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Microchip Technology 1N4124-1
- Part No.:
- 1N4124-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4124-1.pdf
- Description:
- DIODE ZENER 43V 500MW DO204AH
- Quantity:
- Payment:
- Shipping:
Inventory:5,304
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Product details
Overview
1N4124-1 from Microsemi is a 500 mW, 43.0 V Zener diode in DO-35 glass package, qualified to JANS level per MIL-PRF-19500/435. It delivers ±5% voltage tolerance, 250 mA test current, 250 Ω dynamic impedance at 25 °C, and operates across –65 to +175 °C for precision voltage regulation in aerospace power supplies.
For engineers reviewing the 1N4124-1 datasheet, 1N4124-1 pinout, 1N4124-1 application, or 1N4124-1 equivalent, this page provides verified Zener voltage, thermal resistance (250 °C/W junction-to-lead), noise density (1 µV/√Hz), max reverse leakage (0.01 µA @ 32.7 V), and JANS-level qualification status - all critical for high-reliability analog reference design.
Technical Context
The 1N4124-1 is a metallurgically bonded, hermetically sealed axial-leaded Zener diode optimized for stable voltage reference under wide temperature and current variation. Its 43.0 V nominal Zener voltage is specified at 250 mA test current with 250 Ω dynamic impedance, enabling low-output-drift regulation in feedback loops.
Designed for military-grade reliability, it meets MIL-PRF-19500/435 across JAN, JANTX, JANTXV, and JANS levels. Its 1 µV/√Hz noise density at IZT and minimal capacitance support low-noise analog sensing and precision instrumentation applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 43.0 V at 250 mA - defines stable regulation point for feedback networks |
| Power Dissipation | 500 mW at 25 °C - sets maximum continuous power handling before derating |
| Dynamic Impedance ZZT | 250 Ω at 250 mA - determines output voltage stability under load transients |
| Reverse Leakage IR | 0.01 µA @ 32.7 V - ensures minimal error current in high-impedance reference paths |
| Noise Density | 1 µV/√Hz - enables use in low-noise analog signal conditioning and metrology |
| Temp Coefficient αVZ | +0.095 %/°C - quantifies voltage drift over –65 to +175 °C operating range |
| Junction-to-Lead RθJL | 250 °C/W - informs thermal design when mounted with 3/8″ lead length |
Pinout & Package
DO-35 (DO-204AH) axial-leaded glass package with cathode indicated by band; banded end is positive during Zener operation. Hermetically sealed, tin-lead or RoHS-compliant matte-tin plating, ~0.2 g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference ground node | Connected to system ground or common return in shunt regulator topology |
| Cathode | Zener regulation node | Banded terminal; connects to unregulated input rail to clamp output at 43.0 V |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bond construction | Ensures long-term parameter stability and resistance to thermal cycling fatigue |
| JANS-level qualification | Validates performance for spaceflight and nuclear-hardened systems per MIL-PRF-19500/435 |
| 1 µV/√Hz noise density | Supports sub-millivolt reference accuracy in precision ADC biasing and sensor excitation |
| –65 to +175 °C operating range | Enables deployment in engine control units, downhole tools, and satellite power converters |
| Hermetic glass sealing | Prevents moisture ingress and parametric shift in humid or corrosive environments |
Applications
| Aerospace Power Regulation | High-Temperature Industrial Sensors |
|---|---|
Use Scenario: Regulating auxiliary 43 V bus in satellite power distribution units where voltage stability must hold across orbital thermal cycles. IC Role / Device Role / Timing Role: Shunt Zener reference providing precise clamping against input transients and load variations. Use Value: JANS qualification and 250 °C/W junction-to-lead thermal resistance ensure reliable operation without active cooling. | Use Scenario: Providing stable bias voltage for piezoresistive pressure sensors in turbine exhaust monitoring at 150 °C ambient. IC Role / Device Role / Timing Role: Precision voltage reference in Wheatstone bridge excitation circuit. Use Value: +0.095 %/°C tempco and 1 µV/√Hz noise enable <±0.5% full-scale accuracy over full temperature range. |
| Nuclear Instrumentation | Military Radio RF Stage Biasing |
Use Scenario: Reference element in radiation-hardened dosimetry front-end amplifiers exposed to >100 krad(Si) total ionizing dose. IC Role / Device Role / Timing Role: Radiation-tolerant Zener voltage source maintaining calibration integrity post-irradiation. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating in gamma-field environments. | Use Scenario: Setting gate bias point for GaN RF power amplifiers in S-band tactical radios operating from –40 to +85 °C. IC Role / Device Role / Timing Role: Stable DC reference for Class AB amplifier quiescent current control. Use Value: Low 0.01 µA reverse leakage prevents bias drift and maintains linearity under wide temperature swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4124UR-1 | Same electrical specs, DO-213AA surface-mount package instead of DO-35 axial | Requires PCB rework for SMT assembly; no through-hole compatibility | Select for automated production where board space and thermal mass constraints favor SMT |
| 1N4124-1e3 | Identical DO-35 package and Zener parameters, but RoHS-compliant matte-tin plating (commercial grade only) | Not qualified to JANTXV/JANS; limited to non-military commercial programs | Select when environmental compliance outweighs extended reliability qualification requirements |
Compared with 1N4124UR-1 and 1N4124-1e3, the 1N4124-1 uniquely combines JANS-level qualification, axial-leaded DO-35 form factor, and hermetic glass construction - making it the sole choice for legacy-replacement and radiation-tolerant through-hole designs requiring full MIL-spec traceability.
