Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1N4454-TAP

Part No.:
1N4454-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N4454-TAP.pdf
Description:
DIODE GEN PURP 75V 150MA DO35
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,362

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N4454-TAP from Vishay Semiconductors is a silicon epitaxial planar fast-switching small-signal diode rated for 100 V peak reverse voltage, 150 mA average forward current, and 4 ns reverse recovery time, used in high-frequency rectification and signal demodulation circuits.

For engineers reviewing the 1N4454-TAP datasheet, 1N4454-TAP pinout, 1N4454-TAP application, or 1N4454-TAP equivalent, key selection criteria include reverse recovery time, leakage current at 75 V, junction temperature limit, and DO-35 glass package compatibility with automated placement systems.

Technical Context

The 1N4454-TAP operates as a unidirectional PN junction rectifier with low junction capacitance (≤2 pF) and fast carrier recombination enabling operation up to 100 MHz. Its 4 ns trr and 100 nA IR at 50 V support high-speed switching in RF detector and clamp circuits.

Thermal design relies on its 350 °C/W junction-to-ambient thermal resistance and 175 °C maximum junction temperature, with power derating required above 25 °C ambient per the admissible dissipation curve. The DO-35 glass case provides hermetic sealing and stable parameter performance across –65 to +175 °C storage range.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Reverse Voltage (VRM)100 V - supports rectification in low-voltage AC/DC converters and signal clamping up to 100 V transient peaks
Reverse Recovery Time (trr)4 ns - enables use in >10 MHz switching applications including RF envelope detection and pulse shaping
Junction Capacitance (Ctot)2 pF at 0 V - minimizes signal loading in high-frequency coupling and tuning circuits
Leakage Current (IR)5 µA at 75 V - ensures low standby loss in battery-powered signal paths and precision bias networks
Max Junction Temperature (TJ)175 °C - allows reliable operation in thermally constrained PCB layouts without forced cooling
Forward Voltage (VF)1.0 V at 10 mA - defines conduction loss in low-current logic-level signal routing and level-shifting diodes

Pinout & Package

Package: DO-35 glass axial package (IEC 60127-2 / JEDEC DO-204AH), 2.0 mm diameter × 4.5 mm length, weight ≈ 0.13 g, lead spacing 2.54 mm, compatible with standard axial tape-and-reel feeders (52 mm tape width).

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Forward current entry terminalConnected to lower-potential side of circuit; must be biased ≥0.7 V above cathode to conduct
Cathode (K)Forward current exit terminalMarked by band on glass body; connects to higher-potential node in reverse-biased blocking configuration

Key Features

FeatureDesign Value
Silicon epitaxial planar constructionEnables tight parameter distribution and reproducible trr ≤4 ns across production lots
Low junction capacitance2 pF at zero bias supports minimal phase distortion in 100 MHz RF detector front-ends
Fast reverse recovery4 ns trr allows clean switching in pulse-width modulated timing references and sample-hold circuits
Hermetic DO-35 glass packageProvides moisture resistance and long-term parameter stability in industrial control environments

Applications

RF Signal DetectionHigh-Speed Logic Clamping

Use Scenario: Demodulating AM radio signals in portable receivers using envelope detection.

IC Role / Device Role / Timing Role: Signal rectifier converting RF carrier amplitude into baseband audio envelope.

Use Value: 4 ns trr and 2 pF Ctot preserve modulation fidelity up to 100 MHz without harmonic distortion.

Use Scenario: Preventing TTL/CMOS input overvoltage during hot-plug events in embedded I/O interfaces.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting transient excursions to <1.0 V above rail.

Use Value: 5 µA IR at 75 V ensures negligible standby current draw while maintaining sub-10 ns response to ESD pulses.

Low-Power DC-DC FeedbackPrecision Reference Biasing

Use Scenario: Providing isolated feedback path in flyback converter optocoupler circuits.

IC Role / Device Role / Timing Role: High-voltage isolation diode conducting error signal current from secondary to primary side.

Use Value: 100 V VRM rating supports safe operation across 60–90 V output rails with margin for reflected transients.

Use Scenario: Establishing stable bias points for op-amp input stages in medical sensor front-ends.

IC Role / Device Role / Timing Role: Low-leakage voltage reference element setting precise DC operating points.

Use Value: 100 nA IR at 50 V prevents drift in high-impedance bias networks requiring <1 ppm accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching small-signal diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4148WS-7-FSmaller SOD-323 package (1.7 × 1.3 mm), 4 ns trr, 100 V VRM, but 150 mA IF(AV) derated to 100 mA at TA > 75 °CSurface-mount only; unsuitable for through-hole prototyping or axial wave-solder processesSelect when board space is constrained and reflow assembly is used
BAS16,215DO-35 package, 4 ns trr, 80 V VRM (lower than 1N4454-TAP's 100 V), 200 mA IF(AV), 10 nA IR at 50 VLower reverse voltage margin limits use in 75–100 V transient suppressionSelect when tighter leakage spec (<10 nA) is prioritized over peak voltage capability

Compared with 1N4454-TAP, 1N4148WS-7-F offers footprint reduction at the cost of thermal derating, while BAS16,215 trades 20 V reverse margin for lower leakage-making 1N4454-TAP optimal for 100 V-rated RF and power-supply feedback where both speed and voltage headroom are critical.

