Microchip Technology 1N4483US/TR
- Part No.:
- 1N4483US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N4483US/TR.pdf
- Description:
- DIODE ZENER 56V 1.5W D5A
- Quantity:
- Payment:

- Shipping:

Inventory:94
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Product details
Overview
1N4483US/TR from Microsemi is a hermetically sealed, voidless glass MELF (D-5A) surface-mount Zener diode rated for 1.5 W steady-state power dissipation, with a nominal Zener voltage of 56.0 V at 4.5 mA test current, ±5% tolerance, and maximum dynamic impedance of 70 Ω at IZT. It operates across –65 °C to +175 °C junction temperature and is qualified to MIL-PRF-19500/406 at JANTXV level for high-reliability voltage regulation in aerospace power conditioning circuits.
For engineers reviewing the 1N4483US/TR datasheet, 1N4483US/TR pinout, 1N4483US/TR application, or 1N4483US/TR equivalent, this page delivers verified electrical parameters, military-grade qualification status, thermal resistance (20 °C/W), reverse leakage (<0.25 µA at 44.8 V), and surge current rating (0.26 A @ 8.3 ms) - all critical for radiation-hardened, mission-critical analog reference design.
Technical Context
This device belongs to Microsemi's military-qualified 1N4460US–1N4496US series, featuring internal Category I metallurgical bonds and triple-layer passivation for enhanced reliability. Its Zener breakdown mechanism delivers stable regulation over wide current (4.5 mA to 0.26 A surge) and temperature (–65 °C to +175 °C) ranges.
The D-5A MELF package enables high thermal conductivity via tungsten slugs and end-cap mounting, achieving 20 °C/W junction-to-end-cap thermal resistance. It is RoHS-compliant only in commercial grade; the 1N4483US/TR variant is non-RoHS, Sn/Pb terminated, and marked with cathode band polarity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 56.0 V at IZT = 4.5 mA - precise reference voltage for analog feedback loops |
| Power Dissipation (PD) | 1.5 W @ TA = 25 °C - supports continuous regulation in compact, conduction-cooled layouts |
| Dynamic Impedance (ZZT) | 70 Ω @ IZT - low AC impedance ensures minimal output voltage variation under load transients |
| Reverse Leakage (IR) | <0.25 µA @ VR = 44.8 V - negligible error contribution in high-impedance bias networks |
| Thermal Resistance (RθJEC) | 20 °C/W - enables predictable derating up to 175 °C junction temperature with end-cap heatsinking |
| Surge Current (IZSM) | 0.26 A @ 8.3 ms square wave - withstands transient overvoltage events without degradation |
| Junction Temperature Range | –65 °C to +175 °C - certified for operation in extreme environmental conditions per MIL-PRF-19500/406 |
Pinout & Package
Package: D-5A MELF (Voidless hermetic glass, tungsten slug construction, cathode indicated by band). Weight: 193 mg. Marking: Polarity band only. Termination: Sn/Pb (non-RoHS).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node in reverse-biased Zener configuration; carries full regulator current during breakdown |
| Cathode | Zener breakdown terminal | Marked with band; connected to higher-potential node; defines regulated output voltage referenced to anode |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category I metallurgical bond | Ensures mechanical robustness and thermal cycle reliability for >1000 cycles between –65 °C and +175 °C |
| Triple-layer passivation | Suppresses surface leakage and enhances stability under ionizing radiation (per MicroNote 050) |
| MIL-PRF-19500/406 JANTXV qualification | Validated screening including burn-in, temperature cycling, and lot acceptance testing for flight-critical use |
| Non-ESD-sensitive construction | Withstands >4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
Applications
| Aerospace Power Conditioning | Defense Avionics Reference |
|---|---|
Use Scenario: Regulating reference voltage for ADCs and DACs in satellite power management units exposed to thermal cycling and radiation. IC Role / Device Role / Timing Role: Precision Zener voltage reference providing stable 56 V bias for op-amp gain-setting networks. Use Value: Maintains <0.25 µA leakage at 44.8 V and ±5% tolerance ensures <±0.5% total reference error over –55 °C to +125 °C operating range. |
Use Scenario: Overvoltage clamp in radar transmitter bias supplies where transient suppression must survive repeated 8.3 ms surges. IC Role / Device Role / Timing Role: Surge-protected Zener shunt regulator absorbing energy spikes without parameter shift. Use Value: 0.26 A surge rating at 8.3 ms and 20 °C/W RθJEC enable reliable clamping without thermal runaway in pulsed RF systems. |
| Industrial Control Loop Reference | High-Reliability Test Equipment |
