Microchip Technology 1N3039BUR-1/TR
- Part No.:
- 1N3039BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N3039BUR-1/TR.pdf
- Description:
- DIODE ZENER 62V 1W DO213AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,857
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N3039BUR-1 from Microsemi is a hermetically sealed, metallurgically bonded surface-mount Zener diode in DO-213AB (MELF/LL41) package, rated for 1 W DC power dissipation, with nominal Zener voltage of 62 V at 4.0 mA test current, dynamic impedance of 47.1 Ω at IZT, and maximum reverse leakage current of 0.25 µA at 47.1 V. It serves as a precision voltage reference or regulation element in high-reliability power supply feedback paths.
For engineers reviewing the 1N3039BUR-1 datasheet, 1N3039BUR-1 pinout, 1N3039BUR-1 application, or 1N3039BUR-1 equivalent, key selection criteria include its ±5% voltage tolerance (B suffix), -55°C to +175°C junction temperature range, 50°C/W thermal resistance, RoHS-compliant commercial variants, and MIL-PRF-19500/115 qualification options (JAN/JANTX/JANTXV).
Technical Context
This device operates as a two-terminal voltage regulator in reverse-biased breakdown mode, with Zener voltage specified at 62 V ±5% under 4.0 mA test current (IZT). Its glass MELF construction provides hermetic sealing and low parasitic capacitance, supporting stable regulation across wide temperature and current ranges.
Thermal performance is defined by RθJEC = 50°C/W and linear derating from 1.0 W at 125°C to zero at 175°C. The cathode band marking indicates polarity, requiring banded end to be positive during Zener operation - critical for correct biasing in feedback networks and overvoltage protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 62 V ±5% at 4.0 mA - defines precise regulation point for feedback loops and reference generation. |
| Power Dissipation (PD) | 1.0 W - supports continuous regulation in compact SMT layouts without forced cooling. |
| Dynamic Impedance (ZZT) | 47.1 Ω at IZT - determines output voltage stability under varying load current. |
| Reverse Leakage (IR) | 0.25 µA at 47.1 V - ensures minimal error contribution in high-impedance sensing or reference nodes. |
| Junction Temperature Range | -55°C to +175°C - enables deployment in aerospace, downhole, and military environments. |
| Thermal Resistance (RθJEC) | 50°C/W - informs heatsinking requirements when mounted on end-cap thermal pads. |
| Forward Voltage (VF) | 1.2 V at 200 mA - relevant for polarity verification and ESD-safe handling checks. |
Pinout & Package
Package: DO-213AB (MELF/LL41), hermetically sealed glass cylindrical body with axial cathode band marking; dimensions: BD = 2.39–2.67 mm, BL = 4.80–5.21 mm; weight ≈ 0.05 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Regulated output node | Connected to higher potential in Zener configuration; defines reference voltage relative to anode. |
| Anode (unbanded end) | Reference ground/reference return | Typically tied to system ground or feedback node; completes reverse-bias path for regulation. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and long-term parameter drift in harsh environments. |
| Metallurgically bonded internal contact | Reduces thermal resistance and improves reliability under thermal cycling stress. |
| JAN/JANTX/JANTXV military qualification | Validated per MIL-PRF-19500/115 for use in defense and space-grade systems. |
| Low ESD sensitivity | Enables safe handling without special grounding protocols during assembly. |
| Inherent radiation hardness | Documented in MicroNote 050 - suitable for TID-sensitive applications without shielding. |
Applications
| Avionics Power Monitoring | Downhole Sensor Reference |
|---|---|
Use Scenario: Monitoring regulated bus voltage in flight control power supplies where ambient temperature swings exceed 120°C. IC Role / Device Role / Timing Role: Zener diode providing stable 62 V reference for comparator-based overvoltage detection. Use Value: Hermetic seal and -55°C to +175°C rating prevent calibration shift during thermal transients. |
Use Scenario: Precision voltage reference in high-temperature pressure transducers deployed at >150°C wellbore depths. IC Role / Device Role / Timing Role: Two-terminal shunt regulator establishing known bias point for analog front-end amplifiers. Use Value: Metallurgically bonded construction minimizes thermal resistance, maintaining regulation accuracy under sustained heat soak. |
| Military Radar Bias Supply | Satellite Payload Voltage Clamp |
Use Scenario: Clamping transient spikes on RF amplifier bias rails in ground-based radar systems exposed to EMP. IC Role / Device Role / Timing Role: Fast-response shunt protector absorbing surge energy while holding rail within 62 V ±5%. Use Value: Low dynamic impedance (47.1 Ω) limits clamping voltage overshoot during nanosecond-scale transients. |
Use Scenario: Overvoltage protection for solar array regulators in LEO satellite power management units. IC Role / Device Role / Timing Role: Radiation-hardened Zener clamp preventing latch-up in downstream DC-DC converters. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding mass. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3039UR-1 | Same Zener voltage (62 V), but in DO-41 axial package; no MIL-PRF-19500 qualification; non-hermetic epoxy body. | Limited to commercial-grade PCBs with through-hole mounting; unsuitable for high-reliability or high-temperature SMT assemblies. | Select only if cost-sensitive, non-military, and board layout permits axial leads. |
| BZX85C62 | 62 V ±5%, 1.3 W rating, DO-41 package, commercial grade only; higher leakage (5 µA @ 47.1 V); no military qualification. | Acceptable for consumer-grade power supplies but lacks hermeticity, radiation hardness, and extended temperature capability. | Choose only for non-critical, low-cost applications where MIL-spec compliance is unnecessary. |
Compared with 1N3039BUR-1, the 1N3039UR-1 offers identical electrical specs but sacrifices SMT compatibility and reliability; BZX85C62 trades hermetic sealing, radiation hardness, and temperature range for lower unit cost and wider distributor availability.
