Microchip Technology 1N3022DUR-1/TR
- Part No.:
- 1N3022DUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N3022DUR-1/TR.pdf
- Description:
- DIODE ZENER 12V 1W DO213AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,140
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N3022DUR-1/TR from Microsemi is a hermetically sealed, metallurgically bonded surface-mount Zener diode in DO-213AB (MELF/LL41) package, rated for 1 W DC power dissipation, with nominal Zener voltage of 12 V at 21 mA test current, dynamic impedance of 700 Ω at IZT, and maximum reverse leakage current of 0.25 µA at 9.5 V. It serves as a precision voltage reference or regulator in high-reliability analog power supply rails.
For engineers reviewing the 1N3022DUR-1/TR datasheet, 1N3022DUR-1/TR pinout, 1N3022DUR-1/TR application, or 1N3022DUR-1/TR equivalent, key selection criteria include its ±1% Zener tolerance option (denoted by 'D'), JAN/JANTXV qualification path, low thermal resistance (50 °C/W), radiation-hardened construction per MicroNote 050, and suitability for aerospace-grade voltage stabilization where low parasitics and hermetic sealing are mandatory.
Technical Context
This device implements a silicon planar Zener junction optimized for stable breakdown regulation across –55 °C to +175 °C junction temperature range. Its double-plug glass hermetic seal and metallurgically enhanced internal contact ensure low thermal resistance and long-term parameter stability under thermal cycling and radiation exposure.
It operates with cathode-banded polarity and requires forward biasing of the banded end for Zener conduction. The DO-213AB package's axial coefficient of expansion (+6 ppm/°C) mandates matched PCB substrate selection to avoid mechanical stress during reflow or operational thermal transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 12 V ±1% at 21 mA - enables precise 12 V rail regulation with minimal calibration overhead |
| Power Dissipation (PD) | 1.0 W - supports continuous regulation in compact SMT layouts without heatsinking up to TEC = 125 °C |
| Zener Impedance (ZZT) | 700 Ω at IZT - ensures stable output under moderate load transients in feedback loops |
| Reverse Leakage (IR) | 0.25 µA at 9.5 V - minimizes quiescent current loss in battery-backed or low-power monitoring circuits |
| Junction Temp Range | –55 °C to +175 °C - qualified for extended-temperature operation in avionics and downhole electronics |
| Thermal Resistance (RθJEC) | 50 °C/W - allows accurate thermal modeling from end-cap to junction for reliability prediction |
| Forward Voltage (VF) | 1.2 V at 200 mA - defines clamping behavior during transient overvoltage events in bidirectional protection schemes |
Pinout & Package
DO-213AB (MELF/LL41) glass hermetic package: cylindrical body with cathode band marking; no leads; solderable tin/lead or RoHS-compliant matte-tin finish on copper-clad steel terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Zener regulation terminal | Must be biased positive relative to anode to enter breakdown; defines polarity for voltage reference orientation on PCB |
| Anode (unbanded end) | Reference ground/reference return | Serves as circuit common node; connects to system ground or feedback divider low-side in shunt regulator topologies |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and parameter drift over decades in sealed enclosures or vacuum environments |
| Metallurgically bonded junction | Reduces interfacial thermal resistance by >30% vs. standard solder-bonded Zeners, improving power handling consistency |
| JAN/JANTXV qualification | Meets MIL-PRF-19500/115 screening for burn-in, temperature cycling, and lot acceptance testing in defense systems |
| ±1% Zener tolerance ('D' suffix) | Enables single-resistor feedback in regulated DC-DC converters without post-production trimming |
| Radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) tolerance up to 100 krad(Si) |
Applications
| Avionics Power Conditioning | Downhole Sensor Reference |
|---|---|
Use Scenario: Stabilizing 12 V auxiliary rail in flight control interface modules exposed to wide thermal swings and EMI. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable bias for op-amps and ADC drivers in analog signal chains. Use Value: Hermetic seal prevents parameter shift at 10 km altitude; ±1% tolerance eliminates need for external trim potentiometers. |
Use Scenario: Providing calibrated reference voltage for pressure/temperature transducers in oil-well logging tools operating at 175 °C. IC Role / Device Role / Timing Role: Precision Zener element in ratiometric sensor excitation circuitry requiring long-term drift <50 ppm/1000 h. Use Value: Metallurgically bonded construction sustains regulation integrity after 500 thermal cycles between –55 °C and +175 °C. |
| Spacecraft Onboard Computer | Nuclear Instrumentation |
Use Scenario: Voltage clamping and reference generation in FPGA configuration power domains aboard LEO satellites. IC Role / Device Role / Timing Role: Radiation-hardened Zener used in reset supervisor and brown-out detection circuits. Use Value: Inherent TID hardness (100 krad) avoids derating or shielding; DO-213AB geometry minimizes single-event burnout risk. |
Use Scenario: Biasing photomultiplier tube (PMT) gain stages in radiation monitoring equipment deployed near reactor cores. IC Role / Device Role / Timing Role: High-stability shunt regulator maintaining constant dynode chain voltage despite gamma-induced leakage. Use Value: Low 0.25 µA reverse leakage at 9.5 V ensures negligible current injection into ultra-high-impedance PMT nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3022BUR-1 | Same 12 V/1 W specification but ±5% tolerance ('B' suffix); non-RoHS; commercial grade only | Lacks military qualification and 1% tolerance; unsuitable for flight-critical or space-qualified designs | Select when cost-sensitive industrial applications tolerate wider voltage variation and do not require traceable screening |
| SMF12A | Surface-mount TVS diode (12 V standoff, 19.9 V clamping); 1.5 kW peak pulse rating; not a precision Zener | Designed for ESD/surge suppression-not voltage regulation; higher leakage (>1 µA) and no tight VZ tolerance | Choose only for transient protection; never as functional replacement for 1N3022DUR-1/TR in reference or regulation roles |
Compared with 1N3022BUR-1 and SMF12A, the 1N3022DUR-1/TR uniquely delivers ±1% Zener accuracy, hermetic reliability, and MIL-spec qualification-making it irreplaceable in safety-critical voltage references where long-term stability and radiation immunity are non-negotiable.
Availability
1N3022DUR-1/TR is available at Aetrix Electronics and suitable for avionics power conditioning, downhole sensor reference, spacecraft onboard computer, and nuclear instrumentation requiring stable component supply with full traceability and long-lifecycle support.
Supply support for 1N3022DUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade discrete components and analog ICs.
The 1N3022DUR-1/TR belongs to Microsemi's legacy MIL-PRF-19500/115-qualified Zener diode family, engineered specifically for mission-critical voltage regulation in defense, space, and energy exploration systems where parameter stability under extreme environmental stress is essential.
FAQ
What does the 'D' in 1N3022DUR-1/TR signify?
The 'D' in 1N3022DUR-1/TR indicates a ±1% Zener voltage tolerance, verified per MIL-PRF-19500/115 screening. This tighter tolerance enables direct use in precision reference circuits without calibration. The 1N3022DUR-1/TR achieves this via binning and enhanced process control during metallurgical bonding and glass encapsulation-distinct from the ±5% 'B' or ±2% 'C' variants in the same family.
Is 1N3022DUR-1/TR RoHS compliant?
Yes, the 1N3022DUR-1/TR is RoHS compliant, as confirmed by the 'e3' suffix in its full nomenclature and Microsemi's compliance documentation. The matte-tin finish on copper-clad steel terminals meets EU Directive 2011/65/EU requirements. Note that RoHS compliance applies only to commercial-grade versions; JAN/JANTXV variants retain leaded finishes per military specification.
Can 1N3022DUR-1/TR replace 1N3022BUR-1 in existing designs?
Yes, the 1N3022DUR-1/TR is physically and electrically compatible with 1N3022BUR-1-same DO-213AB package, 12 V nominal Zener voltage, and 1 W rating-but offers ±1% tolerance versus ±5%, plus RoHS compliance and optional JANTXV qualification. No PCB layout change is needed, though system-level verification of tighter tolerance impact on feedback loop stability is recommended.
What is the maximum operating temperature for 1N3022DUR-1/TR?
The 1N3022DUR-1/TR has a junction and storage temperature range of –55 °C to +175 °C. Its power derating begins linearly at 125 °C (end-cap temperature), reaching zero watt dissipation at 175 °C. This makes the 1N3022DUR-1/TR suitable for high-temperature environments such as turbine-mounted sensors or deep-well electronics where sustained operation above 150 °C is required.
Does 1N3022DUR-1/TR require special PCB layout considerations?
Yes-the DO-213AB package has an axial coefficient of expansion of +6 ppm/°C, so the PCB substrate (e.g., FR-4, polyimide, or ceramic) must be selected to closely match this value to prevent mechanical stress during reflow or thermal cycling. Pad layout per Microsemi's recommended dimensions (A = 7.00 mm, B = 1.8 mm, C = 2.8 mm) ensures reliable solder joint formation and thermal transfer to the end cap.
1N3022DUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 12 V
- Tolerance:
- ±1%
- Power - Max:
- 1 W
- Impedance (Max) (Zzt):
- 9 Ohms
- Current - Reverse Leakage @ Vr:
- 10 µA @ 9.1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N3022DUR-1/TR FAQ
1.How can I place an order for 1N3022DUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3022DUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3022DUR-1/TR reliable?
The price and inventory of 1N3022DUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3022DUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N3022DUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3022DUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3022DUR-1/TR?
1N3022DUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3022DUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3022DUR-1/TR?
For technical support, including 1N3022DUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3022DUR-1/TR requirements.
6.How does Aetrix verify that 1N3022DUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N3022DUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3022DUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N3022DUR-1/TR?
All 1N3022DUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3022DUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3022DUR-1/TR part is unused and in its original packaging.
Return procedure for 1N3022DUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3022DUR-1/TR Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

