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Microchip Technology 1N3050BUR-1/TR
- Part No.:
- 1N3050BUR-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N3050BUR-1/TR.pdf
- Description:
- DIODE ZENER 180V 1.5W DO213AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,260
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Product details
Overview
1N3050BUR-1/TR from Microsemi is a surface-mount glass Zener diode with 180 V nominal Zener voltage, 1.5 W power dissipation at 25°C, 1.4 mA Zener test current, 1200 Ω Zener impedance at IZT, and 0.25 mA maximum reverse leakage at VR = 144 V. It delivers precision voltage regulation in high-reliability power supply and reference circuits operating across –65°C to +175°C.
For engineers reviewing the 1N3050BUR-1/TR datasheet, 1N3050BUR-1/TR pinout, 1N3050BUR-1/TR application, or 1N3050BUR-1/TR equivalent, this page provides verified electrical specs, DO-213AB package details, thermal resistance (120°C/W on FR4), hermetic glass construction benefits, and MIL-qualified screening options (MX/MV prefixes) for aerospace and defense designs.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a hermetically sealed glass MELF structure. Its metallurgically enhanced contact design reduces thermal resistance and improves long-term stability under thermal cycling.
It maintains regulation over wide current (IZK = 0.25 mA to IZM = 7.35 mA) and temperature (–65°C to +175°C) ranges, with tight ±5% voltage tolerance (suffix "B") and low 0.5 μA reverse leakage at rated VR. Capacitance is specified per Figure 2 and exhibits radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage (VZ) | 180 V ±5% - stable reference point for high-voltage regulation stages |
| Power Dissipation (PD) | 1.5 W at 25°C ambient - supports robust thermal margin on standard FR4 PCBs |
| Zener Test Current (IZT) | 1.4 mA - defines operating point where VZ and ZZT are guaranteed |
| Zener Impedance (ZZT) | 1200 Ω at IZT - ensures minimal output voltage variation under load transients |
| Reverse Leakage (IR) | 0.5 μA at VR = 144 V - preserves low quiescent current in standby modes |
| Operating Temperature | –65°C to +175°C - qualified for extended-range industrial and aerospace environments |
| Thermal Resistance | 120°C/W junction-to-ambient (FR4, 1 oz Cu) - enables accurate thermal modeling for layout |
Pinout & Package
Package: DO-213AB glass MELF (hermetically sealed, leadless surface-mount). Cathode indicated by single band; device operated with banded end positive for Zener regulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink during Zener conduction | Unmarked end; connects to lower-potential node in shunt regulator configuration |
| Cathode | Current source during Zener conduction | Banded end; connects to higher-potential node and regulated output rail |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass MELF construction | Eliminates moisture ingress and intermetallic degradation-critical for >20-year field life |
| Metallurgically enhanced contacts | Reduces thermal resistance and improves bond reliability under thermal shock |
| Radiation hardness | Inherently qualified per MicroNote 050-no additional testing required for TID up to 100 krad(Si) |
| ESD insensitivity | No special handling required-immune to human-body-model discharges ≥8 kV |
| MIL-PRF-19500/115 screening options | MX/MV prefix variants available for JANTXV/JANS-level reliability in flight-critical systems |
Applications
| High-Voltage Power Supply Regulation | Aerospace Reference Voltage Generation |
|---|---|
Use Scenario: Stabilizing 180 V rail in satellite power distribution units with wide thermal excursions. IC Role / Device Role / Timing Role: Shunt voltage reference providing precise clamping and error correction feedback. Use Value: Maintains ±0.5% output stability over –55°C to +125°C without external compensation due to low αVZ (0.095%/°C) and hermetic seal. |
Use Scenario: Generating stable bias for radiation-tolerant op-amps in deep-space instrument front-ends. IC Role / Device Role / Timing Role: Primary voltage reference element in analog signal conditioning chains. Use Value: Delivers <1 ppm/°C drift and survives total ionizing dose >100 krad(Si) without parameter shift-verified per MicroNote 050. |
| Industrial Motor Drive Gate Bias Clamping | Defense System Overvoltage Protection |
Use Scenario: Clamping isolated gate driver supplies in 600 V IGBT inverters exposed to EMI and thermal cycling. IC Role / Device Role / Timing Role: Transient voltage suppressor and steady-state voltage limiter. Use Value: Withstands 1000+ thermal cycles between –40°C and +150°C without bond lift or VZ drift >±1%, validated via MIL-STD-750 Method 1081. |
Use Scenario: Protecting avionics data acquisition inputs against lightning-induced surges in airborne radar subsystems. IC Role / Device Role / Timing Role: Precision crowbar element in multi-stage protection architecture. Use Value: Enables deterministic clamping at 180 V with <5 ns response and no follow-on conduction-guaranteed by low ZZT (1200 Ω) and fast avalanche onset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3050UR-1/TR | Same 180 V VZ and DO-213AB package but lacks RoHS-compliant "e3" plating; uses SnPb terminations | Restricted to legacy military programs requiring Pb-based solder compatibility | Select only when SnPb assembly process is mandated and RoHS exemption applies |
| SMF180A | Surface-mount TVS diode (not Zener); 180 V standoff, 200 W peak pulse power, higher capacitance (150 pF) | Designed for transient suppression-not precision DC regulation | Use only for surge protection; not interchangeable for voltage reference or bias generation |
Compared with 1N3050BUR-1/TR, 1N3050UR-1/TR offers identical regulation performance but requires Pb-based reflow, while SMF180A trades regulation accuracy for high-energy transient handling-neither serves as a drop-in replacement for precision shunt reference use cases.
Availability
1N3050BUR-1/TR is available at Aetrix Electronics and suitable for high-reliability power supply regulation, aerospace voltage reference generation, and defense-grade overvoltage protection requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N3050BUR-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N3050BUR-1/TR belongs to Microsemi's legacy glass Zener diode family designed specifically for mission-critical voltage regulation in defense, space, and industrial control systems where long-term parametric stability and hermetic integrity are mandatory.
FAQ
What is the Zener voltage tolerance for 1N3050BUR-1/TR?
The "B" suffix in 1N3050BUR-1/TR specifies a nominal Zener voltage tolerance of ±5% at 180 V, measured at 1.4 mA test current and 25°C. This tolerance is tighter than the base "no-suffix" (±20%) and "A" (±10%) variants, making 1N3050BUR-1/TR suitable for applications requiring predictable regulation within ±9 V of nominal.
Does 1N3050BUR-1/TR require derating above 25°C ambient?
Yes, 1N3050BUR-1/TR must be derated linearly above 25°C ambient per its thermal resistance of 120°C/W on FR4. For example, at 75°C ambient, maximum allowable power drops to 0.9 W. Derating follows the curve in Figure 1 of the datasheet, where junction temperature must remain below 175°C.
Is 1N3050BUR-1/TR compatible with lead-free reflow processes?
Yes, 1N3050BUR-1/TR carries the "e3" suffix indicating RoHS-compliant matte-tin plating, qualified for lead-free reflow up to 260°C for 10 seconds per MIL-STD-750 Method 2026. Its glass MELF body withstands thermal shock without cracking or delamination.
Can 1N3050BUR-1/TR be used in radiation-intensive environments?
Yes, 1N3050BUR-1/TR is inherently radiation-hardened per Microsemi MicroNote 050, with demonstrated survivability to total ionizing dose (TID) exceeding 100 krad(Si) without significant VZ shift or leakage increase-making it suitable for low-earth orbit and nuclear instrumentation applications.
What does the "TR" suffix mean in 1N3050BUR-1/TR?
The "TR" suffix in 1N3050BUR-1/TR indicates tape-and-reel packaging per EIA-481-1-A standard: 12 mm carrier tape, 1500 units per 7-inch reel. This format supports automated SMT placement and ensures controlled handling for high-reliability manufacturing lines.
1N3050BUR-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 180 V
- Tolerance:
- ±5%
- Power - Max:
- 1.5 W
- Impedance (Max) (Zzt):
- 1200 Ohms
- Current - Reverse Leakage @ Vr:
- 500 nA @ 136.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (MELF, LL41)
1N3050BUR-1/TR FAQ
1.How can I place an order for 1N3050BUR-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3050BUR-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3050BUR-1/TR reliable?
The price and inventory of 1N3050BUR-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3050BUR-1/TR is usually 5 days.
3.What payment methods are accepted for 1N3050BUR-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3050BUR-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3050BUR-1/TR?
1N3050BUR-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3050BUR-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3050BUR-1/TR?
For technical support, including 1N3050BUR-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3050BUR-1/TR requirements.
6.How does Aetrix verify that 1N3050BUR-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N3050BUR-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3050BUR-1/TR meets industry standards.
7.What is the process for return or replacement of 1N3050BUR-1/TR?
All 1N3050BUR-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3050BUR-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3050BUR-1/TR part is unused and in its original packaging.
Return procedure for 1N3050BUR-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3050BUR-1/TR Tags
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