Availability

1N4454-TAP is available at Aetrix Electronics and suitable for RF signal detection, high-speed logic clamping, and low-power DC-DC feedback applications requiring stable component supply and long-lifecycle availability.

Supply support for 1N4454-TAP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability diodes, MOSFETs, and resistors for industrial and automotive markets.

The 1N4454-TAP belongs to Vishay's legacy General Semiconductor fast-switching diode family, designed specifically for high-frequency rectification and signal integrity preservation in compact analog and mixed-signal systems.

FAQ

What is the maximum reverse voltage rating for the 1N4454-TAP?

The 1N4454-TAP has a peak reverse voltage (VRM) rating of 100 V and a maximum DC reverse voltage (VR) of 75 V. This dual rating means it can withstand repetitive 100 V transient spikes but is rated for continuous 75 V reverse bias. Engineers must ensure system-level transients do not exceed 100 V and steady-state reverse bias remains ≤75 V to maintain reliability. The 1N4454-TAP datasheet specifies these limits under standard test conditions at 25 °C ambient.

Does the 1N4454-TAP have a specified reverse recovery time?

Yes, the 1N4454-TAP has a guaranteed maximum reverse recovery time (trr) of 4 ns, measured at IF = 10 mA, IR = 1 mA, VR = 6 V, and RL = 100 Ω. This value is confirmed in Vishay's Document Number 88110 and is critical for high-frequency applications such as RF detection and pulse shaping. The 1N4454-TAP achieves this performance via silicon epitaxial planar construction and optimized doping profiles.

What package type is used for the 1N4454-TAP?

The 1N4454-TAP uses the DO-35 (also designated DO-204AH) glass axial package, with approximate dimensions of 2.0 mm diameter × 4.5 mm length and 2.54 mm lead spacing. It weighs about 0.13 g and is supplied in 52 mm-wide ammo tape (F2) or 13-inch reels (F3). The 1N4454-TAP's hermetic glass construction ensures long-term parameter stability in humid or chemically aggressive environments.

What is the forward voltage drop of the 1N4454-TAP at 10 mA?

The 1N4454-TAP exhibits a maximum forward voltage drop (VF) of 1.0 V at 10 mA forward current and 25 °C ambient temperature. This specification appears in the Electrical Characteristics table of Vishay's official datasheet (Document Number 88110). The 1N4454-TAP's VF is typical for fast silicon switching diodes and directly impacts conduction loss in low-current signal routing and bias networks.

How does the 1N4454-TAP perform at elevated temperatures?

The 1N4454-TAP maintains operation up to a maximum junction temperature (TJ) of 175 °C and a storage temperature range of –65 to +175 °C. Its leakage current increases with temperature-e.g., rising to ~1 µA at 20 V and 100 °C-but remains within specification. Thermal resistance junction-to-ambient (RθJA) is 350 °C/W, requiring derating above 25 °C ambient per the published power dissipation curve. The 1N4454-TAP's thermal behavior is fully characterized in Vishay's Document Number 88110.

1N4454-TAP Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Tape & Box (TB)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
150mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 10 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
5 µA @ 75 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)
Operating Temperature - Junction:
-65°C ~ 175°C

1N4454-TAP FAQ

1.How can I place an order for 1N4454-TAP through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N4454-TAP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N4454-TAP reliable?

The price and inventory of 1N4454-TAP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4454-TAP is usually 5 days.

3.What payment methods are accepted for 1N4454-TAP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4454-TAP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N4454-TAP?

1N4454-TAP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N4454-TAP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N4454-TAP?

For technical support, including 1N4454-TAP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4454-TAP requirements.

6.How does Aetrix verify that 1N4454-TAP is sourced from the original manufacturer or authorized distributors?

All 1N4454-TAP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4454-TAP meets industry standards.

7.What is the process for return or replacement of 1N4454-TAP?

All 1N4454-TAP units undergo pre-shipment inspection (PSI). If there is an issue with 1N4454-TAP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N4454-TAP part is unused and in its original packaging.

Return procedure for 1N4454-TAP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N4454-TAP Tags

  • 1N4454-TAP
  • 1N4454-TAP PDF
  • 1N4454-TAP Datasheet
  • 1N4454-TAP Specifications
  • 1N4454-TAP Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1N4454-TAP
  • Buy 1N4454-TAP
  • 1N4454-TAP Price
  • 1N4454-TAP Distributor
  • 1N4454-TAP Supplier
  • 1N4454-TAP Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER