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Microchip Technology 1N4493US/TR
- Part No.:
- 1N4493US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N4493US/TR.pdf
- Description:
- DIODE ZENER 150V 1.5W D5A
- Quantity:
- Payment:
- Shipping:
Inventory:100
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Product details
Overview
1N4493US/TR from Microsemi is a hermetically sealed, voidless glass MELF surface-mount Zener diode rated for 1.5 W steady-state power dissipation, with a nominal Zener voltage of 150 V at 1.7 mA test current, 700 Ω dynamic impedance at IZT, and maximum reverse leakage of 0.25 µA at 120 V. It is qualified to MIL-PRF-19500/406 (JANTXV level) and used in high-reliability voltage regulation within aerospace power conditioning circuits.
For engineers reviewing the 1N4493US/TR datasheet, 1N4493US/TR pinout, 1N4493US/TR application, or 1N4493US/TR equivalent, this page delivers verified military-grade Zener specifications, thermal derating behavior, junction-to-end-cap thermal resistance, RoHS-compliant marking options, and direct alternatives for radiation-hardened analog reference design.
Technical Context
This device operates as a precision voltage reference in reverse-biased breakdown mode, delivering stable 150 V regulation across –65 °C to +175 °C junction temperature range with ±5% tolerance (no suffix). Its voidless glass/MELF construction enables robust thermal cycling performance and immunity to moisture ingress.
The 1N4493US/TR uses internal Category I metallurgical bonds per MIL-PRF-19500/406, exhibits 0.25 µA max reverse leakage at VR = 120 V, and supports surge current up to 0.095 A (8.3 ms square wave), making it suitable for transient-suppressed bias networks in avionics DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage (VZ) | 150 V at IZT = 1.7 mA - defines primary regulation point under standard test conditions |
| Power Dissipation (PD) | 1.5 W @ TA = 25 °C - sets maximum continuous DC power handling before thermal derating |
| Dynamic Impedance (ZZT) | 700 Ω @ IZT - determines output voltage variation under load current changes |
| Junction Temperature Range | –65 °C to +175 °C - enables operation in extreme environmental conditions without parameter shift |
| Reverse Leakage Current (IR) | 0.25 µA @ VR = 120 V - ensures minimal parasitic current in high-impedance reference paths |
| Thermal Resistance (RθJEC) | 20 °C/W - quantifies heat transfer efficiency from junction to end cap for thermal design |
| Maximum Zener Surge Current | 0.095 A @ 8.3 ms - defines single-pulse transient energy handling capability |
Pinout & Package
Package: A (D-5A) MELF - hermetically sealed voidless glass case with tungsten slugs; cathode indicated by polarity band; terminals plated with Sn/Pb or RoHS-compliant matte tin over copper; weight 193 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection in reverse-bias regulator configuration | Connected to system ground or lower potential node when used as shunt regulator |
| Cathode | Reverse breakdown terminal / high-side connection | Connected to regulated voltage rail; marked with visible band for orientation |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture-induced parametric drift and long-term degradation in humid or vacuum environments |
| Category I metallurgical bond | Ensures mechanical integrity and thermal stability per MIL-PRF-19500/406 JANTXV qualification |
| Triple-layer passivation | Reduces surface leakage and enhances reliability under high-humidity or ionizing radiation exposure |
| Non-sensitive to ESD | Withstands >4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) up to 100 krad(Si) |
Applications
| Aerospace Power Conditioning | Avionics Reference Supply |
|---|---|
Use Scenario: Regulating auxiliary 150 V bias rails in satellite power management units exposed to thermal cycling and radiation. IC Role / Device Role / Timing Role: Shunt Zener regulator providing stable reference for isolated DC-DC feedback loops. Use Value: Maintains ±5% regulation across –65 °C to +175 °C with <0.25 µA leakage, minimizing drift in critical telemetry circuitry. |
Use Scenario: Establishing precision voltage references in flight control computer analog input stages. IC Role / Device Role / Timing Role: High-stability Zener element in ratiometric sensor excitation networks. Use Value: Delivers radiation-hardened performance with 700 Ω dynamic impedance, reducing sensitivity to supply ripple in safety-critical subsystems. |
| Military Radar Bias Networks | High-Voltage Test Equipment |
Use Scenario: Stabilizing gate drive voltages for GaN-based RF amplifiers in ground-based radar transmitters. IC Role / Device Role / Timing Role: Overvoltage clamp and reference source in pulsed high-voltage bias chains. Use Value: Withstands 0.095 A surge current (8.3 ms) and maintains regulation during rapid thermal transients common in radar duty cycles. |
