Microchip Technology 1N3013RB
- Part No.:
- 1N3013RB
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-203AA, DO-4, Stud
- Datasheet:
-
1N3013RB.pdf
- Description:
- DIODE ZENER 175V 10W DO4
- Quantity:
- Payment:

- Shipping:

Inventory:5,311
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N3013RB from Microsemi is a 175 V, 10 W hermetically sealed, stud-mounted Zener diode with reverse polarity (cathode-to-stud), qualified to MIL-PRF-19500/124 JANTXV level. It delivers ±5% voltage tolerance, 46 Ω dynamic impedance at 14 mA test current, and operates from –65 °C to +175 °C junction temperature - used in high-reliability voltage regulation for aerospace power supplies and radiation-hardened instrumentation.
For engineers reviewing the 1N3013RB datasheet, 1N3013RB pinout, 1N3013RB application, or 1N3013RB equivalent, this page provides verified military-grade Zener specifications, DO-213AA (DO-4) mechanical details, thermal derating guidance, and direct alternatives with validated polarity and qualification alignment.
Technical Context
This device functions as a precision voltage reference in high-power, high-temperature environments where stability under thermal stress and radiation exposure is critical. Its welded metal-glass hermetic seal ensures long-term reliability in vacuum or corrosive atmospheres, and its 12 °C/W junction-to-case thermal resistance enables efficient heat transfer via stud mounting.
The 1N3013RB exhibits a +0.095 %/°C temperature coefficient and maintains regulation across 10–250 mA Zener current range. Its 10 µA reverse leakage at 135 V confirms low standby loss in high-impedance bias networks typical of analog front-end protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 175 V ±5% at 14 mA - sets precise clamping threshold for overvoltage protection in 150–200 V DC bus systems. |
| Power Dissipation | 10 W @ TC = +55 °C - supports continuous regulation in high-current shunt applications without forced cooling. |
| Dynamic Impedance (ZZT) | 46 Ω @ IZT = 14 mA - ensures minimal output voltage variation under load transients in feedback references. |
| Junction Temperature Range | –65 °C to +175 °C - enables operation in engine bay electronics, downhole tools, and satellite power subsystems. |
| Thermal Resistance (RθJC) | 12 °C/W - allows direct thermal path to heatsink via threaded stud, simplifying thermal design in conduction-cooled enclosures. |
| Reverse Leakage (IR) | 10 µA @ 135 V - minimizes quiescent current in high-impedance voltage divider networks for sensor biasing. |
| Temperature Coefficient (αVZ) | +0.095 %/°C - predictable drift behavior supports compensation in wide-temperature-range analog signal chains. |
Pinout & Package
Package: DO-213AA (DO-4), hermetically sealed metal-glass stud package with 10-32 UNF–2A threaded stud (anode terminal). Weight: ~7.5 g. Mounting requires torque-limited assembly (≤15 in·lb).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Stud (Threaded Body) | Cathode | Primary heat-sinking path and high-current return node; must be electrically isolated from chassis unless circuit design specifies common-cathode grounding. |
| Lead Wire | Anode | Signal-side connection point; routed to regulated voltage node; requires strain relief due to rigid glass-metal seal construction. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic metal-glass seal | Prevents moisture ingress and parameter drift over 20+ year field life in humid or vacuum environments. |
| JANTXV qualification per MIL-PRF-19500/124 | Validated screening for burn-in, thermal shock, and radiation hardness - required for flight-critical avionics power regulation. |
| Reverse polarity (RB suffix) | Cathode-to-stud configuration enables direct chassis-mount clamping in grounded-stud power supply designs. |
| Internal solder bond construction | Eliminates wirebond fatigue failure modes under high-vibration conditions (e.g., launch vehicle power systems). |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands >4 kV HBM without parameter shift - simplifies handling in uncontrolled production environments. |
Applications
| Aerospace Power Bus Regulation | Downhole Instrumentation Reference |
|---|---|
Use Scenario: Stabilizing 180 V DC intermediate bus in satellite power distribution units exposed to thermal cycling and total ionizing dose. IC Role / Device Role / Timing Role: Primary shunt regulator maintaining ±1% output tolerance across –55 °C to +125 °C ambient. Use Value: Hermetic seal and +0.095 %/°C αVZ enable predictable drift compensation without active circuitry. |
Use Scenario: Providing stable 175 V bias for gamma-ray detector preamplifiers operating at 175 °C downhole. IC Role / Device Role / Timing Role: High-temperature Zener reference replacing less robust silicon alternatives prone to parametric shift. Use Value: 175 °C max junction rating and radiation-hardened structure ensure >10,000-hour operational integrity. |
| Military Radar Transmitter Clamping | High-Voltage Test Equipment Protection |
Use Scenario: Overvoltage clamping on 160 V pulse modulator stages in ground-based radar systems subject to lightning-induced surges. IC Role / Device Role / Timing Role: Fast-response shunt limiter absorbing 10 W transient energy without degradation. Use Value: 10 W steady-state rating and 12 °C/W RθJC allow direct stud-mounting to aluminum chassis for immediate thermal dissipation. |
Use Scenario: Precision voltage limiting in automated test equipment calibrating 200 V industrial sensors. IC Role / Device Role / Timing Role: Calibration-grade reference with ±5% tolerance traceable to NIST standards via JANTXV lot certification. Use Value: MIL-qualified consistency ensures measurement repeatability across production batches and field service units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3013B | Standard polarity (anode-to-stud); identical VZ, PD, and qualification level. | Requires insulated mounting hardware when cathode must be isolated from chassis. | Select 1N3013B only if anode-to-stud polarity aligns with existing PCB layout and thermal interface design. |
| 1N3013RA | Not applicable - RA suffix applies only to 1N3993–1N3998 series (cathode-to-stud standard); no RA variant exists for 1N3013 family. | - | 1N3013RA is not a valid part number; use 1N3013RB for reverse polarity or verify cross-reference with Microsemi support. |
Compared with 1N3013B, the 1N3013RB offers identical electrical performance but inverted terminal polarity - enabling direct chassis-grounded cathode configurations without insulating washers. No alternative provides both JANTXV qualification and 175 V rating in DO-4 package with cathode-to-stud orientation.
