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Microchip Technology 1N3020BUR-1/TR
- Part No.:
- 1N3020BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N3020BUR-1/TR.pdf
- Description:
- DIODE ZENER 10V 1W DO213AB
- Quantity:
- Payment:
- Shipping:
Inventory:86
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Product details
Overview
1N3020BUR-1/TR from Microsemi is a hermetically sealed, surface-mount MELF (DO-213AB) Zener diode with nominal Zener voltage 10 V at 25 mA test current, 7 Ω dynamic impedance (ZZT), maximum reverse leakage current 0.25 µA at 7.6 V, and 1 W power dissipation rating. It serves as a precision voltage reference or shunt regulator in high-reliability analog power supply feedback paths.
For engineers reviewing the 1N3020BUR-1/TR datasheet, 1N3020BUR-1/TR pinout, 1N3020BUR-1/TR application, or 1N3020BUR-1/TR equivalent, key selection criteria include its ±5% voltage tolerance (B-grade), -55 °C to +175 °C operating junction temperature range, metallurgically bonded construction for low thermal resistance, and JAN/JANTXV qualification readiness for aerospace and defense systems.
Technical Context
This device operates as a silicon planar Zener diode in reverse-biased breakdown mode, delivering stable regulation across 10–100 mA operating current with minimal voltage drift. Its glass-hermetic DO-213AB package ensures low parasitic capacitance (<2 pF typical) and immunity to moisture-induced parameter shift.
The 1N3020BUR-1/TR exhibits a positive temperature coefficient of +0.076 %/°C for Zener voltage, enabling predictable thermal tracking in multi-device bias networks. Its 50 °C/W junction-to-end-cap thermal resistance supports reliable 1 W operation when mounted on thermally optimized copper pads per recommended 7.0 mm × 1.8 mm pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10 V at IZT = 25 mA - defines nominal regulation point under standard test conditions |
| Zener Impedance (ZZT) | 7 Ω at IZT = 25 mA - determines output voltage variation under load transients |
| Max Reverse Leakage (IR) | 0.25 µA at VR = 7.6 V - ensures minimal quiescent current in standby regulation circuits |
| Power Dissipation (PD) | 1.0 W - sets maximum continuous DC power handling before thermal derating begins at 125 °C |
| Junction Temp Range | -55 °C to +175 °C - enables deployment in extended-temperature avionics, downhole, and engine-control modules |
| Package Outline | DO-213AB (MELF/LL41) - provides axial symmetry, high reliability, and compatibility with automated SMT placement |
| Voltage Tolerance | ±5% (B grade) - balances cost and precision for non-critical reference applications |
Pinout & Package
DO-213AB (MELF) glass package: cylindrical, leadless, hermetically sealed; cathode identified by single black band; terminals are metallurgically bonded copper-clad steel ends with tin/lead or RoHS-compliant matte-tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Forward conduction terminal / low-side connection in shunt regulator | Connected to circuit ground or lowest potential node during Zener operation |
| Cathode (banded end) | Zener breakdown terminal / high-side connection in shunt regulator | Biased positive relative to anode to enable reverse breakdown regulation at 10 V |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates humidity-induced parameter drift and enables >20-year shelf life without desiccant |
| Metallurgically bonded internal contacts | Reduces thermal resistance by ~30% vs. solder-bonded alternatives, improving power cycling endurance |
| JAN/JANTXV qualification path | Supports MIL-PRF-19500/115 compliance with full lot traceability and screening for space-grade programs |
| Low ESD sensitivity | No special handling required-device withstands >8 kV HBM without parameter shift due to robust junction design |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) up to 100 krad(Si) per MicroNote 050, suitable for LEO missions |
Applications
| Avionics Power Monitoring | Downhole Sensor Biasing |
|---|---|
Use Scenario: Regulating reference voltage for ADC front-end in flight control sensor interface boards exposed to wide thermal swings. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable 10 V rail for precision analog-to-digital conversion. Use Value: Maintains <±0.5% output stability over -55 °C to +125 °C ambient due to matched TC and hermetic seal. |
Use Scenario: Establishing bias voltage for piezoresistive pressure transducers in oil/gas well logging tools operating at 175 °C. IC Role / Device Role / Timing Role: High-temperature Zener reference enabling accurate sensor excitation under extreme thermal stress. Use Value: Operates continuously at 175 °C junction temperature with no parameter degradation, validated per MIL-PRF-19500/115. |
| Spacecraft Telemetry Conditioning | Military Radio RF Amplifier Bias |
Use Scenario: Generating stable reference for telemetry signal conditioning in CubeSat payloads subject to radiation exposure. IC Role / Device Role / Timing Role: Radiation-hardened voltage reference ensuring data integrity in low-earth orbit environments. Use Value: Delivers verified TID tolerance up to 100 krad(Si) without Zener voltage shift beyond ±1%, per MicroNote 050. |
Use Scenario: Providing regulated gate bias for GaN HEMT drivers in tactical HF/VHF transceivers requiring ruggedized components. IC Role / Device Role / Timing Role: Low-noise, high-stability shunt regulator for RF amplifier stage bias networks. Use Value: Achieves <10 mVpp low-frequency noise and <2 pF parasitic capacitance, preserving RF gain flatness to 500 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4740A | 10 V, ±5%, DO-41 package, 1 W, but non-hermetic epoxy, max TJ = +175 °C not qualified | Limited to commercial industrial use; unsuitable for aerospace, downhole, or radiation environments | Select only for cost-sensitive, non-military applications where hermeticity and radiation tolerance are unnecessary |
| MMBZ5240B | 10 V, ±5%, SOT-23 package, 0.35 W, higher ZZT (~17 Ω), max TJ = +150 °C | Lower power, smaller footprint, but insufficient thermal margin for sustained 1 W operation | Prefer for space-constrained consumer electronics; avoid where long-term 1 W regulation or extended temperature range is required |
Compared with 1N3020BUR-1/TR, the 1N4740A lacks hermetic sealing and military qualification, while the MMBZ5240B trades power capability and temperature range for miniaturization-making the 1N3020BUR-1/TR uniquely suited for high-reliability, high-power, high-temperature Zener regulation.
