Microchip Technology 1N4698UR-1E3/TR
- Part No.:
- 1N4698UR-1E3/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N4698UR-1E3/TR.pdf
- Description:
- DIODE ZENER 11V 500MW DO213AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,406
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Product details
Overview
1N4698UR-1E3/TR from Microsemi is a 500 mW surface-mount Zener diode in DO-213AA (SOD-80/MLL34) MELF package, rated for 11.0 V nominal Zener voltage at 50 µA test current, ±5% tolerance, with 0.11 V regulation change between 10 µA and 100 µA and 0.05 µA max reverse leakage at 8.4 V. It delivers stable voltage reference in precision analog power rails and low-power sensor biasing circuits.
For engineers reviewing the 1N4698UR-1E3/TR datasheet, 1N4698UR-1E3/TR pinout, 1N4698UR-1E3/TR application, or 1N4698UR-1E3/TR equivalent, key selection factors include its hermetically sealed glass construction, metallurgically bonded die for high reliability, minimal capacitance (<1.5 pF typical), radiation-hardened design per MicroNote 050, and RoHS-compliant matte-tin plating.
Technical Context
This device operates as a two-terminal voltage regulator in reverse-bias breakdown mode, with Zener voltage defined at IZT = 50 µA and specified regulation delta (∆VZ = 0.11 V) measured between 10 µA and 100 µA. Its thermal resistance junction-to-end cap is 100 °C/W on FR4 board, enabling stable operation up to +175 °C junction temperature.
The DO-213AA package features end-cap terminations with cathode band marking, tin-lead or RoHS matte-tin plating, and solderability compliant with MIL-STD-750 Method 2026. It is non-ESD-sensitive per MIL-STD-750 Method 1020 and inherently radiation-hardened.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.0 V at 50 µA - defines precise regulation point for low-current reference applications |
| Power Dissipation (PD) | 0.5 W - supports stable operation in compact surface-mount layouts without forced cooling |
| Regulation Delta (∆VZ) | 0.11 V (10–100 µA) - indicates tight voltage stability across operating current range |
| Reverse Leakage (IR) | 0.05 µA at 8.4 V - ensures minimal error current in high-impedance bias networks |
| Max Zener Current (IZM) | 43.2 mA - sets absolute upper limit for continuous DC current under derated conditions |
| Junction Temp Range | –65 °C to +175 °C - enables deployment in extended industrial and aerospace environments |
| Capacitance | <1.5 pF at 0 V - preserves high-frequency signal integrity in RF and timing circuits |
Pinout & Package
DO-213AA (SOD-80 / MLL34) hermetically sealed glass MELF package with axial end-cap terminals. Cathode identified by single black band; banded end is positive during Zener regulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Reference ground node | Connected to circuit common; forms return path for Zener current |
| Cathode (banded end) | Regulated output node | Provides stable 11.0 V relative to anode when reverse-biased above breakdown |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Prevents moisture ingress and long-term parameter drift in harsh environments |
| Metallurgical die bonding | Eliminates wire bonds to improve thermal cycling reliability and power handling |
| Radiation hardness | Validated per Microsemi MicroNote 050 for TID tolerance in space-grade applications |
| Low capacitance | <1.5 pF enables use in high-speed clamping and RF detector circuits |
| Non-ESD-sensitive | Withstands handling without special precautions per MIL-STD-750 Method 1020 |
Applications
| Industrial Sensor Biasing | Precision Reference Supply |
|---|---|
Use Scenario: Providing stable excitation voltage to resistive bridge sensors in factory automation systems. IC Role / Device Role / Timing Role: Two-terminal shunt voltage reference regulating supply rail at 11.0 V. Use Value: Low 0.05 µA leakage minimizes offset error in microamp-level bridge currents. | Use Scenario: Generating accurate 11.0 V reference for 12-bit ADCs in data acquisition modules. IC Role / Device Role / Timing Role: Primary Zener reference source feeding op-amp buffer stage. Use Value: 0.11 V regulation delta ensures <0.1% linearity error over 10–100 µA load variation. |
| Aerospace Power Monitoring | Low-Power IoT Node Regulation |
Use Scenario: Voltage clamping and rail stabilization in satellite power telemetry circuits. IC Role / Device Role / Timing Role: Radiation-hardened shunt regulator protecting monitoring IC inputs. Use Value: Inherent TID hardness per MicroNote 050 eliminates need for shielding or redundancy. | Use Scenario: Regulating 3.3 V LDO input from 12 V battery in wireless sensor nodes. IC Role / Device Role / Timing Role: Pre-regulator reducing dropout stress on downstream LDO. Use Value: 0.5 W rating allows intermittent 43 mA surge current without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C11 (ON Semiconductor) | DO-35 through-hole package; 500 mW; ±5% tolerance; 10 µA test current | Requires PCB through-hole mounting; higher thermal resistance (350 °C/W) | Select when legacy through-hole assembly is required and board space permits larger footprint |
| MMSZ5240B (Diodes Inc.) | SOD-123 surface-mount; 500 mW; ±5% tolerance; 20 mA test current; 0.2 V ∆VZ | Higher test current shifts regulation point; less stable at microamp bias levels | Select for cost-sensitive consumer designs where ultra-low leakage and radiation hardness are not required |
Compared with BZX55C11 and MMSZ5240B, the 1N4698UR-1E3/TR offers superior low-current regulation stability (50 µA IZT, 0.11 V ∆VZ), hermetic sealing, and radiation tolerance-critical for aerospace, medical, and high-reliability industrial use cases where long-term parametric drift must be minimized.
Availability
1N4698UR-1E3/TR is available at Aetrix Electronics and suitable for industrial sensor biasing, precision reference supplies, aerospace power monitoring, and low-power IoT node regulation requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N4698UR-1E3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N4698UR-1E3/TR belongs to Microsemi's UR-series Zener diodes, designed specifically for mission-critical applications demanding hermetic sealing, metallurgical bonding, and verified radiation tolerance per MicroNote 050.
FAQ
What is the Zener voltage tolerance for 1N4698UR-1E3/TR?
The 1N4698UR-1E3/TR has a nominal Zener voltage of 11.0 V with a standard tolerance of ±5%, as confirmed in the Electrical Characteristics table on page 3 of T4-LDS-0240-1 Rev. 2. Tighter 2% and 1% tolerances are available under different part number suffixes (C and D), but the -1E3/TR variant is specified at ±5%.
Is 1N4698UR-1E3/TR RoHS compliant?
Yes, the "E3" suffix in 1N4698UR-1E3/TR explicitly denotes RoHS compliance with matte-tin plating, as defined in the Part Nomenclature section on page 2 of the datasheet. This applies only to the commercial-grade version, which matches the ordering part number provided.
What is the maximum reverse leakage current for 1N4698UR-1E3/TR?
The maximum reverse leakage current (IR) for 1N4698UR-1E3/TR is 0.05 µA at VR = 8.4 V, per the Electrical Characteristics table on page 3. This ultra-low leakage supports high-impedance bias networks and precision reference designs where leakage-induced errors must be minimized.
Does 1N4698UR-1E3/TR require special ESD handling?
No, the 1N4698UR-1E3/TR is non-sensitive to ESD per MIL-STD-750 Method 1020, as stated in the Applications/Benefits section on page 1. Standard handling procedures are sufficient-no special ESD controls are required during assembly or testing.
What is the thermal resistance junction-to-end cap for 1N4698UR-1E3/TR?
The thermal resistance junction-to-end cap (RθJL) for 1N4698UR-1E3/TR is 100 °C/W when mounted on an FR4 PCB with 1 oz copper and the recommended footprint, as specified in the Maximum Ratings table on page 1. This value enables accurate thermal derating up to 175 °C junction temperature.
1N4698UR-1E3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 11 V
- Tolerance:
- ±5%
- Power - Max:
- 500 mW
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- 50 nA @ 8.4 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 100 mA
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
1N4698UR-1E3/TR FAQ
1.How can I place an order for 1N4698UR-1E3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4698UR-1E3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4698UR-1E3/TR reliable?
The price and inventory of 1N4698UR-1E3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4698UR-1E3/TR is usually 5 days.
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5.How can I obtain technical support or documentation for 1N4698UR-1E3/TR?
For technical support, including 1N4698UR-1E3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4698UR-1E3/TR requirements.
6.How does Aetrix verify that 1N4698UR-1E3/TR is sourced from the original manufacturer or authorized distributors?
All 1N4698UR-1E3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4698UR-1E3/TR meets industry standards.
7.What is the process for return or replacement of 1N4698UR-1E3/TR?
All 1N4698UR-1E3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4698UR-1E3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4698UR-1E3/TR part is unused and in its original packaging.
Return procedure for 1N4698UR-1E3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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