Availability
1N3039BUR-1 is available at Aetrix Electronics and suitable for avionics power monitoring, downhole sensor reference, and military radar bias supply requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for 1N3039BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N3039BUR-1 belongs to Microsemi's legacy MIL-qualified Zener diode family, engineered specifically for voltage regulation in mission-critical systems demanding hermeticity, radiation tolerance, and extreme temperature operation.
FAQ
What is the Zener voltage tolerance for 1N3039BUR-1?
The 1N3039BUR-1 has a nominal Zener voltage of 62 V with a ±5% tolerance, indicated by the "B" suffix in its nomenclature. This means the actual measured VZ falls between 58.9 V and 65.1 V at 4.0 mA test current and 25°C. The tolerance is guaranteed across the full -55°C to +175°C operating range, validated per MIL-PRF-19500/115 for qualified versions.
Is 1N3039BUR-1 suitable for surface-mount assembly using standard reflow profiles?
Yes, the 1N3039BUR-1 is qualified for surface-mount assembly with a maximum solder temperature of 260°C for 10 seconds, compliant with J-STD-020. Its DO-213AB (MELF) package uses tin/lead or RoHS-compliant matte-tin finish on copper-clad steel terminals, ensuring reliable wetting and joint integrity under standard lead-free or SnPb reflow cycles.
Does 1N3039BUR-1 require heatsinking in 1 W operation?
No external heatsink is required for 1 W continuous operation at ambient temperatures ≤125°C, as thermal derating begins linearly at that point. With RθJEC = 50°C/W, junction temperature rise is 50°C above end-cap temperature. Proper PCB pad layout per the recommended 7.0 mm × 1.8 mm footprint ensures adequate conduction path to copper planes for passive thermal management.
How does the hermetic glass construction of 1N3039BUR-1 improve long-term reliability?
The hermetic double-plug glass seal in the 1N3039BUR-1 prevents moisture ingress and internal corrosion, eliminating parametric drift caused by humidity-induced degradation. This construction is essential for field lifetimes exceeding 20 years in sealed enclosures or high-humidity environments, and is a mandatory requirement for JAN/JANTXV-qualified units per MIL-PRF-19500/115.
Can 1N3039BUR-1 be used in radiation-intensive environments such as space payloads?
Yes, the 1N3039BUR-1 exhibits inherent radiation hardness documented in Microsemi MicroNote 050, making it suitable for total ionizing dose (TID) environments up to 100 krad(Si) without performance degradation. This property stems from its glass/MELF structure and metallurgical bonding - no additional shielding or derating is required for LEO satellite applications.
1N3039BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 62 V
- Tolerance:
- ±5%
- Power - Max:
- 1 W
- Impedance (Max) (Zzt):
- 125 Ohms
- Current - Reverse Leakage @ Vr:
- 10 µA @ 47.1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N3039BUR-1/TR FAQ
1.How can I place an order for 1N3039BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3039BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3039BUR-1/TR reliable?
The price and inventory of 1N3039BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3039BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N3039BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3039BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3039BUR-1/TR?
1N3039BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3039BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3039BUR-1/TR?
For technical support, including 1N3039BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3039BUR-1/TR requirements.
6.How does Aetrix verify that 1N3039BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N3039BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3039BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N3039BUR-1/TR?
All 1N3039BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3039BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3039BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N3039BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3039BUR-1/TR Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