Use Scenario: Calibrating high-voltage probes and insulation testers requiring traceable 150 V reference standards. IC Role / Device Role / Timing Role: Primary Zener reference in metrology-grade calibration modules. Use Value: Hermetic glass construction ensures long-term calibration stability with no void-induced aging effects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4493US (non-TR) | Same electrical specs and package; differs only in packaging format (bulk vs. tape-and-reel) | No functional difference; TR version supports automated SMT placement | Select 1N4493US/TR for high-volume production with pick-and-place assembly |
| 1N4493 | Identical Zener voltage and power rating but in DO-41 axial-leaded package; lacks MIL-PRF-19500/406 qualification | Suitable for commercial-grade prototyping or non-military repair; not rated for radiation or extended temperature | Choose 1N4493 only for cost-sensitive, non-qualified bench use where hermeticity and qualification are not required |
Compared with 1N4493US/TR, the bulk 1N4493US offers identical performance but no tape-and-reel support, while the DO-41 1N4493 sacrifices military qualification and hermetic reliability for lower cost and through-hole compatibility.
Availability
1N4493US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, avionics reference supply, and military radar bias networks requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N4493US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial applications, emphasizing radiation tolerance and extended temperature operation.
The 1N4493US/TR belongs to Microsemi's military-qualified Zener diode family built for high-reliability voltage regulation in mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance for 1N4493US/TR?
The 1N4493US/TR has a nominal Zener voltage of 150 V with a standard tolerance of ±5%, as indicated by the absence of a tolerance suffix in the part number. Tighter tolerances (±2% or ±1%) require different suffixes (C or D) and are not applicable to the 1N4493US/TR variant.
Is 1N4493US/TR RoHS compliant?
Yes, the 1N4493US/TR is available in RoHS-compliant versions with matte tin plating over copper, designated by the "e3" suffix in the full nomenclature. Commercial-grade units support RoHS compliance; military-qualified versions (e.g., JANTXV) retain Sn/Pb terminations unless otherwise specified.
What is the maximum operating temperature for 1N4493US/TR?
The 1N4493US/TR supports a junction and storage temperature range of –65 °C to +175 °C, validated per MIL-PRF-19500/406. This allows deployment in extreme environments such as satellite payload bays or jet engine-mounted electronics.
Does 1N4493US/TR have radiation hardness certification?
Yes, the 1N4493US/TR exhibits inherent radiation hardness documented in Microsemi MicroNote 050, supporting total ionizing dose (TID) tolerance up to 100 krad(Si) without functional degradation-critical for space and nuclear instrumentation applications.
How does the thermal resistance of 1N4493US/TR affect PCB layout?
The 1N4493US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 20 °C/W. To maintain safe junction temperatures, PCB pads must provide adequate copper area and thermal vias to dissipate heat into internal planes or heatsinks-especially above 25 °C ambient.
1N4493US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 150 V
- Tolerance:
- ±5%
- Power - Max:
- 1.5 W
- Impedance (Max) (Zzt):
- 700 Ohms
- Current - Reverse Leakage @ Vr:
- 250 nA @ 120 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
1N4493US/TR FAQ
1.How can I place an order for 1N4493US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4493US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4493US/TR reliable?
The price and inventory of 1N4493US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4493US/TR is usually 5 days.
3.What payment methods are accepted for 1N4493US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4493US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4493US/TR?
1N4493US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4493US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4493US/TR?
For technical support, including 1N4493US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4493US/TR requirements.
6.How does Aetrix verify that 1N4493US/TR is sourced from the original manufacturer or authorized distributors?
All 1N4493US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4493US/TR meets industry standards.
7.What is the process for return or replacement of 1N4493US/TR?
All 1N4493US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4493US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4493US/TR part is unused and in its original packaging.
Return procedure for 1N4493US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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