Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N3030BUR-1/TR

Part No.:
1N3030BUR-1/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-213AB, MELF (Glass)
Datasheet:
Aetrix1N3030BUR-1/TR.pdf
Description:
DIODE ZENER 27V 1W DO213AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,112

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N3030BUR-1 from Microsemi is a hermetically sealed, metallurgically bonded surface-mount Zener diode in DO-213AB (MELF/LL41) package, rated for 1 W DC power dissipation, with nominal Zener voltage of 27 V at 9.5 mA test current, dynamic impedance of 750 Ω at IZT, and maximum reverse leakage current of 0.25 µA at 20.6 V. It is qualified to MIL-PRF-19500/115 at JANTXV level and used for precision voltage regulation in high-reliability aerospace and defense power supplies.

For engineers reviewing the 1N3030BUR-1 datasheet, 1N3030BUR-1 pinout, 1N3030BUR-1 application, or 1N3030BUR-1 equivalent, key selection criteria include its 27 V ±5% Zener tolerance, 750 Ω dynamic impedance at 9.5 mA, -55 °C to +175 °C operating junction temperature range, hermetic glass MELF construction, and JANTXV qualification for radiation-hardened environments.

Technical Context

This device operates as a two-terminal voltage reference diode, conducting in reverse breakdown to maintain stable output voltage across wide current (9.5 mA to 35 mA) and temperature (-55 °C to +175 °C) ranges. Its metallurgically enhanced internal contact design reduces thermal resistance and improves long-term stability under thermal cycling.

The DO-213AB package provides low parasitic inductance and capacitance, enabling use in noise-sensitive analog regulation and EMI-critical military subsystems. Its axial coefficient of expansion (+6 ppm/°C) requires matched PCB substrate selection to prevent mechanical stress-induced parameter drift.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 27 V ±5% at 9.5 mA - defines regulated output voltage with tight tolerance for precision reference applications
Power Dissipation (PD) 1.0 W - supports continuous regulation in compact SMT layouts without forced cooling
Dynamic Impedance (ZZT) 750 Ω at IZT = 9.5 mA - determines output voltage variation under load transients
Reverse Leakage Current (IR) 0.25 µA max at 20.6 V - ensures minimal quiescent current draw in battery-backed circuits
Junction Temperature Range -55 °C to +175 °C - enables operation in extended-temperature avionics and downhole electronics
Thermal Resistance (RθJEC) 50 °C/W - allows accurate thermal modeling when mounted to end-cap heatsinking surfaces
Forward Voltage (VF) 1.2 V max at 200 mA - defines conduction loss during forward-biased protection or clamping modes

Pinout & Package

DO-213AB (MELF/LL41) hermetically sealed glass cylindrical package with cathode band marking; terminals are non-polarized axial leads solderable per MIL-STD-750 Method 2026.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Anode-side connection in reverse-bias regulation Must be held negative relative to anode to enable Zener breakdown; polarity critical for correct voltage reference polarity
Anode (unbanded end) Cathode-side connection in reverse-bias regulation Connected to system ground or lower potential node; forms reference return path for regulated output

Key Features

Feature Design Value
Hermetic double-plug glass seal Prevents moisture ingress and parametric drift over 20+ year field life in sealed enclosures
Metallurgically bonded junction Reduces thermal resistance by ~30% vs. standard wire-bonded Zeners, improving power handling at high ambient temperatures
JANTXV qualification per MIL-PRF-19500/115 Validated screening for burn-in, temperature cycling, and radiation hardness per MicroNote 050
Low ESD sensitivity No special handling required-compatible with standard SMT assembly lines without ionization or grounding protocols
RoHS-compliant option (e3 suffix) Matte-tin finish on copper-clad steel leads meets EU Directive 2011/65/EU for commercial-grade variants

Applications

Avionics Power Regulation Satellite Bus Voltage Reference

Use Scenario: Stabilizing 28 VDC bus voltage in flight control computers under wide temperature and vibration conditions.

IC Role / Device Role / Timing Role: Two-terminal shunt regulator maintaining reference accuracy despite input ripple and load transients.

Use Value: 27 V nominal Zener voltage matches aircraft bus mid-point; 750 Ω dynamic impedance limits output deviation to <±0.5 V over 5–30 mA load range.

Use Scenario: Providing stable bias voltage for radiation-tolerant op-amps in satellite telemetry signal conditioning.

IC Role / Device Role / Timing Role: Precision voltage reference source for ADC front-end gain calibration.

Use Value: JANTXV qualification ensures survivability under total ionizing dose >100 krad(Si); hermetic seal prevents parameter shift in vacuum.

Downhole Oilfield Instrumentation Military Radar Bias Supply

Use Scenario: Regulating sensor excitation voltage in borehole pressure transducers operating at 175 °C ambient.

IC Role / Device Role / Timing Role: High-temperature shunt regulator compensating for thermally induced supply drift.

Use Value: -55 °C to +175 °C junction rating enables direct mounting on sensor PCB without derating; 50 °C/W RθJEC supports passive thermal management.

Use Scenario: Generating stable gate bias for GaN RF power amplifiers in phased-array radar modules.

IC Role / Device Role / Timing Role: Low-noise voltage clamp protecting amplifier bias rails from switching transients.

Use Value: Low 0.25 µA leakage at 20.6 V minimizes standby current in pulsed systems; MELF geometry suppresses parasitic resonance up to 2 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N3030B-1 Same 27 V Zener voltage and DO-41 axial package; lacks MIL-PRF-19500 qualification and hermetic MELF construction Commercial industrial controls only; not suitable for aerospace or radiation environments Select when cost and lead time outweigh reliability requirements and board space permits axial mounting
SMF27A 27 V TVS diode in SOD-123 package; 1.5 kW peak pulse power but higher 100 Ω dynamic impedance and no MIL qualification Transient suppression-not precision regulation; unsuitable for low-leakage reference use Choose only for surge protection where Zener regulation function is secondary to clamping robustness

Compared with 1N3030B-1 and SMF27A, the 1N3030BUR-1 uniquely combines JANTXV qualification, hermetic MELF packaging, and 750 Ω dynamic impedance-making it the sole choice for high-reliability 27 V shunt regulation where long-term stability and radiation tolerance are mandatory.

Availability

1N3030BUR-1 is available at Aetrix Electronics and suitable for avionics power regulation, satellite bus voltage reference, and downhole oilfield instrumentation requiring stable component supply across extended product lifecycles.

Supply support for 1N3030BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N3030BUR-1 belongs to Microsemi's MIL-qualified Zener diode family designed specifically for precision voltage regulation in mission-critical systems where hermeticity, radiation hardness, and extended temperature operation are non-negotiable.

FAQ

What is the Zener voltage tolerance for 1N3030BUR-1?

The 1N3030BUR-1 has a nominal Zener voltage of 27 V with a ±5% tolerance, meaning its actual breakdown voltage falls between 25.65 V and 28.35 V when measured at 9.5 mA test current and 25 °C. This tolerance is specified per the "B" suffix in the part nomenclature and applies across the full -55 °C to +175 °C operating junction temperature range.

Is 1N3030BUR-1 suitable for surface-mount assembly?

Yes, the 1N3030BUR-1 uses the DO-213AB (MELF/LL41) surface-mount package with tin/lead or RoHS-compliant matte-tin finished copper-clad steel leads. It is solderable per MIL-STD-750 Method 2026 and rated for 260 °C reflow for 10 seconds. Its axial geometry requires specialized pick-and-place tooling but eliminates lead inductance common in gull-wing packages.

Does 1N3030BUR-1 meet military specifications?

Yes, the 1N3030BUR-1 is qualified per MIL-PRF-19500/115 at the JANTXV reliability level, including rigorous screening for burn-in, temperature cycling, and radiation hardness as documented in Microsemi MicroNote 050. The "UR" in the part number denotes the surface-mount MELF variant with metallurgical bonding, and the "-1" suffix indicates compliance with JEDEC registration standards.

What is the maximum reverse leakage current for 1N3030BUR-1?

The maximum reverse leakage current for 1N3030BUR-1 is 0.25 µA at 20.6 V (76% of nominal Zener voltage), measured at 25 °C. This ultra-low leakage enables use in battery-powered systems and high-impedance reference circuits where standby current must remain below 1 µA. Leakage remains below 1 µA up to 150 °C per characterization data.

How does the thermal resistance of 1N3030BUR-1 affect PCB layout?

The 1N3030BUR-1 has a junction-to-end-cap thermal resistance (RθJEC) of 50 °C/W, meaning each watt of dissipated power raises the junction temperature by 50 °C above the end-cap temperature. To avoid exceeding the 175 °C maximum junction temperature, the PCB must provide adequate copper area or thermal vias beneath the MELF body to maintain end-cap temperature ≤125 °C at full 1 W load.

1N3030BUR-1/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AB, MELF (Glass)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
27 V
Tolerance:
±5%
Power - Max:
1 W
Impedance (Max) (Zzt):
35 Ohms
Current - Reverse Leakage @ Vr:
10 µA @ 20.6 V
Voltage - Forward (Vf) (Max) @ If:
1.2 V @ 200 mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AB (MELF, LL41)

1N3030BUR-1/TR FAQ

1.How can I place an order for 1N3030BUR-1/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N3030BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N3030BUR-1/TR reliable?

The price and inventory of 1N3030BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3030BUR-1/TR is usually 5 days.

3.What payment methods are accepted for 1N3030BUR-1/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3030BUR-1/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N3030BUR-1/TR?

1N3030BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N3030BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N3030BUR-1/TR?

For technical support, including 1N3030BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3030BUR-1/TR requirements.

6.How does Aetrix verify that 1N3030BUR-1/TR is sourced from the original manufacturer or authorized distributors?

All 1N3030BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3030BUR-1/TR meets industry standards.

7.What is the process for return or replacement of 1N3030BUR-1/TR?

All 1N3030BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3030BUR-1/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N3030BUR-1/TR part is unused and in its original packaging.

Return procedure for 1N3030BUR-1/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N3030BUR-1/TR Tags

  • 1N3030BUR-1/TR
  • 1N3030BUR-1/TR PDF
  • 1N3030BUR-1/TR Datasheet
  • 1N3030BUR-1/TR Specifications
  • 1N3030BUR-1/TR Images
  • Microchip Technology
  • Microchip Technology 1N3030BUR-1/TR
  • Buy 1N3030BUR-1/TR
  • 1N3030BUR-1/TR Price
  • 1N3030BUR-1/TR Distributor
  • 1N3030BUR-1/TR Supplier
  • 1N3030BUR-1/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER