Microchip Technology 1N4100C

Overview

1N4100C from Microsemi is a 500 mW, 7.5 V ±2% tolerance metallurgically bonded glass Zener diode in DO-35 (DO-204AH) axial-leaded package, qualified to JANTX level per MIL-PRF-19500/435 for high-reliability voltage regulation in aerospace and defense power supplies.

For engineers reviewing the 1N4100C datasheet, 1N4100C pinout, 1N4100C application, or 1N4100C equivalent, this part delivers stable 7.5 V reference with 200 Ω dynamic impedance at 250 mA test current, low 1.0 µA reverse leakage at 5.7 V, and radiation-hardened performance suitable for harsh-environment analog circuits.

Technical Context

The 1N4100C operates as a precision shunt regulator with a nominal Zener voltage of 7.5 V at I_ZT = 250 mA, exhibiting +0.065 %/°C temperature coefficient and 200 Ω dynamic impedance (Z_ZT) under specified test conditions. Its metallurgical bond construction ensures low noise density (1 µV/√Hz typical) and minimal capacitance across the Zener voltage range.

Rated for -65 °C to +175 °C junction temperature, it supports linear derating from 500 mW at 25 °C to zero at 175 °C on standard FR4 PCBs, with thermal resistance of 300 °C/W (junction-to-ambient) and 250 °C/W (junction-to-lead).

Key Specifications

Pinout & Package

DO-35 (DO-204AH) hermetically sealed axial-leaded glass package with cathode indicated by band; banded end is positive during Zener regulation. Leads are tin-lead or RoHS-compliant matte-tin plated, solderable per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with 1N4100-1 and 1N4734A, the 1N4100C provides superior voltage accuracy and environmental ruggedness-critical when replacing legacy 1N4100 variants in upgraded avionics or radiation-exposed instrumentation where ±2% tolerance and JANTX qualification directly impact functional safety compliance.

Availability

1N4100C is available at Aetrix Electronics and suitable for avionics power monitoring, defense radar bias supply, satellite onboard computer reference generation, and nuclear instrumentation requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for 1N4100C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N4100C belongs to Microsemi's legacy MIL-qualified Zener diode family designed specifically for voltage regulation in mission-critical systems where radiation tolerance, thermal stability, and long-term parametric consistency are mandatory.

FAQ

What is the Zener voltage tolerance of the 1N4100C?

The 1N4100C has a nominal Zener voltage of 7.5 V with a ±2% tolerance, meaning its actual regulation voltage falls between 7.35 V and 7.65 V when tested at 250 mA under standard conditions. This tighter tolerance than the ±5% 1N4100-1 variant supports higher-accuracy analog circuits where reference stability is critical.

Is the 1N4100C qualified to military specifications?

Yes, the 1N4100C is qualified to JANTX level per MIL-PRF-19500/435, including screening for temperature cycling, mechanical shock, vibration, and burn-in. It meets requirements for high-reliability applications in aerospace and defense systems where component failure is not acceptable.

What is the maximum power dissipation of the 1N4100C at 70°C ambient temperature?

At 70 °C ambient, the 1N4100C must be derated linearly from 500 mW starting at 50 °C, resulting in a maximum allowable power dissipation of 400 mW. This derating ensures safe junction temperatures remain below 175 °C on standard FR4 PCBs with defined copper pad geometry.

Does the 1N4100C have radiation-hardened characteristics?

Yes, the 1N4100C exhibits inherent radiation hardness as documented in Microsemi MicroNote 050. Its metallurgically bonded structure and glass encapsulation provide tolerance to total ionizing dose (TID), making it suitable for satellite and nuclear instrumentation applications without additional shielding.

What is the reverse leakage current specification for the 1N4100C?

The 1N4100C has a maximum reverse leakage current (I_R) of 1.0 µA at 5.7 V, measured at 25 °C. This low leakage ensures minimal parasitic current draw in high-impedance bias networks and preserves accuracy in precision reference circuits.