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Microchip Technology 1N3045BUR-1/TR
- Part No.:
- 1N3045BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N3045BUR-1/TR.pdf
- Description:
- DIODE ZENER 110V 1W DO213AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,285
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Product details
Overview
1N3045BUR-1 from Microsemi is a hermetically sealed, metallurgically bonded surface-mount Zener diode in DO-213AB (MELF/LL41) package, rated for 1 W DC power dissipation, with nominal Zener voltage of 110 V at 2.3 mA test current, dynamic impedance of 750 Ω at IZT, and maximum reverse leakage current of 0.25 µA at 83.6 V. It is qualified to MIL-PRF-19500/115 JANTXV level for high-reliability aerospace and defense power regulation.
For engineers reviewing the 1N3045BUR-1 datasheet, 1N3045BUR-1 pinout, 1N3045BUR-1 application, or 1N3045BUR-1 equivalent, key selection factors include its 110 V Zener voltage tolerance (±5%), low thermal resistance (50 °C/W), radiation-hardened construction, RoHS-compliant option availability, and suitability for precision voltage reference and overvoltage protection in harsh-environment analog power supplies.
Technical Context
This device operates as a two-terminal voltage regulator in reverse-biased breakdown mode, with Zener voltage specified at 110 V ±5% under 2.3 mA test current (IZT) and 25 °C ambient. Its metallurgically enhanced internal contact design reduces thermal resistance and improves long-term stability under thermal cycling.
The DO-213AB glass MELF package provides hermetic sealing, low parasitic capacitance, and axial coefficient of expansion (+6 ppm/°C) matched to common PCB substrates. It supports solder reflow up to 260 °C for 10 s and exhibits inherent ESD insensitivity and radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 110 V ±5% at 2.3 mA - defines precise regulation point for high-voltage reference circuits |
| Power Dissipation (PD) | 1.0 W - enables stable operation in compact SMT layouts without forced cooling |
| Dynamic Impedance (ZZT) | 750 Ω at IZT - indicates moderate regulation stiffness; suitable for non-critical reference loads |
| Reverse Leakage (IR) | 0.25 µA at 83.6 V - ensures minimal quiescent current in standby or high-impedance bias networks |
| Junction Temp Range | –55 °C to +175 °C - supports operation in extended-temperature military and avionics systems |
| Thermal Resistance (RθJEC) | 50 °C/W - allows direct thermal path to end cap; critical for reliability in high-power pulse conditions |
| Forward Voltage (VF) | 1.2 V at 200 mA - defines conduction threshold for polarity-sensitive protection configurations |
Pinout & Package
DO-213AB (MELF/LL41) glass hermetic package with axial symmetry and cathode band marking. Terminals are non-polarized metallized ends; cathode is identified by a single dark band. Mounting requires matching coefficient of expansion (COE ≈ +6 ppm/°C) on PCB substrate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Current entry terminal in forward bias; reference node in reverse-bias regulation | Connected to lower-potential side of regulated circuit; must be thermally anchored per COE guidelines |
| Cathode (banded end) | Current exit terminal in forward bias; Zener regulation node in reverse bias | Connected to higher-potential side; serves as stable 110 V reference output when reverse-biased |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments |
| Metallurgically bonded junction | Reduces interfacial thermal resistance and improves power-cycle reliability vs. solder-bonded alternatives |
| JANTXV qualification per MIL-PRF-19500/115 | Validated screening, lot traceability, and failure rate data for mission-critical defense electronics |
| Radiation hardness (per MicroNote 050) | Withstands total ionizing dose (TID) levels sufficient for low-earth orbit satellite power conditioning |
| RoHS-compliant option (e3 suffix) | Matte-tin finish on copper-clad steel leads meets EU Directive 2011/65/EU for commercial-grade variants |
Applications
| High-Voltage Reference Supply | Aerospace Power Monitor |
|---|---|
Use Scenario: Generating stable 110 V reference for ADC input scaling in 270 VDC aircraft distribution systems. IC Role / Device Role / Timing Role: Two-terminal passive voltage reference providing fixed regulation point independent of load current variation. Use Value: Maintains <0.25 µA leakage at 76% of VZ, minimizing error contribution in high-impedance divider networks. |
Use Scenario: Monitoring bus voltage integrity in flight control actuator power modules operating across –55 °C to +125 °C. IC Role / Device Role / Timing Role: Overvoltage clamp protecting downstream FET gate drivers during transient surges. Use Value: JANTXV qualification ensures parameter stability and zero infant mortality under thermal shock and vibration stress. |
| Nuclear Instrumentation Bias | Industrial HV Sensor Interface |
Use Scenario: Supplying bias voltage to Geiger-Müller tube anodes in radiation detection field instruments. IC Role / Device Role / Timing Role: High-impedance, low-leakage Zener source delivering stable 110 V in battery-powered portable units. Use Value: Hermetic seal prevents outgassing-induced gain shift; radiation hardness avoids parametric degradation in mixed-field environments. |
Use Scenario: Level-shifting and clamping signal paths in 100 V industrial current-sense amplifiers. IC Role / Device Role / Timing Role: Precision voltage clamp limiting amplifier input swing to prevent saturation or latch-up. Use Value: 750 Ω dynamic impedance ensures predictable clamping behavior under fast-rising transients up to 1 kW peak power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4764A | 110 V ±5%, 1 W, DO-41 package, commercial grade only, no MIL qualification | Lacks JANTXV screening, hermetic seal, and radiation hardness; unsuitable for aerospace or nuclear use | Select when cost-sensitive industrial designs require same VZ but do not demand extended temp or reliability validation |
| SMF110A | 110 V, 400 W peak power, SOD-123FL package, TVS diode with 150 V clamping voltage | Designed for transient suppression, not precision regulation; higher leakage (>1 µA) and looser voltage tolerance | Choose only for surge protection where 1N3045BUR-1's stable DC regulation is unnecessary |
Compared with 1N4764A and SMF110A, the 1N3045BUR-1 uniquely combines MIL-qualified reliability, hermetic stability, and tight DC regulation-making it irreplaceable in applications requiring validated long-term parametric consistency under thermal, radiation, and mechanical stress.
Availability
1N3045BUR-1 is available at Aetrix Electronics and suitable for aerospace power monitoring, nuclear instrumentation biasing, and industrial high-voltage sensor interfaces requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for 1N3045BUR-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N3045BUR-1 belongs to Microsemi's legacy MIL-PRF-19500/115 qualified Zener diode family, engineered specifically for precision voltage regulation in mission-critical systems where parameter stability, hermetic integrity, and environmental survivability are non-negotiable.
FAQ
What is the Zener voltage tolerance and test condition for the 1N3045BUR-1?
The 1N3045BUR-1 has a nominal Zener voltage of 110 V with a ±5% tolerance, measured at a test current (IZT) of 2.3 mA and ambient temperature of 25 °C. This tolerance reflects the full range of production units qualified to MIL-PRF-19500/115 JANTXV standards, and the device maintains this specification across its operational junction temperature range of –55 °C to +175 °C.
Is the 1N3045BUR-1 suitable for surface-mount reflow assembly?
Yes, the 1N3045BUR-1 is qualified for surface-mount reflow soldering with a maximum solder temperature of 260 °C for 10 seconds, per MIL-STD-750 Method 2026. Its DO-213AB glass MELF package and matte-tin or tin/lead terminations ensure reliable wetting and joint integrity, provided the PCB pad layout follows the recommended dimensions (A = 7.00 mm, B = 1.8 mm, C = 2.8 mm).
Does the 1N3045BUR-1 have radiation hardness certification?
Yes, the 1N3045BUR-1 exhibits inherent radiation hardness as documented in Microsemi MicroNote 050. While not individually certified to a specific TID level, its hermetically sealed glass construction and metallurgically bonded junction provide proven resilience against total ionizing dose effects-making it suitable for low-earth orbit satellite power conditioning and nuclear instrumentation where parametric stability under irradiation is required.
What is the maximum reverse leakage current for the 1N3045BUR-1 and at what voltage is it specified?
The 1N3045BUR-1 has a maximum reverse leakage current (IR) of 0.25 µA, specified at a reverse voltage (VR) of 83.6 V-equivalent to 76% of its nominal 110 V Zener voltage. This ultra-low leakage ensures minimal loading in high-impedance reference dividers and supports accurate voltage scaling in precision analog measurement circuits.
How does the thermal resistance of the 1N3045BUR-1 impact its power derating?
The 1N3045BUR-1 has a thermal resistance junction-to-end cap (RθJEC) of 50 °C/W. This value governs its linear power derating curve: full 1.0 W dissipation is allowed up to 125 °C end-cap temperature, decreasing linearly to zero at 175 °C. Effective thermal anchoring of the end cap to a copper pour or heatsink is essential to maintain safe junction temperatures under continuous operation.
1N3045BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 110 V
- Tolerance:
- ±5%
- Power - Max:
- 1 W
- Impedance (Max) (Zzt):
- 450 Ohms
- Current - Reverse Leakage @ Vr:
- 10 µA @ 83.6 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N3045BUR-1/TR FAQ
1.How can I place an order for 1N3045BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3045BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3045BUR-1/TR reliable?
The price and inventory of 1N3045BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3045BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N3045BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3045BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3045BUR-1/TR?
1N3045BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3045BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3045BUR-1/TR?
For technical support, including 1N3045BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3045BUR-1/TR requirements.
6.How does Aetrix verify that 1N3045BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N3045BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3045BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N3045BUR-1/TR?
All 1N3045BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3045BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3045BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N3045BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3045BUR-1/TR Tags
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