Availability
1N4124-1 is available at Aetrix Electronics and suitable for aerospace power regulation, high-temperature industrial sensors, and nuclear instrumentation requiring stable component supply with full MIL-PRF-19500/435 traceability.
Supply support for 1N4124-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.
The 1N4124-1 belongs to Microsemi's legacy MIL-qualified Zener diode family designed specifically for mission-critical voltage reference applications in aerospace, defense, and nuclear systems where parameter stability and long-term reliability are non-negotiable.
FAQ
What is the Zener voltage tolerance for 1N4124-1?
The 1N4124-1 has a nominal Zener voltage of 43.0 V with a standard tolerance of ±5%, as defined in the JEDEC-registered specification and confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0245-2 Rev. 1. This tolerance applies at 25 °C with 250 mA test current and is consistent across JAN, JANTX, JANTXV, and JANS reliability levels.
Is 1N4124-1 qualified to JANS level?
Yes, the 1N4124-1 is qualified to JANS level per MIL-PRF-19500/435, as explicitly stated in the DESCRIPTION section on page 1 of the official Microsemi datasheet T4-LDS-0245-2. This qualification covers full environmental testing including temperature cycling, hermeticity, and radiation hardness verification required for spaceflight applications.
What is the maximum reverse leakage current for 1N4124-1?
The maximum reverse leakage current (IR) for 1N4124-1 is 0.01 µA measured at 32.7 V (75% of VZ), per the Electrical Characteristics table on page 3 of T4-LDS-0245-2 Rev. 1. This ultra-low leakage supports high-impedance reference circuits where bias current errors must be minimized.
Does 1N4124-1 have radiation hardness certification?
Yes, the 1N4124-1 exhibits inherent radiation hardness as documented in Microsemi MicroNote 050, referenced in the APPLICATIONS / BENEFITS section on page 1 of T4-LDS-0245-2 Rev. 1. Its metallurgically bonded glass construction provides tolerance to total ionizing dose (TID) without requiring additional hardening measures.
What is the thermal resistance junction-to-lead for 1N4124-1?
The thermal resistance junction-to-lead (RθJL) for 1N4124-1 is 250 °C/W when measured with 3/8″ (10 mm) lead length from body, as specified in the MAXIMUM RATINGS table on page 1 of T4-LDS-0245-2 Rev. 1. This value guides heatsinking decisions for sustained 500 mW operation in high-ambient environments.
1N4124-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 43 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- 250 Ohms
- Current - Reverse Leakage @ Vr:
- 10 nA @ 32.7 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
1N4124-1 FAQ
1.How can I place an order for 1N4124-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4124-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4124-1 reliable?
The price and inventory of 1N4124-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4124-1 is usually 5 days.
3.What payment methods are accepted for 1N4124-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4124-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4124-1?
1N4124-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4124-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4124-1?
For technical support, including 1N4124-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4124-1 requirements.
6.How does Aetrix verify that 1N4124-1 is sourced from the original manufacturer or authorized distributors?
All 1N4124-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4124-1 meets industry standards.
7.What is the process for return or replacement of 1N4124-1?
All 1N4124-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4124-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4124-1 part is unused and in its original packaging.
Return procedure for 1N4124-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4124-1 Tags
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