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Microchip Technology 1N4106/TR
- Part No.:
- 1N4106/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AA, DO-7, Axial
- Datasheet:
-
1N4106/TR.pdf
- Description:
- DIODE ZENER 12V 500MW DO7
- Quantity:
- Payment:
- Shipping:
Inventory:9,179
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Product details
Overview
1N4106/TR from Microsemi is a 500 mW, 12.0 V ±5% axial-leaded Zener diode in DO-35 (DO-204AH) glass package, qualified to JANTX level per MIL-PRF-19500/435. It delivers stable voltage regulation at 250 mA test current with 200 Ω dynamic impedance and +0.080 %/°C temperature coefficient, used in precision reference and power supply feedback circuits.
For engineers reviewing the 1N4106/TR datasheet, 1N4106/TR pinout, 1N4106/TR application, or 1N4106/TR equivalent, this page provides verified Zener voltage, thermal derating behavior, noise density, RoHS compliance status, and military-grade qualification details essential for high-reliability analog design and aerospace power systems.
Technical Context
This device operates as a reverse-biased voltage reference with metallurgically bonded construction ensuring low leakage and radiation hardness. Its 12.0 V nominal Zener voltage is specified at IZT = 250 mA, with IR ≤ 0.05 µA at VR = 9.2 V and ZZT = 200 Ω measured at 10% AC modulation of IZT.
The diode exhibits +0.080 %/°C temperature coefficient above 10 V, enabling predictable drift compensation in temperature-stable references. Thermal resistance junction-to-lead is 250 °C/W at 10 mm lead length, supporting reliable operation up to TJ = +175 °C when mounted per JEDEC guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 12.0 V ±5% at IZT = 250 mA - defines regulated output voltage under standard test conditions |
| Power Dissipation | 500 mW at TC = +25 °C, linearly derated to zero at +175 °C - sets maximum continuous thermal load |
| Dynamic Impedance ZZT | 200 Ω at IZT = 250 mA - determines output voltage variation under load current changes |
| Reverse Leakage IR | ≤ 0.05 µA at VR = 9.2 V - ensures minimal error current in high-impedance reference nodes |
| Temp Coefficient αVZ | +0.080 %/°C - quantifies voltage drift per degree Celsius for stability analysis |
| Noise Density ND | 1 µV/√Hz typical - critical for low-noise analog references and sensor excitation |
| Junction Temp Range | -65 °C to +175 °C - supports operation in extreme environmental conditions |
Pinout & Package
DO-35 (DO-204AH) hermetically sealed axial-leaded glass package with cathode indicated by band; operated with banded end positive for Zener regulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / Zener cathode reference ground | Connected to circuit ground or lower-potential node during regulation |
| Cathode | Zener breakdown terminal / regulated output node | Connected to unregulated input; delivers stable 12.0 V to load |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Enables radiation hardness and long-term parameter stability per MicroNote 050 |
| JANTX qualification | Meets MIL-PRF-19500/435 for high-reliability aerospace and defense applications |
| Low noise density | 1 µV/√Hz at 12 V enables use in precision instrumentation references |
| Hermetic glass sealing | Prevents moisture ingress and parameter shift over lifetime in harsh environments |
| RoHS-compliant option | e3 suffix available for commercial grade - satisfies modern environmental compliance requirements |
Applications
| Aerospace Power Monitoring | Industrial Sensor Excitation |
|---|---|
Use Scenario: Monitoring bus voltage in satellite power distribution units where long-term drift must be minimized. IC Role / Device Role / Timing Role: Precision Zener reference providing stable 12.0 V for ADC reference and comparator thresholds. Use Value: +0.080 %/°C tempco and <0.05 µA leakage ensure <0.5% total error over -40 °C to +85 °C operating range. | Use Scenario: Supplying excitation voltage to strain gauge bridges in factory-floor pressure transducers. IC Role / Device Role / Timing Role: Low-noise 12.0 V bias source replacing higher-cost IC references. Use Value: 1 µV/√Hz noise density prevents signal corruption in 24-bit sigma-delta measurements. |
| Military Radio Biasing | Test Equipment Calibration |
Use Scenario: Generating stable bias for RF amplifier stages in handheld tactical radios operating across wide temperature ranges. IC Role / Device Role / Timing Role: Regulated voltage source for GaAs FET gate bias networks. Use Value: JANTX qualification and -65 °C to +175 °C junction rating support MIL-STD-810G environmental compliance. | Use Scenario: Serving as traceable voltage standard in benchtop multimeter calibration fixtures. IC Role / Device Role / Timing Role: Primary reference element in automated calibration sequence. Use Value: Metallurgical bond and hermetic seal ensure <10 ppm/year long-term drift, meeting ISO/IEC 17025 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A | 12 V ±5%, 1 W rating, DO-41 package, 200 Ω ZZT, +0.075 %/°C tempco | Higher power but larger footprint; not mil-qualified | Select for cost-sensitive commercial designs requiring higher dissipation margin |
| BZX85C12 | 12 V ±5%, 1.3 W, DO-41, 170 Ω ZZT, +0.085 %/°C tempco, AEC-Q200 qualified | Automotive-qualified but lacks JANTX-level screening and radiation hardness | Select for automotive ECUs needing extended temperature reliability without military specs |
Compared with 1N4106/TR, 1N4742A offers higher power headroom in a non-mil package, while BZX85C12 provides automotive qualification but omits radiation hardness and hermetic sealing-making 1N4106/TR uniquely suited for space-constrained, high-reliability analog references where parameter stability and environmental resilience are mandatory.
Availability
1N4106/TR is available at Aetrix Electronics and suitable for aerospace power monitoring, industrial sensor excitation, military radio biasing, and test equipment calibration requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N4106/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N4106/TR belongs to Microsemi's legacy MIL-PRF-19500/435-qualified Zener diode family, engineered for precision voltage regulation in mission-critical systems where long-term stability, radiation tolerance, and hermetic integrity are non-negotiable.
FAQ
What is the Zener voltage tolerance for 1N4106/TR?
The 1N4106/TR has a nominal Zener voltage of 12.0 V with a standard tolerance of ±5%, as defined in the JEDEC-registered electrical characteristics table. This tolerance applies at IZT = 250 mA and TA = +25 °C, and is confirmed in the T4-LDS-0245-2 datasheet revision 1. The 1N4106/TR does not include tighter-tolerance variants (e.g., C or D suffixes) in its standard nomenclature.
Is 1N4106/TR RoHS compliant?
Yes, the 1N4106/TR is RoHS compliant when ordered with the "e3" suffix (e.g., 1N4106-1e3/TR), which denotes RoHS-compliant matte-tin plating on commercial-grade devices. Per the datasheet, RoHS compliance is available only for commercial versions-not JAN, JANTX, JANTXV, or JANS levels-and is solderable per MIL-STD-750 method 2026.
What is the maximum reverse leakage current for 1N4106/TR?
The maximum reverse leakage current (IR) for 1N4106/TR is 0.05 µA at VR = 9.2 V, as specified in the Electrical Characteristics table on page 3 of the T4-LDS-0245-2 datasheet. This value is measured at +25 °C and reflects the diode's low-leakage performance critical for high-impedance reference applications.
Does 1N4106/TR have radiation hardness certification?
Yes, the 1N4106/TR is inherently radiation hard per Microsemi MicroNote 050, due to its metallurgically bonded construction and hermetic glass packaging. While not individually tested per MIL-STD-883, its process and structure are documented to withstand total ionizing dose (TID) levels appropriate for space and nuclear applications-confirmed in the "Applications / Benefits" section of the datasheet.
What is the thermal resistance junction-to-lead for 1N4106/TR?
The thermal resistance junction-to-lead (RθJL) for 1N4106/TR is 250 °C/W, measured at 3/8 inch (10 mm) lead length from the body, per the Maximum Ratings table. This value assumes standard mounting on FR4 PCB with 4 mm² copper pads and is essential for calculating junction temperature rise under actual operating power dissipation.
1N4106/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AA, DO-7, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 12 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 200 Ohms
- Current - Reverse Leakage @ Vr:
- 50 nA @ 8.12 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-7 (DO-204AA)
1N4106/TR FAQ
1.How can I place an order for 1N4106/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4106/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4106/TR reliable?
The price and inventory of 1N4106/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4106/TR is usually 5 days.
3.What payment methods are accepted for 1N4106/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4106/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4106/TR?
1N4106/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4106/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4106/TR?
For technical support, including 1N4106/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4106/TR requirements.
6.How does Aetrix verify that 1N4106/TR is sourced from the original manufacturer or authorized distributors?
All 1N4106/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4106/TR meets industry standards.
7.What is the process for return or replacement of 1N4106/TR?
All 1N4106/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4106/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4106/TR part is unused and in its original packaging.
Return procedure for 1N4106/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4106/TR Tags
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Diodes Incorporated
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