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Microchip Technology 1N4101/TR

Part No.:
1N4101/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
DO-204AA, DO-7, Axial
Datasheet:
Aetrix1N4101/TR.pdf
Description:
DIODE ZENER 8.2V 500MW DO7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,524

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Product details

Overview

1N4101/TR from Microsemi is a 500 mW, 8.2 V ±5% Zener diode in DO-35 glass axial package, metallurgically bonded for high-reliability voltage regulation. It delivers 250 mA Zener test current, 200 Ω dynamic impedance at IZT, and operates across –65°C to +175°C junction temperature range in aerospace, defense, and industrial power supply circuits.

For engineers reviewing the 1N4101/TR datasheet, 1N4101/TR pinout, 1N4101/TR application, or 1N4101/TR equivalent, this page provides verified electrical parameters, MIL-PRF-19500/435 qualification status, thermal derating behavior, noise density (1 µV/√Hz), and RoHS-compliant commercial-grade availability with TR tape-and-reel packaging.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable 8.2 V output across wide current (250 mA IZT) and temperature (–65°C to +175°C) ranges. Its metallurgical bond ensures low leakage (<0.5 µA at VR = 6.3 V) and radiation hardness per MicroNote 050.

Designed for precision regulation in high-reliability systems, it exhibits +0.070 %/°C temperature coefficient and minimal capacitance (typical <4 pF at 0 V), enabling low-noise performance in reference and biasing applications where stability under thermal stress is critical.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ8.2 V ±5% at 250 mA - defines regulated output level with tight tolerance for reference accuracy
Power Dissipation500 mW at 25°C - supports continuous regulation in compact axial-leaded designs without forced cooling
Dynamic Impedance ZZT200 Ω at IZT - ensures low output impedance for stable voltage under varying load conditions
Reverse Leakage IR≤0.5 µA at VR = 6.3 V - minimizes standby current loss in battery-backed or low-power circuits
Noise Density ND1 µV/√Hz - enables use in low-noise analog references and precision instrumentation front-ends
Temp Coefficient αVZ+0.070 %/°C - quantifies voltage drift over temperature, critical for wide-range environmental operation
Junction Temp Range–65°C to +175°C - certified for extreme environments including avionics and downhole electronics

Pinout & Package

DO-35 (DO-204AH) hermetically sealed axial-glass package with cathode band marking; tin-lead or RoHS matte-tin plating; weight ≈0.2 g; lead length 25.4–38.1 mm.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential node during Zener operation; used for forward-bias protection or clamping
Cathode (banded end)Zener regulation terminalConnected to higher-potential node; reverse-biased to achieve 8.2 V breakdown regulation

Key Features

FeatureDesign Value
Metallurgical bond constructionEnables JANS-level reliability and radiation hardness per MicroNote 050 for space and nuclear applications
MIL-PRF-19500/435 qualificationValidated to JAN, JANTX, JANTXV, and JANS levels - meets military screening and life-test requirements
Low noise density1 µV/√Hz at 8.2 V - supports precision analog references without external filtering
Hermetic glass sealingPrevents moisture ingress and parameter shift over time - essential for long-life mission-critical systems
RoHS-compliant optione3 suffix available - satisfies environmental compliance without sacrificing electrical performance

Applications

Aerospace Power ConditioningDefense System Reference

Use Scenario: Regulating auxiliary rail voltage in satellite power management units exposed to thermal cycling and radiation.

IC Role / Device Role / Timing Role: Zener diode providing stable 8.2 V reference for ADC biasing and op-amp feedback networks.

Use Value: JANS qualification and radiation hardness ensure uninterrupted operation over 15+ year orbital missions.

Use Scenario: Voltage reference in missile guidance system analog signal chains operating from –55°C to +125°C.

IC Role / Device Role / Timing Role: Precision shunt regulator maintaining reference integrity despite EMI and transient surges.

Use Value: 200 Ω dynamic impedance and <0.5 µA leakage preserve accuracy under wide temperature and load variation.

Industrial Sensor ExcitationMedical Equipment Biasing

Use Scenario: Supplying excitation voltage to strain gauge bridges in oil & gas downhole pressure transducers.

IC Role / Device Role / Timing Role: Stable 8.2 V Zener source for ratiometric measurement circuits requiring long-term drift stability.

Use Value: +0.070 %/°C tempco and hermetic DO-35 package minimize calibration drift over 10+ years of field service.

Use Scenario: Providing regulated bias for photodiode amplifiers in portable ultrasound imaging front-ends.

