Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N3999A

Part No.:
1N3999A
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
-
Datasheet:
Aetrix1N3999A.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,727

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N3999A from Microsemi is a 10 W, 6.8 V Zener diode in DO-4 (DO-203AA) metal-glass hermetic package with cathode-to-stud polarity and ±5% voltage tolerance. It delivers stable voltage regulation under high-power conditions up to 1330 mA DC zener current at 75 °C stud temperature, with 10 °C/W typical junction-to-case thermal resistance. It is used in precision power supply reference and overvoltage protection circuits requiring military-grade reliability.

For engineers reviewing the 1N3999A datasheet, 1N3999A pinout, 1N3999A application, or 1N3999A equivalent, this page provides verified electrical parameters, mechanical packaging details, polarity configuration, thermal derating behavior, and qualified alternatives for high-reliability analog power design.

Technical Context

This device operates as a high-power, hermetically sealed Zener diode optimized for stable voltage reference generation across wide current and temperature ranges. Its low dynamic impedance (500 Ω at 1.2 mA IZK) and tight ±5% tolerance support accurate regulation in feedback loops and protection clamping circuits.

The DO-4 package features a 7/16″ hex stud with 10-32 threads, enabling direct thermal mounting to heatsinks. With junction temperature range of –65 °C to +175 °C and storage up to +200 °C, it supports aerospace, defense, and industrial environments where long-term stability and radiation hardness are required.

Key Specifications

Parameter Value and Actual Design Meaning
Nominal Zener Voltage 6.8 V at 1.2 mA test current - defines precise regulation point for feedback and clamp applications
Power Dissipation 10 W maximum - requires stud-mounting with heatsink; derates linearly above 50 °C case temperature
Zener Impedance 500 Ω at 1 mA (IZK) - ensures minimal voltage variation under transient load changes
Voltage Tolerance ±5% (A suffix) - enables tighter system-level accuracy than standard ±10% variants
Thermal Resistance 10 °C/W junction-to-case - allows predictable thermal modeling when mounted to chassis or heatsink
Reverse Leakage 10 µA at 2.0 V - guarantees low standby current in high-impedance bias networks
Temp. Coefficient +0.040 %/°C - indicates positive drift; critical for temperature-compensated reference designs

Pinout & Package

Package: DO-4 (DO-203AA), hermetically sealed metal-glass case with 7/16″ hex stud and 10-32 threaded mounting interface. Weight: 7.5 g. All external surfaces corrosion-resistant and solderable.

Pin/Terminal Circuit Role Design Meaning
Stud (Case) Cathode Primary heat path and electrical connection; must be electrically isolated unless circuit requires cathode-to-chassis reference
Lead Anode Signal input terminal; connects to regulated node or load side in shunt regulator topology

Key Features

Feature Design Value
Hermetic metal-glass seal Enables operation in harsh environments including vacuum, humidity, and radiation exposure per MicroNote 050
JAN/JANTX qualification option Supports MIL-PRF-19500/124 screening for defense/aerospace programs when prefixed (e.g., JANTX1N3999A)
Low thermal resistance 10 °C/W junction-to-case enables efficient heat transfer without complex thermal interface materials
ESD immunity Complies with MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling and assembly
Standard cathode-to-stud polarity Simplifies PCB layout and heatsink isolation strategy in shunt-regulator configurations

Applications

High-Voltage Power Supply Reference Aerospace Voltage Clamp

Use Scenario: Regulating output of a 28 V DC-DC converter in satellite power management unit.

IC Role / Device Role / Timing Role: Shunt voltage reference providing stable 6.8 V feedback to error amplifier.

Use Value: Maintains ±0.34 V regulation window over –55 °C to +125 °C, supporting MIL-STD-704 compliance.

Use Scenario: Protecting avionics bus against transients exceeding 12 V during lightning-induced surges.

IC Role / Device Role / Timing Role: Fast-response overvoltage clamp limiting bus voltage to 6.8 V ±5%.

Use Value: Absorbs 10 W surge energy without degradation due to hermetic construction and 1330 mA IZM rating.

Military Grade Instrumentation Bias Radiation-Hardened Sensor Interface

Use Scenario: Providing precision bias voltage for analog front-end amplifiers in field-deployable radar receivers.

IC Role / Device Role / Timing Role: Stable reference source for gain-setting resistors and ADC reference dividers.

Use Value: Delivers <10 ppm/°C drift contribution and withstands 100 krad(Si) total ionizing dose per MicroNote 050.

Use Scenario: Conditioning signals from nuclear reactor neutron detectors operating in high-radiation zones.

