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Microchip Technology 1N3006RB

Part No.:
1N3006RB
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-203AA, DO-4, Stud
Datasheet:
Aetrix1N3006RB.pdf
Description:
DIODE ZENER 105V 10W DO4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,455

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Product details

Overview

1N3006RB from Microsemi is a 10 W hermetically sealed, stud-mounted Zener diode with nominal Zener voltage 105 V at 25 mA test current, ±5% tolerance, and reverse polarity (cathode-to-stud). It operates from –65 °C to +175 °C junction temperature and delivers stable voltage regulation in high-reliability power supply and overvoltage protection circuits for aerospace and defense systems.

For engineers reviewing the 1N3006RB datasheet, 1N3006RB pinout, 1N3006RB application, or 1N3006RB equivalent, key selection criteria include its DO-213AA (DO-4) metal-glass package, 12 °C/W junction-to-case thermal resistance, 75 mA maximum Zener current at 25 °C, +0.095 %/°C temperature coefficient, and MIL-PRF-19500/124 JANTXV qualification readiness.

Technical Context

This device functions as a precision voltage reference and shunt regulator in high-stability DC power conditioning. Its welded metal-glass construction ensures hermetic sealing and inherent radiation hardness per Microsemi MicroNote 050, while internal solder bond construction supports robust thermal cycling performance.

The 1N3006RB exhibits 75 Ω dynamic impedance at 25 mA (ZZT), 10 µA reverse leakage at 76 V (VR), and a forward voltage of 1.5 V at 2.0 A - enabling reliable clamping and regulation across wide current and temperature ranges without external biasing circuitry.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)105 V ±5% at IZT = 25 mA - defines regulated output voltage under standard test conditions
Power Dissipation (PD)10 W @ TC = +55 °C - sets maximum continuous thermal load at stud temperature
Junction-to-Case Thermal Resistance (RθJC)12 °C/W - determines temperature rise per watt dissipated; critical for heatsink sizing
Dynamic Impedance (ZZT)75 Ω @ 25 mA - indicates regulation stiffness; lower values improve line/load regulation
Temperature Coefficient (αVZ)+0.095 %/°C - quantifies voltage drift with temperature; enables compensation design
Reverse Leakage Current (IR)10 µA @ 76 V - defines minimum off-state current; impacts standby power loss
Forward Voltage (VF)1.5 V @ 2.0 A - specifies conduction drop during forward-biased fault conditions

Pinout & Package

Package: DO-213AA (DO-4), hermetically sealed metal-glass stud package with 10-32 UNF–2A threaded stud (anode/cathode polarity defined by suffix); weight ≈ 7.5 g; case temperature range –65 °C to +200 °C.

Pin/TerminalCircuit RoleDesign Meaning
Stud (Metal Body)CathodePrimary heat path and electrical connection; reverse polarity configuration per "RB" suffix
Lead WireAnodeFlexible termination for PCB or chassis mounting; requires mechanical strain relief

Key Features

FeatureDesign Value
Hermetic metal-glass sealEnables operation in vacuum, high-humidity, and corrosive environments without degradation
MIL-PRF-19500/124 qualificationSupports JAN/JANTX/JANTXV reliability levels for mission-critical aerospace and defense deployments
Inherent radiation hardnessValidated per Microsemi MicroNote 050 - eliminates need for external radiation shielding in space-grade designs
Nonsensitive to ESDQualified per MIL-STD-750 Method 1020 - reduces handling and assembly failure risk

Applications

Aerospace Power ConditioningDefense System Overvoltage Protection

Use Scenario: Regulating auxiliary 100–120 V DC bus in satellite power distribution units.

IC Role / Device Role / Timing Role: Shunt Zener regulator maintaining stable reference for DC-DC converter feedback loops.

Use Value: ±5% voltage tolerance and +0.095 %/°C TC enable predictable regulation across –55 °C to +125 °C operational envelope.

Use Scenario: Clamping transient surges on 105 V weapon control interface lines exposed to EMP.

IC Role / Device Role / Timing Role: High-energy shunt protector diverting >10 W surge energy to ground via stud mount.

Use Value: 10 W steady-state rating and 12 °C/W RθJC allow direct thermal coupling to chassis for rapid heat dissipation.

Industrial High-Voltage ReferenceRadiation-Hardened Test Equipment

Use Scenario: Providing stable 105 V reference in calibration-grade high-voltage meters.

IC Role / Device Role / Timing Role: Precision voltage reference source with low dynamic impedance (75 Ω).

