Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N2977BE3

Part No.:
1N2977BE3
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-203AA, DO-4, Stud
Datasheet:
Aetrix1N2977BE3.pdf
Description:
DIODE ZENER 13V 10W DO4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,738

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N2977BE3 from Microsemi is a 10 W, 13 V Zener diode in DO-213AA (DO-4) hermetically sealed metal-glass package, qualified to MIL-PRF-19500/124 JANTX level, with ±5% voltage tolerance, 190 Ω dynamic impedance at 3 mA test current, and junction temperature range of –65 °C to +175 °C. It regulates voltage in high-reliability power supply and reference circuits across military, aerospace, and industrial systems.

For engineers reviewing the 1N2977BE3 datasheet, 1N2977BE3 pinout, 1N2977BE3 application, or 1N2977BE3 equivalent, this page delivers verified electrical specs, stud-mount terminal configuration, thermal derating behavior, RoHS-compliant matte-tin plating, and military-grade qualification evidence - all critical for high-stability voltage reference design and obsolescence-resilient sourcing.

Technical Context

This device operates as a precision voltage reference by maintaining stable reverse breakdown at 13 V ±5% under regulated current (IZT = 3 mA), with low dynamic impedance (ZZT = 190 Ω) ensuring minimal output variation under load transients. Its hermetically sealed DO-4 package enables operation up to +175 °C junction temperature and supports direct stud mounting to heatsinks.

Thermal resistance from junction to case is fixed at 12 °C/W, enabling predictable power derating above +55 °C (0.083 W/°C). The anode-to-stud polarity and tin-lead–free matte-tin plating (e3 suffix) meet RoHS requirements for commercial-grade units while preserving solderability at 260 °C for 10 seconds.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)13 V ±5% at IZT = 3 mA - defines nominal regulation point with tight tolerance for reference stability
Power Dissipation (PD)10 W @ TC = +55 °C - maximum continuous power before thermal derating begins
Dynamic Impedance (ZZT)190 Ω @ IZT = 3 mA - low AC impedance ensures minimal voltage shift during current ripple
Junction Temperature Range–65 °C to +175 °C - supports operation in extreme environmental conditions without parameter drift
Thermal Resistance (RθJC)12 °C/W - enables accurate thermal modeling when mounted to heatsink via stud
Forward Voltage (VF)1.5 V @ 2.0 A - specifies forward conduction loss during transient clamping or bidirectional use
Reverse Leakage (IR)10 µA @ VR = 9.9 V - confirms low off-state current for high-impedance bias networks

Pinout & Package

Package: DO-213AA (DO-4), hermetically sealed metal-glass stud-mount case with 10-32 UNF–2A threaded stud (anode connection), 7/16″ hex body, ~7.5 g mass, and RoHS-compliant matte-tin plating over nickel.

Pin/TerminalCircuit RoleDesign Meaning
Stud (Threaded Body)AnodePrimary current-carrying terminal; must be electrically connected to heatsink or chassis ground for thermal management and circuit return path
Top Cap / DomeCathodeSecondary terminal; soldered or clamped to PCB trace or wire; polarity confirmed by cathode band on cap surface

Key Features

FeatureDesign Value
Hermetic metal-glass sealPrevents moisture ingress and long-term parameter drift in humid or corrosive environments
MIL-PRF-19500/124 JANTX qualificationValidated reliability for mission-critical applications including avionics and defense electronics
Anode-to-stud polarityEnables direct thermal coupling to heatsink while maintaining correct circuit orientation in series-shunt regulator topologies
RoHS-compliant e3 suffixMatte-tin plating meets lead-free assembly requirements without compromising solder joint integrity or corrosion resistance
Nonsensitive to ESD (MIL-STD-750 Method 1020)Eliminates need for special handling or protection circuits during board assembly and field service

Applications

High-Voltage Power Supply ReferenceAerospace Voltage Clamp

Use Scenario: Stabilizing feedback node in 28 V DC-DC converter for satellite power bus.

IC Role / Device Role / Timing Role: Zener reference element providing precise 13 V setpoint for error amplifier input.

Use Value: ±5% tolerance and 190 Ω dynamic impedance ensure <±0.5% output regulation under 10–90% load steps.

Use Scenario: Overvoltage protection in avionics sensor interface with 15 V rail.

IC Role / Device Role / Timing Role: Shunt clamp limiting transient excursions above 13.65 V.

Use Value: 10 W power rating and –65 °C to +175 °C operation sustain clamping during extended thermal soak and cold-start conditions.

Industrial Process Controller BiasRadiation-Hardened Instrumentation

Use Scenario: Generating stable bias for analog front-end op-amps in oilfield downhole telemetry.

IC Role / Device Role / Timing Role: Precision voltage source for ADC reference divider network.

Use Value: Hermetic seal and radiation-hardened construction prevent parameter shift under neutron/gamma exposure in nuclear facilities.

Use Scenario: Reference stabilization in space-qualified data acquisition module exposed to total ionizing dose >100 krad(Si).

IC Role / Device Role / Timing Role: Primary voltage reference in radiation-tolerant analog subsystem.

Use Value: Inherent radiation hardness per Microsemi MicroNote 050 eliminates need for shielding or redundancy overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N2977BSame electrical specs but non-RoHS tin-lead plating; lacks e3 suffixNot suitable for lead-free manufacturing; requires Pb-containing solder processSelect only if legacy assembly line uses SnPb solder and RoHS compliance is not required
1N2977JANTXVIdentical 13 V Zener, same DO-4 package, but qualified to higher JANTXV reliability level with enhanced screeningRequired for Class V space or flight-critical programs where burn-in and lot acceptance testing are mandatedChoose when full MIL-PRF-19500/124 JANTXV certification and extended life test data are contractually required

Compared with 1N2977B and 1N2977JANTXV, the 1N2977BE3 provides RoHS-compliant plating without sacrificing regulation accuracy or thermal capability - making it optimal for new designs targeting commercial/military dual-use with lead-free assembly, while retaining full backward compatibility in form, fit, and function.

Availability

1N2977BE3 is available at Aetrix Electronics and suitable for high-reliability power supply reference, aerospace voltage clamp, and radiation-hardened instrumentation requiring stable component supply across extended temperature and lifecycle demands.

Supply support for 1N2977BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N2977BE3 belongs to Microsemi's legacy MIL-PRF-19500/124 qualified Zener diode family, designed specifically for voltage regulation in harsh-environment systems where long-term stability, hermetic sealing, and radiation tolerance are mandatory.

FAQ

What is the Zener voltage tolerance for the 1N2977BE3?

The 1N2977BE3 has a nominal Zener voltage of 13 V with a guaranteed tolerance of ±5%, measured at IZT = 3 mA. This tolerance is consistent across all units in the 1N2970B–1N3015B series and is verified per MIL-PRF-19500/124 test requirements. Tighter tolerances are available upon factory consultation but are not standard for the 1N2977BE3.

Does the 1N2977BE3 require external heat sinking?

Yes - the 1N2977BE3 must be mounted to a thermally conductive surface via its threaded stud to dissipate up to 10 W. With RθJC = 12 °C/W, even at ambient +55 °C, junction temperature exceeds safe limits without heatsinking. The stud serves as both anode and primary thermal path; insulating washers or bushings may be used if electrical isolation is needed.

Is the 1N2977BE3 compatible with lead-free reflow processes?

Yes - the "e3" suffix indicates RoHS-compliant matte-tin plating, qualified for soldering at 260 °C for 10 seconds. This matches IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for lead-free assembly. The 1N2977BE3 does not require pre-baking and is fully compatible with standard Pb-free reflow profiles.

What is the polarity configuration of the 1N2977BE3?

The 1N2977BE3 uses standard polarity: anode connected to the threaded stud, cathode at the top cap. This is confirmed in the nomenclature guide for the 1N2970B–1N3015B series. Reverse polarity variants (e.g., 1N2977BRB) exist but are distinct part numbers - the 1N2977BE3 is strictly anode-to-stud.

How does the 1N2977BE3 perform under radiation exposure?

The 1N2977BE3 exhibits inherent radiation hardness as documented in Microsemi MicroNote 050, with no significant parameter shift after total ionizing dose (TID) exposure exceeding 100 krad(Si). This stems from its hermetically sealed metal-glass construction and silicon die processing - making it suitable for space, nuclear, and high-altitude applications without additional shielding or derating.

1N2977BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-203AA, DO-4, Stud
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
13 V
Tolerance:
±5%
Power - Max:
10 W
Impedance (Max) (Zzt):
3 Ohms
Current - Reverse Leakage @ Vr:
10 µA @ 9.9 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 2 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Stud Mount
Supplier Device Package:
DO-4 (DO-203AA)

1N2977BE3 FAQ

1.How can I place an order for 1N2977BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N2977BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N2977BE3 reliable?

The price and inventory of 1N2977BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N2977BE3 is usually 5 days.

3.What payment methods are accepted for 1N2977BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N2977BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N2977BE3?

1N2977BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N2977BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N2977BE3?

For technical support, including 1N2977BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N2977BE3 requirements.

6.How does Aetrix verify that 1N2977BE3 is sourced from the original manufacturer or authorized distributors?

All 1N2977BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N2977BE3 meets industry standards.

7.What is the process for return or replacement of 1N2977BE3?

All 1N2977BE3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N2977BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N2977BE3 part is unused and in its original packaging.

Return procedure for 1N2977BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N2977BE3 Tags

  • 1N2977BE3
  • 1N2977BE3 PDF
  • 1N2977BE3 Datasheet
  • 1N2977BE3 Specifications
  • 1N2977BE3 Images
  • Microchip Technology
  • Microchip Technology 1N2977BE3
  • Buy 1N2977BE3
  • 1N2977BE3 Price
  • 1N2977BE3 Distributor
  • 1N2977BE3 Supplier
  • 1N2977BE3 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER