC863LP4E meets industry standards.
7.What is the process for return or replacement of 130560-HMC863LP4E?
All 130560-HMC863LP4E units undergo pre-shipment inspection (PSI). If there is an issue with 130560-HMC863LP4E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 130560-HMC863LP4E part is unused and in its original packaging.
Return procedure for 130560-HMC863LP4E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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