Use Value: 75 Ω ZZT ensures <0.1% regulation error under 10 mA load variation - critical for metrology accuracy.

Use Scenario: Voltage stabilization in radiation monitoring instrumentation deployed in nuclear facilities.

IC Role / Device Role / Timing Role: Radiation-hardened Zener element maintaining reference integrity under total ionizing dose >100 krad(Si).

Use Value: Inherent radiation hardness per MicroNote 050 eliminates derating or redundancy overhead in TID-sensitive applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N3006BStandard polarity (anode-to-stud); identical electrical specs except terminal assignmentRequires reversed mounting orientation; incompatible with existing cathode-to-stud PCB layoutsSelect only when mechanical layout permits anode connection to heatsink
1N3006JANTXVSame polarity and specs as 1N3006RB but qualified to JANTXV level per MIL-PRF-19500/124Required for flight hardware where full military screening (burn-in, life test, lot acceptance) is mandatedChoose when program requirements specify JANTXV-level reliability documentation and traceability

Compared with 1N3006B and 1N3006JANTXV, the 1N3006RB uniquely combines reverse polarity (cathode-to-stud) with commercial-grade availability and RoHS-compliant variants (e3 suffix), making it optimal for high-reliability terrestrial systems needing simplified thermal mounting without full military screening overhead.

Availability

1N3006RB is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system overvoltage protection, and industrial high-voltage reference applications requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N3006RB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N3006RB belongs to Microsemi's legacy MIL-qualified 10 W Zener diode family, designed specifically for ruggedized voltage regulation in mission-critical power systems where hermeticity, radiation tolerance, and thermal stability are non-negotiable.

FAQ

What does the "RB" suffix mean in 1N3006RB?

The "RB" suffix in 1N3006RB denotes reverse polarity: cathode is connected to the metal stud, while the lead wire serves as the anode. This configuration simplifies thermal mounting to a heatsink or chassis when the cathode must be at system ground potential, and differs from the standard "B" variant where the anode connects to the stud.

What is the maximum steady-state power dissipation for 1N3006RB?

The 1N3006RB has a steady-state power dissipation rating of 10 W at case (studs) temperature of +55 °C. Above this temperature, power must be linearly derated at 0.083 W/°C, reaching zero at +175 °C - a limit defined by its 12 °C/W junction-to-case thermal resistance and silicon process limits.

Is 1N3006RB qualified to MIL-PRF-19500/124?

Yes, the 1N3006RB is available in JAN, JANTX, and JANTXV reliability levels qualified per MIL-PRF-19500/124. The base part number supports all three levels; qualification level is indicated by the prefix (e.g., JANTXV 1N3006RB), not the suffix. Commercial versions omit the prefix but retain identical electrical and mechanical specs.

What is the Zener impedance of 1N3006RB and why does it matter?

The 1N3006RB has a dynamic impedance (ZZT) of 75 Ω at 25 mA test current. This value reflects how tightly the device regulates voltage under varying load - lower impedance yields smaller output voltage deviations during current transients, which is essential for precision reference and feedback applications in switching power supplies.

Can 1N3006RB be used in radiation-intensive environments?

Yes, the 1N3006RB exhibits inherent radiation hardness as documented in Microsemi MicroNote 050. Its hermetically sealed metal-glass construction and silicon process provide tolerance to total ionizing dose (TID) without parameter shift or functional failure - making it suitable for space, nuclear, and high-altitude applications where radiation-induced degradation must be avoided.

1N3006RB Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-203AA, DO-4, Stud
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
105 V
Tolerance:
±5%
Power - Max:
10 W
Impedance (Max) (Zzt):
45 Ohms
Current - Reverse Leakage @ Vr:
10 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 2 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Stud Mount
Supplier Device Package:
DO-4 (DO-203AA)

1N3006RB FAQ

1.How can I place an order for 1N3006RB through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N3006RB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N3006RB reliable?

The price and inventory of 1N3006RB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3006RB is usually 5 days.

3.What payment methods are accepted for 1N3006RB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3006RB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N3006RB?

1N3006RB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N3006RB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N3006RB?

For technical support, including 1N3006RB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3006RB requirements.

6.How does Aetrix verify that 1N3006RB is sourced from the original manufacturer or authorized distributors?

All 1N3006RB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3006RB meets industry standards.

7.What is the process for return or replacement of 1N3006RB?

All 1N3006RB units undergo pre-shipment inspection (PSI). If there is an issue with 1N3006RB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N3006RB part is unused and in its original packaging.

Return procedure for 1N3006RB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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