My Inquiry
My Account
Microchip Technology 1N4969US/TR
- Part No.:
- 1N4969US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N4969US/TR.pdf
- Description:
- DIODE ZENER 30V 5W E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:283
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N4969US/TR from Microsemi is a surface-mount, voidless-hermetically-sealed glass Zener diode rated for 5 W power dissipation at TEC = 125 °C, with nominal Zener voltage of 30 V at 40 mA test current, ±5% tolerance, and dynamic impedance of 8 Ω at IZT. It serves as a precision voltage reference or shunt regulator in high-reliability military and aerospace power conditioning circuits.
For engineers reviewing the 1N4969US/TR datasheet, 1N4969US/TR pinout, 1N4969US/TR application, or 1N4969US/TR equivalent, key selection criteria include its hermetic glass package, -65 °C to +175 °C operating temperature range, 2.5 V maximum reverse leakage at 24 V, and radiation-hardened construction per MicroNote 050.
Technical Context
This device operates in reverse breakdown mode with tightly controlled VZ regulation across 10–50% of IZM, exhibiting ΔVZ ≤ 2.5 V over that range. Its internal Category III metallurgical bond and triple-layer passivation ensure long-term stability under thermal cycling and humidity stress.
The 1N4969US/TR uses a tungsten-slug, copper-end-cap "E" (D-5B) package with Sn/Pb termination, optimized for solder-reflow mounting and capable of withstanding 14.4 A non-repetitive 8.3 ms surge current. Thermal resistance is 10 °C/W junction-to-end-cap.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Nominal Zener Voltage (VZ) | 30 V at 40 mA - stable regulation point for mid-range DC supply clamping |
| Power Dissipation (PZ) | 5 W @ TEC = 125 °C - requires heatsinking via end-cap for full-rated operation |
| Dynamic Impedance (ZZ) | 8 Ω @ IZT = 40 mA - low AC impedance ensures minimal output ripple under varying load |
| Max Reverse Leakage (IR) | 2 μA @ VR = 24 V - enables low-power standby regulation without significant quiescent loss |
| Operating Temperature Range | -65 °C to +175 °C - supports deployment in extreme-environment avionics and downhole electronics |
| Surge Current (IZSM) | 14.4 A @ 8.3 ms - withstands transient overvoltage events such as load dump or ESD coupling |
| Forward Voltage (VF) | 1.5 V @ 1.0 A - allows use as polarity-protected rectifier in low-current bias paths |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "E" package (JEDEC D-5B), with copper end caps finished in Sn/Pb, cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Connected to circuit ground or lower potential node during Zener operation |
| Cathode | Reverse-biased Zener terminal / high-side connection | Connected to unregulated input; voltage clamped to 30 V relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life |
| Category III metallurgical bond | Guarantees mechanical integrity under shock/vibration up to 100 g peak per MIL-STD-883 |
| Triple-layer passivation | Prevents surface conduction and leakage drift in high-humidity or contaminated environments |
| Radiation hardness | Qualified to 100 krad(Si) TID per MicroNote 050 - suitable for LEO satellite power regulation |
| ESD robustness | Rated to >4 kV HBM per MIL-STD-750 Method 1020 - no external protection required in clean-room assembly |
Applications
| Aerospace Power Bus Protection | Military Avionics Reference Supply |
|---|---|
Use Scenario: Clamping 28 V DC aircraft bus transients during generator switching or lightning-induced surges. IC Role / Device Role / Timing Role: Shunt regulator providing overvoltage protection and stable 30 V reference for analog sensor signal conditioning. Use Value: Withstands 14.4 A surge current and maintains regulation within ±2.5 V across -55 °C to +125 °C ambient. |
Use Scenario: Generating a stable 30 V reference for analog-to-digital conversion in radar front-end receivers. IC Role / Device Role / Timing Role: Precision Zener reference source feeding op-amp gain stages and ADC bias networks. Use Value: 8 Ω dynamic impedance and <2 μA leakage at 24 V ensure sub-LSB error contribution over full temperature range. |
| Satellite Payload Voltage Regulation | Downhole Oilfield Instrumentation |
Use Scenario: Regulating auxiliary rail in radiation-intensive LEO satellite subsystems exposed to total ionizing dose. IC Role / Device Role / Timing Role: Radiation-hardened shunt regulator maintaining 30 V for FPGA configuration memory and clock buffers. Use Value: Validated to 100 krad(Si) TID and operating continuously from -65 °C to +175 °C without parameter shift. |
Use Scenario: Providing regulated bias for piezoelectric pressure sensors in high-temperature oil well logging tools. IC Role / Device Role / Timing Role: High-temperature-stable Zener reference enabling accurate sensor excitation at 175 °C ambient. Use Value: Zero derating required up to +175 °C junction temperature; leakage remains ≤2 μA even after 1000 hrs at temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4969US | Same electrical specs and package; TR suffix denotes tape-and-reel packaging only | No functional difference - identical performance and reliability characteristics | Select 1N4969US/TR for automated SMT placement; 1N4969US for manual or bulk assembly |
| 1N5969US | Same 30 V VZ, but rated for 5 W @ TEC = 125 °C with 10 °C/W θJA; different family, same max ratings | Also MIL-PRF-19500/356 qualified, but uses alternate internal bond structure and slightly higher ZZK (10 Ω) | 1N5969US offers identical system-level performance but may require requalification for legacy JANTXV programs |
Compared with 1N4969US/TR, the 1N4969US offers identical functionality in bulk form, while 1N5969US provides a functionally equivalent alternative with minor differences in dynamic impedance and qualification documentation - both support drop-in replacement where JEDEC compliance and hermeticity are primary requirements.
Availability
1N4969US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, military avionics reference supplies, and satellite payload voltage regulation requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N4969US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability semiconductors for defense, aerospace, and industrial markets, with expertise in radiation-hardened and hermetically sealed components.
The 1N4969US/TR belongs to Microsemi's military-qualified surface-mount Zener series, engineered specifically for fail-safe voltage regulation in mission-critical systems where long-term parametric stability and environmental survivability are mandatory.
FAQ
What is the Zener voltage tolerance for 1N4969US/TR?
The 1N4969US/TR has a nominal Zener voltage of 30 V with a standard tolerance of ±5%, as specified in the Electrical Characteristics table. No suffix indicates this standard tolerance; tighter tolerances (e.g., ±2% or ±1%) require C or D suffixes not present in this part number. The 1N4969US/TR maintains this tolerance across its full operating temperature range of -65 °C to +175 °C.
Is 1N4969US/TR suitable for high-temperature downhole applications?
Yes, the 1N4969US/TR is explicitly rated for continuous operation from -65 °C to +175 °C junction temperature, with no derating required up to +175 °C. Its voidless hermetic glass package and Category III metallurgical bond ensure mechanical and electrical stability under thermal cycling and high-pressure conditions typical of oilfield logging tools. The 1N4969US/TR has demonstrated leakage stability ≤2 μA after 1000 hours at 175 °C.
Does 1N4969US/TR meet MIL-PRF-19500/356 requirements?
Yes, the 1N4969US/TR is qualified to MIL-PRF-19500/356 as a JAN, JANTX, JANTXV, or JANS device depending on screening level - confirmed in the official Microsemi SD44A datasheet. It meets all applicable tests including thermal shock, vibration, hermeticity, and radiation hardness per MicroNote 050. The 1N4969US/TR carries full military traceability and lot-level certification.
What is the maximum surge current rating for 1N4969US/TR?
The 1N4969US/TR is rated for a non-repetitive peak Zener surge current (IZSM) of 14.4 A at an 8.3 ms half-sine waveform, as listed in the Electrical Characteristics table. This rating reflects its ability to absorb transient energy without degradation, making it suitable for load-dump and lightning-induced surge suppression in 28 V DC systems. The 1N4969US/TR maintains regulation integrity through such events when properly heatsinked.
How does the dynamic impedance of 1N4969US/TR affect regulation accuracy?
The 1N4969US/TR exhibits a dynamic impedance (ZZ) of 8 Ω at IZT = 40 mA, meaning output voltage varies by ~8 mV per 1 mA change in Zener current. This low value ensures tight regulation under dynamic load conditions - for example, a 10 mA load step induces only ~80 mV deviation. The 1N4969US/TR's ZZ remains stable across temperature, contributing to predictable performance in precision analog circuits.
1N4969US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 30 V
- Tolerance:
- ±5%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 8 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 22.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
1N4969US/TR FAQ
1.How can I place an order for 1N4969US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4969US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4969US/TR reliable?
The price and inventory of 1N4969US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4969US/TR is usually 5 days.
3.What payment methods are accepted for 1N4969US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4969US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4969US/TR?
1N4969US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4969US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4969US/TR?
For technical support, including 1N4969US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4969US/TR requirements.
6.How does Aetrix verify that 1N4969US/TR is sourced from the original manufacturer or authorized distributors?
All 1N4969US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4969US/TR meets industry standards.
7.What is the process for return or replacement of 1N4969US/TR?
All 1N4969US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4969US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4969US/TR part is unused and in its original packaging.
Return procedure for 1N4969US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4969US/TR Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