Availability
1N3013RB is available at Aetrix Electronics and suitable for aerospace power regulation, downhole instrumentation, military radar clamping, and high-voltage test equipment requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N3013RB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specializes in high-reliability analog and RF semiconductors for aerospace, defense, and industrial markets.
The 1N3013RB belongs to Microsemi's legacy MIL-PRF-19500/124 qualified Zener diode family, engineered for voltage regulation in mission-critical systems demanding radiation tolerance, hermetic sealing, and extreme temperature operation.
FAQ
What does the "RB" suffix mean in 1N3013RB?
The "RB" suffix in 1N3013RB indicates reverse polarity: cathode is connected to the threaded stud, while the lead wire is the anode. This configuration allows direct mounting to a grounded chassis for shunt regulation without insulating hardware - a key distinction from the standard 1N3013B (anode-to-stud). The 1N3013RB retains identical Zener voltage, power rating, and JANTXV qualification as its standard-polarity counterpart.
Is 1N3013RB RoHS compliant?
No - the 1N3013RB is not RoHS compliant. RoHS-compliant versions of this family require the "e3" suffix (e.g., 1N3013RBe3), which is available only for commercial-grade variants. The 1N3013RB carries JANTXV military qualification and uses traditional tin-lead plating per MIL-PRF-19500/124 requirements, making it exempt from RoHS restrictions for defense applications.
What is the maximum allowable stud temperature for continuous operation of 1N3013RB?
The 1N3013RB is rated for continuous operation with stud temperature (TC) up to +55 °C at full 10 W dissipation. Above +55 °C, power must be linearly derated at 0.083 W/°C - meaning at +105 °C stud temperature, maximum safe dissipation drops to 6.6 W. This derating ensures junction temperature remains within the –65 °C to +175 °C limit, preserving long-term reliability in conduction-cooled systems.
Can 1N3013RB replace 1N3013B in an existing design?
Yes - 1N3013RB can replace 1N3013B electrically and thermally, but polarity reversal must be verified in the circuit layout. Since 1N3013RB has cathode-to-stud versus 1N3013B's anode-to-stud, the mounting interface and grounding scheme must accommodate reversed terminal assignment. No changes to voltage rating, power handling, or qualification level are needed - only mechanical and grounding validation.
What is the Zener test current (IZT) and dynamic impedance (ZZT) for 1N3013RB?
For 1N3013RB, the Zener test current (IZT) is 14 mA, and the dynamic impedance (ZZT) is 46 Ω measured at that current. This low impedance value ensures tight regulation under varying load conditions - critical for precision references in analog signal conditioning and feedback loops where <1% output variation is required across operating current ranges.
1N3013RB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-203AA, DO-4, Stud
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 175 V
- Tolerance:
- ±5%
- Power - Max:
- 10 W
- Impedance (Max) (Zzt):
- 250 Ohms
- Current - Reverse Leakage @ Vr:
- 10 µA @ 135 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 2 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Stud Mount
- Supplier Device Package:
- DO-4 (DO-203AA)
1N3013RB FAQ
1.How can I place an order for 1N3013RB through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3013RB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3013RB reliable?
The price and inventory of 1N3013RB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3013RB is usually 5 days.
3.What payment methods are accepted for 1N3013RB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3013RB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3013RB?
1N3013RB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3013RB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3013RB?
For technical support, including 1N3013RB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3013RB requirements.
6.How does Aetrix verify that 1N3013RB is sourced from the original manufacturer or authorized distributors?
All 1N3013RB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3013RB meets industry standards.
7.What is the process for return or replacement of 1N3013RB?
All 1N3013RB units undergo pre-shipment inspection (PSI). If there is an issue with 1N3013RB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3013RB part is unused and in its original packaging.
Return procedure for 1N3013RB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3013RB Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

