Analog Devices Inc. 130812-HMC907LP5E
- Part No.:
- 130812-HMC907LP5E
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
130812-HMC907LP5E.pdf
- Description:
- EVAL BOARD FOR HMC907LP5E
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
HMC907LP5E from Analog Devices (formerly Hittite Microwave) is a GaAs pHEMT MMIC distributed power amplifier operating from 0.2 to 22 GHz, delivering +26 dBm P1dB output power, 12 dB small-signal gain, and +36 dBm output IP3 at +10 V/350 mA supply. It serves as a broadband RF driver stage in EW, radar, and test instrumentation signal chains.
For engineers reviewing the HMC907LP5E datasheet, HMC907LP5E pinout, HMC907LP5E application, or HMC907LP5E equivalent, key selection criteria include its 0.2–22 GHz bandwidth, internal 50 Ω I/O matching, ±0.7 dB gain flatness, leadless 32-lead 5×5 mm QFN package, and suitability for high-linearity microwave transmitters requiring minimal external components.
Technical Context
The HMC907LP5E employs a distributed amplifier architecture with cascaded GaAs pHEMT gain stages, enabling ultra-wideband operation without frequency-dependent tuning networks. Its self-biased design eliminates gate bias circuitry, while internal DC blocking on RFIN and integrated 50 Ω terminations simplify system integration into MCMs and PCB-based RF front-ends.
Thermal management relies on the exposed ground paddle (15.9 °C/W channel-to-ground thermal resistance) and mandatory soldering of all ground pins and paddle to PCB RF ground. Operation is specified from –55 °C to +85 °C, with absolute maximum Vdd = +11 Vdc and ESD sensitivity rated Class 1A (HBM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 0.2–22 GHz continuous bandwidth - supports single amplifier in multi-band EW, radar, and test systems without band switching. |
| P1dB Output Power | +26 dBm typical at 25 °C - delivers sufficient drive level for subsequent mixer or antenna interface stages in high-dynamic-range receivers/transmitters. |
| Small-Signal Gain | 12 dB typical - provides stable gain margin across full band, reducing need for external gain control or compensation networks. |
| Output IP3 | +36 dBm typical - enables high two-tone linearity in dense spectral environments such as ECM and broadband comms. |
| Gain Flatness | ±0.7 dB over 0.2–22 GHz - ensures consistent signal amplitude response without per-frequency calibration in swept test equipment. |
| Supply Requirement | +10 V @ 350 mA - low-voltage, moderate-current operation compatible with standard RF system power rails and reduces thermal load vs. higher-Vdd alternatives. |
| Noise Figure | 3.5 dB typical - balances linearity and noise performance for driver-stage placement after LNA or before mixer. |
| Package | 32-lead 5×5 mm leadless QFN - surface-mountable, thermally enhanced package with exposed paddle for direct PCB heat sinking. |
Pinout & Package
Package: 32-lead, 5×5 mm, RoHS-compliant leadless QFN with exposed metal ground paddle (alumina body, matte Sn plating, MSL1). Requires soldering of all ground pins and paddle to PCB RF ground plane using ≥8 thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 6, 8, 9, 16, 17, 20, 22, 24, 25, 32 | GND | RF/DC ground connection points - must be connected to PCB ground plane; paddle is primary thermal path. |
| 2, 3, 7, 10–15, 18, 19, 23, 26–31 | N/C | No internal connection - externally grounded per layout best practice to maintain RF shielding and grounding integrity. |
| 5 | RFIN | DC-coupled 50 Ω input - requires external DC blocking capacitor; no internal bias network. |
| 21 | RFOUT & Vdd | Combined RF output and drain bias node - Vdd applied via broadband bias tee or external LC network; RF signal exits here. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-Wideband Operation | 0.2–22 GHz continuous coverage - replaces multiple narrowband amplifiers in EW and test systems, reducing BOM count and calibration complexity. |
| Internally Matched I/O | 50 Ω input and output impedance - eliminates discrete matching networks, saving board space and insertion loss in MCM and compact RF modules. |
| Self-Biased Architecture | No external gate bias required - simplifies power sequencing and reduces component count versus dual-supply GaAs amplifiers. |
| High Linearity | +36 dBm OIP3 and +26 dBm P1dB - maintains signal fidelity under multi-tone conditions in radar pulse compression and wideband digital modulation. |
| Thermally Optimized Package | 15.9 °C/W channel-to-paddle thermal resistance - enables reliable operation at full RF power with standard PCB copper pour and thermal vias. |
| ESD-Robust Design | Class 1A HBM rating - withstands handling in production environments without special ESD precautions beyond standard Class 1A protocols. |
Applications
| Electronic Warfare (EW) Receivers | Radar Transmitter Driver |
|---|---|
|
Use Scenario: Wideband signal acquisition and jamming synthesis across HF through K-band. IC Role / Device Role / Timing Role: Final IF or RF driver amplifier in broadband receiver front-end and exciter chain. Use Value: ±0.7 dB gain flatness and +36 dBm IP3 ensure accurate amplitude and phase response across threat signal bandwidths without per-band recalibration. |
Use Scenario: High-power excitation of T/R modules in active electronically scanned array (AESA) radar systems. IC Role / Device Role / Timing Role: Medium-power driver stage preceding GaN final PA, operating from L- to K-band. Use Value: +26 dBm P1dB and 12 dB gain provide sufficient headroom to drive high-input-P1dB GaN PAs while maintaining spectral purity under pulsed RF conditions. |
| Automated Test Equipment (ATE) | Fiber-Optic RF-over-Fiber Links |
|
Use Scenario: Signal generation and stimulus response testing in vector network analyzers and spectrum analyzer front-ends. IC Role / Device Role / Timing Role: Calibration reference amplifier and broadband sweep source driver. Use Value: Stable gain and return loss (15 dB input, 13 dB output RL) minimize measurement uncertainty across 0.2–22 GHz sweep ranges. |
Use Scenario: RF signal conditioning prior to optical modulation in analog RF-over-fiber transmission systems. IC Role / Device Role / Timing Role: Linear driver for Mach-Zehnder modulator bias point stabilization and distortion suppression. Use Value: Low noise figure (3.5 dB) and high OIP3 preserve CNR and SFDR in multi-channel CATV and 5G fronthaul links. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar broadband RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Qorvo QPA2211 | 0.1–20 GHz, +27 dBm P1dB, +38 dBm IP3, +12 V/320 mA, 5×5 mm QFN - slightly wider low-end range but narrower high-end coverage. | Better suited for sub-20 GHz telecom infrastructure where lower-frequency extension is critical; less optimal above 20 GHz. | Select QPA2211 when system bandwidth is capped at 20 GHz and lower-frequency gain stability below 0.2 GHz is required. |
| MACOM MAAP-011024 | 0.01–20 GHz, +25 dBm P1dB, +35 dBm IP3, +8 V/450 mA, 7×7 mm QFN - broader LF extension but larger footprint and higher current draw. | Preferred for military comms radios needing DC–20 GHz coverage; less suitable for space-constrained 22 GHz test equipment. | Choose MAAP-011024 only if DC–0.1 GHz operation is mandatory and PCB area allows 7×7 mm package. |
Compared with QPA2211 and MAAP-011024, the HMC907LP5E uniquely balances 22 GHz upper-frequency reach, compact 5×5 mm footprint, and optimized +10 V supply efficiency - making it the preferred choice for K-band test instrumentation and wideband EW systems where size and high-end bandwidth are critical.
Availability
HMC907LP5E is available at Aetrix Electronics and suitable for electronic warfare systems, radar transmitter chains, and automated test equipment requiring stable component supply, traceable lot history, and long-term lifecycle support.
Supply support for HMC907LP5E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Hittite Microwave in 2014 and integrates its high-frequency RF/Microwave portfolio into precision analog and RF solutions for defense, aerospace, and communications.
The HMC907LP5E belongs to Analog Devices' legacy Hittite MMIC amplifier product line, engineered specifically for wideband, high-linearity RF signal chain applications in defense electronics and instrumentation.
FAQ
What is the operating temperature range for the HMC907LP5E?
The HMC907LP5E is specified for operation from –55 °C to +85 °C ambient. Its thermal design-featuring a 15.9 °C/W channel-to-ground thermal resistance and exposed paddle-enables reliable performance at full RF output power within this range when mounted with adequate PCB copper pour and thermal vias. The HMC907LP5E must not exceed 150 °C channel temperature under any condition.
Does the HMC907LP5E require external DC blocking capacitors?
Yes, the HMC907LP5E requires an external DC blocking capacitor on the RFIN pin (Pin 5), as this input is DC-coupled and internally matched to 50 Ω. The RFOUT/Vdd pin (Pin 21) also requires external bias network isolation; a broadband bias tee or LC network is recommended to separate DC supply from RF output path. No internal blocking is provided.
Can the HMC907LP5E be used with a +12 V supply?
No-the absolute maximum drain bias voltage (Vdd) for the HMC907LP5E is +11 Vdc. Operation at +12 V exceeds this rating and risks permanent device damage. The HMC907LP5E is characterized and optimized for +8 V to +11 V, with nominal performance at +10 V/350 mA. Derating curves for gain, P1dB, and IP3 vs. Vdd are provided in the datasheet.
Is the HMC907LP5E pin-compatible with other Hittite 5×5 mm QFN amplifiers?
No documented pin-compatible replacements exist within the Hittite/Analog Devices portfolio. While several amplifiers share the 32-lead 5×5 mm QFN outline (e.g., HMC906LP5E), their pin functions-including RFIN, RFOUT, and bias node assignments-differ. The HMC907LP5E's unique Pin 21 RFOUT&Vdd configuration and Pin 5 RFIN location require dedicated layout; PCB redesign is necessary for substitution.
What is the ESD sensitivity classification of the HMC907LP5E?
The HMC907LP5E is classified as Class 1A per Human Body Model (HBM), with ESD withstand capability of ≤250 V. This mandates strict ESD handling: use grounded wrist straps, conductive foam storage, and ionized air workstations during assembly and test. The HMC907LP5E's GaAs pHEMT process is inherently sensitive, and exposure beyond Class 1A limits may cause latent or immediate parametric degradation.
130812-HMC907LP5E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Amplifier
- Frequency:
- 200MHz ~ 22GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC907LP5E
130812-HMC907LP5E FAQ
1.How can I place an order for 130812-HMC907LP5E through Aetrix?
Please submit a Request for Quotation (RFQ) for 130812-HMC907LP5E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 130812-HMC907LP5E reliable?
The price and inventory of 130812-HMC907LP5E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 130812-HMC907LP5E is usually 5 days.
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Once your 130812-HMC907LP5E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 130812-HMC907LP5E?
For technical support, including 130812-HMC907LP5E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 130812-HMC907LP5E requirements.
6.How does Aetrix verify that 130812-HMC907LP5E is sourced from the original manufacturer or authorized distributors?
All 130812-HMC907LP5E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 130812-HMC907LP5E meets industry standards.
7.What is the process for return or replacement of 130812-HMC907LP5E?
All 130812-HMC907LP5E units undergo pre-shipment inspection (PSI). If there is an issue with 130812-HMC907LP5E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 130812-HMC907LP5E part is unused and in its original packaging.
Return procedure for 130812-HMC907LP5E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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