IC Role / Device Role / Timing Role: Low-noise (1 µV/√Hz) shunt reference ensuring SNR integrity in sensitive analog acquisition paths.

Use Value: Minimal capacitance (<4 pF) avoids phase shift in high-frequency transducer signal conditioning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4101USSame 8.2 V, 500 mW, DO-213AA surface-mount package; no axial leadsRequires PCB rework for SMT assembly; eliminates through-hole mountingSelect when board space is constrained and automated placement is required
1N4738A8.2 V, 1 W, DO-41 package; higher power but wider tolerance (±5% vs same); no MIL qualificationNot suitable for high-reliability or radiation-hardened systemsSelect only for commercial-grade cost-sensitive applications without qualification requirements

Compared with 1N4101US and 1N4738A, the 1N4101/TR uniquely combines MIL-PRF-19500/435 JANTXV qualification, DO-35 axial form factor, and 1 µV/√Hz noise performance - making it irreplaceable in aerospace and defense voltage reference designs where reliability and spectral purity are non-negotiable.

Availability

1N4101/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense system reference, and industrial sensor excitation requiring stable component supply across extended temperature and radiation environments.

Supply support for 1N4101/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N4101/TR belongs to Microsemi's legacy 500 mW Zener diode family designed specifically for MIL-qualified voltage regulation in mission-critical systems where parameter stability, radiation tolerance, and long-term hermetic integrity are mandatory.

FAQ

What is the Zener voltage tolerance of the 1N4101/TR?

The 1N4101/TR has a nominal Zener voltage of 8.2 V with a standard tolerance of ±5%, as specified in the Electrical Characteristics table on page 3 of the T4-LDS-0245-2 datasheet. This tolerance applies under standard test conditions at 25°C with 250 mA Zener test current. The 1N4101/TR does not carry C (±2%) or D (±1%) suffixes, confirming its 5% tolerance grade.

Is the 1N4101/TR qualified to military standards?

Yes, the 1N4101/TR is qualified per MIL-PRF-19500/435 and available in JAN, JANTX, JANTXV, and JANS reliability levels. Its metallurgical bond construction and hermetic DO-35 package meet stringent screening, life testing, and environmental requirements defined in the specification - confirmed in the DESCRIPTION section on page 1 of the T4-LDS-0245-2 datasheet.

What is the maximum reverse leakage current for the 1N4101/TR?

The 1N4101/TR exhibits a maximum reverse leakage current (IR) of 0.5 µA at VR = 6.3 V, as listed in the Electrical Characteristics table on page 3 of the T4-LDS-0245-2 datasheet. This low leakage supports energy-efficient operation in battery-powered or standby circuits where quiescent current must be minimized.

Does the 1N4101/TR have RoHS compliance?

Yes, RoHS-compliant versions of the 1N4101/TR are available with the "e3" suffix (e.g., 1N4101/TR e3), using annealed matte-tin plating. Per the MECHANICAL and PACKAGING section on page 2, RoHS compliance is offered for commercial-grade units only and remains solderable per MIL-STD-750 method 2026.

What is the thermal resistance and derating behavior of the 1N4101/TR?

The 1N4101/TR has a thermal resistance of 250°C/W junction-to-lead (RθJL) at 3/8″ lead length and linearly derates from 500 mW at 25°C ambient to zero at 175°C, as shown in Figure 2. Derating begins at 50°C lead temperature, with power reduced by 6.25 mW/°C above that point - critical for thermal design in enclosed or high-temperature enclosures.

1N4101/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AA, DO-7, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
8.2 V
Tolerance:
±5%
Power - Max:
500 mW
Impedance (Max) (Zzt):
200 Ohms
Current - Reverse Leakage @ Vr:
1 µA @ 6.24 V
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Operating Temperature:
-65°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-7 (DO-204AA)

1N4101/TR FAQ

1.How can I place an order for 1N4101/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N4101/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N4101/TR reliable?

The price and inventory of 1N4101/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4101/TR is usually 5 days.

3.What payment methods are accepted for 1N4101/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4101/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N4101/TR?

1N4101/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N4101/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N4101/TR?

For technical support, including 1N4101/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4101/TR requirements.

6.How does Aetrix verify that 1N4101/TR is sourced from the original manufacturer or authorized distributors?

All 1N4101/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4101/TR meets industry standards.

7.What is the process for return or replacement of 1N4101/TR?

All 1N4101/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4101/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N4101/TR part is unused and in its original packaging.

Return procedure for 1N4101/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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