Nexperia USA Inc. 1N4749A,113

Overview

1N4749A,113 from Nexperia is a 24 V ±5 % Zener voltage regulator diode in a hermetically sealed SOD66 (DO-41) glass package, rated for 1000 mW total power dissipation and 18.2 mA working current at 24 V, used for low-voltage stabilization in linear power supplies and reference circuits.

For engineers reviewing the 1N4749A,113 datasheet, 1N4749A,113 pinout, 1N4749A,113 application, or 1N4749A,113 equivalent, this page delivers verified Zener parameters, cathode/anode terminal mapping, thermal resistance (110 K/W), reverse current limit (190 µA at 19.2 V), and direct substitution guidance against industry-standard alternatives.

Technical Context

This device operates as a two-terminal silicon Zener diode with sharp reverse breakdown at nominal 24 V under 10.5 mA test current, exhibiting 25 Ω differential resistance and 750 µA maximum reverse leakage at 19.2 V. Its junction-to-tie-point thermal resistance is 110 K/W with 4 mm lead length.

Designed for DC voltage regulation and reference generation, it maintains stable output under varying load and temperature conditions (−65 °C to +200 °C operating range), with forward voltage ≤1.2 V at 200 mA and non-repetitive peak reverse current up to 190 mA.

Key Specifications

Pinout & Package

Hermetically sealed axial-leaded SOD66 (DO-41) glass package with 2 leads; cathode identified by a colored band on the body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with 1N4749A,113, the 1N4749A-T offers identical performance in automated assembly formats, while BZX85C24 provides higher power headroom at the cost of increased thermal resistance and physical size-critical for transient-heavy versus steady-state regulation roles.

Availability

1N4749A,113 is available at Aetrix Electronics and suitable for industrial power supply references, automotive ECU voltage clamps, medical sensor biasing, and telecom line card references requiring stable component supply and long-term parametric consistency.

Supply support for 1N4749A,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in Zener diodes, MOSFETs, and ESD protection.

The 1N47xxA series was developed specifically for cost-effective, stable DC voltage regulation in consumer, industrial, and automotive power systems-emphasizing hermetic reliability and tight V_Z tolerance in axial packages.

FAQ

What is the maximum continuous reverse voltage that 1N4749A,113 can regulate without degradation?

The 1N4749A,113 is rated for nominal 24 V Zener voltage with ±5 % tolerance, meaning it regulates stably between 22.8 V and 25.2 V. Its absolute maximum reverse voltage is not defined separately-the device operates within its specified V_Z range under recommended test current (10.5 mA) and power limits (1000 mW). Exceeding 25.2 V continuously risks thermal runaway if power dissipation exceeds ratings.

How does the 113 suffix affect packaging and compatibility with 1N4749A variants?

The ",113" suffix denotes Nexperia's bulk packaging variant in ammopack format, containing 1000 units per pack. It shares identical electrical characteristics, SOD66 (DO-41) mechanical outline, and thermal performance with other 1N4749A versions (e.g., ,T for tape-and-reel). No design or layout changes are needed when substituting across suffixes.

Can 1N4749A,113 be used in parallel for higher current capability?

No-Zener diodes must not be paralleled due to mismatched V_Z tolerances and thermal coefficients, causing current hogging and potential failure. For higher current regulation, use a single higher-power Zener (e.g., BZX85C24) or implement an active shunt regulator with a transistor and reference diode.

What is the significance of the 110 K/W thermal resistance value in system design?

The 110 K/W junction-to-tie-point thermal resistance (R_th(j-t)) means each watt dissipated raises the junction temperature 110 °C above the lead tie-point temperature. At full 1000 mW dissipation and 50 °C ambient, junction temperature reaches ~160 °C-well within the +200 °C max rating but requiring adequate PCB copper area or heatsinking to avoid derating in enclosed environments.