onsemi 1N4701RL

Overview

1N4701RL from ON Semiconductor is a 500 mW, 14 V ±5% Zener voltage regulator diode in a DO-35 (DO-204AH) hermetically sealed glass package, rated for –65°C to +200°C operation, with 10.6 mA maximum zener current and 0.05 µA reverse leakage at 11.2 V, used for precision low-power voltage reference and overvoltage protection in analog sensor interfaces and power supply feedback loops.

For engineers reviewing the 1N4701RL datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal derating behavior, polarity identification, ESD robustness (Class 3, >16 kV HBM), and real-world design implications of its double-slug metallurgical construction and oxide-passivated junction.

Technical Context

The 1N4701RL employs a silicon-oxide passivated Zener junction optimized for stable regulation at low test currents (IZT = 10.6 mA), with sharp breakdown characteristics and minimal dynamic impedance (ZZ ≈ 20 Ω typical at IZT). Its thermal design relies on lead-to-ambient conduction via 3/8″ leads, with steady-state power derating starting at 75°C (4.0 mW/°C).

It exhibits a positive temperature coefficient (~+2.5 mV/°C near 14 V), requiring thermal compensation in high-stability references. Leakage current remains ≤0.05 µA up to 80% of nominal VZ (11.2 V), supporting ultra-low-power standby circuits where quiescent current must be minimized.

Key Specifications

Pinout & Package

Package: DO-35 (JEDEC DO-204AH), axial-lead, hermetically sealed glass case with double-slug metallurgical construction; cathode identified by a single black polarity band near one lead end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with 1N4701A and BZX55C14, the 1N4701RL delivers superior thermal endurance, lower leakage, and tighter regulation consistency-making it the preferred choice for mission-critical analog references where hermetic reliability and microamp-level standby current matter.

Availability

1N4701RL is available at Aetrix Electronics and suitable for industrial power supplies, automotive sensor interfaces, low-power IoT protection circuits, and test equipment voltage clamping requiring stable component supply and long-term parametric consistency.

Supply support for 1N4701RL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, analog, and sensor solutions for automotive, industrial, and cloud infrastructure markets.

The 1N4678 Series-including 1N4701RL-is designed specifically for high-reliability, low-leakage Zener regulation in thermally demanding and environmentally harsh applications where hermetic sealing and oxide-passivated junctions are essential.

FAQ

What is the Zener voltage tolerance of the 1N4701RL?

The 1N4701RL has a nominal Zener voltage of 14 V with a standard tolerance of ±5%, meaning its actual VZ falls between 13.3 V and 14.7 V when measured at IZT = 10.6 mA and TL = 30°C. This tolerance is guaranteed per JEDEC specification and applies across the full operating temperature range, making the 1N4701RL suitable for designs requiring predictable clamping without post-manufacture sorting.

How does the 1N4701RL handle thermal stress in high-temperature environments?

The 1N4701RL is rated for operation from –65°C to +200°C and features a double-slug glass package that enhances thermal conduction from junction to leads. Its power dissipation derates linearly at 4.0 mW/°C above 75°C, and thermal resistance θJL is approximately 100°C/W-enabling reliable function in engine bay or industrial motor drive applications when mounted with 3/8″ lead length to heatsinks or PCB copper planes.

Can the 1N4701RL be used as a substitute for the 1N4701A in existing designs?

The 1N4701RL and 1N4701A share identical electrical specifications (VZ, IZT, PD, tolerance), but differ mechanically: the 1N4701RL uses a hermetically sealed DO-35 glass package, while the 1N4701A uses a DO-41 plastic package. Substitution is electrically valid but requires validation of environmental robustness-especially in humid, corrosive, or high-reliability contexts where the 1N4701RL's glass seal provides critical long-term stability.

What is the reverse leakage current specification for the 1N4701RL?

The 1N4701RL guarantees reverse leakage current (IR) ≤0.05 µA when tested at VR = 11.2 V (80% of nominal VZ = 14 V), measured at TA = 25°C. This ultra-low leakage supports micropower applications such as battery-backed memory supervisors or always-on sensor biasing, where even nanoamp-level currents impact system lifetime.

Does the 1N4701RL have ESD protection built-in?

Yes-the 1N4701RL is rated Class 3 per Human Body Model (HBM) with ESD withstand capability exceeding 16 kV. This intrinsic robustness stems from its oxide-passivated junction structure and eliminates the need for external TVS diodes in many front-end protection schemes, simplifying layout and reducing BOM count in industrial I/O and automotive body electronics.