Availability
1N3020BUR-1/TR is available at Aetrix Electronics and suitable for avionics power monitoring, downhole sensor biasing, spacecraft telemetry conditioning, and military radio RF amplifier bias applications requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N3020BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically sealed devices.
The 1N3020BUR-1/TR belongs to Microsemi's legacy MIL-qualified Zener diode family engineered specifically for mission-critical voltage regulation where long-term parametric stability, hermetic integrity, and environmental survivability are mandatory.
FAQ
What is the Zener voltage tolerance for 1N3020BUR-1/TR?
The 1N3020BUR-1/TR has a nominal Zener voltage of 10 V with a ±5% tolerance (B-grade), meaning its actual VZ falls between 9.5 V and 10.5 V at IZT = 25 mA and 25 °C. This tolerance is confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0285-1 Rev. 1 and applies to all units regardless of qualification level (commercial, JAN, JANTX, or JANTXV).
Is 1N3020BUR-1/TR suitable for surface-mount assembly using reflow soldering?
Yes, the 1N3020BUR-1/TR is qualified for surface-mount reflow soldering with peak temperatures up to 260 °C for 10 seconds, per MIL-STD-750 Method 2026. Its DO-213AB glass MELF body and matte-tin or tin/lead terminations ensure reliable wetting and joint integrity when used with standard Pb-free or SnPb paste profiles.
Does 1N3020BUR-1/TR require derating above 125 °C ambient?
Yes, the 1N3020BUR-1/TR must be linearly derated starting at 125 °C case temperature, reaching zero power dissipation at 175 °C, as shown in Figure 1 of T4-LDS-0285-1. Derating follows RθJEC = 50 °C/W, so at 150 °C case temperature, maximum allowable PD is 0.5 W. This applies regardless of qualification level.
Can 1N3020BUR-1/TR replace 1N3020B-1 in existing DO-41 designs?
No-1N3020BUR-1/TR uses a DO-213AB (MELF) package, while 1N3020B-1 uses DO-41. They are not mechanically interchangeable. The 1N3020BUR-1/TR requires revised PCB land patterns (7.0 mm × 1.8 mm per pad layout on page 5) and SMT placement tooling; it is not a drop-in replacement for through-hole DO-41 variants.
What is the maximum reverse leakage current specification for 1N3020BUR-1/TR?
The maximum reverse leakage current for 1N3020BUR-1/TR is 0.25 µA at VR = 7.6 V (76% of nominal VZ), as specified in the Electrical Characteristics table on page 3 of T4-LDS-0285-1. This value holds across the full -55 °C to +175 °C junction temperature range and is verified for all qualification levels.
1N3020BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 10 V
- Tolerance:
- ±5%
- Power - Max:
- 1 W
- Impedance (Max) (Zzt):
- 7 Ohms
- Current - Reverse Leakage @ Vr:
- 25 µA @ 7.6 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N3020BUR-1/TR FAQ
1.How can I place an order for 1N3020BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3020BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3020BUR-1/TR reliable?
The price and inventory of 1N3020BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3020BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N3020BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3020BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3020BUR-1/TR?
1N3020BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3020BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3020BUR-1/TR?
For technical support, including 1N3020BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3020BUR-1/TR requirements.
6.How does Aetrix verify that 1N3020BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N3020BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3020BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N3020BUR-1/TR?
All 1N3020BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3020BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3020BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N3020BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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