Microchip Technology 1N4755APE3/TR12

Overview

1N4755APE3/TR12 from Microsemi is a 1.0 W, 43 V ±5% axial-lead silicon Zener diode in DO-41 (DO-204AL) plastic package, designed for precision voltage regulation in power supply feedback loops, overvoltage protection circuits, and reference voltage generation at up to 110 mA DC current.

For engineers reviewing the 1N4755APE3/TR12 datasheet, 1N4755APE3/TR12 pinout, 1N4755APE3/TR12 application, or 1N4755APE3/TR12 equivalent, key selection factors include its 43 V nominal Zener voltage, 6.0 mA test current, 70 Ω dynamic impedance at I_ZT, 22 μA maximum reverse leakage at 32.7 V, and RoHS-compliant matte-tin plating with tape-and-reel packaging (TR12).

Technical Context

This device operates in reverse breakdown mode with a sharp knee at 6.0 mA test current (I_ZT) and maintains regulation across a wide current range (0.25–110 mA), supported by low thermal resistance (45 °C/W junction-to-lead at 10 mm lead length). Its Zener voltage exhibits a positive temperature coefficient above ~5 V, confirmed at +12 mV/°C for 43 V devices per Figure 3.

The 1N4755APE3/TR12 is rated for -65 °C to +150 °C operation, features UL94V-0 void-free epoxy encapsulation, and meets MIL-STD-750 Method 1020 for ESD insensitivity. It delivers stable regulation under steady-state (1.0 W at T_L < 105 °C) and transient surge conditions (1500 mA half-sine pulse).

Key Specifications

Pinout & Package

DO-41 (DO-204AL) plastic axial-leaded package: cylindrical body with cathode band marking; leads tinned (Sn/Pb or RoHS matte-tin); weight 0.7 g; moisture sensitivity level 1 (no dry pack required).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with 1N4755A and MMBZ5265BS-7-F, the 1N4755APE3/TR12 uniquely combines full 1.0 W power handling, RoHS compliance, and automated tape-and-reel compatibility in the industry-standard DO-41 package-making it optimal for high-reliability, medium-power, and production-scale designs requiring regulatory and assembly flexibility.

Availability

1N4755APE3/TR12 is available at Aetrix Electronics and suitable for switching power supplies, overvoltage protection circuits, and programmable reference sources requiring stable component supply, long-term lifecycle support, and RoHS-compliant procurement.

Supply support for 1N4755APE3/TR12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, and industrial markets.

The 1N47xxAP Zener series was developed to deliver JEDEC-standardized, high-stability voltage regulation in ruggedized plastic packages for mission-critical power management and protection functions.

FAQ

What is the Zener voltage tolerance for 1N4755APE3/TR12?

The 1N4755APE3/TR12 has a nominal Zener voltage of 43 V with a ±5% tolerance, as indicated by the "A" suffix per Microsemi's documentation. This means the actual measured V_Z falls between 40.85 V and 45.15 V at 6.0 mA test current and 25 °C lead temperature. The tolerance is guaranteed across the full operating temperature range (-65 °C to +150 °C) and applies to every unit shipped.

Does 1N4755APE3/TR12 require dry packing before reflow soldering?

No, the 1N4755APE3/TR12 does not require dry packing. It is rated Moisture Sensitivity Level 1 per IPC/JEDEC J-STD-020B, meaning it can be stored indefinitely at ≤30 °C/60% RH without baking. This eliminates pre-reflow baking steps and reduces handling risk during PCB assembly-confirmed in Microsemi's datasheet revision C (2005).

What is the maximum continuous Zener current for 1N4755APE3/TR12 at 50 °C ambient?

The maximum continuous Zener current (I_ZM) for 1N4755APE3/TR12 is 110 mA at 50 °C ambient temperature, as specified in the Electrical Characteristics table. This value assumes proper PCB thermal design (e.g., FR4 with 1 oz Cu, 4 mm² copper pads) and accounts for power derating above 25 °C. Exceeding this current risks thermal instability or parametric shift.

Is 1N4755APE3/TR12 compatible with lead-free reflow profiles?

Yes, the 1N4755APE3/TR12 features RoHS-compliant annealed matte-tin plating and is qualified for lead-free reflow soldering at 260 °C for 10 seconds maximum, per MIL-STD-750 Method 2026. Its UL94V-0 epoxy body withstands standard JEDEC J-STD-020 profiles, including peak temperatures up to 260 °C, making it suitable for Pb-free assembly lines.

How does the dynamic impedance of 1N4755APE3/TR12 affect voltage regulation accuracy?

The dynamic impedance (Z_ZT) of 1N4755APE3/TR12 is 70 Ω at 6.0 mA test current. This value directly determines how much the output voltage shifts with load current changes: ΔV = Z_ZT × ΔI. For example, a 10 mA load variation causes ~0.7 V deviation-critical for high-precision references. Lower Z_ZT improves regulation stability, and 70 Ω reflects optimized performance for 43 V Zeners in the 1N47xxAP family.