Use Scenario: Providing stable excitation voltage for strain gauge bridges in oil & gas downhole sensors operating at 175 °C ambient. IC Role / Device Role / Timing Role: High-temperature Zener reference maintaining regulation across full MIL-spec junction range. Use Value: Validated operation to +175 °C with <70 Ω ZZT ensures bridge excitation stability within ±0.1% over full temperature span. |
Use Scenario: Calibration reference in automated test equipment requiring traceable, drift-free voltage standards. IC Role / Device Role / Timing Role: Primary Zener reference in metrology-grade voltage dividers with hermetic stability. Use Value: Voidless glass construction and Category I bond eliminate aging-induced VZ drift, supporting <1000-hour calibration intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4483US | Same electrical specs and package; differs only in tape-and-reel packaging (TR suffix denotes reel delivery) | No functional difference; identical use in SMT assembly lines | Select 1N4483US/TR when automated pick-and-place requires EIA-481-B compliant tape format |
| 1N4483 | Same Zener voltage, power, and tolerance; axial DO-41 package instead of MELF D-5A; no military qualification | Lacks MIL-PRF-19500/406 screening and hermetic sealing; unsuitable for space or defense use | Choose 1N4483 only for commercial-grade, non-mission-critical prototyping where board space and reliability are less constrained |
Compared with 1N4483US/TR, the bare 1N4483 lacks hermeticity, military screening, and thermal performance (RθJA ~65 °C/W vs. 20 °C/W), while the non-TR variant offers identical performance but requires manual handling - making 1N4483US/TR optimal for high-volume, high-reliability SMT production.
Availability
1N4483US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, defense avionics reference, and industrial control loop reference requiring stable component supply under extended temperature and radiation exposure.
Supply support for 1N4483US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec components.
The 1N4460US–1N4496US series was developed specifically for military and space applications requiring hermetic Zener regulation with guaranteed lifetime stability, thermal resilience, and ESD immunity - not general-purpose voltage reference use.
FAQ
What is the Zener voltage tolerance for 1N4483US/TR?
The 1N4483US/TR has a nominal Zener voltage of 56.0 V with a standard tolerance of ±5%, as specified in the Electrical Characteristics table on page 3 of T4-LDS-0183-1 Rev. 1. No suffix indicates 5% tolerance; tighter tolerances (±2% or ±1%) require C or D suffixes, which do not apply to the 1N4483US/TR variant.
Is 1N4483US/TR RoHS compliant?
No, the 1N4483US/TR is not RoHS compliant. Per the nomenclature table on page 2, RoHS compliance (e3 marking) is available only for commercial-grade versions; the 1N4483US/TR uses Sn/Pb termination and carries no e3 designation, confirming non-RoHS status per Microsemi documentation.
What is the maximum reverse leakage current for 1N4483US/TR at 44.8 V?
The maximum reverse leakage current for 1N4483US/TR is 0.25 µA at VR = 44.8 V (80% of VZ), as listed in the "MAXIMUM REVERSE CURRENT IR @ VR" column for 1N4483US on page 3 of the datasheet. This value is measured at 25 °C case temperature.
Does 1N4483US/TR have MIL-PRF-19500/406 qualification?
Yes, the 1N4483US/TR is qualified per MIL-PRF-19500/406 at JANTXV level, as confirmed in the "Qualified Levels" section on page 1 and the "PART NOMENCLATURE" table on page 2. The "US" suffix denotes surface-mount MELF construction meeting that specification.
What is the thermal resistance junction-to-end-cap for 1N4483US/TR?
The thermal resistance junction-to-end-cap (RθJEC) for 1N4483US/TR is 20 °C/W, as stated in the "MAXIMUM RATINGS" table on page 1. This value applies to steady-state conduction and enables accurate thermal derating using the curve in Figure 2.
1N4483US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 56 V
- Tolerance:
- ±5%
- Power - Max:
- 1.5 W
- Impedance (Max) (Zzt):
- 70 Ohms
- Current - Reverse Leakage @ Vr:
- 250 nA @ 44.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
1N4483US/TR FAQ
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Please submit a Request for Quotation (RFQ) for 1N4483US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that 1N4483US/TR is sourced from the original manufacturer or authorized distributors?
All 1N4483US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4483US/TR meets industry standards.
7.What is the process for return or replacement of 1N4483US/TR?
All 1N4483US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4483US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4483US/TR part is unused and in its original packaging.
Return procedure for 1N4483US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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