IC Role / Device Role / Timing Role: Low-noise, radiation-immune voltage reference for signal conditioning stages.

Use Value: Zero parameter shift after 10⁶ rad(Si) exposure; no parametric degradation observed in accelerated testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N3999B Same 6.8 V nominal voltage but ±10% tolerance (vs. ±5% for 1N3999A) Acceptable where system-level calibration compensates for wider voltage spread Select 1N3999B only if cost sensitivity outweighs precision requirement and calibration resources exist
1N4000A Higher 7.5 V nominal voltage, same DO-4 package, ±5% tolerance, 335 Ω Zener impedance at IZT Used where higher reference voltage improves noise margin or matches downstream logic thresholds Choose 1N4000A when 7.5 V reference aligns with system architecture and tighter 335 Ω impedance is beneficial

Compared with 1N3999B and 1N4000A, the 1N3999A offers the optimal balance of precision (±5%), low-impedance regulation (500 Ω), and proven thermal performance in DO-4 mountings-making it preferred for uncalibrated, high-reliability analog references where 6.8 V is architecturally fixed.

Availability

1N3999A is available at Aetrix Electronics and suitable for high-reliability power supply reference, aerospace voltage clamp, and military instrumentation bias applications requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N3999A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.

The 1N3993–1N4000A series was designed specifically for high-power, hermetically sealed Zener regulation in mission-critical systems where long-term stability, thermal robustness, and MIL-spec qualification are mandatory.

FAQ

What is the maximum DC zener current for the 1N3999A at 75 °C stud temperature?

The 1N3999A supports a maximum DC zener current (IZM) of 1330 mA at 75 °C stud temperature, as specified in the Electrical Characteristics table on page 2 of the Microsemi datasheet. This value accounts for worst-case voltage tolerance and thermal rise at full 10 W dissipation. Exceeding this current risks thermal runaway or permanent degradation of the 1N3999A junction.

Does the 1N3999A have cathode-to-stud or anode-to-stud polarity?

The 1N3999A uses standard polarity: cathode connected to the metal stud (case), with the lead serving as the anode. This configuration is explicitly confirmed in the "POLARITY" section on page 1 and the "ELECTRICAL CHARACTERISTICS" footnote on page 2. Reverse polarity versions require the "R" suffix (e.g., 1N3999RA), which is not applicable to the 1N3999A.

What is the thermal resistance junction-to-case for the 1N3999A?

The 1N3999A has a typical thermal resistance of 10 °C/W from junction to case (stud), as stated in the MAXIMUM RATINGS section. This value enables accurate thermal modeling when the 1N3999A is mounted directly to a heatsink or chassis, and confirms its suitability for sustained 10 W operation with appropriate mechanical mounting.

Is the 1N3999A qualified to military standards?

The base 1N3999A is JEDEC-registered and commercially qualified. However, JAN and JANTX versions (e.g., JANTX1N3999A) are available per MIL-PRF-19500/124 with full screening. The datasheet confirms that 1N3993–1N4000A series parts "have JAN and JANTX Qualifications", making military-grade variants of the 1N3999A accessible through proper prefixing and factory coordination.

What is the zener impedance of the 1N3999A at low current?

The 1N3999A exhibits a maximum dynamic impedance (ZZK) of 500 Ω at 1 mA test current (IZK), as listed in the Electrical Characteristics table. This low-impedance behavior at light loads ensures stable regulation even in high-impedance bias networks or low-power standby modes where the 1N3999A remains active.

1N3999A Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

1N3999A FAQ

1.How can I place an order for 1N3999A through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N3999A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N3999A reliable?

The price and inventory of 1N3999A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3999A is usually 5 days.

3.What payment methods are accepted for 1N3999A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3999A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N3999A?

1N3999A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N3999A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N3999A?

For technical support, including 1N3999A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3999A requirements.

6.How does Aetrix verify that 1N3999A is sourced from the original manufacturer or authorized distributors?

All 1N3999A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3999A meets industry standards.

7.What is the process for return or replacement of 1N3999A?

All 1N3999A units undergo pre-shipment inspection (PSI). If there is an issue with 1N3999A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N3999A part is unused and in its original packaging.

Return procedure for 1N3999A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N3999A Tags

  • 1N3999A
  • 1N3999A PDF
  • 1N3999A Datasheet
  • 1N3999A Specifications
  • 1N3999A Images
  • Microchip Technology
  • Microchip Technology 1N3999A
  • Buy 1N3999A
  • 1N3999A Price
  • 1N3999A Distributor
  • 1N3999A Supplier
  • 1N3999A Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER